Page 1374 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF6633ATRPBF
Infineon Technologies

MOSFET N-CH 20V 16A DIRECTFET-MU

Package: DirectFET? Isometric MU

Stock15,756
IRL3715
Infineon Technologies

MOSFET N-CH 20V 54A TO-220AB

Package: TO-220-3

Stock16,512
AO5404EL
Alpha & Omega Semiconductor Inc.

MOSFET N-CH SC89-3

Package: SC-89, SOT-490

Stock517,524
SI1037X-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 0.77A SC89

Package: SOT-563, SOT-666

Stock7,808
NTMFS4837NT1G
ON Semiconductor

MOSFET N-CH 30V 10A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock28,908
APT7F80K
Microsemi Corporation

MOSFET N-CH 800V 7A TO-220

Package: TO-220-3

Stock5,120
FQPF1N60T
Fairchild/ON Semiconductor

MOSFET N-CH 600V 0.9A TO-220F

Package: TO-220-3 Full Pack

Stock3,296
IPB65R190C6ATMA1
Infineon Technologies

MOSFET N-CH 650V 20.2A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,104
IPD60R750E6ATMA1
Infineon Technologies

MOSFET N-CH 600V 5.7A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,232
IPD90N06S4L06ATMA2
Infineon Technologies

MOSFET N-CH 60V 90A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,312
IRF8721GTRPBF
Infineon Technologies

MOSFET N-CH 30V 14A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,520
MMIX1F230N20T
IXYS

MOSFET N-CH 200V 168A SMPD

Package: 24-PowerSMD, 21 Leads

Stock5,392
EKI06051
Sanken

MOSFET N-CH 60V 85A TO-220

Package: TO-220-3

Stock7,728
AOT462L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 7A TO220

Package: TO-220-3

Stock24,300
RSS065N03FU6TB
Rohm Semiconductor

MOSFET N-CH 30V 6.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock30,000
TPN5R203PL-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 38A 8TSON

Package: -

Stock65,127
SPA07N60C2
Infineon Technologies

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
TPH4R10ANL-L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 92A/70A 8SOP

Package: -

Stock18,663
SQ4435EY-T1_BE3
Vishay Siliconix

MOSFET P-CHANNEL 30V 15A 8SOIC

Package: -

Stock7,500
SQ7415AENW-T1_GE3
Vishay Siliconix

MOSFET P-CH 60V 16A PPAK1212-8

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF6633ATRPBF	Infineon Technologies	MOSFET N-CH 20V 16A DIRECTFET-MU FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 16A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MU Package / Case: DirectFET? Isometric MU	Package: DirectFET? Isometric MU	Stock15,756	MOSFET (Metal Oxide)	20V	16A (Ta), 69A (Tc)	4.5V, 10V	2.2V @ 250µA	17nC @ 4.5V	1410pF @ 10V	±20V	-	2.3W (Ta), 42W (Tc)	5.6 mOhm @ 16A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MU	DirectFET? Isometric MU
IRL3715	Infineon Technologies	MOSFET N-CH 20V 54A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock16,512	MOSFET (Metal Oxide)	20V	54A (Tc)	4.5V, 10V	3V @ 250µA	17nC @ 4.5V	1060pF @ 10V	±20V	-	3.8W (Ta), 71W (Tc)	14 mOhm @ 26A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
AO5404EL	Alpha & Omega Semiconductor Inc.	MOSFET N-CH SC89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 280mW (Ta) Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-3 Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock517,524	MOSFET (Metal Oxide)	20V	500mA (Ta)	1.8V, 4.5V	1V @ 250µA	1nC @ 4.5V	45pF @ 10V	±8V	-	280mW (Ta)	550 mOhm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-3	SC-89, SOT-490
SI1037X-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 0.77A SC89 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 770mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 170mW (Ta) Rds On (Max) @ Id, Vgs: 195 mOhm @ 770mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89 (SOT-563F) Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock7,808	MOSFET (Metal Oxide)	20V	770mA (Ta)	1.8V, 4.5V	450mV @ 250µA (Min)	5.5nC @ 4.5V	-	±8V	-	170mW (Ta)	195 mOhm @ 770mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-89 (SOT-563F)	SOT-563, SOT-666
NTMFS4837NT1G	ON Semiconductor	MOSFET N-CH 30V 10A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2048pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 880mW (Ta), 47.2W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock28,908	MOSFET (Metal Oxide)	30V	10A (Ta), 74A (Tc)	4.5V, 11.5V	2.5V @ 250µA	22nC @ 4.5V	2048pF @ 12V	±20V	-	880mW (Ta), 47.2W (Tc)	5 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
APT7F80K	Microsemi Corporation	MOSFET N-CH 800V 7A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1335pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 225W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 [K] Package / Case: TO-220-3	Package: TO-220-3	Stock5,120	MOSFET (Metal Oxide)	800V	7A (Tc)	10V	5V @ 500µA	43nC @ 10V	1335pF @ 25V	±30V	-	225W (Tc)	1.5 Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 [K]	TO-220-3
FQPF1N60T	Fairchild/ON Semiconductor	MOSFET N-CH 600V 0.9A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 900mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 21W (Tc) Rds On (Max) @ Id, Vgs: 11.5 Ohm @ 450mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,296	MOSFET (Metal Oxide)	600V	900mA (Tc)	10V	5V @ 250µA	6nC @ 10V	150pF @ 25V	±30V	-	21W (Tc)	11.5 Ohm @ 450mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IPB65R190C6ATMA1	Infineon Technologies	MOSFET N-CH 650V 20.2A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 730µA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,104	MOSFET (Metal Oxide)	650V	20.2A (Tc)	10V	3.5V @ 730µA	73nC @ 10V	1620pF @ 100V	±20V	-	151W (Tc)	190 mOhm @ 7.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPD60R750E6ATMA1	Infineon Technologies	MOSFET N-CH 600V 5.7A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 170µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 373pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,232	MOSFET (Metal Oxide)	600V	5.7A (Tc)	10V	3.5V @ 170µA	17.2nC @ 10V	373pF @ 100V	±20V	-	48W (Tc)	750 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD90N06S4L06ATMA2	Infineon Technologies	MOSFET N-CH 60V 90A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5680pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,312	MOSFET (Metal Oxide)	60V	90A (Tc)	4.5V, 10V	2.2V @ 40µA	75nC @ 10V	5680pF @ 25V	±16V	-	79W (Tc)	6.3 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF8721GTRPBF	Infineon Technologies	MOSFET N-CH 30V 14A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,520	MOSFET (Metal Oxide)	30V	14A (Ta)	4.5V, 10V	2.35V @ 25µA	12nC @ 4.5V	1040pF @ 15V	±20V	-	2.5W (Ta)	8.5 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
MMIX1F230N20T	IXYS	MOSFET N-CH 200V 168A SMPD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 168A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 378nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMPD Package / Case: 24-PowerSMD, 21 Leads	Package: 24-PowerSMD, 21 Leads	Stock5,392	MOSFET (Metal Oxide)	200V	168A (Tc)	10V	5V @ 8mA	378nC @ 10V	28000pF @ 25V	±20V	-	600W (Tc)	8.3 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SMPD	24-PowerSMD, 21 Leads
EKI06051	Sanken	MOSFET N-CH 60V 85A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 90.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6210pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 55A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock7,728	MOSFET (Metal Oxide)	60V	85A (Tc)	4.5V, 10V	2.5V @ 1.5mA	90.6nC @ 10V	6210pF @ 25V	±20V	-	135W (Tc)	4.7 mOhm @ 55A, 10V	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
AOT462L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 7A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock24,300	MOSFET (Metal Oxide)	60V	7A (Ta), 35A (Tc)	10V	4V @ 250µA	36nC @ 10V	2400pF @ 30V	±20V	-	2.1W (Ta), 100W (Tc)	18 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
RSS065N03FU6TB	Rohm Semiconductor	MOSFET N-CH 30V 6.5A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock30,000	MOSFET (Metal Oxide)	30V	6.5A (Ta)	4V, 10V	2.5V @ 1mA	6.1nC @ 5V	430pF @ 10V	±20V	-	2W (Ta)	26 mOhm @ 6.5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
TPN5R203PL-LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 38A 8TSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 610mW (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 19A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.1x3.1) Package / Case: 8-PowerVDFN	Package: -	Stock65,127	MOSFET (Metal Oxide)	30 V	38A (Tc)	4.5V, 10V	2.1V @ 200µA	22 nC @ 10 V	1975 pF @ 15 V	±20V	-	610mW (Ta), 61W (Tc)	5.2mOhm @ 19A, 10V	175°C	Surface Mount	8-TSON Advance (3.1x3.1)	8-PowerVDFN
SPA07N60C2	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-31 Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	5.5V @ 350µA	35 nC @ 10 V	970 pF @ 25 V	±20V	-	32W (Tc)	600mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-31	TO-220-3 Full Pack
TPH4R10ANL-L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 92A/70A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 92A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 67W (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: -	Stock18,663	MOSFET (Metal Oxide)	100 V	92A (Ta), 70A (Tc)	4.5V, 10V	2.5V @ 1mA	75 nC @ 10 V	6300 pF @ 50 V	±20V	-	2.5W (Ta), 67W (Tc)	4.1mOhm @ 35A, 10V	150°C	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
SQ4435EY-T1_BE3	Vishay Siliconix	MOSFET P-CHANNEL 30V 15A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.8W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock7,500	MOSFET (Metal Oxide)	30 V	15A (Tc)	4.5V, 10V	2.5V @ 250µA	58 nC @ 10 V	2170 pF @ 15 V	±20V	-	6.8W (Tc)	18mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SQ7415AENW-T1_GE3	Vishay Siliconix	MOSFET P-CH 60V 16A PPAK1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 53W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	16A (Tc)	4.5V, 10V	2.5V @ 250µA	38 nC @ 10 V	1385 pF @ 25 V	±20V	-	53W (Tc)	65mOhm @ 5.7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
IMBG65R020M2HXTMA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock1,500	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SISS63DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 35.1/127.5A PPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 35.1A (Ta), 127.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 5W (Ta), 65.8W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S	Package: -	Stock111,861	MOSFET (Metal Oxide)	20 V	35.1A (Ta), 127.5A (Tc)	2.5V, 10V	1.5V @ 250µA	236 nC @ 8 V	7080 pF @ 10 V	±12V	-	5W (Ta), 65.8W (Tc)	2.7mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8S	PowerPAK® 1212-8S
MSC035SMA070S	Microchip Technology	MOSFET N-CH 700V D3PAK FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 206W (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Stock150	SiCFET (Silicon Carbide)	700 V	65A (Tc)	20V	2.7V @ 1mA	99 nC @ 20 V	2010 pF @ 700 V	+23V, -10V	-	206W (Tc)	44mOhm @ 30A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IMW65R048M1HXKSA1	Infineon Technologies	MOSFET 650V NCH SIC TRENCH FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.7V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	Package: -	Stock4,305	SiCFET (Silicon Carbide)	650 V	39A (Tc)	18V	5.7V @ 6mA	33 nC @ 18 V	1118 pF @ 400 V	+23V, -5V	-	125W (Tc)	64mOhm @ 20.1A, 18V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
DI110N15PQ	Diotec Semiconductor	MOSFET PWRQFN 5X6 150V 0.0117OHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	110A (Tc)	10V	5V @ 250µA	77 nC @ 10 V	4700 pF @ 75 V	±20V	-	56W (Tc)	12mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (5x6)	8-PowerTDFN
RJK5030DPD-03-J2	Renesas	RJK5030DPD - N CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 41.7W (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	5A (Ta)	10V	4.5V @ 1mA	-	550 pF @ 25 V	±30V	-	41.7W (Tc)	1.6Ohm @ 2A, 10V	150°C	Surface Mount	MP-3A	TO-252-3, DPAK (2 Leads + Tab), SC-63
CMS10P10D-HF	Comchip Technology	MOSFET P-CH 100V 10A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1419 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	10A (Tc)	-	3V @ 250µA	20 nC @ 10 V	1419 pF @ 25 V	±20V	-	2W (Ta), 54W (Tc)	210mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
PJD80N04-AU_L2_000A1	Panjit International Inc.	40V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 79.4W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock8,970	MOSFET (Metal Oxide)	40 V	14A (Ta), 80A (Tc)	4.5V, 10V	2.5V @ 250µA	25 nC @ 4.5 V	1258 pF @ 25 V	±20V	-	2.4W (Ta), 79.4W (Tc)	5.5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63