Page 1401 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

GP2M008A060PG
Global Power Technologies Group

MOSFET N-CH 600V 7.5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,048
NTD4813NH-35G
ON Semiconductor

MOSFET N-CH 30V 7.6A IPAK

Package: TO-251-3 Stub Leads, IPak

Stock4,224
FQPF44N08T
Fairchild/ON Semiconductor

MOSFET N-CH 80V 25A TO-220F

Package: TO-220-3 Full Pack

Stock5,328
IRF2907ZSTRLPBF
Infineon Technologies

MOSFET N-CH 75V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,912
BSO040N03MSGXUMA1
Infineon Technologies

MOSFET N-CH 30V 16A 8DSO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock59,700
IXTK128N15
IXYS

MOSFET N-CH 150V 128A TO-264

Package: TO-264-3, TO-264AA

Stock4,912
2SK3800
Sanken

MOSFET N-CH 40V TO-220S

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,136
AOTF20C60PL
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 20A

Package: TO-220-3 Full Pack

Stock4,640
RSS130N03FU6TB
Rohm Semiconductor

MOSFET N-CH 30V 13A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock188,556
IRF614PBF
Vishay Siliconix

MOSFET N-CH 250V 2.7A TO-220AB

Package: TO-220-3

Stock103,464
RJK0851DPB-00#J5
Renesas Electronics America

MOSFET N-CH 80V 20A LFPAK

Package: SC-100, SOT-669

Stock3,536
AON6586
Alpha & Omega Semiconductor Inc.

MOSFET N-CH

Package: 8-PowerSMD, Flat Leads

Stock4,800
PMZB950UPELYL
Nexperia USA Inc.

PMZB950UPEL/SOT883/XQFN3

Package: -

Stock7,152
HUF75639P3
Fairchild/ON Semiconductor

MOSFET N-CH 100V 56A TO-220AB

Package: TO-220-3

Stock156,684
IRFR220NTRLPBF
Infineon Technologies

MOSFET N-CH 200V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock69,348
RAL025P01TCR
Rohm Semiconductor

MOSFET P-CH 12V 2.5A TUMT6

Package: 6-SMD, Flat Leads

Stock120,012
STL8NH3LL
STMicroelectronics

MOSFET N-CH 30V 8A PWRFLAT3.3SQ

Package: 8-PowerVDFN

Stock193,512
IRFPS37N50APBF
Vishay Siliconix

MOSFET N-CH 500V 36A SUPER247

Package: TO-274AA

Stock10,176
RJK1525DPP-MG-T2
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
SI1467DH-T1-BE3
Vishay Siliconix

MOSFET P-CH 20V 3A/2.7A SC70-6

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
GP2M008A060PG	Global Power Technologies Group	MOSFET N-CH 600V 7.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,048	MOSFET (Metal Oxide)	600V	7.5A (Tc)	10V	5V @ 250µA	23nC @ 10V	1063pF @ 25V	±30V	-	120W (Tc)	1.2 Ohm @ 3.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD4813NH-35G	ON Semiconductor	MOSFET N-CH 30V 7.6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.27W (Ta), 35.3W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock4,224	MOSFET (Metal Oxide)	30V	7.6A (Ta), 40A (Tc)	4.5V, 11.5V	2.5V @ 250µA	10nC @ 4.5V	940pF @ 12V	±20V	-	1.27W (Ta), 35.3W (Tc)	13 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
FQPF44N08T	Fairchild/ON Semiconductor	MOSFET N-CH 80V 25A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,328	MOSFET (Metal Oxide)	80V	25A (Tc)	10V	4V @ 250µA	50nC @ 10V	1430pF @ 25V	±25V	-	41W (Tc)	34 mOhm @ 12.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IRF2907ZSTRLPBF	Infineon Technologies	MOSFET N-CH 75V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,912	MOSFET (Metal Oxide)	75V	160A (Tc)	10V	4V @ 250µA	270nC @ 10V	7500pF @ 25V	±20V	-	300W (Tc)	4.5 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSO040N03MSGXUMA1	Infineon Technologies	MOSFET N-CH 30V 16A 8DSO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock59,700	MOSFET (Metal Oxide)	30V	16A (Ta)	4.5V, 10V	2V @ 250µA	73nC @ 10V	5700pF @ 15V	±20V	-	1.56W (Ta)	4 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
IXTK128N15	IXYS	MOSFET N-CH 150V 128A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 128A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock4,912	MOSFET (Metal Oxide)	150V	128A (Tc)	10V	4V @ 250µA	240nC @ 10V	6000pF @ 25V	±20V	-	540W (Tc)	15 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
2SK3800	Sanken	MOSFET N-CH 40V TO-220S FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 35A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220S Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,136	MOSFET (Metal Oxide)	40V	70A (Ta)	10V	4V @ 1mA	-	5100pF @ 10V	±20V	-	80W (Tc)	6 mOhm @ 35A, 10V	150°C (TJ)	Surface Mount	TO-220S	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AOTF20C60PL	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 20A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3607pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,640	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 250µA	80nC @ 10V	3607pF @ 100V	±30V	-	45W (Tc)	250 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
RSS130N03FU6TB	Rohm Semiconductor	MOSFET N-CH 30V 13A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 8.1 mOhm @ 13A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock188,556	MOSFET (Metal Oxide)	30V	13A (Ta)	4V, 10V	2.5V @ 1mA	35nC @ 5V	2000pF @ 10V	20V	-	2W (Ta)	8.1 mOhm @ 13A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
IRF614PBF	Vishay Siliconix	MOSFET N-CH 250V 2.7A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	250V	2.7A (Tc)	10V	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	±20V	-	36W (Tc)	2 Ohm @ 1.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
RJK0851DPB-00#J5	Renesas Electronics America	MOSFET N-CH 80V 20A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock3,536	MOSFET (Metal Oxide)	80V	20A (Ta)	4.5V, 10V	2.5V @ 1mA	14nC @ 4.5V	2050pF @ 10V	±20V	-	45W (Tc)	23 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
AON6586	Alpha & Omega Semiconductor Inc.	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock4,800	MOSFET (Metal Oxide)	30V	20A (Ta), 35A (Tc)	4.5V, 10V	2.5V @ 250µA	30nC @ 10V	1150pF @ 15V	±20V	-	5W (Ta), 41W (Tc)	7.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
PMZB950UPELYL	Nexperia USA Inc.	PMZB950UPEL/SOT883/XQFN3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,152	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HUF75639P3	Fairchild/ON Semiconductor	MOSFET N-CH 100V 56A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock156,684	MOSFET (Metal Oxide)	100V	56A (Tc)	10V	4V @ 250µA	130nC @ 20V	2000pF @ 25V	±20V	-	200W (Tc)	25 mOhm @ 56A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFR220NTRLPBF	Infineon Technologies	MOSFET N-CH 200V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock69,348	MOSFET (Metal Oxide)	200V	5A (Tc)	10V	4V @ 250µA	23nC @ 10V	300pF @ 25V	±20V	-	43W (Tc)	600 mOhm @ 2.9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
RAL025P01TCR	Rohm Semiconductor	MOSFET P-CH 12V 2.5A TUMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 6V Vgs (Max): -8V FET Feature: - Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 62 mOhm @ 2.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock120,012	MOSFET (Metal Oxide)	12V	2.5A (Ta)	1.5V, 4.5V	1V @ 1mA	16nC @ 4.5V	2000pF @ 6V	-8V	-	320mW (Ta)	62 mOhm @ 2.5A, 4.5V	150°C (TJ)	Surface Mount	TUMT6	6-SMD, Flat Leads
STL8NH3LL	STMicroelectronics	MOSFET N-CH 30V 8A PWRFLAT3.3SQ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 965pF @ 25V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 2W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock193,512	MOSFET (Metal Oxide)	30V	8A (Tc)	4.5V, 10V	2.5V @ 250µA	12nC @ 4.5V	965pF @ 25V	±18V	-	2W (Ta), 50W (Tc)	15 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (3.3x3.3)	8-PowerVDFN
IRFPS37N50APBF	Vishay Siliconix	MOSFET N-CH 500V 36A SUPER247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5579pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-247 (TO-274AA) Package / Case: TO-274AA	Package: TO-274AA	Stock10,176	MOSFET (Metal Oxide)	500V	36A (Tc)	10V	4V @ 250µA	180nC @ 10V	5579pF @ 25V	±30V	-	446W (Tc)	130 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	SUPER-247 (TO-274AA)	TO-274AA
RJK1525DPP-MG-T2	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI1467DH-T1-BE3	Vishay Siliconix	MOSFET P-CH 20V 3A/2.7A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	3A (Ta), 2.7A (Tc)	-	1V @ 250µA	13.5 nC @ 4.5 V	561 pF @ 10 V	±8V	-	1.5W (Ta), 2.78W (Tc)	90mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
MCAC80N06YA-TP	Micro Commercial Co	MCAC80N06YA-TP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4894 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	80A (Tc)	4.5V, 10V	2.5V @ 250µA	99 nC @ 10 V	4894 pF @ 30 V	±20V	-	85W (Tc)	2.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
5HN02M-TL-E	onsemi	N-CHANNEL SMALL SIGNAL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AM2329P-T1-PF-ML	MOSLEADER	Single P -30V 2.5A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SM2406NSANC-TRG-ML	MOSLEADER	N 30V 4.3A SOT-23N FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC010N04LS6ATMA1	Infineon Technologies	MOSFET N-CH 40V 40A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	Package: -	Stock31,635	MOSFET (Metal Oxide)	40 V	40A (Ta), 100A (Tc)	4.5V, 10V	2.3V @ 250µA	67 nC @ 4.5 V	4600 pF @ 20 V	±20V	-	3W (Ta), 150W (Tc)	1mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-6	8-PowerTDFN
IXTP14N60X2	IXYS	MOSFET N-CH 600V 14A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	14A (Tc)	10V	4.5V @ 250µA	16.7 nC @ 10 V	740 pF @ 25 V	±30V	-	180W (Tc)	250mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IPP033N04NF2SAKMA1	Infineon Technologies	TRENCH PG-TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 113A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 53µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-U05 Package / Case: TO-220-3	Package: -	Stock2,406	MOSFET (Metal Oxide)	40 V	25A (Ta), 113A (Tc)	6V, 10V	3.4V @ 53µA	68 nC @ 10 V	3200 pF @ 20 V	±20V	-	3.8W (Ta), 107W (Tc)	3.3mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-U05	TO-220-3
IXKT70N60C5-TUB	IXYS	MOSFET N-CH 600V 68A TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-268AA Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	68A (Tc)	-	-	-	-	-	-	-	-	-	Surface Mount	TO-268AA	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA