Page 1413 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFR3711ZTRLPBF
Infineon Technologies

MOSFET N-CH 20V 93A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,744
64-9145
Infineon Technologies

MOSFET N-CH 20V 27A DIRECTFET

Package: DirectFET? Isometric MX

Stock3,520
AOTF10T60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 10A TO220F

Package: TO-220-3 Full Pack

Stock10,332
HUF76619D3ST
Fairchild/ON Semiconductor

MOSFET N-CH 100V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,928
NDB603AL
Fairchild/ON Semiconductor

MOSFET N-CH 30V 25A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock177,444
IRFBC20
Vishay Siliconix

MOSFET N-CH 600V 2.2A TO-220AB

Package: TO-220-3

Stock99,780
IPI120N10S403AKSA1
Infineon Technologies

MOSFET N-CH TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,104
IXTT100N25P
IXYS

MOSFET N-CH 250V 100A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,088
TSM038N04LCP ROG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,424
DMTH4007LPSQ-13
Diodes Incorporated

MOSFET NCH 40V 15.5A POWERDI

Package: 8-PowerTDFN

Stock7,984
APT42F50B
Microsemi Corporation

MOSFET N-CH 500V 42A TO-247

Package: TO-247-3

Stock5,952
STD15N60M2-EP
STMicroelectronics

MOSFET N-CH 600V 11A EP DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,424
STL18N65M2
STMicroelectronics

MOSFET N-CH 650V 8A POWERFLAT

Package: 8-PowerVDFN

Stock3,536
PSMN1R5-40ES,127
Nexperia USA Inc.

MOSFET N-CH 40V 120A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock41,640
IPW60R099CP
Infineon Technologies

MOSFET N-CH 650V 31A TO-247

Package: TO-247-3

Stock103,980
NTF3055-100T1G
ON Semiconductor

MOSFET N-CH 60V 3A SOT223

Package: TO-261-4, TO-261AA

Stock853,464
STL140N4LLF5
STMicroelectronics

MOSFET N-CH 40V 140A PWRFLAT5X6

Package: 8-PowerVDFN

Stock96,552
PMV15ENEAR
Nexperia USA Inc.

MOSFET N-CH 30V 6.2A TO236AB

Package: -

Stock124,428
RQ5A020ZPTL
Rohm Semiconductor

MOSFET P-CH 12V 2A TSMT3

Package: -

Stock6,750
DMN2991UTQ-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT523 T&R

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFR3711ZTRLPBF	Infineon Technologies	MOSFET N-CH 20V 93A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,744	MOSFET (Metal Oxide)	20V	93A (Tc)	4.5V, 10V	2.45V @ 250µA	27nC @ 4.5V	2160pF @ 10V	±20V	-	79W (Tc)	5.7 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
64-9145	Infineon Technologies	MOSFET N-CH 20V 27A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4130pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 27A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock3,520	MOSFET (Metal Oxide)	20V	27A (Ta), 150A (Tc)	4.5V, 10V	2.45V @ 250µA	42nC @ 4.5V	4130pF @ 10V	±20V	-	2.8W (Ta), 89W (Tc)	2.7 mOhm @ 27A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
AOTF10T60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 10A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1346pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock10,332	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	5V @ 250µA	35nC @ 10V	1346pF @ 100V	±30V	-	43W (Tc)	700 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
HUF76619D3ST	Fairchild/ON Semiconductor	MOSFET N-CH 100V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,928	MOSFET (Metal Oxide)	100V	18A (Tc)	4.5V, 10V	3V @ 250µA	29nC @ 10V	767pF @ 25V	±16V	-	75W (Tc)	85 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
NDB603AL	Fairchild/ON Semiconductor	MOSFET N-CH 30V 25A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock177,444	MOSFET (Metal Oxide)	30V	25A (Tc)	4.5V, 10V	3V @ 250µA	40nC @ 10V	1100pF @ 15V	±20V	-	50W (Tc)	22 mOhm @ 25A, 10V	-65°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFBC20	Vishay Siliconix	MOSFET N-CH 600V 2.2A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock99,780	MOSFET (Metal Oxide)	600V	2.2A (Tc)	10V	4V @ 250µA	18nC @ 10V	350pF @ 25V	±20V	-	50W (Tc)	4.4 Ohm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPI120N10S403AKSA1	Infineon Technologies	MOSFET N-CH TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO263-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,104	MOSFET (Metal Oxide)	100V	120A (Tc)	10V	3.5V @ 180µA	140nC @ 10V	10120pF @ 25V	±20V	-	250W (Tc)	3.9 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO263-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IXTT100N25P	IXYS	MOSFET N-CH 250V 100A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,088	MOSFET (Metal Oxide)	250V	100A (Tc)	10V	5V @ 250µA	185nC @ 10V	6300pF @ 25V	±20V	-	600W (Tc)	24 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TSM038N04LCP ROG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, TRENC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5509pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,424	MOSFET (Metal Oxide)	40V	135A (Tc)	4.5V, 10V	2.5V @ 250µA	104nC @ 10V	5509pF @ 20V	±20V	-	125W (Tc)	3.8 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
DMTH4007LPSQ-13	Diodes Incorporated	MOSFET NCH 40V 15.5A POWERDI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1895pF @ 30V Vgs (Max): - FET Feature: - Power Dissipation (Max): 2.7W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,984	MOSFET (Metal Oxide)	40V	15.5A (Ta), 100A (Tc)	-	3V @ 250µA	29.1nC @ 10V	1895pF @ 30V	-	-	2.7W (Ta), 150W (Tc)	6.5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
APT42F50B	Microsemi Corporation	MOSFET N-CH 500V 42A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6810pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: TO-247-3	Stock5,952	MOSFET (Metal Oxide)	500V	42A (Tc)	10V	5V @ 1mA	170nC @ 10V	6810pF @ 25V	±30V	-	625W (Tc)	130 mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
STD15N60M2-EP	STMicroelectronics	MOSFET N-CH 600V 11A EP DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 378 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,424	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 250µA	17nC @ 10V	590pF @ 100V	±25V	-	110W (Tc)	378 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STL18N65M2	STMicroelectronics	MOSFET N-CH 650V 8A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 764pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 365 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,536	MOSFET (Metal Oxide)	650V	8A (Tc)	10V	4V @ 250µA	21.5nC @ 10V	764pF @ 100V	±25V	-	57W (Tc)	365 mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
PSMN1R5-40ES,127	Nexperia USA Inc.	MOSFET N-CH 40V 120A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9710pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 338W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock41,640	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 1mA	136nC @ 10V	9710pF @ 20V	±20V	-	338W (Tc)	1.6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IPW60R099CP	Infineon Technologies	MOSFET N-CH 650V 31A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock103,980	MOSFET (Metal Oxide)	650V	31A (Tc)	10V	3.5V @ 1.2mA	80nC @ 10V	2800pF @ 100V	±20V	-	255W (Tc)	99 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
NTF3055-100T1G	ON Semiconductor	MOSFET N-CH 60V 3A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 (TO-261) Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock853,464	MOSFET (Metal Oxide)	60V	3A (Ta)	10V	4V @ 250µA	22nC @ 10V	455pF @ 25V	±20V	-	1.3W (Ta)	110 mOhm @ 1.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA
STL140N4LLF5	STMicroelectronics	MOSFET N-CH 40V 140A PWRFLAT5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 25V Vgs (Max): ±22V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 2.75 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock96,552	MOSFET (Metal Oxide)	40V	140A (Tc)	4.5V, 10V	1V @ 250µA	45nC @ 4.5V	5900pF @ 25V	±22V	-	80W (Tc)	2.75 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
PMV15ENEAR	Nexperia USA Inc.	MOSFET N-CH 30V 6.2A TO236AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta), 8.3W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock124,428	MOSFET (Metal Oxide)	30 V	6.2A (Ta)	4.5V, 10V	2.5V @ 250µA	14 nC @ 10 V	440 pF @ 15 V	±20V	-	700mW (Ta), 8.3W (Tc)	20mOhm @ 5.8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
RQ5A020ZPTL	Rohm Semiconductor	MOSFET P-CH 12V 2A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: -	Stock6,750	MOSFET (Metal Oxide)	12 V	2A (Ta)	1.5V, 4.5V	1V @ 1mA	6.5 nC @ 4.5 V	770 pF @ 6 V	±10V	-	700mW (Ta)	105mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
DMN2991UTQ-13	Diodes Incorporated	MOSFET BVDSS: 8V~24V SOT523 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 15 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 280mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	300mA (Ta)	1.5V, 4.5V	1V @ 250µA	0.35 nC @ 4.5 V	21.5 pF @ 15 V	±10V	-	280mW (Ta)	3Ohm @ 100mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
SI2312A-TP	Micro Commercial Co	N-CHANNEL MOSFET,SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5A Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.2W Rds On (Max) @ Id, Vgs: 25mOhm @ 3.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock8,559	MOSFET (Metal Oxide)	20 V	5A	2.5V, 4.5V	900mV @ 250µA	-	865 pF @ 10 V	±8V	-	1.2W	25mOhm @ 3.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
APT10026L2FLLG	Microchip Technology	MOSFET N-CH 1000V 38A 264 MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 260mOhm @ 19A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: 264 MAX™ [L2] Package / Case: TO-264-3, TO-264AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	38A (Tc)	-	5V @ 5mA	267 nC @ 10 V	7114 pF @ 25 V	-	-	-	260mOhm @ 19A, 10V	-	Through Hole	264 MAX™ [L2]	TO-264-3, TO-264AA
IRFF232	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 25W Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	4.5A (Tc)	-	-	-	-	-	-	25W	-	-	Through Hole	TO-205AF (TO-39)	TO-205AF Metal Can
N0301N-T1-AT	Renesas Electronics Corporation	N-CHANNEL MOS FIELD EFFECT TRANS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
V50382-E3	Vishay Siliconix	MOSFET N-CH 60V TO-247AC FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BUK6D120-40EX	Nexperia USA Inc.	MOSFET N-CH 40V 2.9A/5.7A 6DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 5.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 113 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 7.5W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Stock43,434	MOSFET (Metal Oxide)	40 V	2.9A (Ta), 5.7A (Tc)	4.5V, 10V	2.5V @ 250µA	3.6 nC @ 10 V	113 pF @ 20 V	±20V	-	2W (Ta), 7.5W (Tc)	120mOhm @ 2.9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad
SIHP21N80AEF-GE3	Vishay Siliconix	E SERIES POWER MOSFET WITH FAST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 16.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock2,955	MOSFET (Metal Oxide)	800 V	16.3A (Tc)	10V	4V @ 250µA	71 nC @ 10 V	1511 pF @ 100 V	±30V	-	179W (Tc)	250mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
DMT43M8LFV-13	Diodes Incorporated	MOSFET N-CH 40V 87A POWERDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3213 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.25W (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 (Type UX) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	87A (Tc)	4.5V, 10V	2.5V @ 250µA	44.4 nC @ 10 V	3213 pF @ 20 V	±20V	-	2.25W (Ta)	4mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8 (Type UX)	8-PowerVDFN