Page 1454 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFZ46NSPBF
Infineon Technologies

MOSFET N-CH 55V 53A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock83,448
IRF3711S
Infineon Technologies

MOSFET N-CH 20V 110A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock495,696
GP1M010A080N
Global Power Technologies Group

MOSFET N-CH 900V 10A TO3PN

Package: TO-3P-3, SC-65-3

Stock5,504
FDB5690
Fairchild/ON Semiconductor

MOSFET N-CH 60V 32A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock15,492
IPB240N04S41R0ATMA1
Infineon Technologies

MOSFET N-CH TO263-7

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock6,080
IPN65R1K5CEATMA1
Infineon Technologies

CONSUMER

Package: -

Stock3,456
SI4874BDY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 12A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock15,000
NTMFS4C50NT3G
ON Semiconductor

MOSFET N-CH 30V 46A SO8FL

Package: 8-PowerTDFN

Stock4,800
IPA60R190P6
Infineon Technologies

MOSFET N-CH 600V 9.5A TO220-FP

Package: TO-220-3 Full Pack

Stock4,416
FQPF2N60C
Fairchild/ON Semiconductor

MOSFET N-CH 600V 2A TO-220F

Package: TO-220-3 Full Pack

Stock275,220
HUF75852G3
Fairchild/ON Semiconductor

MOSFET N-CH 150V 75A TO-247

Package: TO-247-3

Stock8,628
FDD5670
Fairchild/ON Semiconductor

MOSFET N-CH 60V 52A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock304,356
IRFR3708TRPBF
Infineon Technologies

MOSFET N-CH 30V 61A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock144,060
BSC060N10NS3GATMA1
Infineon Technologies

