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Infineon Technologies |
MOSFET N-CH 60V 2.6A SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock7,088 |
|
MOSFET (Metal Oxide) | 60V | 2.6A (Ta) | 4.5V, 10V | 2V @ 20µA | 20nC @ 10V | 380pF @ 25V | ±20V | - | 1.8W (Ta) | 90 mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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|
Infineon Technologies |
MOSFET N-CH 30V 86A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock85,884 |
|
MOSFET (Metal Oxide) | 30V | 86A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 26nC @ 4.5V | 2330pF @ 15V | ±20V | - | 79W (Tc) | 6.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 60V 115A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4080pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 270W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 54A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock4,160 |
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MOSFET (Metal Oxide) | 60V | 115A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 4080pF @ 25V | ±20V | - | 270W (Tc) | 9 mOhm @ 54A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body
|
Package: TO-226-3, TO-92-3 Long Body |
Stock6,048 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
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Global Power Technologies Group |
MOSFET N-CH 650V 6.5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1201pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3.25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,904 |
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MOSFET (Metal Oxide) | 650V | 6.5A (Tc) | 10V | 4V @ 250µA | 27nC @ 10V | 1201pF @ 25V | ±30V | - | 120W (Tc) | 1.4 Ohm @ 3.25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 14.5A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4490pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock2,896 |
|
MOSFET (Metal Oxide) | 30V | 14.5A (Ta), 124A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 40nC @ 4.5V | 4490pF @ 12V | ±20V | - | 1.43W (Ta), 93.75W (Tc) | 4 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 100V 4.8A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 6.9A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,424,828 |
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MOSFET (Metal Oxide) | 100V | 4.8A (Ta) | 6V, 10V | 2V @ 250µA (Min) | 30nC @ 10V | - | ±20V | - | 1.8W (Ta) | 34 mOhm @ 6.9A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Microsemi Corporation |
MOSFET N-CH 1200V 5A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1385pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 225W (Tc)
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 [K]
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock5,536 |
|
MOSFET (Metal Oxide) | 1200V | 5A (Tc) | 10V | 5V @ 1mA | 43nC @ 10V | 1385pF @ 25V | ±30V | - | 225W (Tc) | 4 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 [K] | TO-220-3 |
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|
NXP |
MOSFET N-CH 40V 120A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 199nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11334pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 263W (Tc)
- Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock5,312 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 199nC @ 10V | 11334pF @ 25V | ±16V | - | 263W (Tc) | 2.7 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
GeneSiC Semiconductor |
TRANS SJT 1200V 45A TO247
- FET Type: -
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 3091pF @ 800V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 282W (Tc)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 20A
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AB
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock3,184 |
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SiC (Silicon Carbide Junction Transistor) | 1200V | 45A (Tc) | - | - | - | 3091pF @ 800V | - | - | 282W (Tc) | 50 mOhm @ 20A | -55°C ~ 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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|
IXYS |
MOSFET N-CH 900V 6A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock8,580 |
|
MOSFET (Metal Oxide) | 900V | 6A (Tc) | 10V | 4.5V @ 250µA | 130nC @ 10V | 2600pF @ 25V | ±20V | - | 180W (Tc) | 1.4 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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|
Infineon Technologies |
MOSFET N-CH 25V 30A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 46W (Tc)
- Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: P-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,544 |
|
MOSFET (Metal Oxide) | 25V | 30A (Tc) | 4.5V, 10V | 2V @ 20µA | 8.3nC @ 5V | 1043pF @ 15V | ±20V | - | 46W (Tc) | 12.8 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | P-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 30V 2.4A SOT-23-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-6
- Package / Case: SOT-23-6
|
Package: SOT-23-6 |
Stock531,528 |
|
MOSFET (Metal Oxide) | 30V | 2.4A (Ta) | 4.5V, 10V | 1V @ 250µA | 3.9nC @ 10V | 190pF @ 25V | ±20V | - | 1.1W (Ta) | 120 mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
|
|
Nexperia USA Inc. |
MOSFET N-CH 60V TO-236AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 478mW (Ta), 8.36W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB (SOT23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,704 |
|
MOSFET (Metal Oxide) | 60V | 3.1A (Ta) | 4.5V, 10V | 2.7V @ 250µA | 19nC @ 10V | 646pF @ 30V | ±20V | - | 478mW (Ta), 8.36W (Tc) | 60 mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 40V 240A PSOF8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 188nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 357W (Tj)
- Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PSOF
- Package / Case: 8-PowerSFN
|
Package: 8-PowerSFN |
Stock3,200 |
|
MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 4V @ 250µA | 188nC @ 10V | 12000pF @ 25V | ±20V | - | 357W (Tj) | 0.9 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-PSOF | 8-PowerSFN |
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|
Infineon Technologies |
MOSFET N-CH 60V 7A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 26 mOhm @ 4.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,400 |
|
MOSFET (Metal Oxide) | 60V | 7A (Ta) | 4.5V, 10V | 3V @ 250µA | 31nC @ 4.5V | 1740pF @ 25V | ±20V | - | 2.5W (Ta) | 26 mOhm @ 4.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
Vishay Siliconix |
MOSFET N-CH 60V 2.7A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
- Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
|
Package: - |
Stock11,835 |
|
MOSFET (Metal Oxide) | 60 V | 2.7A (Tc) | - | 4V @ 250µA | 11 nC @ 10 V | 300 pF @ 25 V | ±20V | - | 2W (Ta), 3.1W (Tc) | 200mOhm @ 1.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
Infineon Technologies |
MOSFET P-CH 30V 25.4/100A 8TDSON
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.1V @ 345µA
- Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 15 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
|
Package: - |
Stock13,941 |
|
MOSFET (Metal Oxide) | 30 V | 25.4A (Ta), 100A (Tc) | 6V, 10V | 3.1V @ 345µA | 186 nC @ 10 V | 14000 pF @ 15 V | ±25V | - | 2.5W (Ta), 125W (Tc) | 3mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
|
|
Vishay Siliconix |
MOSFET N-CH 40V 31.7A/109A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 31.7A (Ta), 109A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 20 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
- Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
|
Package: - |
Stock89,295 |
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MOSFET (Metal Oxide) | 40 V | 31.7A (Ta), 109A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 61 nC @ 10 V | 3030 pF @ 20 V | +20V, -16V | - | 4.8W (Ta), 56.8W (Tc) | 2.65mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S |
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onsemi |
MOSFET N-CH 60V SUPERSOT6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT™-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 3A (Ta) | 4.5V, 10V | 3V @ 250µA | 24 nC @ 10 V | 759 pF @ 30 V | ±20V | - | 800mW (Ta) | 105mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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IXYS |
MOSFET N-CH 250V 42A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 84mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
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MOSFET (Metal Oxide) | 250 V | 42A (Tc) | 10V | 5.5V @ 250µA | 70 nC @ 10 V | 2300 pF @ 25 V | ±20V | - | 300W (Tc) | 84mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: - |
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MOSFET (Metal Oxide) | 200 V | 5.5A (Tc) | 10V | 4V @ 1mA | - | 530 pF @ 25 V | ±20V | - | 40W (Tc) | 600mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI50
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 51.7W (Tc)
- Rds On (Max) @ Id, Vgs: 57mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI5060-8 (Type UX)
- Package / Case: 8-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 100 V | 20A (Tc) | 4.5V, 10V | 3V @ 250µA | 5.1 nC @ 10 V | 266 pF @ 50 V | ±20V | - | 1.5W (Ta), 51.7W (Tc) | 57mOhm @ 4.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
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Microchip Technology |
MOSFET SIC 1700V 35 MOHM TO-247-
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 3.25V @ 2.5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 1000 V
- Vgs (Max): +23V, -10V
- FET Feature: -
- Power Dissipation (Max): 370W (Tc)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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Package: - |
Stock42 |
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SiCFET (Silicon Carbide) | 1700 V | 68A (Tc) | 20V | 3.25V @ 2.5mA (Typ) | 178 nC @ 20 V | 3300 pF @ 1000 V | +23V, -10V | - | 370W (Tc) | 45mOhm @ 30A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Infineon Technologies |
IAUC60N04S6L039ATMA1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1179 pF @ 25 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 4.02mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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Package: - |
Stock41,658 |
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MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 2V @ 14µA | 20 nC @ 10 V | 1179 pF @ 25 V | ±16V | - | 42W (Tc) | 4.02mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V TO252 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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MOSFET (Metal Oxide) | 100 V | 59A (Tc) | 6V, 10V | 4V @ 250µA | 30.1 nC @ 10 V | 2343 pF @ 50 V | ±20V | - | 2W (Ta) | 14mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 49W (Tc)
- Rds On (Max) @ Id, Vgs: 63mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 18A (Tc) | 4.5V, 10V | 3V @ 250µA | 15 nC @ 10 V | 485 pF @ 25 V | ±16V | - | 49W (Tc) | 63mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |