Page 1441 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7326D2TR
Infineon Technologies

MOSFET P-CH 30V 3.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock772,968
AOD208
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 18A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock334,272
IXTP200N085T
IXYS

MOSFET N-CH 85V 200A TO-220

Package: TO-220-3

Stock6,848
NTMFS5C410NLTWFT3G
ON Semiconductor

MOSFET N-CH 40V 312A SO8FL

Package: 8-PowerTDFN

Stock3,792
XP151A12A2MR
Torex Semiconductor Ltd

MOSFET N-CH 20V 1A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,002,560
NTHD4P02FT1G
ON Semiconductor

MOSFET P-CH 20V 2.2A CHIPFET

Package: 8-SMD, Flat Lead

Stock3,878,916
TSM2306CX RFG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

Package: TO-236-3, SC-59, SOT-23-3

Stock4,704
CPC3909ZTR
IXYS Integrated Circuits Division

MOSFET N-CH 400V SOT-223

Package: TO-261-4, TO-261AA

Stock4,576
AOT10N60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 10A TO-220

Package: TO-220-3

Stock6,252
SUD19P06-60-E3
Vishay Siliconix

MOSFET P-CH 60V 18.3A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock356,664
NTD4858NT4G
ON Semiconductor

MOSFET N-CH 25V 11.2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,757,084
IRLMS5703TRPBF
Infineon Technologies

MOSFET P-CH 30V 2.4A 6-TSOP

Package: SOT-23-6

Stock1,238,496
DMN6140L-7
Diodes Incorporated

MOSFET N-CH 60V 1.6A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock295,998
FDD6685
Fairchild/ON Semiconductor

MOSFET P-CH 30V 11A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock224,244
SQ3419AEEV-T1_BE3
Vishay Siliconix

P-CHANNEL 40-V (D-S) 175C MOSFET

Package: -

Stock9,000
PSMN1R5-40YSDX
Nexperia USA Inc.

MOSFET N-CH 40V 240A LFPAK56

Package: -

Stock12,315
TSM850N06CX
Taiwan Semiconductor Corporation

60V, 3A, SINGLE N-CHANNEL POWER

Package: -

Request a Quote
TSM060NB06CZ-C0G
Taiwan Semiconductor Corporation

60V, 111A, SINGLE N-CHANNEL POWE

Package: -

Stock11,910
BSC900N20NS3GATMA1
Infineon Technologies

MOSFET N-CH 200V 15.2A TDSON-8

Package: -

Request a Quote
DMTH43M8LFVW-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7326D2TR	Infineon Technologies	MOSFET P-CH 30V 3.6A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock772,968	MOSFET (Metal Oxide)	30V	3.6A (Ta)	4.5V, 10V	1V @ 250µA	25nC @ 10V	440pF @ 25V	±20V	Schottky Diode (Isolated)	2W (Ta)	100 mOhm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AOD208	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 18A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 62W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock334,272	MOSFET (Metal Oxide)	30V	18A (Ta), 54A (Tc)	4.5V, 10V	2.3V @ 250µA	35nC @ 10V	2210pF @ 15V	±20V	-	2.5W (Ta), 62W (Tc)	4.4 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTP200N085T	IXYS	MOSFET N-CH 85V 200A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,848	MOSFET (Metal Oxide)	85V	200A (Tc)	10V	4V @ 250µA	152nC @ 10V	7600pF @ 25V	±20V	-	480W (Tc)	5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTMFS5C410NLTWFT3G	ON Semiconductor	MOSFET N-CH 40V 312A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8862pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,792	MOSFET (Metal Oxide)	40V	50A (Ta), 330A (Tc)	4.5V, 10V	2V @ 250µA	143nC @ 10V	8862pF @ 25V	±20V	-	3.8W (Ta), 167W (Tc)	0.9 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
XP151A12A2MR	Torex Semiconductor Ltd	MOSFET N-CH 20V 1A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,002,560	MOSFET (Metal Oxide)	20V	1A (Ta)	2.5V, 4.5V	-	-	180pF @ 10V	±12V	-	500mW (Ta)	100 mOhm @ 500mA, 4.5V	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
NTHD4P02FT1G	ON Semiconductor	MOSFET P-CH 20V 2.2A CHIPFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Tj) Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock3,878,916	MOSFET (Metal Oxide)	20V	2.2A (Tj)	2.5V, 4.5V	1.2V @ 250µA	6nC @ 4.5V	300pF @ 10V	±12V	Schottky Diode (Isolated)	1.1W (Tj)	155 mOhm @ 2.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET?	8-SMD, Flat Lead
TSM2306CX RFG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, TRENC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 57 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,704	MOSFET (Metal Oxide)	30V	3.5A (Ta)	4.5V, 10V	3V @ 250µA	5.5nC @ 4.5V	555pF @ 15V	±20V	-	1.25W (Ta)	57 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
CPC3909ZTR	IXYS Integrated Circuits Division	MOSFET N-CH 400V SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): 15V FET Feature: Depletion Mode Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9 Ohm @ 300mA, 0V Operating Temperature: -40°C ~ 110°C (TA) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock4,576	MOSFET (Metal Oxide)	400V	300mA (Ta)	0V	-	-	-	15V	Depletion Mode	2.5W (Ta)	9 Ohm @ 300mA, 0V	-40°C ~ 110°C (TA)	Surface Mount	SOT-223	TO-261-4, TO-261AA
AOT10N60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 10A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,252	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4.5V @ 250µA	40nC @ 10V	1600pF @ 25V	±30V	-	250W (Tc)	750 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
SUD19P06-60-E3	Vishay Siliconix	MOSFET P-CH 60V 18.3A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 38.5W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock356,664	MOSFET (Metal Oxide)	60V	18.3A (Tc)	4.5V, 10V	3V @ 250µA	40nC @ 10V	1710pF @ 25V	±20V	-	2.3W (Ta), 38.5W (Tc)	60 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4858NT4G	ON Semiconductor	MOSFET N-CH 25V 11.2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1563pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,757,084	MOSFET (Metal Oxide)	25V	11.2A (Ta), 73A (Tc)	4.5V, 10V	2.5V @ 250µA	19.2nC @ 4.5V	1563pF @ 12V	±20V	-	1.3W (Ta), 54.5W (Tc)	6.2 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLMS5703TRPBF	Infineon Technologies	MOSFET P-CH 30V 2.4A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro6?(TSOP-6) Package / Case: SOT-23-6	Package: SOT-23-6	Stock1,238,496	MOSFET (Metal Oxide)	30V	2.4A (Ta)	4.5V, 10V	1V @ 250µA	11nC @ 10V	170pF @ 25V	±20V	-	1.7W (Ta)	180 mOhm @ 1.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)	SOT-23-6
DMN6140L-7	Diodes Incorporated	MOSFET N-CH 60V 1.6A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock295,998	MOSFET (Metal Oxide)	60V	1.6A (Ta)	4.5V, 10V	3V @ 250µA	8.6nC @ 10V	315pF @ 40V	±20V	-	700mW (Ta)	140 mOhm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
FDD6685	Fairchild/ON Semiconductor	MOSFET P-CH 30V 11A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 52W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock224,244	MOSFET (Metal Oxide)	30V	11A (Ta), 40A (Tc)	4.5V, 10V	3V @ 250µA	24nC @ 5V	1715pF @ 15V	±25V	-	52W (Ta)	20 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
SQ3419AEEV-T1_BE3	Vishay Siliconix	P-CHANNEL 40-V (D-S) 175C MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 20 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock9,000	MOSFET (Metal Oxide)	40 V	6.9A (Tc)	4.5V, 10V	2.5V @ 250µA	12.5 nC @ 4.5 V	975 pF @ 20 V	±12V	-	5W (Tc)	61mOhm @ 2.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
PSMN1R5-40YSDX	Nexperia USA Inc.	MOSFET N-CH 40V 240A LFPAK56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 240A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 238W (Ta) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: -	Stock12,315	MOSFET (Metal Oxide)	40 V	240A (Ta)	10V	3.6V @ 1mA	99 nC @ 10 V	7752 pF @ 20 V	±20V	Schottky Diode (Body)	238W (Ta)	1.5mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
TSM850N06CX	Taiwan Semiconductor Corporation	60V, 3A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	2.3A (Ta), 3A (Tc)	4.5V, 10V	2.5V @ 250µA	9.5 nC @ 10 V	529 pF @ 30 V	±20V	-	1W (Ta), 1.7W (Tc)	85mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
TSM060NB06CZ-C0G	Taiwan Semiconductor Corporation	60V, 111A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 111A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6842 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock11,910	MOSFET (Metal Oxide)	60 V	13A (Ta), 111A (Tc)	7V, 10V	4V @ 250µA	103 nC @ 10 V	6842 pF @ 30 V	±20V	-	2W (Ta), 156W (Tc)	6mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
BSC900N20NS3GATMA1	Infineon Technologies	MOSFET N-CH 200V 15.2A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 7.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-5 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	15.2A (Tc)	10V	4V @ 30µA	11.6 nC @ 10 V	920 pF @ 100 V	±20V	-	62.5W (Tc)	90mOhm @ 7.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-5	8-PowerTDFN
DMTH43M8LFVW-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2737 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	23A (Ta), 96A (Tc)	4.5V, 10V	2.5V @ 250µA	36.9 nC @ 10 V	2737 pF @ 20 V	±20V	-	3.6W (Ta), 65W (Tc)	4.3mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN
XP2306GN	YAGEO XSEMI	MOSFET N-CH 20V 5.3A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.38W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock2,988	MOSFET (Metal Oxide)	20 V	5.3A (Ta)	2.5V, 10V	1.25V @ 250µA	8.7 nC @ 4.5 V	603 pF @ 15 V	±12V	-	1.38W (Ta)	30mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SIS698DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 6.9A PPAK1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 19.8W (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	6.9A (Tc)	6V, 10V	3.5V @ 250µA	8 nC @ 10 V	210 pF @ 50 V	±20V	-	19.8W (Tc)	195mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
STWA20N95DK5	STMicroelectronics	MOSFET N-CH 950V 18A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 50.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	950 V	18A (Tc)	10V	5V @ 100µA	50.7 nC @ 10 V	1600 pF @ 100 V	±30V	-	250W (Tc)	330mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3
XPW4R10ANB-L1XHQ	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 70A AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 70A Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Supplier Device Package: 8-DSOP Advance Package / Case: 8-PowerVDFN	Package: -	Stock47,964	MOSFET (Metal Oxide)	100 V	70A	6V, 10V	3.5V @ 1mA	75 nC @ 10 V	4970 pF @ 10 V	±20V	-	170W (Tc)	4.1mOhm @ 35A, 10V	-55°C ~ 175°C	Surface Mount	8-DSOP Advance	8-PowerVDFN
C3M0032120J1-TR	Wolfspeed, Inc.	SIC, MOSFET, 32M, 1200V, TO-263- FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3424 pF @ 1000 V Vgs (Max): +15V, -4V FET Feature: - Power Dissipation (Max): 277W (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 41.4A, 15V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock2,400	SiC (Silicon Carbide Junction Transistor)	1200 V	68A (Tc)	15V	3.6V @ 11.5mA	111 nC @ 15 V	3424 pF @ 1000 V	+15V, -4V	-	277W (Tc)	43mOhm @ 41.4A, 15V	-40°C ~ 150°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
2SJ616-TD-E	onsemi	2SJ616 - P CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVTFS024N06CTAG	onsemi	MOSFET N-CH 60V 7A/24A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	7A (Ta), 24A (Tc)	10V	4V @ 20µA	5.7 nC @ 10 V	333 pF @ 30 V	±20V	-	2.5W (Ta), 28W (Tc)	22.6mOhm @ 3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
IRF840PBF-BE3	Vishay Siliconix	MOSFET N-CH 500V 8A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock10,107	MOSFET (Metal Oxide)	500 V	8A (Tc)	10V	4V @ 250µA	63 nC @ 10 V	1300 pF @ 25 V	±20V	-	125W (Tc)	850mOhm @ 4.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3