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Infineon Technologies |
MOSFET N-CH 400V 500MA SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock4,864 |
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MOSFET (Metal Oxide) | 400V | 500mA (Ta) | 10V | 4V @ 1mA | - | 400pF @ 25V | ±20V | - | 1.8W (Ta) | 3 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V SOT23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock7,216 |
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Renesas Electronics America |
MOSFET N-CH 40V 60A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 105W (Tc)
- Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 30A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262-3
- Package / Case: TO-262-3 Full Pack, I2Pak
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Package: TO-262-3 Full Pack, I2Pak |
Stock7,936 |
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MOSFET (Metal Oxide) | 40V | 60A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 3680pF @ 25V | ±20V | - | 1.8W (Ta), 105W (Tc) | 4.3 mOhm @ 30A, 10V | 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Full Pack, I2Pak |
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Alpha & Omega Semiconductor Inc. |
MOSFET N CH 30V 13.7A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 13.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock20,268 |
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MOSFET (Metal Oxide) | 30V | 13.7A (Ta) | 4.5V, 10V | 2V @ 250µA | 36nC @ 4.5V | 4050pF @ 15V | ±12V | - | 3.1W (Ta) | 10.5 mOhm @ 13.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics America |
MOSFET N-CH 100V 23A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock2,064 |
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MOSFET (Metal Oxide) | 100V | 23A (Ta) | 10V | - | 35nC @ 10V | 2550pF @ 10V | ±20V | - | 60W (Tc) | 17 mOhm @ 11.5A, 10V | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET P-CH 30V 1.49A SOT23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,548,052 |
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MOSFET (Metal Oxide) | 30V | 1.49A (Ta) | 4.5V, 10V | 3V @ 250µA | 10nC @ 10V | 180pF @ 15V | ±20V | - | 700mW (Ta) | 200 mOhm @ 1.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Panasonic Electronic Components |
MOSFET N-CH 30V .1A S-MINI-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 50 Ohm @ 10mA, 5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMini3-G1
- Package / Case: SC-70, SOT-323
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Package: SC-70, SOT-323 |
Stock36,000 |
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MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 5V | 2V @ 1µA | - | - | ±20V | - | 150mW (Ta) | 50 Ohm @ 10mA, 5V | 150°C (TJ) | Surface Mount | SMini3-G1 | SC-70, SOT-323 |
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EPC |
TRANS GAN 300V 4A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.85nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 194pF @ 240V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 3A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die Outline (12-Solder Bar)
- Package / Case: Die
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Package: Die |
Stock2,800 |
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GaNFET (Gallium Nitride) | 300V | 4A (Ta) | 5V | 2.5V @ 1mA | 1.85nC @ 5V | 194pF @ 240V | +6V, -4V | - | - | 150 mOhm @ 3A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (12-Solder Bar) | Die |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V 7.5A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 147W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock4,656 |
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MOSFET (Metal Oxide) | 600V | 7.5A (Tc) | 10V | 4V @ 250µA | 36nC @ 10V | 1255pF @ 25V | ±30V | - | 147W (Tc) | 1.2 Ohm @ 3.75A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Rohm Semiconductor |
MOSFET P-CH 30V 9A 8SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock73,728 |
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MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4V, 10V | 2.5V @ 1mA | 39nC @ 5V | 4000pF @ 10V | ±20V | - | 2W (Ta) | 14 mOhm @ 9A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 60V 2.8A SOT23-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 459pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-26
- Package / Case: SOT-23-6
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Package: SOT-23-6 |
Stock4,176 |
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MOSFET (Metal Oxide) | 60V | 2.8A (Ta) | 4.5V, 10V | 1V @ 250µA | 5.8nC @ 10V | 459pF @ 40V | ±20V | - | 1.1W (Ta) | 80 mOhm @ 4.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,080 |
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MOSFET (Metal Oxide) | 100V | 70A (Tc) | 10V | 4V @ 250µA | 145nC @ 10V | 4300pF @ 30V | ±20V | - | 120W (Tc) | 13 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 30V 12A SC70-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-70-6 Single
- Package / Case: PowerPAK? SC-70-6
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Package: PowerPAK? SC-70-6 |
Stock2,896 |
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MOSFET (Metal Oxide) | 30V | 12A (Tc) | 2.5V, 10V | 1.5V @ 250µA | 72nC @ 10V | 2140pF @ 15V | ±12V | - | 3.5W (Ta), 19W (Tc) | 20 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |
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Infineon Technologies |
MOSFET N-CH 40V 160A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock504,720 |
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MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | ±20V | - | 200W (Tc) | 3.7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 80V 4.6A TSOP-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
- Rds On (Max) @ Id, Vgs: 93 mOhm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock36,180 |
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MOSFET (Metal Oxide) | 80V | 4.6A (Tc) | 4.5V, 10V | 3V @ 250µA | 7.5nC @ 10V | 195pF @ 40V | ±20V | - | 2W (Ta), 3.6W (Tc) | 93 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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NTE Electronics, Inc |
MOSFET N-CH 200V 12.8A TO3PML
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 73W (Tc)
- Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 40V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PML
- Package / Case: TO-3P-3 Full Pack
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 200 V | 12.8A (Tc) | 10V | 4V @ 250µA | 58 nC @ 10 V | 1500 pF @ 25 V | ±30V | - | 73W (Tc) | 180mOhm @ 6.4A, 40V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PML | TO-3P-3 Full Pack |
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onsemi |
FDD4243-G
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 6.7A (Ta), 14A (Tc) | 4.5V, 10V | 3V @ 250µA | 29 nC @ 10 V | 1550 pF @ 20 V | ±20V | - | 42W (Tc) | 44mOhm @ 6.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 30V 3..5A SMALL SIGNAL MOSFE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 910mW (Ta)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TUMT6
- Package / Case: 6-SMD, Flat Leads
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Package: - |
Stock8,700 |
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MOSFET (Metal Oxide) | 30 V | 3.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 3.3 nC @ 5 V | 180 pF @ 10 V | ±20V | - | 910mW (Ta) | 50mOhm @ 3.5A, 10V | 150°C (TJ) | Surface Mount | TUMT6 | 6-SMD, Flat Leads |
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Panjit International Inc. |
MOSFET N-CH 20V 1.2A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 1.2A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 0.9 nC @ 4.5 V | 39 pF @ 10 V | ±12V | - | 1.25W (Ta) | 380mOhm @ 1.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia USA Inc. |
MOSFET N-CH 40V 180A LFPAK56
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 166W (Ta)
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: - |
Stock4,440 |
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MOSFET (Metal Oxide) | 40 V | 180A (Ta) | 10V | 3.6V @ 1mA | 63 nC @ 10 V | 5130 pF @ 20 V | ±20V | - | 166W (Ta) | 2.2mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 80V 37A/330A HDSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 330A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-16-2
- Package / Case: 16-PowerSOP Module
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Package: - |
Stock5,103 |
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MOSFET (Metal Oxide) | 80 V | 37A (Ta), 330A (Tc) | 6V, 10V | 3.8V @ 230µA | 180 nC @ 10 V | 13000 pF @ 40 V | ±20V | - | 3.8W (Ta), 300W (Tc) | 1.4mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HDSOP-16-2 | 16-PowerSOP Module |
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Diodes Incorporated |
MOSFET N-CH 60V 250MA SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300mW
- Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock25,857 |
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MOSFET (Metal Oxide) | 60 V | 250mA (Ta) | 10V | 3V @ 250µA | - | 50 pF @ 10 V | ±20V | - | 300mW | 5Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor Inc. |
N
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
- Vgs (Max): 20V
- FET Feature: -
- Power Dissipation (Max): 8.3W (Ta), 208W (Tc)
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 4.1A (Ta), 20A (Tc) | 10V | - | 34 nC @ 10 V | 1935 pF @ 100 V | 20V | - | 8.3W (Ta), 208W (Tc) | - | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IceMOS Technology |
Superjunction MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 250mOhm @ 7.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 3.9V @ 250µA | 59 nC @ 10 V | 2064 pF @ 25 V | ±20V | - | 156W (Tc) | 250mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Central Semiconductor Corp |
MOSFET N-CH 30V 3.6A DIE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
- Vgs (Max): 12V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 3.6A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 13 nC @ 4.5 V | 590 pF @ 10 V | 12V | - | - | 78mOhm @ 1.8A, 2.5V | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Harris Corporation |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 250mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 400 V | 20A (Tc) | 10V | 4V @ 250µA | 100 nC @ 10 V | 4000 pF @ 25 V | ±20V | - | 250W (Tc) | 250mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
GAN HV
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
- Vgs (Max): -10V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-DSO-20-85
- Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
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Package: - |
Request a Quote |
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GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | 1.6V @ 2.6mA | - | 380 pF @ 400 V | -10V | - | 125W (Tc) | - | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-20-85 | 20-PowerSOIC (0.433", 11.00mm Width) |
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Good-Ark Semiconductor |
MOSFET, P-CH, SINGLE, -50A, -30V
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 50A
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 59W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PPAK (3.1x3.05)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock17,211 |
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MOSFET (Metal Oxide) | 30 V | 50A | 4.5V, 10V | 2.5V @ 250µA | 35 nC @ 4.5 V | 3300 pF @ 15 V | ±20V | - | 2.2W (Ta), 59W (Tc) | 8.5mOhm @ 10A, 10V | -55°C ~ 150°C | Surface Mount | 8-PPAK (3.1x3.05) | 8-PowerVDFN |