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Infineon Technologies |
MOSFET N-CH 30V 62A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 87W (Tc)
- Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,320 |
|
MOSFET (Metal Oxide) | 30V | 62A (Tc) | 4.5V, 10V | 3V @ 250µA | 19nC @ 4.5V | 1990pF @ 15V | ±20V | - | 87W (Tc) | 12.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 35A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 83µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 44 mOhm @ 26.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,072 |
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MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 4V @ 83µA | 65nC @ 10V | 1570pF @ 25V | ±20V | - | 150W (Tc) | 44 mOhm @ 26.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 94µA
- Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock5,104 |
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MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 4.5V, 10V | 2.3V @ 94µA | 6.6nC @ 10V | 150pF @ 25V | ±20V | - | 1.8W (Ta) | 45 Ohm @ 120mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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|
Infineon Technologies |
MOSFET N-CH 30V 12A 8DSO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3620pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta)
- Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-DSO-8
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock172,860 |
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MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 2V @ 50µA | 28nC @ 5V | 3620pF @ 15V | ±20V | - | 1.56W (Ta) | 6.4 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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|
Infineon Technologies |
MOSFET N-CH 80V 6.3A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 3.8A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,400 |
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MOSFET (Metal Oxide) | 80V | 6.3A (Ta) | 10V | 4V @ 250µA | 57nC @ 10V | 1680pF @ 25V | ±20V | - | 2.5W (Ta) | 29 mOhm @ 3.8A, 10V | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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|
Infineon Technologies |
MOSFET N-CH 55V 44A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 26A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,088 |
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MOSFET (Metal Oxide) | 55V | 44A (Tc) | 10V | 4V @ 250µA | 65nC @ 10V | 1300pF @ 25V | ±20V | - | 107W (Tc) | 27 mOhm @ 26A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 75V 100A SMP-FD
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock6,880 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Nexperia USA Inc. |
MOSFET P-CH 20V 3.6A 6TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 24pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 510mW (Ta)
- Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.6A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
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Package: SC-74, SOT-457 |
Stock198,600 |
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MOSFET (Metal Oxide) | 20V | 3.6A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 15.7nC @ 10V | 24pF @ 10V | ±8V | - | 510mW (Ta) | 66 mOhm @ 3.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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Vishay Siliconix |
MOSFET P-CH 40V 8.7A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 10.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,216 |
|
MOSFET (Metal Oxide) | 40V | 8.7A (Ta) | 4.5V, 10V | 1V @ 250µA (Min) | 50nC @ 5V | - | ±20V | - | 1.5W (Ta) | 15.5 mOhm @ 10.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 20V 3.7A SOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,208 |
|
MOSFET (Metal Oxide) | 20V | 3.7A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 19nC @ 4.5V | 1020pF @ 10V | ±8V | - | 750mW (Ta) | 39 mOhm @ 4.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 30V 8.6A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock6,688 |
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MOSFET (Metal Oxide) | 30V | 9A (Ta), 54A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 12nC @ 4.5V | 1225pF @ 12V | ±20V | - | 1.28W (Ta), 50W (Tc) | 10 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2942pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 250mW (Tc)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: SUPER-247 (TO-274AA)
- Package / Case: TO-274AA
|
Package: TO-274AA |
Stock4,720 |
|
MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 5V @ 250µA | 76nC @ 10V | 2942pF @ 25V | ±30V | - | 250mW (Tc) | 270 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247 (TO-274AA) | TO-274AA |
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IXYS |
MOSFET P-CH 150V 10A TO-252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 350 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,200 |
|
MOSFET (Metal Oxide) | 150V | 10A (Tc) | 10V | 4.5V @ 250µA | 36nC @ 10V | 2210pF @ 25V | ±15V | - | 83W (Tc) | 350 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET N-CH 50V 1.2A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,192 |
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MOSFET (Metal Oxide) | 50V | 1.2A (Tj) | 4.5V, 10V | 2.4V @ 10mA | - | 300pF @ 25V | ±20V | - | 1W (Tc) | 300 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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ON Semiconductor |
MOSFET N-CH 60V 20A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
- Rds On (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,584 |
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MOSFET (Metal Oxide) | 60V | 20A (Ta) | 10V | 4V @ 250µA | 30nC @ 10V | 1015pF @ 25V | ±20V | - | 1.88W (Ta), 60W (Tj) | 46 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 20V 7.9A 6DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 907pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 660mW (Ta)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
|
Package: 6-UDFN Exposed Pad |
Stock5,968 |
|
MOSFET (Metal Oxide) | 20V | 7.9A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 18nC @ 8V | 907pF @ 10V | ±8V | - | 660mW (Ta) | 22 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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|
IXYS |
MOSFET N-CH 250V 50A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock6,608 |
|
MOSFET (Metal Oxide) | 250V | 50A (Tc) | 10V | 5V @ 1mA | 78nC @ 10V | 4000pF @ 25V | ±30V | - | 400W (Tc) | 50 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
STMicroelectronics |
MOSFET N-CH 600V 10A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 50V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Rds On (Max) @ Id, Vgs: 550 mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock23,508 |
|
MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 540pF @ 50V | ±25V | - | 70W (Tc) | 550 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 22A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 27W (Tc)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock128,904 |
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MOSFET (Metal Oxide) | 100V | 22A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 15nC @ 10V | 1190pF @ 50V | ±20V | - | 2.1W (Ta), 27W (Tc) | 24 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 30V 91A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 91A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 930mW (Ta), 48W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 30A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock16,482 |
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MOSFET (Metal Oxide) | 30V | 12.7A (Ta), 91A (Tc) | 4.5V, 10V | 2V @ 250µA | 22nC @ 4.5V | 4850pF @ 15V | ±20V | - | 930mW (Ta), 48W (Tc) | 3.3 mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET P-CH 150V 13A TO-220AB
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock54,828 |
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MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | ±20V | - | 110W (Tc) | 290 mOhm @ 6.6A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 100V 43A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 106W (Tc)
- Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock215,286 |
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MOSFET (Metal Oxide) | 100V | 43A (Tc) | 10V | 4V @ 1mA | 41nC @ 10V | 2210pF @ 50V | ±20V | - | 106W (Tc) | 20.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 14A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 14A (Tj) | 10V | 3.6V @ 250µA | 23.5 nC @ 10 V | 1350 pF @ 100 V | ±20V | - | 30W (Tc) | 280mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 100V 18.8A/81A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
- Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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Package: - |
Stock16,215 |
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MOSFET (Metal Oxide) | 100 V | 18.8A (Ta), 81A (Tc) | 4.5V, 10V | 3V @ 250µA | 110 nC @ 10 V | 4870 pF @ 50 V | ±20V | - | 5.4W (Ta), 100W (Tc) | 6.1mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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onsemi |
NCH 2.5V DRIVE SERIES
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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onsemi |
MOSFET N-CH 60V 11A TO252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 135W (Tc)
- Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 11A (Ta) | 10V | 4V @ 250µA | 37 nC @ 10 V | 1840 pF @ 25 V | ±20V | - | 135W (Tc) | 10.5mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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onsemi |
MOSFET N-CH 600V 1.9A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
- Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 1.9A (Tc) | 10V | 4V @ 250µA | 12 nC @ 10 V | 235 pF @ 25 V | ±30V | - | 2.5W (Ta), 44W (Tc) | 4.7Ohm @ 950mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI33
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 80 V | 27A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 10.4 nC @ 10 V | 631 pF @ 40 V | ±20V | - | 1.5W (Ta) | 25mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |