Page 1451 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFC4668D
Infineon Technologies

MOSFET N-CH WAFER

Package: -

Stock4,384
IPP052NE7N3GHKSA1
Infineon Technologies

MOSFET N-CH 75V 80A TO220-3

Package: TO-220-3

Stock4,496
IRLR024ZTRPBF
Infineon Technologies

MOSFET N-CH 55V 16A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock42,120
IPU09N03LA G
Infineon Technologies

MOSFET N-CH 25V 50A TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,616
IXTH182N055T
IXYS

MOSFET N-CH 55V 182A TO-247

Package: TO-247-3

Stock5,696
PHW80NQ10T,127
NXP

MOSFET N-CH 100V 80A SOT429

Package: TO-247-3

Stock7,360
TK13A50DA(STA4,Q,M
Toshiba Semiconductor and Storage

MOSFET N-CH 500V 12.5A TO-220SIS

Package: TO-220-3 Full Pack

Stock5,776
AOT286L
Alpha & Omega Semiconductor Inc.

MOSFET N CH 80V 13A TO220

Package: TO-220-3

Stock3,616
DMPH1006UPSQ-13
Diodes Incorporated

MOSFET BVDSS: 8V 24V POWERDI5060

Package: 8-PowerTDFN

Stock7,968
NTMFS4C05NAT1G
ON Semiconductor

MOSFET N-CH 30V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock5,920
SCH1433-TL-H
ON Semiconductor

MOSFET N-CH 20V 3.5A SCH6

Package: SOT-563, SOT-666

Stock72,720
SIA447DJ-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 12A SC-70-6L

Package: PowerPAK? SC-70-6

Stock29,376
IPB60R380C6
Infineon Technologies

MOSFET N-CH 600V 10.6A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock489,096
APT43F60B2
Microsemi Corporation

MOSFET N-CH 600V 45A T-MAX

Package: TO-247-3 Variant

Stock7,040
PSMN4R3-80ES,127
Nexperia USA Inc.

MOSFET N-CH 80V 120A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock10,908
STP18N60M2
STMicroelectronics

MOSFET N-CH 600V TO-220

Package: TO-220-3

Stock9,648
BUK9237-55A,118
Nexperia USA Inc.

MOSFET N-CH 55V 32A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock22,602
STW15N80K5
STMicroelectronics

MOSFET N CH 800V 14A TO-247

Package: TO-247-3

Stock6,060
CXDM4060P TR
Central Semiconductor Corp

MOSFET P-CH 40V 6A SOT-89

Package: TO-243AA

Stock29,682
DMP10H400SE-13
Diodes Incorporated

MOSFET P-CH 100V 2.3A/6A SOT223

Package: TO-261-4, TO-261AA

Stock7,600

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFC4668D	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,384	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP052NE7N3GHKSA1	Infineon Technologies	MOSFET N-CH 75V 80A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.8V @ 91µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 37.5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock4,496	MOSFET (Metal Oxide)	75V	80A (Tc)	10V	3.8V @ 91µA	68nC @ 10V	4750pF @ 37.5V	±20V	-	150W (Tc)	5.2 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IRLR024ZTRPBF	Infineon Technologies	MOSFET N-CH 55V 16A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 58 mOhm @ 9.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock42,120	MOSFET (Metal Oxide)	55V	16A (Tc)	4.5V, 10V	3V @ 250µA	9.9nC @ 5V	380pF @ 25V	±16V	-	35W (Tc)	58 mOhm @ 9.6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPU09N03LA G	Infineon Technologies	MOSFET N-CH 25V 50A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1642pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,616	MOSFET (Metal Oxide)	25V	50A (Tc)	4.5V, 10V	2V @ 20µA	13nC @ 5V	1642pF @ 15V	±20V	-	63W (Tc)	8.8 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
IXTH182N055T	IXYS	MOSFET N-CH 55V 182A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 182A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock5,696	MOSFET (Metal Oxide)	55V	182A (Tc)	10V	4V @ 250µA	114nC @ 10V	4850pF @ 25V	±20V	-	360W (Tc)	5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
PHW80NQ10T,127	NXP	MOSFET N-CH 100V 80A SOT429 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4720pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,360	MOSFET (Metal Oxide)	100V	80A (Tc)	10V	4V @ 1mA	109nC @ 10V	4720pF @ 25V	±20V	-	263W (Tc)	15 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
TK13A50DA(STA4,Q,M	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 12.5A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 470 mOhm @ 6.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,776	MOSFET (Metal Oxide)	500V	12.5A (Ta)	10V	4V @ 1mA	28nC @ 10V	1550pF @ 25V	±30V	-	45W (Tc)	470 mOhm @ 6.3A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
AOT286L	Alpha & Omega Semiconductor Inc.	MOSFET N CH 80V 13A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3142pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock3,616	MOSFET (Metal Oxide)	80V	13A (Ta), 70A (Tc)	6V, 10V	3.3V @ 250µA	63nC @ 10V	3142pF @ 40V	±20V	-	2.1W (Ta), 167W (Tc)	6 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
DMPH1006UPSQ-13	Diodes Incorporated	MOSFET BVDSS: 8V 24V POWERDI5060 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 6334pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.2W Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,968	MOSFET (Metal Oxide)	12V	80A (Tc)	2.5V, 4.5V	1V @ 250µA	124nC @ 8V	6334pF @ 10V	±8V	-	3.2W	6 mOhm @ 15A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
NTMFS4C05NAT1G	ON Semiconductor	MOSFET N-CH 30V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21.7A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1972pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.57W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock5,920	MOSFET (Metal Oxide)	30V	21.7A (Ta), 78A (Tc)	4.5V, 10V	2.2V @ 250µA	30nC @ 10V	1972pF @ 15V	±20V	-	2.57W (Ta), 33W (Tc)	3.4 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
SCH1433-TL-H	ON Semiconductor	MOSFET N-CH 20V 3.5A SCH6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 64 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-SCH Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock72,720	MOSFET (Metal Oxide)	20V	3.5A (Ta)	1.8V, 4.5V	-	2.8nC @ 4.5V	260pF @ 10V	±10V	-	800mW (Ta)	64 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	6-SCH	SOT-563, SOT-666
SIA447DJ-T1-GE3	Vishay Siliconix	MOSFET P-CH 12V 12A SC-70-6L FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-70-6 Single Package / Case: PowerPAK? SC-70-6	Package: PowerPAK? SC-70-6	Stock29,376	MOSFET (Metal Oxide)	12V	12A (Tc)	1.5V, 4.5V	850mV @ 250µA	80nC @ 8V	2880pF @ 6V	±8V	-	3.5W (Ta), 19W (Tc)	13.5 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Single	PowerPAK? SC-70-6
IPB60R380C6	Infineon Technologies	MOSFET N-CH 600V 10.6A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock489,096	MOSFET (Metal Oxide)	600V	10.6A (Tc)	10V	3.5V @ 320µA	32nC @ 10V	700pF @ 100V	±20V	-	83W (Tc)	380 mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APT43F60B2	Microsemi Corporation	MOSFET N-CH 600V 45A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8590pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX? [B2] Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock7,040	MOSFET (Metal Oxide)	600V	45A (Tc)	10V	5V @ 2.5mA	215nC @ 10V	8590pF @ 25V	±30V	-	780W (Tc)	150 mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX? [B2]	TO-247-3 Variant
PSMN4R3-80ES,127	Nexperia USA Inc.	MOSFET N-CH 80V 120A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8161pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock10,908	MOSFET (Metal Oxide)	80V	120A (Tc)	10V	4V @ 1mA	111nC @ 10V	8161pF @ 40V	±20V	-	306W (Tc)	4.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STP18N60M2	STMicroelectronics	MOSFET N-CH 600V TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 791pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock9,648	MOSFET (Metal Oxide)	600V	13A (Tc)	10V	4V @ 250µA	21.5nC @ 10V	791pF @ 100V	±25V	-	110W (Tc)	280 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
BUK9237-55A,118	Nexperia USA Inc.	MOSFET N-CH 55V 32A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1236pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 77W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock22,602	MOSFET (Metal Oxide)	55V	32A (Tc)	5V, 10V	2V @ 1mA	17.6nC @ 5V	1236pF @ 25V	±15V	-	77W (Tc)	33 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STW15N80K5	STMicroelectronics	MOSFET N CH 800V 14A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 375 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,060	MOSFET (Metal Oxide)	800V	14A (Tc)	10V	5V @ 100µA	32nC @ 10V	1100pF @ 100V	±30V	-	190W (Tc)	375 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
CXDM4060P TR	Central Semiconductor Corp	MOSFET P-CH 40V 6A SOT-89 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): 25V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	Package: TO-243AA	Stock29,682	MOSFET (Metal Oxide)	40V	6A (Ta)	4.5V, 10V	3V @ 250µA	6.5nC @ 4.5V	750pF @ 25V	25V	-	1.2W (Ta)	65 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-89	TO-243AA
DMP10H400SE-13	Diodes Incorporated	MOSFET P-CH 100V 2.3A/6A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1239pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 13.7W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock7,600	MOSFET (Metal Oxide)	100V	2.3A (Ta), 6A (Tc)	4.5V, 10V	3V @ 250µA	17.5nC @ 10V	1239pF @ 25V	±20V	-	2W (Ta), 13.7W (Tc)	250 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
MMIX1F520N075T2	IXYS	MOSFET N-CH 75V 500A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 500A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 545nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 24-SMPD Package / Case: 24-PowerSMD, 21 Leads	Package: 24-PowerSMD, 21 Leads	Stock16,308	MOSFET (Metal Oxide)	75V	500A (Tc)	10V	5V @ 8mA	545nC @ 10V	41000pF @ 25V	±20V	-	830W (Tc)	1.6 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	24-SMPD	24-PowerSMD, 21 Leads
IGLD60R190D1SAUMA1	Infineon Technologies	GAN HV PG-LSON-8 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 960µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-LSON-8-1 Package / Case: 8-LDFN Exposed Pad	Package: -	Request a Quote	GaNFET (Gallium Nitride)	600 V	10A (Tc)	-	1.6V @ 960µA	-	157 pF @ 400 V	-10V	-	62.5W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-LSON-8-1	8-LDFN Exposed Pad
2SK3378ENTL-E	Renesas Electronics Corporation	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDD9507L-F085	onsemi	MOSFET P-CH 40V 100A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 20 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 227W (Ta) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	100A (Tc)	4.5V, 10V	3V @ 250µA	130 nC @ 10 V	6250 pF @ 20 V	±16V	-	227W (Ta)	4.4mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
2SK3116B-S19-AY	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCAC38N10Y-TP	Micro Commercial Co	N-CHANNEL MOSFET, DFN5060 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 38A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1051 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 59W (Tj) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Stock14,370	MOSFET (Metal Oxide)	100 V	38A	4.5V, 10V	2.5V @ 250µA	16 nC @ 10 V	1051 pF @ 50 V	±20V	-	59W (Tj)	17.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
SQM40081EL_GE3	Vishay Siliconix	MOSFET P-CH 40V 50A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock3,315	MOSFET (Metal Oxide)	40 V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	230 nC @ 10 V	9950 pF @ 25 V	±20V	-	107W (Tc)	8.5mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AOB66918L	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 10W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	33A (Ta), 120A (Tc)	8V, 10V	3.7V @ 250µA	105 nC @ 10 V	6500 pF @ 50 V	±20V	-	10W (Ta), 375W (Tc)	5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB