Page 1427 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF9328PBF
Infineon Technologies

MOSFET P-CH 30V 12A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,656
SPB80N03S2L06T
Infineon Technologies

MOSFET N-CH 30V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,736
IXFV12N120P
IXYS

MOSFET N-CH 1200V 12A PLUS220

Package: TO-220-3, Short Tab

Stock5,248
HUF75337S3S
Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,408
FQPF4N20L
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3A TO-220F

Package: TO-220-3 Full Pack

Stock3,568
NTP45N06LG
ON Semiconductor

MOSFET N-CH 60V 45A TO220AB

Package: TO-220-3

Stock459,648
IPA60R360P7SXKSA1
Infineon Technologies

CONSUMER

Package: -

Stock7,648
IPN80R1K4P7ATMA1
Infineon Technologies

LOW POWER_NEW

Package: -

Stock3,216
IXTP7N60PM
IXYS

MOSFET N-CH 600V 4A TO-220

Package: TO-220-3

Stock3,280
IRF610LPBF
Vishay Siliconix

MOSFET N-CH 200V 3.3A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock33,516
NTTFS5CS70NLTAG
ON Semiconductor

T6 60V NCH LL IN U8FL

Package: -

Stock6,192
STW23NM50N
STMicroelectronics

MOSFET N-CH 500V 17A TO-247

Package: TO-247-3

Stock14,460
STL100N12F7
STMicroelectronics

MOSFET N-CH 120V 100A POWERFLAT

Package: 8-PowerVDFN

Stock3,392
STD5N62K3
STMicroelectronics

MOSFET N-CH 620V 4.2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock390,000
IRLB8314PBF
Infineon Technologies

MOSFET N-CH 30V 184A TO220

Package: TO-220-3

Stock103,464
STW20N95K5
STMicroelectronics

MOSFET N-CH 950V 17.5A TO-247

Package: TO-247-3

Stock397,188
SI2309CDS-T1-GE3
Vishay Siliconix

MOSFET P-CH 60V 1.6A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock386,172
PHT6NQ10T,135
Nexperia USA Inc.

MOSFET N-CH 100V 3A SOT223

Package: TO-261-4, TO-261AA

Stock74,442
SPD50P03LGXT
Infineon Technologies

MOSFET P-CH 30V 50A TO252-5

Package: -

Request a Quote
DMPH16M1UPSW-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V PowerDI5060

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF9328PBF	Infineon Technologies	MOSFET P-CH 30V 12A 8-SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 11.9 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,656	MOSFET (Metal Oxide)	30V	12A (Tc)	4.5V, 10V	2.4V @ 25µA	52nC @ 10V	1680pF @ 25V	±20V	-	2.5W (Ta)	11.9 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SPB80N03S2L06T	Infineon Technologies	MOSFET N-CH 30V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,736	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2V @ 80µA	68nC @ 10V	2530pF @ 25V	±20V	-	150W (Tc)	5.9 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFV12N120P	IXYS	MOSFET N-CH 1200V 12A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock5,248	MOSFET (Metal Oxide)	1200V	12A (Tc)	10V	6.5V @ 1mA	103nC @ 10V	5400pF @ 25V	±30V	-	543W (Tc)	1.35 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS220	TO-220-3, Short Tab
HUF75337S3S	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 109nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1775pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 175W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,408	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	109nC @ 20V	1775pF @ 25V	±20V	-	175W (Tc)	14 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF4N20L	Fairchild/ON Semiconductor	MOSFET N-CH 200V 3A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,568	MOSFET (Metal Oxide)	200V	3A (Tc)	5V, 10V	2V @ 250µA	5.2nC @ 5V	310pF @ 25V	±20V	-	27W (Tc)	1.35 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
NTP45N06LG	ON Semiconductor	MOSFET N-CH 60V 45A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Rds On (Max) @ Id, Vgs: 28 mOhm @ 22.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock459,648	MOSFET (Metal Oxide)	60V	45A (Ta)	5V	2V @ 250µA	32nC @ 5V	1700pF @ 25V	±15V	-	2.4W (Ta), 125W (Tj)	28 mOhm @ 22.5A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPA60R360P7SXKSA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,648	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPN80R1K4P7ATMA1	Infineon Technologies	LOW POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,216	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTP7N60PM	IXYS	MOSFET N-CH 600V 4A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,280	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	5.5V @ 100µA	20nC @ 10V	1180pF @ 25V	±30V	-	41W (Tc)	1.1 Ohm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF610LPBF	Vishay Siliconix	MOSFET N-CH 200V 3.3A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock33,516	MOSFET (Metal Oxide)	200V	3.3A (Tc)	10V	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	±20V	-	3W (Ta), 36W (Tc)	1.5 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
NTTFS5CS70NLTAG	ON Semiconductor	T6 60V NCH LL IN U8FL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,192	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STW23NM50N	STMicroelectronics	MOSFET N-CH 500V 17A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock14,460	MOSFET (Metal Oxide)	500V	17A (Tc)	10V	4V @ 250µA	45nC @ 10V	1330pF @ 50V	±25V	-	125W (Tc)	190 mOhm @ 8.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STL100N12F7	STMicroelectronics	MOSFET N-CH 120V 100A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 60V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,392	MOSFET (Metal Oxide)	120V	100A (Tc)	10V	4.5V @ 250µA	46nC @ 10V	3300pF @ 60V	±20V	-	136W (Tc)	7.5 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
STD5N62K3	STMicroelectronics	MOSFET N-CH 620V 4.2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock390,000	MOSFET (Metal Oxide)	620V	4.2A (Tc)	10V	4.5V @ 50µA	26nC @ 10V	680pF @ 50V	±30V	-	70W (Tc)	1.6 Ohm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLB8314PBF	Infineon Technologies	MOSFET N-CH 30V 184A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 68A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	30V	130A (Tc)	4.5V, 10V	2.2V @ 100µA	60nC @ 4.5V	5050pF @ 15V	±20V	-	125W (Tc)	2.4 mOhm @ 68A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
STW20N95K5	STMicroelectronics	MOSFET N-CH 950V 17.5A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 330 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock397,188	MOSFET (Metal Oxide)	950V	17.5A (Tc)	10V	5V @ 100µA	40nC @ 10V	1500pF @ 100V	±30V	-	250W (Tc)	330 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
SI2309CDS-T1-GE3	Vishay Siliconix	MOSFET P-CH 60V 1.6A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Rds On (Max) @ Id, Vgs: 345 mOhm @ 1.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock386,172	MOSFET (Metal Oxide)	60V	1.6A (Tc)	4.5V, 10V	3V @ 250µA	4.1nC @ 4.5V	210pF @ 30V	±20V	-	1W (Ta), 1.7W (Tc)	345 mOhm @ 1.25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
PHT6NQ10T,135	Nexperia USA Inc.	MOSFET N-CH 100V 3A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock74,442	MOSFET (Metal Oxide)	100V	3A (Ta)	10V	4V @ 1mA	21nC @ 10V	633pF @ 25V	±20V	-	1.8W (Ta), 8.3W (Tc)	90 mOhm @ 3A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
SPD50P03LGXT	Infineon Technologies	MOSFET P-CH 30V 50A TO252-5 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-5 Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	50A (Tc)	4.5V, 10V	2V @ 250µA	126 nC @ 10 V	6880 pF @ 25 V	±20V	-	150W (Tc)	7mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-5	TO-252-5, DPAK (4 Leads + Tab), TO-252AD
DMPH16M1UPSW-13	Diodes Incorporated	MOSFET BVDSS: 8V~24V PowerDI5060 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.95W Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	12 V	96A (Tc)	2.5V, 4.5V	1V @ 250µA	164 nC @ 8 V	5392 pF @ 10 V	±8V	-	1.95W	6mOhm @ 15A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
SIR846ADP-T1-RE3	Vishay Siliconix	MOSFET N-CH 100V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	60A (Tc)	6V, 10V	3V @ 250µA	66 nC @ 10 V	2350 pF @ 50 V	±20V	-	83W (Tc)	7.8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SQ3426EV-T1_BE3	Vishay Siliconix	MOSFET N-CHANNEL 60V 7A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock5,013	MOSFET (Metal Oxide)	60 V	7A (Tc)	4.5V, 10V	2.5V @ 250µA	12 nC @ 4.5 V	720 pF @ 30 V	±20V	-	5W (Tc)	42mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SFU9224TU	Fairchild Semiconductor	P-CHANNEL POWER MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	2.5A (Tc)	10V	4V @ 250µA	20 nC @ 10 V	540 pF @ 25 V	±30V	-	2.5W (Ta), 30W (Tc)	2.4Ohm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
SIHP22N60S-E3	Vishay Siliconix	MOSFET N-CH 600V 22A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	22A (Tc)	-	4V @ 250µA	110 nC @ 10 V	2810 pF @ 25 V	-	-	-	190mOhm @ 11A, 10V	-	Through Hole	TO-220AB	TO-220-3
STD30NF06LAG	STMicroelectronics	MOSFET N-CH 60V 28A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	35A (Tc)	-	-	-	-	-	-	-	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
APT8011JLL	Microchip Technology	MOSFET N-CH 800V 51A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 110mOhm @ 25.5A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Stock30	MOSFET (Metal Oxide)	800 V	51A (Tc)	-	5V @ 5mA	650 nC @ 10 V	9480 pF @ 25 V	-	-	-	110mOhm @ 25.5A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
SI2301CDS-T1-BE3	Vishay Siliconix	P-CHANNEL 20-V (D-S) MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 860mW (Ta), 1.6W (Tc) Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock28,479	MOSFET (Metal Oxide)	20 V	2.3A (Ta), 3.1A (Tc)	2.5V, 4.5V	1V @ 250µA	10 nC @ 4.5 V	405 pF @ 10 V	±8V	-	860mW (Ta), 1.6W (Tc)	112mOhm @ 2.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IXFT80N65X2HV	IXYS	MOSFET N-CH 650V 80A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXFT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	80A (Tc)	10V	5V @ 4mA	140 nC @ 10 V	8300 pF @ 25 V	±30V	-	890W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-268HV (IXFT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA