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Infineon Technologies |
MOSFET N-CH 55V 17A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252AA)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,888 |
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MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 370pF @ 25V | ±20V | - | 3.8W (Ta), 45W (Tc) | 70 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 36A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 47W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock38,400 |
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MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 3V @ 250µA | 9.7nC @ 4.5V | 670pF @ 10V | ±20V | - | 47W (Tc) | 20 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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NXP |
MOSFET N-CH 80V LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
|
Package: SC-100, SOT-669 |
Stock7,664 |
|
MOSFET (Metal Oxide) | 80V | - | - | - | - | - | - | - | - | - | - | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Diodes Incorporated |
MOSFET N-CH 30V 7.62A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.85nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 990mW (Ta)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 11.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN3030-8
- Package / Case: 8-PowerUDFN
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Package: 8-PowerUDFN |
Stock28,464 |
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MOSFET (Metal Oxide) | 30V | 7.62A (Ta) | 4.5V, 10V | 2V @ 250µA | 18.85nC @ 10V | 867pF @ 10V | ±20V | - | 990mW (Ta) | 15 mOhm @ 11.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN3030-8 | 8-PowerUDFN |
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Infineon Technologies |
MOSFET N-CH 650V 20.7A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 220 mOhm @ 13.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock12,828 |
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MOSFET (Metal Oxide) | 650V | 20.7A (Tc) | 10V | 5V @ 1mA | 124nC @ 10V | 2400pF @ 25V | ±20V | - | 208W (Tc) | 220 mOhm @ 13.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 15A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3775pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock7,216 |
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MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 3V @ 250µA | 40nC @ 4.5V | 3775pF @ 15V | ±20V | - | 1.8W (Ta) | 4.2 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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STMicroelectronics |
MOSFET N-CH 100V 23A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock919,068 |
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MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 4V @ 250µA | 40nC @ 10V | 870pF @ 25V | ±20V | - | 70W (Tc) | 65 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia USA Inc. |
MOSFET N-CH 25V 70A LFPAK33
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1524pF @ 12.5V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 69W (Tc)
- Rds On (Max) @ Id, Vgs: 4.15 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK33
- Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
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Package: SOT-1210, 8-LFPAK33 (5-Lead) |
Stock5,328 |
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MOSFET (Metal Oxide) | 25V | 70A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 21.5nC @ 10V | 1524pF @ 12.5V | ±20V | - | 69W (Tc) | 4.15 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) |
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STMicroelectronics |
MOSFET N-CH 650V 17A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock397,536 |
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MOSFET (Metal Oxide) | 650V | 17A (Tc) | 10V | 5V @ 250µA | 50nC @ 10V | 1950pF @ 100V | ±25V | - | 125W (Tc) | 190 mOhm @ 8.5A, 10V | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET P-CH 20V 1A SOT-23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 5V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,440 |
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MOSFET (Metal Oxide) | 20V | 1A (Ta) | 4.5V, 10V | 2.3V @ 250µA | 2.5nC @ 5V | 165pF @ 5V | ±20V | - | 400mW (Ta) | 180 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 80V 65A POWER56
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2470pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 65A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Power56
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock29,994 |
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MOSFET (Metal Oxide) | 80V | 65A (Tc) | 10V | 4V @ 250µA | 46nC @ 10V | 2470pF @ 40V | ±20V | - | 107W (Tc) | 7.5 mOhm @ 65A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 39A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 19.4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock7,296 |
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MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 3.7V @ 1.9mA | 110nC @ 10V | 4100pF @ 300V | ±30V | - | 50W (Tc) | 65 mOhm @ 19.4A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET P-CH 100V 6.6A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 480 mOhm @ 3.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock13,944 |
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MOSFET (Metal Oxide) | 100V | 6.6A (Tc) | 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | ±20V | - | 40W (Tc) | 480 mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 60V 2A SOT-89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 2A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MPT3
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock404,676 |
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MOSFET (Metal Oxide) | 60V | 2A (Ta) | 4V, 10V | 2.5V @ 1mA | 14nC @ 10V | 140pF @ 10V | ±20V | - | 500mW (Ta) | 200 mOhm @ 2A, 10V | 150°C (TJ) | Surface Mount | MPT3 | TO-243AA |
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STMicroelectronics |
MOSFET N-CH 800V 4.5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 100V
- Vgs (Max): 30V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock44,040 |
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MOSFET (Metal Oxide) | 800V | 4.5A (Tc) | 10V | 5V @ 100µA | 7.5nC @ 10V | 255pF @ 100V | 30V | - | 85W (Tc) | 1.6 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
P-CHANNEL 30-V (D-S) 175C MOSFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
|
Package: - |
Stock18,000 |
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MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 100 nC @ 10 V | 4900 pF @ 25 V | ±20V | - | 45W (Tc) | 9.2mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Diodes Incorporated |
MOSFET BVDSS: 651V~800V TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB (Type TH)
- Package / Case: TO-220-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 700 V | 8.5A (Tc) | 10V | 5V @ 250µA | 17.4 nC @ 10 V | 570 pF @ 25 V | ±30V | - | 2.3W (Ta), 104W (Tc) | 600mOhm @ 2.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB (Type TH) | TO-220-3 |
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MOSLEADER |
P-Channel -20V 2.4A SOT-23-3
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
MOSFET N-CH 600V 38A TO264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 150mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 [L]
- Package / Case: TO-264-3, TO-264AA
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 38A (Tc) | - | 4V @ 2.5mA | 475 nC @ 10 V | 9000 pF @ 25 V | - | - | - | 150mOhm @ 500mA, 10V | - | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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IXYS |
DISCRETE MOSFET 20A 600V X3 TO22
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Taiwan Semiconductor Corporation |
700V, 4.5A, SINGLE N-CHANNEL POW
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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MOSFET (Metal Oxide) | 700 V | 4.5A (Tc) | 10V | 4V @ 250µA | 9.7 nC @ 10 V | 482 pF @ 100 V | ±30V | - | 20W (Tc) | 900mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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IXYS |
DISCRETE MOSFET 18A 650V X3 TO22
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Renesas Electronics Corporation |
N-CHANNEL , 150V, 30A
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Renesas Electronics Corporation |
MOSFET N-CH 60V 8A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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MOSFET (Metal Oxide) | 60 V | 8A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 10 nC @ 4.5 V | 1210 pF @ 10 V | ±20V | - | 2W (Ta) | 30mOhm @ 4A, 10V | 150°C | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Micro Commercial Co |
MOSFET N-CH 100V 2A SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W
- Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock501,051 |
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MOSFET (Metal Oxide) | 100 V | 2A (Tj) | 4.5V, 10V | 2V @ 250µA | 4.8 nC @ 4.5 V | 520 pF @ 15 V | ±20V | - | 1.2W | 280mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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MOSLEADER |
Single-N 30V 4A SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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onsemi |
NTH4LN040N65S3H
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 6.8mA
- Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6513 pF @ 400 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 379W (Tc)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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Package: - |
Stock1,341 |
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MOSFET (Metal Oxide) | 650 V | 62A (Tc) | 10V | 4V @ 6.8mA | 132 nC @ 10 V | 6513 pF @ 400 V | ±30V | - | 379W (Tc) | 40mOhm @ 31A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |