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Infineon Technologies |
MOSFET N-CH 25V 25A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5305pF @ 13V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,496 |
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MOSFET (Metal Oxide) | 25V | 25A (Ta) | 4.5V, 10V | 2.35V @ 100µA | 53nC @ 4.5V | 5305pF @ 13V | ±20V | - | 2.5W (Ta) | 2.7 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 103A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 333W (Tc)
- Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 62A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,736 |
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MOSFET (Metal Oxide) | 100V | 103A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 5380pF @ 25V | ±20V | - | 333W (Tc) | 11.6 mOhm @ 62A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 62A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 330W (Tc)
- Rds On (Max) @ Id, Vgs: 26 mOhm @ 46A, 10V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock6,736 |
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MOSFET (Metal Oxide) | 200V | 62A (Tc) | 10V | 5V @ 250µA | 98nC @ 10V | 4600pF @ 25V | ±30V | - | 330W (Tc) | 26 mOhm @ 46A, 10V | -40°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 5.2A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 46 mOhm @ 5.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock41,040 |
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MOSFET (Metal Oxide) | 100V | 5.2A (Ta) | 6V, 10V | 4V @ 250µA | 53nC @ 10V | 1735pF @ 50V | ±20V | - | 2.5W (Ta) | 46 mOhm @ 5.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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IXYS |
MOSFET N-CH 75V 250A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 550W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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Package: TO-3P-3, SC-65-3 |
Stock4,160 |
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MOSFET (Metal Oxide) | 75V | 250A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 9900pF @ 25V | ±20V | - | 550W (Tc) | 4 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 55V 19A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 55W (Tc)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 19A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock13,596 |
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MOSFET (Metal Oxide) | 55V | 19A (Tc) | 10V | 4V @ 250µA | 24nC @ 20V | 350pF @ 25V | ±20V | - | 55W (Tc) | 70 mOhm @ 19A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 30V 10A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 10V
- Vgs (Max): 20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,106,628 |
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MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4V, 10V | 2.5V @ 1mA | 14nC @ 5V | 1070pF @ 10V | 20V | - | 2W (Ta) | 13 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 500V 14A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock6,144 |
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MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 5V @ 250µA | 12nC @ 10V | 1000pF @ 25V | ±30V | - | 160W (Tc) | 400 mOhm @ 6A, 10V | -65°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 75V 87A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 143W (Tc)
- Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 52A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock970,368 |
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MOSFET (Metal Oxide) | 75V | 87A (Tc) | 6V, 10V | 3.7V @ 100µA | 122nC @ 10V | 4650pF @ 25V | ±20V | - | 143W (Tc) | 7.3 mOhm @ 52A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3-1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock6,000 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4V @ 35µA | 43nC @ 10V | 3440pF @ 25V | ±20V | - | 71W (Tc) | 4.6 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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IXYS |
MOSFET P-CH 500V 11A TO-268
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
|
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock3,056 |
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MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 5V @ 250µA | 130nC @ 10V | 4700pF @ 25V | ±20V | - | 300W (Tc) | 750 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 500V 14A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 265 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock2,448 |
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MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 5V @ 4mA | 42nC @ 10V | 2220pF @ 25V | ±30V | - | 180W (Tc) | 265 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 32A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 72 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock2,368 |
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MOSFET (Metal Oxide) | 200V | 32A (Tc) | 10V | 4.5V @ 250µA | 38nC @ 10V | 1760pF @ 25V | ±20V | - | 200W (Tc) | 72 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET PCH 40V 10.3A POWERDI
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3426pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock5,296 |
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MOSFET (Metal Oxide) | 40V | 10.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 68.6nC @ 10V | 3426pF @ 20V | ±20V | - | 1W (Ta) | 13 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 650V 11A TO-220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 340 mOhm @ 5.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock8,844 |
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MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 5V @ 250µA | 22nC @ 10V | 816pF @ 100V | ±25V | - | 30W (Tc) | 340 mOhm @ 5.5A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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|
Infineon Technologies |
MOSFET N-CH 700V 12.8A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 211pF @ 400V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 30.5W (Tc)
- Rds On (Max) @ Id, Vgs: 900 mOhm @ 1.1A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,456 |
|
MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 3.5V @ 60µA | 6.8nC @ 10V | 211pF @ 400V | ±16V | - | 30.5W (Tc) | 900 mOhm @ 1.1A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 250V 51A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 25.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: SC-83
|
Package: SC-83 |
Stock14,316 |
|
MOSFET (Metal Oxide) | 250V | 51A (Tc) | 10V | 5V @ 1mA | 120nC @ 10V | 7000pF @ 25V | ±30V | - | 1.56W (Ta), 40W (Tc) | 65 mOhm @ 25.5A, 10V | 150°C (TJ) | Surface Mount | LPTS | SC-83 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 1.4A ES6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 137pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 251 mOhm @ 650mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ES6 (1.6x1.6)
- Package / Case: SOT-563, SOT-666
|
Package: SOT-563, SOT-666 |
Stock3,104 |
|
MOSFET (Metal Oxide) | 30V | 1.4A (Ta) | 4V, 10V | 2.6V @ 1mA | - | 137pF @ 15V | ±20V | - | 500mW (Ta) | 251 mOhm @ 650mA, 10V | 150°C (TJ) | Surface Mount | ES6 (1.6x1.6) | SOT-563, SOT-666 |
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Rohm Semiconductor |
MOSFET N-CH 30V 18A 8-HSMT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 18A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
|
Package: 8-PowerVDFN |
Stock7,424 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 22.4nC @ 10V | 1520pF @ 15V | ±20V | - | 2W (Ta) | 4.3 mOhm @ 18A, 10V | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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|
Diodes Incorporated |
MOSFET N-CH 20V 2A SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 188pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta)
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,176 |
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MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 2.3nC @ 10V | 188pF @ 10V | ±12V | - | 600mW (Ta) | 110 mOhm @ 2.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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IXYS |
MOSFET P-CH 200V 48A TO-268
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 462W (Tc)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock8,220 |
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MOSFET (Metal Oxide) | 200V | 48A (Tc) | 10V | 4.5V @ 250µA | 103nC @ 10V | 5400pF @ 25V | ±20V | - | 462W (Tc) | 85 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO220-FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 630µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock19,848 |
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MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 3.5V @ 630µA | 63nC @ 10V | 1400pF @ 100V | ±20V | - | 34W (Tc) | 190 mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-FP | TO-220-3 Full Pack |
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GaNPower |
GANFET N-CH 650V 8A DFN5X6
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Drive Voltage (Max Rds On, Min Rds On): 6V
- Vgs(th) (Max) @ Id: 1.4V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds: 63 pF @ 400 V
- Vgs (Max): +7.5V, -12V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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Package: - |
Request a Quote |
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GaNFET (Gallium Nitride) | 650 V | 8A | 6V | 1.4V @ 3.5mA | 2.1 nC @ 6 V | 63 pF @ 400 V | +7.5V, -12V | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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onsemi |
TRENCH 6 40V LFPAK 5X7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 314A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 10-TCPAK
- Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
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Package: - |
Stock9,000 |
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MOSFET (Metal Oxide) | 40 V | 314A (Tc) | 10V | 3.5V @ 130µA | 47 nC @ 10 V | 3300 pF @ 25 V | ±20V | - | 300W (Tc) | 1.65mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 10-TCPAK | 10-PowerLSOP (0.209", 5.30mm Width) |
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Panjit International Inc. |
30V P-CHANNEL ENHANCEMENT MODE M
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 35W (Tc)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock6,609 |
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MOSFET (Metal Oxide) | 30 V | 8.4A (Ta), 35A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 11 nC @ 4.5 V | 1169 pF @ 15 V | ±20V | - | 2W (Ta), 35W (Tc) | 19mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Microchip Technology |
SICFET N-CH 1200V 37A TO247-4
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
- Vgs (Max): +23V, -10V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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Package: - |
Stock312 |
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SiCFET (Silicon Carbide) | 1200 V | 37A (Tc) | 20V | 2.8V @ 1mA | 64 nC @ 20 V | 838 pF @ 1000 V | +23V, -10V | - | 200W (Tc) | 100mOhm @ 15A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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onsemi |
MOSFET N-CH 60V 1.7A SUPERSOT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 1.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 1.7A (Ta) | 6V, 10V | 3V @ 250µA | 10 nC @ 10 V | 560 pF @ 15 V | ±20V | - | 500mW (Ta) | 100mOhm @ 1.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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