Page 1375 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFC3306EB
Infineon Technologies

MOSFET N-CH 60V DIE ON WAFER

Package: -

Stock7,728
IPB05N03LA G
Infineon Technologies

MOSFET N-CH 25V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,384
SPB21N10
Infineon Technologies

MOSFET N-CH 100V 21A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock780,000
SUD50N03-16P-E3
Vishay Siliconix

MOSFET N-CH 30V TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,784
AON7400
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 20A 8-DFN

Package: 8-PowerSMD, Flat Leads

Stock4,848
FQPF6N40CT
Fairchild/ON Semiconductor

MOSFET N-CH 400V 6A TO-220F

Package: TO-220-3 Full Pack

Stock24,000
IRFS9N60ATRL
Vishay Siliconix

MOSFET N-CH 600V 9.2A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,720
IRFR9310TR
Vishay Siliconix

MOSFET P-CH 400V 1.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock121,788
IRF3205STRRPBF
Infineon Technologies

MOSFET N-CH 55V 110A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock10,728
IXTZ550N055T2
IXYS

MOSFET N-CH 55V 550A DE475

Package: DE475

Stock3,120
MKE11R600DCGFC
IXYS

MOSFET N-CH 600V 15A I4-PAC

Package: i4-Pac?-5

Stock4,048
IXFK88N20Q
IXYS

MOSFET N-CH 200V 88A TO-264

Package: TO-264-3, TO-264AA

Stock7,280
TPH12008NH,L1Q
Toshiba Semiconductor and Storage

MOSFET N CH 80V 24A SOP

Package: 8-PowerVDFN

Stock6,416
DMP210DUFB4-7B
Diodes Incorporated

MOSFET P-CH 20V 0.2A X2-DFN1006

Package: 3-XFDFN

Stock232,752
TSM1NB60SCT A3G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock3,008
AOB27S60L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 27A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,704
SSM3J114TU(TE85L)
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 1.8A UFM

Package: 3-SMD, Flat Leads

Stock2,912
IRF6810STRPBF
Infineon Technologies

MOSFET N CH 25V 16A S1

Package: DirectFET? Isometric S1

Stock49,572
SI8499DB-T2-E1
Vishay Siliconix

MOSFET P-CH 20V 16A MICROFOOT

Package: 6-MICRO FOOT?

Stock4,453,260
BSS316NH6327XTSA1
Infineon Technologies

MOSFET N-CH 30V 1.4A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock298,170

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFC3306EB	Infineon Technologies	MOSFET N-CH 60V DIE ON WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,728	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB05N03LA G	Infineon Technologies	MOSFET N-CH 25V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,384	MOSFET (Metal Oxide)	25V	80A (Tc)	4.5V, 10V	2V @ 50µA	25nC @ 5V	3110pF @ 15V	±20V	-	94W (Tc)	4.6 mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPB21N10	Infineon Technologies	MOSFET N-CH 100V 21A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 44µA Gate Charge (Qg) (Max) @ Vgs: 38.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock780,000	MOSFET (Metal Oxide)	100V	21A (Tc)	10V	4V @ 44µA	38.4nC @ 10V	865pF @ 25V	±20V	-	90W (Tc)	80 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUD50N03-16P-E3	Vishay Siliconix	MOSFET N-CH 30V TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.5W (Ta), 40.8W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,784	MOSFET (Metal Oxide)	30V	-	4.5V, 10V	3V @ 250µA	13nC @ 4.5V	1150pF @ 25V	±20V	-	6.5W (Ta), 40.8W (Tc)	16 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
AON7400	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 20A 8-DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1452pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3x3) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock4,848	MOSFET (Metal Oxide)	30V	10A (Ta), 26A (Tc)	4.5V, 10V	2.5V @ 250µA	28nC @ 10V	1452pF @ 15V	±12V	-	3.1W (Ta), 35W (Tc)	12.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (3x3)	8-PowerSMD, Flat Leads
FQPF6N40CT	Fairchild/ON Semiconductor	MOSFET N-CH 400V 6A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock24,000	MOSFET (Metal Oxide)	400V	6A (Tc)	10V	4V @ 250µA	20nC @ 10V	625pF @ 25V	±30V	-	38W (Tc)	1 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IRFS9N60ATRL	Vishay Siliconix	MOSFET N-CH 600V 9.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,720	MOSFET (Metal Oxide)	600V	9.2A (Tc)	10V	4V @ 250µA	49nC @ 10V	1400pF @ 25V	±30V	-	170W (Tc)	750 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFR9310TR	Vishay Siliconix	MOSFET P-CH 400V 1.8A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 7 Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock121,788	MOSFET (Metal Oxide)	400V	1.8A (Tc)	10V	4V @ 250µA	13nC @ 10V	270pF @ 25V	±20V	-	50W (Tc)	7 Ohm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF3205STRRPBF	Infineon Technologies	MOSFET N-CH 55V 110A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3247pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock10,728	MOSFET (Metal Oxide)	55V	110A (Tc)	10V	4V @ 250µA	146nC @ 10V	3247pF @ 25V	±20V	-	200W (Tc)	8 mOhm @ 62A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTZ550N055T2	IXYS	MOSFET N-CH 55V 550A DE475 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 550A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 595nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 1 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DE475 Package / Case: DE475	Package: DE475	Stock3,120	MOSFET (Metal Oxide)	55V	550A (Tc)	10V	4V @ 250µA	595nC @ 10V	40000pF @ 25V	±20V	-	600W (Tc)	1 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DE475	DE475
MKE11R600DCGFC	IXYS	MOSFET N-CH 600V 15A I4-PAC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC? Package / Case: i4-Pac?-5	Package: i4-Pac?-5	Stock4,048	MOSFET (Metal Oxide)	600V	15A (Tc)	10V	3.5V @ 790µA	52nC @ 10V	2000pF @ 100V	±20V	-	-	165 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS i4-PAC?	i4-Pac?-5
IXFK88N20Q	IXYS	MOSFET N-CH 200V 88A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,280	MOSFET (Metal Oxide)	200V	88A (Tc)	10V	4V @ 4mA	146nC @ 10V	4150pF @ 25V	±30V	-	500W (Tc)	30 mOhm @ 44A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
TPH12008NH,L1Q	Toshiba Semiconductor and Storage	MOSFET N CH 80V 24A SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 12A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,416	MOSFET (Metal Oxide)	80V	24A (Tc)	10V	4V @ 300µA	22nC @ 10V	1900pF @ 40V	±20V	-	1.6W (Ta), 48W (Tc)	12.3 mOhm @ 12A, 10V	150°C (TJ)	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
DMP210DUFB4-7B	Diodes Incorporated	MOSFET P-CH 20V 0.2A X2-DFN1006 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 15V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN1006-3 Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock232,752	MOSFET (Metal Oxide)	20V	200mA (Ta)	1.2V, 4.5V	1V @ 250µA	-	175pF @ 15V	±10V	-	350mW (Ta)	5 Ohm @ 100mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN1006-3	3-XFDFN
TSM1NB60SCT A3G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, PLANA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 10 Ohm @ 250mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock3,008	MOSFET (Metal Oxide)	600V	500mA (Tc)	10V	4.5V @ 250µA	6.1nC @ 10V	138pF @ 25V	±30V	-	2.5W (Tc)	10 Ohm @ 250mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
AOB27S60L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 27A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1294pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,704	MOSFET (Metal Oxide)	600V	27A (Tc)	10V	4V @ 250µA	26nC @ 10V	1294pF @ 100V	±30V	-	357W (Tc)	160 mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SSM3J114TU(TE85L)	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 1.8A UFM FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 331pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 149 mOhm @ 600mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock2,912	MOSFET (Metal Oxide)	20V	1.8A (Ta)	1.5V, 4V	1V @ 1mA	7.7nC @ 4V	331pF @ 10V	±8V	-	500mW (Ta)	149 mOhm @ 600mA, 4V	150°C (TJ)	Surface Mount	UFM	3-SMD, Flat Leads
IRF6810STRPBF	Infineon Technologies	MOSFET N CH 25V 16A S1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1038pF @ 13V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 16A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET S1 Package / Case: DirectFET? Isometric S1	Package: DirectFET? Isometric S1	Stock49,572	MOSFET (Metal Oxide)	25V	16A (Ta), 50A (Tc)	4.5V, 10V	2.1V @ 25µA	11nC @ 4.5V	1038pF @ 13V	±16V	-	2.1W (Ta), 20W (Tc)	5.2 mOhm @ 16A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET S1	DirectFET? Isometric S1
SI8499DB-T2-E1	Vishay Siliconix	MOSFET P-CH 20V 16A MICROFOOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.77W (Ta), 13W (Tc) Rds On (Max) @ Id, Vgs: 32 mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-Micro Foot? Package / Case: 6-MICRO FOOT?	Package: 6-MICRO FOOT?	Stock4,453,260	MOSFET (Metal Oxide)	20V	16A (Tc)	1.8V, 4.5V	1.3V @ 250µA	30nC @ 5V	1300pF @ 10V	±12V	-	2.77W (Ta), 13W (Tc)	32 mOhm @ 1.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-Micro Foot?	6-MICRO FOOT?
BSS316NH6327XTSA1	Infineon Technologies	MOSFET N-CH 30V 1.4A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock298,170	MOSFET (Metal Oxide)	30V	1.4A (Ta)	4.5V, 10V	2V @ 3.7µA	0.6nC @ 5V	94pF @ 15V	±20V	-	500mW (Ta)	160 mOhm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
PSMN4R0-30YLDX	Nexperia USA Inc.	MOSFET N-CH 30V 95A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1272pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 64W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock151,032	MOSFET (Metal Oxide)	30V	95A (Tc)	4.5V, 10V	2.2V @ 1mA	19.4nC @ 10V	1272pF @ 15V	±20V	-	64W (Tc)	4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
IXFA72N30X3	IXYS	MOSFET N-CH 300V 72A TO263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA (IXFA) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock57	MOSFET (Metal Oxide)	300 V	72A (Tc)	10V	4.5V @ 1.5mA	82 nC @ 10 V	5400 pF @ 25 V	±20V	-	390W (Tc)	19mOhm @ 36A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA (IXFA)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB035N12NM6ATMA1	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCU50P06YHE3-TP	Micro Commercial Co	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 89W (Tj) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	50A (Tc)	4.5V, 10V	3V @ 250µA	79 nC @ 10 V	4600 pF @ 25 V	±20V	-	89W (Tj)	12mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPT60T022S7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDB42AN15A0-F085	onsemi	MOSFET N-CH 150V 35A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	35A (Tc)	10V	4V @ 250µA	36 nC @ 10 V	2040 pF @ 25 V	±20V	-	150W (Tc)	42mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
2N7002-13-F-79	Diodes Incorporated	DIODE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	170mA (Ta)	5V, 10V	2.5V @ 250µA	0.23 nC @ 4.5 V	50 pF @ 25 V	±20V	-	370mW (Ta)	5Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
CSD16342Q5AT	Texas Instruments	PROTOTYPE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 12.5 V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	25 V	21A (Ta), 100A (Tc)	2.5V, 8V	1.1V @ 250µA	7.1 nC @ 4.5 V	1350 pF @ 12.5 V	+10V, -8V	-	3W (Ta)	4.7mOhm @ 20A, 8V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN