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Infineon Technologies |
MOSFET N-CH 55V 150A D2PAK-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
|
Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock6,608 |
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MOSFET (Metal Oxide) | 55V | 120A (Tc) | 10V | 4V @ 150µA | 230nC @ 10V | 5360pF @ 25V | ±20V | - | 230W (Tc) | 4.9 mOhm @ 88A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock6,080 |
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MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 230nC @ 10V | 6000pF @ 25V | ±20V | - | 300W (Tc) | 3.3 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 9A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 340µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,264 |
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MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 3.5V @ 340µA | 22nC @ 10V | 790pF @ 100V | ±20V | - | 83W (Tc) | 385 mOhm @ 5.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4540pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 68A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock4,992 |
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MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4V @ 180µA | 110nC @ 10V | 4540pF @ 25V | ±20V | - | 250W (Tc) | 6.6 mOhm @ 68A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 33A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 52 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock109,512 |
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MOSFET (Metal Oxide) | 100V | 33A (Tc) | 10V | 4V @ 250µA | 94nC @ 10V | 1400pF @ 25V | ±20V | - | 140W (Tc) | 52 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 5A PW-MOLD2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PW-MOLD2
- Package / Case: TO-251-3 Stub Leads, IPak
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Package: TO-251-3 Stub Leads, IPak |
Stock7,456 |
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MOSFET (Metal Oxide) | 60V | 5A (Ta) | 4V, 10V | 2.5V @ 1mA | 15nC @ 10V | 730pF @ 10V | ±20V | - | 20W (Tc) | 100 mOhm @ 2.5A, 10V | 150°C (TJ) | Through Hole | PW-MOLD2 | TO-251-3 Stub Leads, IPak |
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IXYS |
MOSFET N-CH 75V 250A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 550W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock3,872 |
|
MOSFET (Metal Oxide) | 75V | 250A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 9900pF @ 25V | ±20V | - | 550W (Tc) | 4 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 20V 2.5A CHIPFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 16V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 640mW (Ta)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ChipFET?
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock36,000 |
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MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 6nC @ 4.5V | 465pF @ 16V | ±8V | - | 640mW (Ta) | 65 mOhm @ 3.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | ChipFET? | 8-SMD, Flat Lead |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 56A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,376 |
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MOSFET (Metal Oxide) | 100V | 56A (Tc) | 10V | 4V @ 250µA | 130nC @ 20V | 2000pF @ 25V | ±20V | - | 200W (Tc) | 25 mOhm @ 56A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 25V 7.6A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.04W (Ta), 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock55,212 |
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MOSFET (Metal Oxide) | 25V | 65A (Tc) | 4.5V, 10V | 2V @ 250µA | 9.5nC @ 4.5V | 1330pF @ 20V | ±20V | - | 1.04W (Ta), 62.5W (Tc) | 8.2 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 40V 120A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock4,912 |
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MOSFET (Metal Oxide) | 40V | 120A (Tc) | 5V, 10V | 4V @ 250µA | 90nC @ 4.5V | 6400pF @ 25V | ±16V | - | 300W (Tc) | 3.8 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,808 |
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MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 2V @ 250µA | 190nC @ 10V | 5000pF @ 25V | ±20V | - | 300W (Tc) | 4.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Honeywell Microelectronics & Precision Sensors |
MOSFET N-CH 55V 8-DIP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 28V
- Vgs (Max): 10V
- FET Feature: -
- Power Dissipation (Max): 50W (Tj)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 100mA, 5V
- Operating Temperature: -55°C ~ 225°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 8-CDIP-EP
- Package / Case: 8-CDIP Exposed Pad
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Package: 8-CDIP Exposed Pad |
Stock4,192 |
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MOSFET (Metal Oxide) | 55V | - | 5V | 2.4V @ 100µA | 4.3nC @ 5V | 290pF @ 28V | 10V | - | 50W (Tj) | 400 mOhm @ 100mA, 5V | -55°C ~ 225°C (TJ) | Through Hole | 8-CDIP-EP | 8-CDIP Exposed Pad |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock14,532 |
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MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 4V @ 250µA | 60nC @ 10V | 1300pF @ 25V | ±20V | - | 3.1W (Ta), 130W (Tc) | 1.2 Ohm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Texas Instruments |
MOSFET N-CH 40V 300A 8VSON-CLIP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 0.96 mOhm @ 32A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON-CLIP (5x6)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock7,984 |
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MOSFET (Metal Oxide) | 40V | 300A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 153nC @ 10V | 11400pF @ 20V | ±20V | - | 156W (Tc) | 0.96 mOhm @ 32A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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|
Infineon Technologies |
MOSFET N-CH 100V 69A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 83µA
- Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 69A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock17,076 |
|
MOSFET (Metal Oxide) | 100V | 69A (Tc) | 4.5V, 10V | 2.4V @ 83µA | 58nC @ 10V | 5600pF @ 50V | ±20V | - | 125W (Tc) | 12 mOhm @ 69A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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|
Infineon Technologies |
MOSFET N-CH 30V 100A PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 179nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 24V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 156W (Tc)
- Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock4,448 |
|
MOSFET (Metal Oxide) | 30V | 43A (Ta), 100A (Tc) | 4.5V, 10V | 2.2V @ 150µA | 179nC @ 10V | 7736pF @ 24V | ±20V | - | 3.7W (Ta), 156W (Tc) | 1.1 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 800V 46A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4.6mA
- Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10825pF @ 100V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): 446W (Tc)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 23A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock10,836 |
|
MOSFET (Metal Oxide) | 800V | 46A (Tc) | 10V | 4.5V @ 4.6mA | 255nC @ 10V | 10825pF @ 100V | ±20V | Super Junction | 446W (Tc) | 85 mOhm @ 23A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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|
Vishay Siliconix |
MOSFET N-CH 600V 6.2A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock48,444 |
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MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 4V @ 250µA | 60nC @ 10V | 1300pF @ 25V | ±20V | - | 3.1W (Ta), 130W (Tc) | 1.2 Ohm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 4.5A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 27W (Tc)
- Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.7A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock18,156 |
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MOSFET (Metal Oxide) | 100V | 4.5A (Tc) | 10V | 4V @ 250µA | 8.3nC @ 10V | 180pF @ 25V | ±20V | - | 27W (Tc) | 540 mOhm @ 2.7A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Microchip Technology |
MOSFET N-CH 100V 0.2A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Tc)
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock104,400 |
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MOSFET (Metal Oxide) | 100V | 200mA (Tj) | 5V, 10V | 2.4V @ 1mA | - | 50pF @ 25V | ±20V | - | 360mW (Tc) | 4 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 30V 12A/22.5A TDSON
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 22.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.2V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 73.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 15 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
- Rds On (Max) @ Id, Vgs: 13mOhm @ 22.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-3
- Package / Case: 8-PowerVDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 12A (Ta), 22.5A (Tc) | 10V | 2.2V @ 150µA | 73.1 nC @ 10 V | 3670 pF @ 15 V | ±25V | - | 2.5W (Ta), 69W (Tc) | 13mOhm @ 22.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-3 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 800V 8A TO220-FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 470µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-31
- Package / Case: TO-220-3 Full Pack
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 3.9V @ 470µA | 60 nC @ 10 V | 1100 pF @ 100 V | ±20V | - | 40W (Tc) | 650mOhm @ 5.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-31 | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 250V 65A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 250 V | 65A (Tc) | 7.5V, 10V | 3.5V @ 250µA | 75 nC @ 10 V | 4050 pF @ 25 V | ±20V | - | 375W (Tc) | 30mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 900V 36A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
- Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 417W (Tc)
- Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 900 V | 36A (Tc) | 10V | 3.5V @ 2.9mA | 270 nC @ 10 V | 6800 pF @ 100 V | ±20V | - | 417W (Tc) | 120mOhm @ 26A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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Microchip Technology |
MOSFET N-CH 500V 89A 264 MAX
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10550 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 50mOhm @ 44.5A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: 264 MAX™ [L2]
- Package / Case: TO-264-3, TO-264AA
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 500 V | 89A (Tc) | - | 5V @ 5mA | 200 nC @ 10 V | 10550 pF @ 25 V | - | - | - | 50mOhm @ 44.5A, 10V | - | Through Hole | 264 MAX™ [L2] | TO-264-3, TO-264AA |
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Renesas Electronics Corporation |
MOSFET N-CH 60V 60A TO251
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 10 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 84W (Tc)
- Rds On (Max) @ Id, Vgs: 8.7mOhm @ 30A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251
- Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 60A (Tc) | - | - | 95 nC @ 10 V | 5450 pF @ 10 V | - | - | 1W (Ta), 84W (Tc) | 8.7mOhm @ 30A, 10V | 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPAK, TO-251AA |
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IXYS |
DISCRETE MOSFET 12A 650V X3 TO25
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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