Page 1444 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFR1010ZTRRPBF
Infineon Technologies

MOSFET N-CH 55V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,648
BSO201SPNTMA1
Infineon Technologies

MOSFET P-CH 20V 14.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,912
CPH3456-TL-H
ON Semiconductor

MOSFET N-CH 20V 3.5A CPH3

Package: TO-236-3, SC-59, SOT-23-3

Stock2,672
GP1M006A065F
Global Power Technologies Group

MOSFET N-CH 650V 5.5A TO220F

Package: TO-220-3 Full Pack

Stock3,504
NTMS4107NR2G
ON Semiconductor

MOSFET N-CH 30V 11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock781,416
FQB27N25TM_AM002
Fairchild/ON Semiconductor

MOSFET N-CH 250V 25.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,072
FQD6N50CTF
Fairchild/ON Semiconductor

MOSFET N-CH 500V 4.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,080
IRF740LCSTRL
Vishay Siliconix

MOSFET N-CH 400V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,488
IRF2903ZPBF
Infineon Technologies

MOSFET N-CH 30V 75A TO-220AB

Package: TO-220-3

Stock7,212
IRFH7110TRPBF
Infineon Technologies

MOSFET N CH 100V 11A PQFN 5X6

Package: 8-TQFN Exposed Pad

Stock3,264
FCA47N60_F109
Fairchild/ON Semiconductor

MOSFET N-CH 600V 47A TO-3P

Package: TO-3P-3, SC-65-3

Stock3,248
IXTY08N100P
IXYS

MOSFET N-CH 1000V 800MA TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,568
TPN2R503NC,L1Q
Toshiba Semiconductor and Storage

MOSFET N CH 30V 40A 8TSON-ADV

Package: 8-PowerVDFN

Stock5,488
IPB80N06S209ATMA2
Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,952
BSR302NL6327HTSA1
Infineon Technologies

MOSFET N-CH 30V 3.7A SC-59

Package: TO-236-3, SC-59, SOT-23-3

Stock46,476
IXTA64N10L2
IXYS

N-CHANNEL: LINEAR POWER MOSFETS

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,320
IRF6218STRLPBF
Infineon Technologies

MOSFET P-CH 150V 27A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock154,536
MTM231232LBF
Panasonic Electronic Components

MOSFET P-CH 20V 3A

Package: SC-70, SOT-323

Stock373,800
2SK3299B-S19-AY
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
SIA472EDJ-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 12A PPAK SC70-6

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFR1010ZTRRPBF	Infineon Technologies	MOSFET N-CH 55V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 42A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,648	MOSFET (Metal Oxide)	55V	42A (Tc)	10V	4V @ 100µA	95nC @ 10V	2840pF @ 25V	±20V	-	140W (Tc)	7.5 mOhm @ 42A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BSO201SPNTMA1	Infineon Technologies	MOSFET P-CH 20V 14.9A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 128nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5962pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 14.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,912	MOSFET (Metal Oxide)	20V	14.9A (Ta)	2.5V, 4.5V	1.2V @ 250µA	128nC @ 4.5V	5962pF @ 15V	±12V	-	2.5W (Ta)	8 mOhm @ 14.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
CPH3456-TL-H	ON Semiconductor	MOSFET N-CH 20V 3.5A CPH3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 71 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CPH Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,672	MOSFET (Metal Oxide)	20V	3.5A (Ta)	1.8V, 4.5V	-	2.8nC @ 4.5V	260pF @ 10V	±12V	-	1W (Ta)	71 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	3-CPH	TO-236-3, SC-59, SOT-23-3
GP1M006A065F	Global Power Technologies Group	MOSFET N-CH 650V 5.5A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,504	MOSFET (Metal Oxide)	650V	5.5A (Tc)	10V	4V @ 250µA	17nC @ 10V	1177pF @ 25V	±30V	-	39W (Tc)	1.6 Ohm @ 2.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
NTMS4107NR2G	ON Semiconductor	MOSFET N-CH 30V 11A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 930mW (Ta) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock781,416	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	2.5V @ 250µA	45nC @ 4.5V	6000pF @ 15V	±20V	-	930mW (Ta)	4.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
FQB27N25TM_AM002	Fairchild/ON Semiconductor	MOSFET N-CH 250V 25.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 25.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 180W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,072	MOSFET (Metal Oxide)	250V	25.5A (Tc)	10V	5V @ 250µA	65nC @ 10V	2450pF @ 25V	±30V	-	3.13W (Ta), 180W (Tc)	110 mOhm @ 12.75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQD6N50CTF	Fairchild/ON Semiconductor	MOSFET N-CH 500V 4.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,080	MOSFET (Metal Oxide)	500V	4.5A (Tc)	10V	4V @ 250µA	25nC @ 10V	700pF @ 25V	±30V	-	2.5W (Ta), 61W (Tc)	1.2 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF740LCSTRL	Vishay Siliconix	MOSFET N-CH 400V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,488	MOSFET (Metal Oxide)	400V	10A (Tc)	10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	±30V	-	-	550 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF2903ZPBF	Infineon Technologies	MOSFET N-CH 30V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6320pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,212	MOSFET (Metal Oxide)	30V	75A (Tc)	10V	4V @ 150µA	240nC @ 10V	6320pF @ 25V	±20V	-	290W (Tc)	2.4 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFH7110TRPBF	Infineon Technologies	MOSFET N CH 100V 11A PQFN 5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-TQFN Exposed Pad	Package: 8-TQFN Exposed Pad	Stock3,264	MOSFET (Metal Oxide)	100V	11A (Ta), 58A (Tc)	10V	4V @ 100µA	87nC @ 10V	3240pF @ 25V	±20V	-	3.6W (Ta), 104W (Tc)	13.5 mOhm @ 35A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-TQFN Exposed Pad
FCA47N60_F109	Fairchild/ON Semiconductor	MOSFET N-CH 600V 47A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 23.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock3,248	MOSFET (Metal Oxide)	600V	47A (Tc)	10V	5V @ 250µA	270nC @ 10V	8000pF @ 25V	±30V	-	417W (Tc)	70 mOhm @ 23.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
IXTY08N100P	IXYS	MOSFET N-CH 1000V 800MA TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 20 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,568	MOSFET (Metal Oxide)	1000V	800mA (Tc)	10V	4V @ 50µA	11.3nC @ 10V	240pF @ 25V	±20V	-	42W (Tc)	20 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
TPN2R503NC,L1Q	Toshiba Semiconductor and Storage	MOSFET N CH 30V 40A 8TSON-ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock5,488	MOSFET (Metal Oxide)	30V	40A (Ta)	4.5V, 10V	2.3V @ 500µA	40nC @ 10V	2230pF @ 15V	±20V	-	700mW (Ta), 35W (Tc)	2.5 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	8-TSON Advance (3.3x3.3)	8-PowerVDFN
IPB80N06S209ATMA2	Infineon Technologies	MOSFET N-CH 55V 80A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 125µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,952	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 125µA	80nC @ 10V	2360pF @ 25V	±20V	-	190W (Tc)	8.8 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSR302NL6327HTSA1	Infineon Technologies	MOSFET N-CH 30V 3.7A SC-59 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SC-59 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock46,476	MOSFET (Metal Oxide)	30V	3.7A (Ta)	4.5V, 10V	2V @ 30µA	6.6nC @ 5V	750pF @ 15V	±20V	-	500mW (Ta)	23 mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SC-59	TO-236-3, SC-59, SOT-23-3
IXTA64N10L2	IXYS	N-CHANNEL: LINEAR POWER MOSFETS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 64A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3620pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 32 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,320	MOSFET (Metal Oxide)	100V	64A	10V	4.5V @ 250µA	100nC @ 10V	3620pF @ 25V	±30V	-	357W (Tc)	32 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF6218STRLPBF	Infineon Technologies	MOSFET P-CH 150V 27A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock154,536	MOSFET (Metal Oxide)	150V	27A (Tc)	10V	5V @ 250µA	110nC @ 10V	2210pF @ 25V	±20V	-	250W (Tc)	150 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MTM231232LBF	Panasonic Electronic Components	MOSFET P-CH 20V 3A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 1A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 (SOT323) Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock373,800	MOSFET (Metal Oxide)	20V	3A (Ta)	2.5V, 4.5V	1.3V @ 1mA	-	1000pF @ 10V	±10V	-	500mW (Ta)	55 mOhm @ 1A, 4V	150°C (TJ)	Surface Mount	SC-70-3 (SOT323)	SC-70, SOT-323
2SK3299B-S19-AY	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIA472EDJ-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 12A PPAK SC70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 19.2W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	12A (Tc)	2.5V, 4.5V	1.5V @ 250µA	36 nC @ 10 V	1265 pF @ 15 V	±12V	-	19.2W (Tc)	20mOhm @ 10.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Single	PowerPAK® SC-70-6
APT50M75JLL	Microchip Technology	MOSFET N-CH 500V 51A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	51A (Tc)	-	5V @ 2.5mA	125 nC @ 10 V	5590 pF @ 25 V	-	-	-	75mOhm @ 25.5A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
PJQ4466AP-AU_R2_000A1	Panjit International Inc.	60V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 53W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	6A (Ta), 33A (Tc)	4.5V, 10V	2.5V @ 250µA	28 nC @ 10 V	1680 pF @ 20 V	±20V	-	2.4W (Ta), 53W (Tc)	21mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN3333-8	8-PowerVDFN
STF7N60DM2	STMicroelectronics	MOSFET N-CH 600V 6A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: -	Stock5,982	MOSFET (Metal Oxide)	600 V	6A (Tc)	10V	4.75V @ 250µA	7.5 nC @ 10 V	324 pF @ 100 V	±25V	-	25W (Tc)	900mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
APT20M18LVRG	Microchip Technology	MOSFET N-CH 200V 100A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	100A (Tc)	-	4V @ 2.5mA	330 nC @ 10 V	9880 pF @ 25 V	-	-	-	18mOhm @ 50A, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
RQA0011DNS-G0	Renesas Electronics Corporation	MOSFET N-CH 16V 3.8A 2HWSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16 V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 750mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 0 V Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 2-HWSON (5x4) Package / Case: 2-DFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	16 V	3.8A (Ta)	-	750mV @ 1mA	-	102 pF @ 0 V	±5V	-	15W (Tc)	-	150°C	Surface Mount	2-HWSON (5x4)	2-DFN Exposed Pad
NVHL045N065SC1	onsemi	SIC MOS TO247-3L 650V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 4.3V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V Vgs (Max): +22V, -8V FET Feature: - Power Dissipation (Max): 291W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	66A (Tc)	15V, 18V	4.3V @ 8mA	105 nC @ 18 V	1870 pF @ 325 V	+22V, -8V	-	291W (Tc)	50mOhm @ 25A, 18V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
PJD50N04_L2_00001	Panjit International Inc.	40V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock5,850	MOSFET (Metal Oxide)	40 V	9.6A (Ta), 50A (Tc)	4.5V, 10V	2.5V @ 250µA	22 nC @ 10 V	1258 pF @ 25 V	±20V	-	2W (Ta), 54W (Tc)	9.5mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
SQJ431AEP-T1_GE3	Vishay Siliconix	MOSFET P-CH 200V 9.4A PPAK SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	9.4A (Tc)	6V, 10V	3.5V @ 250µA	85 nC @ 10 V	3700 pF @ 25 V	±20V	-	68W (Tc)	305mOhm @ 3.8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8