Page 1439 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

PSMN4R6-100XS,127
NXP

MOSFET N-CH 100V 70.4A TO-220F

Package: TO-220-3 Full Pack, Isolated Tab

Stock7,376
SI7888DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 9.4A PPAK SO-8

Package: PowerPAK? SO-8

Stock14,376
FQU13N06TU
Fairchild/ON Semiconductor

MOSFET N-CH 60V 10A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,296
FDP24AN06LA0
Fairchild/ON Semiconductor

MOSFET N-CH 60V 40A TO-220AB

Package: TO-220-3

Stock4,656
ZXMN2A02X8TA
Diodes Incorporated

MOSFET N-CH 20V 6.2A 8-MSOP

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock202,344
IRF744L
Vishay Siliconix

MOSFET N-CH 450V 8.8A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,616
IRFBC30S
Vishay Siliconix

MOSFET N-CH 600V 3.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock12,144
AON6554
Alpha & Omega Semiconductor Inc.

MOSFET N CH 30V 36A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock351,864
PMF250XNEAX
Nexperia USA Inc.

MOSFET N-CH 30V 900MA SC70

Package: SC-70, SOT-323

Stock2,736
RSJ250P10TL
Rohm Semiconductor

MOSFET P-CH 100V 25A LPTS

Package: SC-83

Stock5,952
IRL7486MTRPBF
Infineon Technologies

MOSFET N-CH 40V 209A

Package: DirectFET? Isometric ME

Stock3,024
SI7852DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 80V 7.6A PPAK SO-8

Package: PowerPAK? SO-8

Stock64,836
SI4101DY-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 25.7A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,784
NTNUS3171PZT5G
ON Semiconductor

MOSFET P-CH 20V 0.15A SOT-1123

Package: SOT-1123

Stock6,416
SI2374DS-T1-GE3
Vishay Siliconix

MOSFET N-CHAN 20V SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock448,560
IRLML6402TRPBF
Infineon Technologies

MOSFET P-CH 20V 3.7A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock15,000,588
DMG1012UW-7
Diodes Incorporated

MOSFET N-CH 20V 1A SOT323

Package: SC-70, SOT-323

Stock2,261,568
AOT66616L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 38.5A/140A TO220

Package: -

Request a Quote
SIS822DNT-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 12A PPAK1212-8

Package: -

Request a Quote
APT12080LVRG
Microchip Technology

MOSFET N-CH 1200V 16A TO264

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
PSMN4R6-100XS,127	NXP	MOSFET N-CH 100V 70.4A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63.8W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock7,376	MOSFET (Metal Oxide)	100V	70.4A (Tc)	10V	4V @ 1mA	153nC @ 10V	9900pF @ 50V	±20V	-	63.8W (Tc)	4.6 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack, Isolated Tab
SI7888DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 9.4A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 12.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock14,376	MOSFET (Metal Oxide)	30V	9.4A (Ta)	4.5V, 10V	2V @ 250µA	10.5nC @ 5V	-	±12V	-	1.8W (Ta)	12 mOhm @ 12.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
FQU13N06TU	Fairchild/ON Semiconductor	MOSFET N-CH 60V 10A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,296	MOSFET (Metal Oxide)	60V	10A (Tc)	10V	4V @ 250µA	7.5nC @ 10V	310pF @ 25V	±25V	-	2.5W (Ta), 28W (Tc)	140 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDP24AN06LA0	Fairchild/ON Semiconductor	MOSFET N-CH 60V 40A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock4,656	MOSFET (Metal Oxide)	60V	7.8A (Ta), 40A (Tc)	5V, 10V	3V @ 250µA	21nC @ 5V	1850pF @ 25V	±20V	-	75W (Tc)	19 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
ZXMN2A02X8TA	Diodes Incorporated	MOSFET N-CH 20V 6.2A 8-MSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 11A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MSOP Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock202,344	MOSFET (Metal Oxide)	20V	6.2A (Ta)	2.5V, 4.5V	700mV @ 250µA	18.6nC @ 4.5V	1900pF @ 10V	±20V	-	1.1W (Ta)	20 mOhm @ 11A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-MSOP	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IRF744L	Vishay Siliconix	MOSFET N-CH 450V 8.8A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 630 mOhm @ 5.3A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,616	MOSFET (Metal Oxide)	450V	8.8A (Tc)	10V	4V @ 250µA	80nC @ 10V	1400pF @ 25V	±20V	-	-	630 mOhm @ 5.3A, 10V	-	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFBC30S	Vishay Siliconix	MOSFET N-CH 600V 3.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock12,144	MOSFET (Metal Oxide)	600V	3.6A (Tc)	10V	4V @ 250µA	31nC @ 10V	660pF @ 25V	±20V	-	3.1W (Ta), 74W (Tc)	2.2 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AON6554	Alpha & Omega Semiconductor Inc.	MOSFET N CH 30V 36A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 5.6W (Ta), 70W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock351,864	MOSFET (Metal Oxide)	30V	36A (Ta), 85A (Tc)	4.5V, 10V	2.2V @ 250µA	65nC @ 10V	3020pF @ 15V	±12V	-	5.6W (Ta), 70W (Tc)	2.9 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
PMF250XNEAX	Nexperia USA Inc.	MOSFET N-CH 30V 900MA SC70 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.65nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 342mW (Ta) Rds On (Max) @ Id, Vgs: 254 mOhm @ 900mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock2,736	MOSFET (Metal Oxide)	30V	900mA (Ta)	2.5V, 4.5V	1.25V @ 250µA	1.65nC @ 4.5V	81pF @ 15V	±12V	-	342mW (Ta)	254 mOhm @ 900mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70	SC-70, SOT-323
RSJ250P10TL	Rohm Semiconductor	MOSFET P-CH 100V 25A LPTS FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 63 mOhm @ 25A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock5,952	MOSFET (Metal Oxide)	100V	25A (Ta)	4V, 10V	2.5V @ 1mA	60nC @ 5V	8000pF @ 25V	±20V	-	50W (Tc)	63 mOhm @ 25A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
IRL7486MTRPBF	Infineon Technologies	MOSFET N-CH 40V 209A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 111nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6904pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 123A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DirectFET? Isometric ME Package / Case: DirectFET? Isometric ME	Package: DirectFET? Isometric ME	Stock3,024	MOSFET (Metal Oxide)	40V	209A (Tc)	4.5V, 10V	2.5V @ 150µA	111nC @ 4.5V	6904pF @ 25V	±20V	-	104W (Tc)	1.25 mOhm @ 123A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DirectFET? Isometric ME	DirectFET? Isometric ME
SI7852DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 80V 7.6A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock64,836	MOSFET (Metal Oxide)	80V	7.6A (Ta)	6V, 10V	2V @ 250µA (Min)	41nC @ 10V	-	±20V	-	1.9W (Ta)	16.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI4101DY-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 25.7A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 203nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8190pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.9W (Ta), 6W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,784	MOSFET (Metal Oxide)	30V	25.7A (Tc)	4.5V, 10V	2.5V @ 250µA	203nC @ 10V	8190pF @ 15V	±20V	-	2.9W (Ta), 6W (Tc)	6 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NTNUS3171PZT5G	ON Semiconductor	MOSFET P-CH 20V 0.15A SOT-1123 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 125mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-1123 Package / Case: SOT-1123	Package: SOT-1123	Stock6,416	MOSFET (Metal Oxide)	20V	150mA (Ta)	1.2V, 4.5V	1V @ 250µA	-	13pF @ 15V	±8V	-	125mW (Ta)	3.5 Ohm @ 100mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-1123	SOT-1123
SI2374DS-T1-GE3	Vishay Siliconix	MOSFET N-CHAN 20V SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 96mW, 80mW Rds On (Max) @ Id, Vgs: 30 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock448,560	MOSFET (Metal Oxide)	20V	4.5A (Ta), 18A (Tc)	1.8V, 4.5V	1V @ 250µA	20nC @ 10V	735pF @ 15V	±8V	-	96mW, 80mW	30 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IRLML6402TRPBF	Infineon Technologies	MOSFET P-CH 20V 3.7A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro3?/SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock15,000,588	MOSFET (Metal Oxide)	20V	3.7A (Ta)	2.5V, 4.5V	1.2V @ 250µA	12nC @ 5V	633pF @ 10V	±12V	-	1.3W (Ta)	65 mOhm @ 3.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Micro3?/SOT-23	TO-236-3, SC-59, SOT-23-3
DMG1012UW-7	Diodes Incorporated	MOSFET N-CH 20V 1A SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 290mW (Ta) Rds On (Max) @ Id, Vgs: 450 mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock2,261,568	MOSFET (Metal Oxide)	20V	1A (Ta)	1.8V, 4.5V	1V @ 250µA	0.74nC @ 4.5V	60.67pF @ 16V	±6V	-	290mW (Ta)	450 mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
AOT66616L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 38.5A/140A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 38.5A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8.3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	38.5A (Ta), 140A (Tc)	6V, 10V	3.4V @ 250µA	60 nC @ 10 V	2870 pF @ 30 V	±20V	-	8.3W (Ta), 125W (Tc)	3.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
SIS822DNT-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 12A PPAK1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15.6W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	12A (Tc)	4.5V, 10V	2.5V @ 250µA	12 nC @ 10 V	435 pF @ 15 V	±20V	-	15.6W (Tc)	24mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
APT12080LVRG	Microchip Technology	MOSFET N-CH 1200V 16A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 485 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (L) Package / Case: TO-264-3, TO-264AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	16A (Tc)	10V	4V @ 2.5mA	485 nC @ 10 V	7800 pF @ 25 V	±30V	-	520W (Tc)	800mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (L)	TO-264-3, TO-264AA
SQJQ184E-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 80 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 430A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16010 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: PowerPAK® 8 x 8	Package: -	Stock11,910	MOSFET (Metal Oxide)	80 V	430A (Tc)	10V	3.5V @ 250µA	272 nC @ 10 V	16010 pF @ 25 V	±20V	-	600W (Tc)	1.4mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8	PowerPAK® 8 x 8
GT700P08K	Goford Semiconductor	P-80V,-20A,RD(MAX)<72M@-10V,VTH- FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1615 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,431	MOSFET (Metal Oxide)	60 V	20A (Tc)	10V	3.5V @ 250µA	75 nC @ 10 V	1615 pF @ 40 V	±20V	-	125W (Tc)	72mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
EC4301C-TL	onsemi	PCH 1.5V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA80N075L2-TRL	IXYS	MOSFET N-CH 75V 80A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	75 V	80A (Tc)	10V	4.5V @ 250µA	103 nC @ 10 V	3600 pF @ 25 V	±20V	-	357W (Tc)	24mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
UF3C120040K3S	Qorvo	SICFET N-CH 1200V 65A TO247-3 FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 429W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock107,436	SiCFET (Cascode SiCJFET)	1200 V	65A (Tc)	12V	6V @ 10mA	51 nC @ 15 V	1500 pF @ 100 V	±25V	-	429W (Tc)	45mOhm @ 40A, 12V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
2SJ471-E	Renesas Electronics Corporation	POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJS6461_S1_00001	Panjit International Inc.	60V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	Package: -	Stock56,436	MOSFET (Metal Oxide)	60 V	3.2A (Ta)	4.5V, 10V	2.5V @ 250µA	10 nC @ 10 V	785 pF @ 30 V	±20V	-	2W (Ta)	110mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
SIDR578EP-T1-RE3	Vishay Siliconix	N-CHANNEL 150 V (D-S) 175C MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	17.4A (Ta), 78A (Tc)	7.5V, 10V	4V @ 250µA	49 nC @ 10 V	2540 pF @ 75 V	±20V	-	7.5W (Ta), 150W (Tc)	8.8mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8