Page 1404 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLR3714Z
Infineon Technologies

MOSFET N-CH 20V 37A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,832
IXTV30N60P
IXYS

MOSFET N-CH 600V 30A PLUS220

Package: TO-220-3, Short Tab

Stock7,056
HUFA75321D3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 20A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,024
FDU6512A
Fairchild/ON Semiconductor

MOSFET N-CH 20V 10.7A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,768
IRFBF30STRR
Vishay Siliconix

MOSFET N-CH 900V 3.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,408
STB6N52K3
STMicroelectronics

MOSFET N-CH 525V 5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,208
DMN62D0LFB-7
Diodes Incorporated

MOSFET N-CH 60V X2-DFN1006-3

Package: 3-UFDFN

Stock36,000
TSM13N50ACI C0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

Package: TO-220-3 Full Pack, Isolated Tab

Stock6,080
TSM60N600CP ROG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,520
AO7415
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 2A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock39,600
STW32N65M5
STMicroelectronics

MOSFET N-CH 650V 24A TO-247

Package: TO-247-3

Stock22,308
PSMN4R4-80BS,118
Nexperia USA Inc.

MOSFET N-CH 80V 100A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock23,028
SIHD7N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 7A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock34,260
NTTFS4824NTAG
ON Semiconductor

MOSFET N-CH 30V 8.3A 8WDFN

Package: 8-PowerWDFN

Stock14,928
SI4866DY-T1-E3
Vishay Siliconix

MOSFET N-CH 12V 11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,422,780
NTB25P06T4G
ON Semiconductor

MOSFET P-CH 60V 27.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock421,368
PSMN022-30BL,118
Nexperia USA Inc.

MOSFET N-CH 30V 30A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock35,112
DMN6040SE-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V SOT223 T&R

Package: -

Stock5,097
NVMFWS3D0P04M8LT1G
onsemi

MV8 P INITIAL PROGRAM

Package: -

Stock4,458
SIHK125N60E-T1-GE3
Vishay Siliconix

E SERIES POWER MOSFET POWERPAK 1

Package: -

Stock6,150

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLR3714Z	Infineon Technologies	MOSFET N-CH 20V 37A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,832	MOSFET (Metal Oxide)	20V	37A (Tc)	4.5V, 10V	2.55V @ 250µA	7.1nC @ 4.5V	560pF @ 10V	±20V	-	35W (Tc)	15 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTV30N60P	IXYS	MOSFET N-CH 600V 30A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock7,056	MOSFET (Metal Oxide)	600V	30A (Tc)	10V	5V @ 250µA	82nC @ 10V	5050pF @ 25V	±30V	-	540W (Tc)	240 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS220	TO-220-3, Short Tab
HUFA75321D3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 20A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,024	MOSFET (Metal Oxide)	55V	20A (Tc)	10V	4V @ 250µA	44nC @ 20V	680pF @ 25V	±20V	-	93W (Tc)	36 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
FDU6512A	Fairchild/ON Semiconductor	MOSFET N-CH 20V 10.7A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1082pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 10.7A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,768	MOSFET (Metal Oxide)	20V	10.7A (Ta), 36A (Tc)	2.5V, 4.5V	1.5V @ 250µA	19nC @ 4.5V	1082pF @ 10V	±12V	-	3.8W (Ta), 43W (Tc)	21 mOhm @ 10.7A, 4.5V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRFBF30STRR	Vishay Siliconix	MOSFET N-CH 900V 3.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,408	MOSFET (Metal Oxide)	900V	3.6A (Tc)	10V	4V @ 250µA	78nC @ 10V	1200pF @ 25V	±20V	-	125W (Tc)	3.7 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB6N52K3	STMicroelectronics	MOSFET N-CH 525V 5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,208	MOSFET (Metal Oxide)	525V	5A (Tc)	10V	4.5V @ 50µA	26nC @ 10V	670pF @ 50V	±30V	-	70W (Tc)	1.2 Ohm @ 2.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMN62D0LFB-7	Diodes Incorporated	MOSFET N-CH 60V X2-DFN1006-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 470mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 100mA, 4V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-X1DFN1006 Package / Case: 3-UFDFN	Package: 3-UFDFN	Stock36,000	MOSFET (Metal Oxide)	60V	100mA (Ta)	1.5V, 4V	1V @ 250µA	0.45nC @ 4.5V	32pF @ 25V	±20V	-	470mW (Ta)	2 Ohm @ 100mA, 4V	-55°C ~ 150°C (TJ)	Surface Mount	3-X1DFN1006	3-UFDFN
TSM13N50ACI C0G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, PLANA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1965pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock6,080	MOSFET (Metal Oxide)	500V	13A (Tc)	10V	4V @ 250µA	31nC @ 10V	1965pF @ 25V	±30V	-	52W (Tc)	480 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220	TO-220-3 Full Pack, Isolated Tab
TSM60N600CP ROG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, SUPER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 743pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,520	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	4V @ 250µA	13nC @ 10V	743pF @ 100V	±30V	-	83W (Tc)	600 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
AO7415	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 20V 2A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 630mW (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock39,600	MOSFET (Metal Oxide)	20V	2A (Ta)	2.5V, 10V	1.4V @ 250µA	6nC @ 4.5V	620pF @ 10V	±12V	-	630mW (Ta)	100 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
STW32N65M5	STMicroelectronics	MOSFET N-CH 650V 24A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 119 mOhm @ 12A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock22,308	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	5V @ 250µA	72nC @ 10V	3320pF @ 100V	±25V	-	150W (Tc)	119 mOhm @ 12A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
PSMN4R4-80BS,118	Nexperia USA Inc.	MOSFET N-CH 80V 100A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock23,028	MOSFET (Metal Oxide)	80V	100A (Tc)	10V	4V @ 1mA	125nC @ 10V	8400pF @ 40V	±20V	-	306W (Tc)	4.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHD7N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 7A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock34,260	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	4V @ 250µA	40nC @ 10V	680pF @ 100V	±30V	-	78W (Tc)	600 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
NTTFS4824NTAG	ON Semiconductor	MOSFET N-CH 30V 8.3A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 2363pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 660mW (Ta), 46.3W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock14,928	MOSFET (Metal Oxide)	30V	8.3A (Ta), 69A (Tc)	4.5V, 11.5V	2.5V @ 250µA	29nC @ 11.5V	2363pF @ 12V	±20V	-	660mW (Ta), 46.3W (Tc)	5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
SI4866DY-T1-E3	Vishay Siliconix	MOSFET N-CH 12V 11A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 17A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,422,780	MOSFET (Metal Oxide)	12V	11A (Ta)	2.5V, 4.5V	600mV @ 250µA (Min)	30nC @ 4.5V	-	±8V	-	1.6W (Ta)	5.5 mOhm @ 17A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NTB25P06T4G	ON Semiconductor	MOSFET P-CH 60V 27.5A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 120W (Tj) Rds On (Max) @ Id, Vgs: 82 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock421,368	MOSFET (Metal Oxide)	60V	27.5A (Ta)	10V	4V @ 250µA	50nC @ 10V	1680pF @ 25V	±15V	-	120W (Tj)	82 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN022-30BL,118	Nexperia USA Inc.	MOSFET N-CH 30V 30A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 447pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 22.6 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock35,112	MOSFET (Metal Oxide)	30V	30A (Tc)	4.5V, 10V	2.15V @ 1mA	9nC @ 10V	447pF @ 15V	±20V	-	41W (Tc)	22.6 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMN6040SE-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V SOT223 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-3 Package / Case: TO-261-4, TO-261AA	Package: -	Stock5,097	MOSFET (Metal Oxide)	60 V	5A (Ta)	4.5V, 10V	3V @ 250µA	22.4 nC @ 10 V	1287 pF @ 25 V	±20V	-	1.2W (Ta)	40mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
NVMFWS3D0P04M8LT1G	onsemi	MV8 P INITIAL PROGRAM FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 171W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock4,458	MOSFET (Metal Oxide)	40 V	28A (Ta), 183A (Tc)	4.5V, 10V	2.4V @ 2mA	124 nC @ 10 V	5827 pF @ 20 V	±20V	-	3.9W (Ta), 171W (Tc)	2.7mOhm @ 30A,10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
SIHK125N60E-T1-GE3	Vishay Siliconix	E SERIES POWER MOSFET POWERPAK 1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1811 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 132W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK®10 x 12 Package / Case: 8-PowerBSFN	Package: -	Stock6,150	MOSFET (Metal Oxide)	600 V	21A (Tc)	10V	5V @ 250µA	44 nC @ 10 V	1811 pF @ 100 V	±30V	-	132W (Tc)	125mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK®10 x 12	8-PowerBSFN
BSC070N10LS5ATMA1	Infineon Technologies	MOSFET N-CH 100V 14A/79A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 49µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	Package: -	Stock5,436	MOSFET (Metal Oxide)	100 V	14A (Ta), 79A (Tc)	4.5V, 10V	2.3V @ 49µA	20 nC @ 4.5 V	2700 pF @ 50 V	±20V	-	2.5W (Ta), 83W (Tc)	7mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-7	8-PowerTDFN
PJL9409_R2_00001	Panjit International Inc.	30V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	6A (Ta)	4.5V, 10V	2.5V @ 250µA	7.8 nC @ 4.5 V	870 pF @ 15 V	±20V	-	1.7W (Ta)	30mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
SPP1421DMR2G	Nexperia USA Inc.	SPP1421 - ANA 500MA SYNC-RECT PF FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHA17N80AE-GE3	Vishay Siliconix	MOSFET N-CH 800V 7A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: -	Stock42	MOSFET (Metal Oxide)	800 V	7A (Tc)	10V	4V @ 250µA	62 nC @ 10 V	1260 pF @ 100 V	±30V	-	34W (Tc)	290mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
PJQ4548P-AU_R2_002A1	Panjit International Inc.	40V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333-8 Package / Case: 8-PowerVDFN	Package: -	Stock10,980	MOSFET (Metal Oxide)	40 V	12.4A (Ta), 43A (Tc)	4.5V, 10V	2.3V @ 50µA	13 nC @ 10 V	778 pF @ 25 V	±20V	-	2.5W (Ta), 30W (Tc)	9.1mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN3333-8	8-PowerVDFN
NVMFS5C468NLWFAFT1G	onsemi	MOSFET N-CH 40V 37A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock4,500	MOSFET (Metal Oxide)	40 V	37A (Tc)	4.5V, 10V	2V @ 250µA	7.3 nC @ 10 V	570 pF @ 25 V	±20V	-	28W (Tc)	10.3mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	5-DFNW (4.9x5.9) (8-SOFL-WF)	8-PowerTDFN, 5 Leads
SQS460EN-T1_BE3	Vishay Siliconix	MOSFET N-CH 60V 8A PPAK1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	Package: -	Stock184,077	MOSFET (Metal Oxide)	60 V	8A (Tc)	4.5V, 10V	2.5V @ 250µA	20 nC @ 10 V	755 pF @ 25 V	±20V	-	39W (Tc)	36mOhm @ 5.3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
FDD86380-F085	onsemi	MOSFET N-CH 80V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tj) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,500	MOSFET (Metal Oxide)	80 V	50A (Tc)	10V	4V @ 250µA	30 nC @ 10 V	1440 pF @ 40 V	±20V	-	75W (Tj)	13.5mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63