Page 1407 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPA80R1K4CEXKSA1
Infineon Technologies

MOSFET N-CH 800V TO-220-3

Package: TO-220-3 Full Pack

Stock6,864
IRF7521D1
Infineon Technologies

MOSFET N-CH 20V 2.4A MICRO-8

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock5,120
BMS3004-1EX
ON Semiconductor

MOSFET P-CH TO220-3

Package: -

Stock7,104
AOC2403
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 1.8A 4WLCSP

Package: 4-SMD, No Lead

Stock5,888
BBS3002-DL-E
ON Semiconductor

MOSFET P-CH 60V 100A SMP-FD

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,712
NTLJS4149PTBG
ON Semiconductor

MOSFET P-CH 30V 4.6A SGL 6WDFN

Package: 6-WDFN Exposed Pad

Stock5,456
SFP9540
Fairchild/ON Semiconductor

MOSFET P-CH 100V 17A TO-220

Package: TO-220-3

Stock37,284
AUIRFS6535
Infineon Technologies

MOSFET N CH 300V 19A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,232
IPB120N04S4L02ATMA1
Infineon Technologies

MOSFET N-CH TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,416
IPD85P04P407ATMA1
Infineon Technologies

MOSFET N-CH TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,992
SIHB22N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 21A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock13,068
HUF75339P3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A TO-220AB

Package: TO-220-3

Stock28,572
DMN2114SN-7
Diodes Incorporated

MOSFET N-CH 20V 1.2A SC59-3

Package: TO-236-3, SC-59, SOT-23-3

Stock5,520
STFI10N65K3
STMicroelectronics

MOSFET N-CH 650V 10A I2PAKFP

Package: TO-262-3 Full Pack, I2Pak

Stock14,640
IRLU024NPBF
Infineon Technologies

MOSFET N-CH 55V 17A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock227,376
NDS356AP-NB8L005A
onsemi

-30V P-CHANNEL LOGIC LEVEL ENHAN

Package: -

Request a Quote
SFS9640
Fairchild Semiconductor

POWER FIELD-EFFECT TRANSISTOR

Package: -

Request a Quote
IRLIZ24GPBF
Vishay Siliconix

MOSFET N-CHANNEL 60V 14A TO220

Package: -

Request a Quote
PJMP900N60EC_T0_00001
Panjit International Inc.

600V SUPER JUNCTION MOSFET

Package: -

Stock5,994
SI2301CDS-T1-GE3-ML
MOSLEADER

P -20V 3.1A SOT-23

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPA80R1K4CEXKSA1	Infineon Technologies	MOSFET N-CH 800V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.3A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,864	MOSFET (Metal Oxide)	800V	2.8A (Tc)	10V	3.9V @ 240µA	23nC @ 10V	570pF @ 100V	±20V	-	31W (Tc)	1.4 Ohm @ 2.3A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
IRF7521D1	Infineon Technologies	MOSFET N-CH 20V 2.4A MICRO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8? Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock5,120	MOSFET (Metal Oxide)	20V	2.4A (Ta)	2.7V, 4.5V	700mV @ 250µA	8nC @ 4.5V	260pF @ 15V	±12V	Schottky Diode (Isolated)	1.3W (Ta)	135 mOhm @ 1.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Micro8?	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
BMS3004-1EX	ON Semiconductor	MOSFET P-CH TO220-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,104	-	-	-	4V, 10V	-	-	-	±20V	-	-	-	-	-	-	-
AOC2403	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 20V 1.8A 4WLCSP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 450mW (Ta) Rds On (Max) @ Id, Vgs: 95 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-AphaDFN (0.97x0.97) Package / Case: 4-SMD, No Lead	Package: 4-SMD, No Lead	Stock5,888	MOSFET (Metal Oxide)	20V	1.8A (Ta)	1.5V, 4.5V	1V @ 250µA	4.8nC @ 4.5V	405pF @ 10V	±8V	-	450mW (Ta)	95 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-AphaDFN (0.97x0.97)	4-SMD, No Lead
BBS3002-DL-E	ON Semiconductor	MOSFET P-CH 60V 100A SMP-FD FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMP-FD Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,712	MOSFET (Metal Oxide)	60V	100A (Ta)	4V, 10V	-	280nC @ 10V	13200pF @ 20V	±20V	-	90W (Tc)	5.8 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SMP-FD	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTLJS4149PTBG	ON Semiconductor	MOSFET P-CH 30V 4.6A SGL 6WDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 62 mOhm @ 4.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WDFN (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock5,456	MOSFET (Metal Oxide)	30V	2.7A (Ta)	2.5V, 4.5V	1V @ 250µA	15nC @ 4.5V	960pF @ 15V	±12V	-	700mW (Ta)	62 mOhm @ 4.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN (2x2)	6-WDFN Exposed Pad
SFP9540	Fairchild/ON Semiconductor	MOSFET P-CH 100V 17A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 132W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock37,284	MOSFET (Metal Oxide)	100V	17A (Tc)	10V	4V @ 250µA	54nC @ 10V	1535pF @ 25V	±30V	-	132W (Tc)	200 mOhm @ 8.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
AUIRFS6535	Infineon Technologies	MOSFET N CH 300V 19A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 185 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,232	MOSFET (Metal Oxide)	300V	19A (Tc)	10V	5V @ 150µA	57nC @ 10V	2340pF @ 25V	±20V	-	210W (Tc)	185 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB120N04S4L02ATMA1	Infineon Technologies	MOSFET N-CH TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14560pF @ 25V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,416	MOSFET (Metal Oxide)	40V	120A (Tc)	4.5V, 10V	2.2V @ 110µA	190nC @ 10V	14560pF @ 25V	+20V, -16V	-	158W (Tc)	1.7 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPD85P04P407ATMA1	Infineon Technologies	MOSFET N-CH TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6085pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 85A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,992	MOSFET (Metal Oxide)	40V	85A (Tc)	10V	4V @ 150µA	89nC @ 10V	6085pF @ 25V	±20V	-	88W (Tc)	7.3 mOhm @ 85A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPak (2 Leads + Tab), SC-63
SIHB22N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 21A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock13,068	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	4V @ 250µA	86nC @ 10V	1920pF @ 100V	±30V	-	227W (Tc)	180 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUF75339P3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock28,572	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	130nC @ 20V	2000pF @ 25V	±20V	-	200W (Tc)	12 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
DMN2114SN-7	Diodes Incorporated	MOSFET N-CH 20V 1.2A SC59-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-59-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock5,520	MOSFET (Metal Oxide)	20V	1.2A (Ta)	2.5V, 4.5V	1.4V @ 1mA	-	180pF @ 10V	±12V	-	500mW (Ta)	100 mOhm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-59-3	TO-236-3, SC-59, SOT-23-3
STFI10N65K3	STMicroelectronics	MOSFET N-CH 650V 10A I2PAKFP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock14,640	MOSFET (Metal Oxide)	650V	10A (Tc)	10V	4.5V @ 100µA	42nC @ 10V	1180pF @ 25V	±30V	-	35W (Tc)	1 Ohm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
IRLU024NPBF	Infineon Technologies	MOSFET N-CH 55V 17A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock227,376	MOSFET (Metal Oxide)	55V	17A (Tc)	4V, 10V	2V @ 250µA	15nC @ 5V	480pF @ 25V	±16V	-	45W (Tc)	65 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
NDS356AP-NB8L005A	onsemi	-30V P-CHANNEL LOGIC LEVEL ENHAN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	1.1A (Ta)	4.5V, 10V	2.5V @ 250µA	4.4 nC @ 5 V	280 pF @ 10 V	±20V	-	500mW (Ta)	200mOhm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SFS9640	Fairchild Semiconductor	POWER FIELD-EFFECT TRANSISTOR FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	6.2A (Tc)	10V	4V @ 250µA	59 nC @ 10 V	1585 pF @ 25 V	±30V	-	40W (Tc)	500mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IRLIZ24GPBF	Vishay Siliconix	MOSFET N-CHANNEL 60V 14A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	14A (Tc)	4V, 5V	2V @ 250µA	18 nC @ 5 V	870 pF @ 25 V	±10V	-	37W (Tc)	100mOhm @ 8.4A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
PJMP900N60EC_T0_00001	Panjit International Inc.	600V SUPER JUNCTION MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 47.5W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB-L Package / Case: TO-220-3	Package: -	Stock5,994	MOSFET (Metal Oxide)	600 V	5A (Tc)	10V	4V @ 250µA	8.8 nC @ 10 V	310 pF @ 400 V	±30V	-	47.5W (Tc)	900mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB-L	TO-220-3
SI2301CDS-T1-GE3-ML	MOSLEADER	P -20V 3.1A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STLD126N4F6AG	STMicroelectronics	DISCRETE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJD60P04E-AU_L2_006A1	Panjit International Inc.	40V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock8,955	MOSFET (Metal Oxide)	40 V	12A (Ta), 61A (Tc)	4.5V, 10V	2.5V @ 250µA	56 nC @ 10 V	2897 pF @ 25 V	±25V	-	3W (Ta), 75W (Tc)	11.3mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPBE65R099CFD7AATMA1	Infineon Technologies	MOSFET N-CH 650V 24A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 127W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3-10 Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	4.5V @ 630µA	53 nC @ 10 V	2513 pF @ 400 V	±20V	-	127W (Tc)	99mOhm @ 12.5A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263-7-3-10	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
BSC080N12LSGATMA1	Infineon Technologies	TRENCH >=100V PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 112µA Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: -	Stock7,608	MOSFET (Metal Oxide)	120 V	12A (Ta), 99A (Tc)	4.5V, 10V	2.4V @ 112µA	79 nC @ 10 V	7400 pF @ 60 V	±20V	-	156W (Tc)	8mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
FDMS9409L-F085	onsemi	MOSFET N-CH 40V 65A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tj) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 65A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	65A (Tc)	4.5V, 10V	3V @ 250µA	70 nC @ 10 V	3360 pF @ 20 V	±20V	-	100W (Tj)	2.8mOhm @ 65A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
PJQ2461_R1_00001	Panjit International Inc.	60V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020B-6 Package / Case: 6-WDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	2.4A (Ta)	4.5V, 10V	2.5V @ 250µA	8.3 nC @ 10 V	430 pF @ 30 V	±20V	-	2W (Ta)	190mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN2020B-6	6-WDFN Exposed Pad
G75P04FI	Goford Semiconductor	P-40V,-60A,RD(MAX)<7M@-10V,VTH-1 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6275 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	106 nC @ 10 V	6275 pF @ 20 V	±20V	-	89W (Tc)	7mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IPP80N03S4L03AKSA1	Infineon Technologies	MOSFET N-CH 30V 80A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 25 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	80A (Tc)	4.5V, 10V	2.2V @ 90µA	140 nC @ 10 V	9750 pF @ 25 V	±16V	-	136W (Tc)	2.7mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3