Page 1415 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFR13N20DCTRLP
Infineon Technologies

MOSFET N-CH 200V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,808
APT23F60S
Microsemi Corporation

MOSFET N-CH 600V 23A D3PAK

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock5,008
SI7402DN-T1-E3
Vishay Siliconix

MOSFET N-CH 12V 13A PPAK 1212-8

Package: PowerPAK? 1212-8

Stock99,000
CSD25303W1015
Texas Instruments

MOSFET P-CH 20V 3A 6DSBGA

Package: 6-UFBGA, DSBGA

Stock36,000
NTB5426NT4G
ON Semiconductor

MOSFET N-CH 60V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock12,936
IXTH220N055T
IXYS

MOSFET N-CH 55V 220A TO-247

Package: TO-247-3

Stock5,488
ZXMN6A25K
Diodes Incorporated

MOSFET N-CH 60V 7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock38,208
FQU3N60TU
Fairchild/ON Semiconductor

MOSFET N-CH 600V 2.4A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock40,800
IRF820
Vishay Siliconix

MOSFET N-CH 500V 2.5A TO-220AB

Package: TO-220-3

Stock286,812
IRF300P226
Infineon Technologies

MOSFET IFX OPTIMOS TO247

Package: -

Stock7,104
IXFE23N100
IXYS

MOSFET N-CH 1000V 21A ISOPLUS227

Package: SOT-227-4, miniBLOC

Stock3,440
NVB5860NLT4G
ON Semiconductor

MOSFET N-CH 60V 169A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,000
NDD60N745U1-1G
ON Semiconductor

MOSFET N-CH 600V 6.8A IPAK-4

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,232
AOTF9N70
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 9A TO220F

Package: TO-220-3 Full Pack

Stock52,428
NVD3055-094T4G-VF01
ON Semiconductor

MOSFET N-CH 60V 9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,592
IRFR024PBF
Vishay Siliconix

MOSFET N-CH 60V 14A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock28,812
CSD13201W10
Texas Instruments

MOSFET N-CH 12V 1.6A 4DSBGA

Package: 4-UFBGA, DSBGA

Stock712,938
PMV45EN2R
Nexperia USA Inc.

MOSFET N-CH 30V SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock354,420
NTH4L022N120M3S
onsemi

SIC MOS TO247-4L 22MOHM 1200V

Package: -

Request a Quote
MCAC28P06Y-TP
Micro Commercial Co

P-CHANNEL MOSFET, DFN5060

Package: -

Stock18,696

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFR13N20DCTRLP	Infineon Technologies	MOSFET N-CH 200V 13A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,808	MOSFET (Metal Oxide)	200V	13A (Tc)	10V	5.5V @ 250µA	38nC @ 10V	830pF @ 25V	±30V	-	110W (Tc)	235 mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
APT23F60S	Microsemi Corporation	MOSFET N-CH 600V 23A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4415pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 415W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock5,008	MOSFET (Metal Oxide)	600V	24A (Tc)	10V	5V @ 1mA	110nC @ 10V	4415pF @ 25V	±30V	-	415W (Tc)	290 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3Pak	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
SI7402DN-T1-E3	Vishay Siliconix	MOSFET N-CH 12V 13A PPAK 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock99,000	MOSFET (Metal Oxide)	12V	13A (Ta)	1.8V, 4.5V	850mV @ 250µA	55nC @ 4.5V	-	±8V	-	1.5W (Ta)	5.7 mOhm @ 20A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
CSD25303W1015	Texas Instruments	MOSFET P-CH 20V 3A 6DSBGA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 58 mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DSBGA (1x1.5) Package / Case: 6-UFBGA, DSBGA	Package: 6-UFBGA, DSBGA	Stock36,000	MOSFET (Metal Oxide)	20V	3A (Tc)	1.8V, 4.5V	1V @ 250µA	4.3nC @ 4.5V	435pF @ 10V	±8V	-	1.5W (Ta)	58 mOhm @ 1.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-DSBGA (1x1.5)	6-UFBGA, DSBGA
NTB5426NT4G	ON Semiconductor	MOSFET N-CH 60V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 215W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock12,936	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 250µA	170nC @ 10V	5800pF @ 25V	±20V	-	215W (Tc)	6 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTH220N055T	IXYS	MOSFET N-CH 55V 220A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 430W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock5,488	MOSFET (Metal Oxide)	55V	220A (Tc)	10V	4V @ 250µA	158nC @ 10V	7200pF @ 25V	±20V	-	430W (Tc)	4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
ZXMN6A25K	Diodes Incorporated	MOSFET N-CH 60V 7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.11W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock38,208	MOSFET (Metal Oxide)	60V	7A (Ta)	4.5V, 10V	3V @ 250µA	20.4nC @ 10V	1063pF @ 30V	±20V	-	2.11W (Ta)	50 mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
FQU3N60TU	Fairchild/ON Semiconductor	MOSFET N-CH 600V 2.4A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock40,800	MOSFET (Metal Oxide)	600V	2.4A (Tc)	10V	5V @ 250µA	13nC @ 10V	450pF @ 25V	±30V	-	2.5W (Ta), 50W (Tc)	3.6 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRF820	Vishay Siliconix	MOSFET N-CH 500V 2.5A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock286,812	MOSFET (Metal Oxide)	500V	2.5A (Tc)	10V	4V @ 250µA	24nC @ 10V	360pF @ 25V	±20V	-	50W (Tc)	3 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF300P226	Infineon Technologies	MOSFET IFX OPTIMOS TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,104	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFE23N100	IXYS	MOSFET N-CH 1000V 21A ISOPLUS227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 21A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 430 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,440	MOSFET (Metal Oxide)	1000V	21A	10V	5V @ 8mA	250nC @ 10V	7000pF @ 25V	±20V	-	500W (Tc)	430 mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
NVB5860NLT4G	ON Semiconductor	MOSFET N-CH 60V 169A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 220A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13216pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 283W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-3 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,000	MOSFET (Metal Oxide)	60V	220A (Ta)	4.5V, 10V	3V @ 250µA	220nC @ 10V	13216pF @ 25V	±20V	-	283W (Tc)	3 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-3	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NDD60N745U1-1G	ON Semiconductor	MOSFET N-CH 600V 6.8A IPAK-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 84W (Tc) Rds On (Max) @ Id, Vgs: 745 mOhm @ 3.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,232	MOSFET (Metal Oxide)	600V	6.6A (Tc)	10V	4V @ 250µA	15nC @ 10V	440pF @ 50V	±25V	-	84W (Tc)	745 mOhm @ 3.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
AOTF9N70	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 700V 9A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock52,428	MOSFET (Metal Oxide)	700V	9A (Tc)	10V	4.5V @ 250µA	35nC @ 10V	1630pF @ 25V	±30V	-	50W (Tc)	1.2 Ohm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
NVD3055-094T4G-VF01	ON Semiconductor	MOSFET N-CH 60V 9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Rds On (Max) @ Id, Vgs: 94 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,592	MOSFET (Metal Oxide)	60V	12A (Ta)	10V	4V @ 250µA	20nC @ 10V	450pF @ 25V	±20V	-	1.5W (Ta), 48W (Tj)	94 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR024PBF	Vishay Siliconix	MOSFET N-CH 60V 14A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock28,812	MOSFET (Metal Oxide)	60V	14A (Tc)	10V	4V @ 250µA	25nC @ 10V	640pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	100 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
CSD13201W10	Texas Instruments	MOSFET N-CH 12V 1.6A 4DSBGA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 462pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 34 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-DSBGA (1x1) Package / Case: 4-UFBGA, DSBGA	Package: 4-UFBGA, DSBGA	Stock712,938	MOSFET (Metal Oxide)	12V	1.6A (Ta)	1.8V, 4.5V	1.1V @ 250µA	2.9nC @ 4.5V	462pF @ 6V	±8V	-	1.2W (Ta)	34 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-DSBGA (1x1)	4-UFBGA, DSBGA
PMV45EN2R	Nexperia USA Inc.	MOSFET N-CH 30V SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 209pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 510mW (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock354,420	MOSFET (Metal Oxide)	30V	4.1A (Ta)	4.5V, 10V	2V @ 250µA	6.3nC @ 10V	209pF @ 15V	±20V	-	510mW (Ta), 5W (Tc)	42 mOhm @ 4.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
NTH4L022N120M3S	onsemi	SIC MOS TO247-4L 22MOHM 1200V FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4.4V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V Vgs (Max): +22V, -10V FET Feature: - Power Dissipation (Max): 352W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	68A (Tc)	18V	4.4V @ 20mA	151 nC @ 18 V	3175 pF @ 800 V	+22V, -10V	-	352W (Tc)	30mOhm @ 40A, 18V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
MCAC28P06Y-TP	Micro Commercial Co	P-CHANNEL MOSFET, DFN5060 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 28A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Stock18,696	MOSFET (Metal Oxide)	60 V	28A	-	2.7V @ 250µA	19.3 nC @ 10 V	1050 pF @ 30 V	±20V	-	60W	40mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
TSM16ND50CI-C0G	Taiwan Semiconductor Corporation	MOSFET N-CH 500V 16A ITO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2551 pF @ 50 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 59.5W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	16A (Tc)	10V	4.5V @ 250µA	53 nC @ 10 V	2551 pF @ 50 V	±30V	-	59.5W (Tc)	350mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220	TO-220-3 Full Pack, Isolated Tab
PJMH074N60FRCH_T0_00601	Panjit International Inc.	600V/ 74M / 53A/ FAST RECOVERY Q FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 53A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: -	Stock4,500	MOSFET (Metal Oxide)	600 V	53A	10V	-	84 nC @ 10 V	-	±30V	-	-	-	-	Through Hole	TO-247AD	TO-247-3
BUK6D20-40EX	Nexperia USA Inc.	BUK6D20-40E/SOT1220/SOT1220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Stock8,700	MOSFET (Metal Oxide)	40 V	8A (Ta), 19A (Tc)	4.5V, 10V	2.7V @ 250µA	19 nC @ 10 V	582 pF @ 20 V	±20V	-	2.3W (Ta), 15W (Tc)	20mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad
IRFR210TRPBF-BE3	Vishay Siliconix	MOSFET N-CH 200V 2.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock23,655	MOSFET (Metal Oxide)	200 V	2.6A (Tc)	-	4V @ 250µA	8.2 nC @ 10 V	140 pF @ 25 V	±20V	-	2.5W (Ta), 25W (Tc)	1.5Ohm @ 1.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
2SK3278-E	Sanyo	2SK3278 - N-CHANNEL SILICON MOSF FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RRL025P03FRATR	Rohm Semiconductor	MOSFET P-CH 30V 2.5A TUMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT6 Package / Case: 6-SMD, Flat Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	2.5A (Ta)	4V, 10V	2.5V @ 1mA	12 nC @ 10 V	480 pF @ 10 V	±20V	-	1W (Ta)	75mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	TUMT6	6-SMD, Flat Leads
BSS110	onsemi	MOSFET P-CH 50V 170MA TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 10Ohm @ 170mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	170mA (Ta)	-	2V @ 1mA	-	40 pF @ 25 V	-	-	-	10Ohm @ 170mA, 10V	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
SIR572DP-T1-RE3	Vishay Siliconix	N-CHANNEL 150 V (D-S) MOSFET POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 59.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2733 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.7W (Ta), 92.5W (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock17,688	MOSFET (Metal Oxide)	150 V	14.8A (Ta), 59.7A (Tc)	7.5V, 10V	4V @ 250µA	54 nC @ 10 V	2733 pF @ 75 V	±20V	-	5.7W (Ta), 92.5W (Tc)	10.8mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8