Page 1414 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLR7821CTRRPBF
Infineon Technologies

MOSFET N-CH 30V 65A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,832
IRL3715ZSTRR
Infineon Technologies

MOSFET N-CH 20V 50A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,520
TPC8111(TE12L,Q,M)
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 11A SOP8 2-6J1B

Package: 8-SOIC (0.173", 4.40mm Width)

Stock2,384
SIB417DK-T1-GE3
Vishay Siliconix

MOSFET P-CH 8V 9A SC75-6

Package: PowerPAK? SC-75-6L

Stock3,984
SI3454ADV-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 3.4A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock547,992
STP30NM50N
STMicroelectronics

MOSFET N-CH 500V 27A TO-220

Package: TO-220-3

Stock2,752
IPT65R105G7XTMA1
Infineon Technologies

HIGH POWER_NEW

Package: -

Stock3,248
BSL202SNH6327XTSA1
Infineon Technologies

MOSFET N-CH 20V 7.5A 6TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock3,344
NTMFD4952NFT3G
ON Semiconductor

MOSFET N-CH 30V 10.8A SO8FL

Package: 8-PowerTDFN

Stock3,280
AOTF2918L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 58A TO220F

Package: TO-220-3 Full Pack

Stock218,664
NTMFS4C027NT3G
ON Semiconductor

MOSFET N-CH 30V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock3,488
DMS3012SFG-7
Diodes Incorporated

MOSFET N-CH 30V 12A PWRDI3333-8

Package: 8-PowerWDFN

Stock3,584
FDN028N20
Fairchild/ON Semiconductor

PT8 20/12V NCH POWERTRENCH MOSFE

Package: TO-236-3, SC-59, SOT-23-3

Stock2,128
ZXMP3A16N8TA
Diodes Incorporated

MOSFET P-CH 30V 5.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock177,360
SQJ469EP-T1_GE3
Vishay Siliconix

MOSFET P-CH 80V 32A PPAK SO-8

Package: PowerPAK? SO-8

Stock4,432
FDMS8570S
Fairchild/ON Semiconductor

MOSFET N-CH 25V 24A 8-PQFN

Package: 8-PowerTDFN

Stock16,656
BUK7604-40A,118
Nexperia USA Inc.

MOSFET N-CH 40V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock28,080
SUP90142E-GE3
Vishay Siliconix

MOSFET N-CH 200V 90A TO220AB

Package: TO-220-3

Stock10,272
STP220N6F7
STMicroelectronics

MOSFET N-CH 60V 120A TO-220

Package: TO-220-3

Stock19,920
IPP60R190C6
Infineon Technologies

MOSFET N-CH 600V 20.2A TO220

Package: TO-220-3

Stock200,988

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLR7821CTRRPBF	Infineon Technologies	MOSFET N-CH 30V 65A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,832	MOSFET (Metal Oxide)	30V	65A (Tc)	4.5V, 10V	1V @ 250µA	14nC @ 4.5V	1030pF @ 15V	±20V	-	75W (Tc)	10 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL3715ZSTRR	Infineon Technologies	MOSFET N-CH 20V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,520	MOSFET (Metal Oxide)	20V	50A (Tc)	4.5V, 10V	2.55V @ 250µA	11nC @ 4.5V	870pF @ 10V	±20V	-	45W (Tc)	11 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TPC8111(TE12L,Q,M)	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 11A SOP8 2-6J1B FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5710pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	Package: 8-SOIC (0.173", 4.40mm Width)	Stock2,384	MOSFET (Metal Oxide)	30V	11A (Ta)	4V, 10V	2V @ 1mA	107nC @ 10V	5710pF @ 10V	±20V	-	1W (Ta)	12 mOhm @ 5.5A, 10V	150°C (TJ)	Surface Mount	8-SOP (5.5x6.0)	8-SOIC (0.173", 4.40mm Width)
SIB417DK-T1-GE3	Vishay Siliconix	MOSFET P-CH 8V 9A SC75-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.75nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 4V Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 5.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-75-6L Single Package / Case: PowerPAK? SC-75-6L	Package: PowerPAK? SC-75-6L	Stock3,984	MOSFET (Metal Oxide)	8V	9A (Tc)	1.2V, 4.5V	1V @ 250µA	12.75nC @ 5V	675pF @ 4V	±5V	-	2.4W (Ta), 13W (Tc)	52 mOhm @ 5.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-75-6L Single	PowerPAK? SC-75-6L
SI3454ADV-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 3.4A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.14W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock547,992	MOSFET (Metal Oxide)	30V	3.4A (Ta)	4.5V, 10V	3V @ 250µA	15nC @ 10V	-	±20V	-	1.14W (Ta)	60 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
STP30NM50N	STMicroelectronics	MOSFET N-CH 500V 27A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 115 mOhm @ 13.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock2,752	MOSFET (Metal Oxide)	500V	27A (Tc)	10V	4V @ 250µA	94nC @ 10V	2740pF @ 50V	±25V	-	190W (Tc)	115 mOhm @ 13.5A, 10V	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IPT65R105G7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,248	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSL202SNH6327XTSA1	Infineon Technologies	MOSFET N-CH 20V 7.5A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1147pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSOP6-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock3,344	MOSFET (Metal Oxide)	20V	7.5A (Ta)	2.5V, 4.5V	1.2V @ 30µA	8.7nC @ 10V	1147pF @ 10V	±12V	-	2W (Ta)	22 mOhm @ 7.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSOP6-6	SOT-23-6 Thin, TSOT-23-6
NTMFD4952NFT3G	ON Semiconductor	MOSFET N-CH 30V 10.8A SO8FL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,280	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	8-PowerTDFN
AOTF2918L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 58A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock218,664	MOSFET (Metal Oxide)	100V	13A (Ta), 58A (Tc)	10V	3.9V @ 250µA	53nC @ 10V	3430pF @ 50V	±20V	-	2.1W (Ta), 41W (Tc)	7 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
NTMFS4C027NT3G	ON Semiconductor	MOSFET N-CH 30V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock3,488	MOSFET (Metal Oxide)	30V	16.4A (Ta), 52A (Tc)	4.5V, 10V	2.1V @ 250µA	18.2nC @ 10V	1670pF @ 15V	±20V	-	2.51W (Ta), 25.5W (Tc)	4.8 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
DMS3012SFG-7	Diodes Incorporated	MOSFET N-CH 30V 12A PWRDI3333-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4310pF @ 15V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 890mW (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,584	MOSFET (Metal Oxide)	30V	12A (Ta)	4.5V, 10V	2.5V @ 250µA	14.7nC @ 10V	4310pF @ 15V	±20V	Schottky Diode (Body)	890mW (Ta)	10 mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerWDFN
FDN028N20	Fairchild/ON Semiconductor	PT8 20/12V NCH POWERTRENCH MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,128	MOSFET (Metal Oxide)	20V	6.1A (Tc)	2.5V, 4.5V	1.5V @ 250µA	6nC @ 4.5V	600pF @ 10V	±12V	-	1.5W (Tc)	28 mOhm @ 5.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
ZXMP3A16N8TA	Diodes Incorporated	MOSFET P-CH 30V 5.6A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1022pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock177,360	MOSFET (Metal Oxide)	30V	5.6A (Ta)	4.5V, 10V	1V @ 250µA	29.6nC @ 10V	1022pF @ 15V	±20V	-	1.9W (Ta)	40 mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SQJ469EP-T1_GE3	Vishay Siliconix	MOSFET P-CH 80V 32A PPAK SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 10.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock4,432	MOSFET (Metal Oxide)	80V	32A (Tc)	6V, 10V	2.5V @ 250µA	155nC @ 10V	5100pF @ 40V	±20V	-	100W (Tc)	25 mOhm @ 10.2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
FDMS8570S	Fairchild/ON Semiconductor	MOSFET N-CH 25V 24A 8-PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 425nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2825pF @ 13V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock16,656	MOSFET (Metal Oxide)	25V	24A (Ta), 60A (Tc)	4.5V, 10V	2.2V @ 1mA	425nC @ 10V	2825pF @ 13V	±12V	-	2.5W (Ta), 48W (Tc)	2.8 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
BUK7604-40A,118	Nexperia USA Inc.	MOSFET N-CH 40V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5730pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock28,080	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 1mA	117nC @ 10V	5730pF @ 25V	±20V	-	300W (Tc)	4.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUP90142E-GE3	Vishay Siliconix	MOSFET N-CH 200V 90A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 31200pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 15.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock10,272	MOSFET (Metal Oxide)	200V	90A (Tc)	7.5V, 10V	4V @ 250µA	87nC @ 10V	31200pF @ 100V	±20V	-	375W (Tc)	15.2 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP220N6F7	STMicroelectronics	MOSFET N-CH 60V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 237W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock19,920	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 250µA	100nC @ 10V	6400pF @ 25V	±20V	-	237W (Tc)	2 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
IPP60R190C6	Infineon Technologies	MOSFET N-CH 600V 20.2A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock200,988	MOSFET (Metal Oxide)	600V	20.2A (Tc)	10V	3.5V @ 630µA	63nC @ 10V	1400pF @ 100V	±20V	-	151W (Tc)	190 mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
R6011KND3TL1	Rohm Semiconductor	MOSFET N-CH 600V 11A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 124W (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,410	MOSFET (Metal Oxide)	600 V	11A (Tc)	10V	5V @ 1mA	22 nC @ 10 V	740 pF @ 25 V	±20V	-	124W (Tc)	390mOhm @ 3.8A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHK105N60E-T1-GE3	Vishay Siliconix	E SERIES POWER MOSFET WITH FAST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2301 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 142W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK®10 x 12 Package / Case: 8-PowerBSFN	Package: -	Stock6,150	MOSFET (Metal Oxide)	600 V	24A (Tc)	10V	5V @ 250µA	51 nC @ 10 V	2301 pF @ 100 V	±30V	-	142W (Tc)	105mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK®10 x 12	8-PowerBSFN
AOI600A60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 8A TO251A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPAK	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	8A (Tc)	10V	3.5V @ 250µA	11.5 nC @ 10 V	608 pF @ 100 V	±20V	-	96W (Tc)	600mOhm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251A	TO-251-3 Stub Leads, IPAK
SIHG085N60EF-GE3	Vishay Siliconix	EF SERIES POWER MOSFET WITH FAST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2733 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 184W (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: -	Stock2,970	MOSFET (Metal Oxide)	600 V	34A (Tc)	10V	5V @ 250µA	63 nC @ 10 V	2733 pF @ 100 V	±30V	-	184W (Tc)	84mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
TSM085P03CS	Taiwan Semiconductor Corporation	-30, -34, SINGLE P-CHANNEL FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3216 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 14W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	34A (Tc)	4.5V, 10V	2.5V @ 250µA	56 nC @ 10 V	3216 pF @ 15 V	±20V	-	14W (Tc)	8.5mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
NTB082N65S3F	onsemi	MOSFET N-CH 650V 40A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	40A (Tc)	10V	5V @ 4mA	81 nC @ 10 V	3410 pF @ 400 V	±30V	-	313W (Tc)	82mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SSI7N60BTU	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 (I2PAK) Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	7A (Tc)	10V	4V @ 250µA	50 nC @ 10 V	1800 pF @ 25 V	±30V	-	3.13W (Ta), 147W (Tc)	1.2Ohm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262 (I2PAK)	TO-262-3 Long Leads, I2PAK, TO-262AA
IPP019N08NF2SAKMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 191A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 194µA Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Stock3,000	MOSFET (Metal Oxide)	80 V	32A (Ta), 191A (Tc)	6V, 10V	3.8V @ 194µA	186 nC @ 10 V	8700 pF @ 40 V	±20V	-	3.8W (Ta), 250W (Tc)	1.9mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3