MOSFET N-CH 100V 90A TDSON-8

Package: 8-PowerTDFN

Stock692,478
STW11NM80
STMicroelectronics

MOSFET N-CH 800V 11A TO-247

Package: TO-247-3

Stock12,732
STW6N120K3
STMicroelectronics

MOSFET N-CH 1200V 6A TO-247

Package: TO-247-3

Stock46,836
NTE2384
NTE Electronics, Inc

MOSFET N-CHANNEL 900V 6A TO3

Package: -

Request a Quote
2SK3712-AZ
Renesas Electronics Corporation

SMALL SIGNAL N-CHANNEL MOSFET

Package: -

Request a Quote
SI2342DS-T1-GE3-ML
MOSLEADER

N 8V 6A SOT-23

Package: -

Request a Quote
SIHD6N65ET4-GE3
Vishay Siliconix

MOSFET N-CH 650V 7A TO252AA

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFZ46NSPBF	Infineon Technologies	MOSFET N-CH 55V 53A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1696pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 28A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock83,448	MOSFET (Metal Oxide)	55V	53A (Tc)	10V	4V @ 250µA	72nC @ 10V	1696pF @ 25V	±20V	-	3.8W (Ta), 107W (Tc)	16.5 mOhm @ 28A, 10V	-	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3711S	Infineon Technologies	MOSFET N-CH 20V 110A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock495,696	MOSFET (Metal Oxide)	20V	110A (Tc)	4.5V, 10V	3V @ 250µA	44nC @ 4.5V	2980pF @ 10V	±20V	-	3.1W (Ta), 120W (Tc)	6 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
GP1M010A080N	Global Power Technologies Group	MOSFET N-CH 900V 10A TO3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2336pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,504	MOSFET (Metal Oxide)	900V	10A (Tc)	10V	4V @ 250µA	53nC @ 10V	2336pF @ 25V	±30V	-	312W (Tc)	1.05 Ohm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FDB5690	Fairchild/ON Semiconductor	MOSFET N-CH 60V 32A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 16A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock15,492	MOSFET (Metal Oxide)	60V	32A (Tc)	6V, 10V	4V @ 250µA	33nC @ 10V	1120pF @ 25V	±20V	-	58W (Tc)	27 mOhm @ 16A, 10V	-65°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB240N04S41R0ATMA1	Infineon Technologies	MOSFET N-CH TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 221nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 17682pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 1 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock6,080	MOSFET (Metal Oxide)	40V	240A (Tc)	10V	4V @ 180µA	221nC @ 10V	17682pF @ 25V	±20V	-	231W (Tc)	1 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D2Pak (6 Leads + Tab)
IPN65R1K5CEATMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,456	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI4874BDY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 12A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock15,000	MOSFET (Metal Oxide)	30V	12A (Ta)	4.5V, 10V	3V @ 250µA	25nC @ 4.5V	3230pF @ 15V	±20V	-	1.6W (Ta)	7 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NTMFS4C50NT3G	ON Semiconductor	MOSFET N-CH 30V 46A SO8FL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,800	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
IPA60R190P6	Infineon Technologies	MOSFET N-CH 600V 9.5A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 630µ Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,416	MOSFET (Metal Oxide)	600V	20.2A (Tc)	10V	4.5V @ 630µ	37nC @ 10V	1750pF @ 100V	±20V	-	34W (Tc)	190 mOhm @ 7.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
FQPF2N60C	Fairchild/ON Semiconductor	MOSFET N-CH 600V 2A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 23W (Tc) Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock275,220	MOSFET (Metal Oxide)	600V	2A (Tc)	10V	4V @ 250µA	12nC @ 10V	235pF @ 25V	±30V	-	23W (Tc)	4.7 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
HUF75852G3	Fairchild/ON Semiconductor	MOSFET N-CH 150V 75A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 480nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 7690pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock8,628	MOSFET (Metal Oxide)	150V	75A (Tc)	10V	4V @ 250µA	480nC @ 20V	7690pF @ 25V	±20V	-	500W (Tc)	16 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
FDD5670	Fairchild/ON Semiconductor	MOSFET N-CH 60V 52A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 52A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2739pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock304,356	MOSFET (Metal Oxide)	60V	52A (Ta)	6V, 10V	4V @ 250µA	73nC @ 10V	2739pF @ 15V	±20V	-	3.8W (Ta), 83W (Tc)	15 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3708TRPBF	Infineon Technologies	MOSFET N-CH 30V 61A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock144,060	MOSFET (Metal Oxide)	30V	61A (Tc)	2.8V, 10V	2V @ 250µA	24nC @ 4.5V	2417pF @ 15V	±12V	-	87W (Tc)	12.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BSC060N10NS3GATMA1	Infineon Technologies	MOSFET N-CH 100V 90A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock692,478	MOSFET (Metal Oxide)	100V	14.9A (Ta), 90A (Tc)	6V, 10V	3.5V @ 90µA	68nC @ 10V	4900pF @ 50V	±20V	-	125W (Tc)	6 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
STW11NM80	STMicroelectronics	MOSFET N-CH 800V 11A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock12,732	MOSFET (Metal Oxide)	800V	11A (Tc)	10V	5V @ 250µA	43.6nC @ 10V	1630pF @ 25V	±30V	-	150W (Tc)	400 mOhm @ 5.5A, 10V	-65°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW6N120K3	STMicroelectronics	MOSFET N-CH 1200V 6A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock46,836	MOSFET (Metal Oxide)	1200V	6A (Tc)	10V	5V @ 100µA	34nC @ 10V	1050pF @ 100V	±30V	-	150W (Tc)	2.4 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
NTE2384	NTE Electronics, Inc	MOSFET N-CHANNEL 900V 6A TO3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AA, TO-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	900 V	6A (Tc)	10V	4.5V @ 250µA	130 nC @ 10 V	2600 pF @ 25 V	±20V	-	180W (Tc)	1.4Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3	TO-204AA, TO-3
2SK3712-AZ	Renesas Electronics Corporation	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI2342DS-T1-GE3-ML	MOSLEADER	N 8V 6A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHD6N65ET4-GE3	Vishay Siliconix	MOSFET N-CH 650V 7A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	7A (Tc)	10V	4V @ 250µA	48 nC @ 10 V	820 pF @ 100 V	±30V	-	78W (Tc)	600mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
CEN1233-TR	Central Semiconductor Corp	CEN1233 IC FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RFP6N50	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	6A (Tc)	10V	4V @ 1mA	-	1500 pF @ 25 V	±20V	-	75W (Tc)	1.25Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
TP65H070LDG	Transphorm	GANFET N-CH 650V 25A 3PQFN FET Type: N-Channel Technology: GaNFET (Cascode Gallium Nitride FET) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PQFN (8x8) Package / Case: 3-PowerDFN	Package: -	Request a Quote	GaNFET (Cascode Gallium Nitride FET)	650 V	25A (Tc)	10V	4.8V @ 700µA	9.3 nC @ 10 V	600 pF @ 400 V	±20V	-	96W (Tc)	85mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	3-PQFN (8x8)	3-PowerDFN
DIT095N08	Diotec Semiconductor	MOSFET TO220AB N 80V 0.0066OHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	95A (Tc)	10V	4V @ 250µA	109 nC @ 10 V	6800 pF @ 25 V	±20V	-	170W (Tc)	8mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
MSC015SMA070B4	Microchip Technology	TRANS SJT N-CH 700V 140A TO247-4 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 455W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Stock69	SiCFET (Silicon Carbide)	700 V	140A (Tc)	20V	2.4V @ 4mA	215 nC @ 20 V	4500 pF @ 700 V	+23V, -10V	-	455W (Tc)	19mOhm @ 40A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
XP261N70023R-G	Torex Semiconductor Ltd	MOSFET N-CH 60V 150MA SOT323-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323-3A Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	150mA (Ta)	4.5V, 10V	2.1V @ 250µA	0.38 nC @ 10 V	18 pF @ 20 V	±20V	-	350mW (Ta)	5Ohm @ 100mA, 10V	150°C (TJ)	Surface Mount	SOT-323-3A	SC-70, SOT-323
HUF76139P3	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	75A (Tc)	4.5V, 10V	3V @ 250µA	78 nC @ 10 V	2700 pF @ 25 V	±20V	-	165W (Tc)	7.5mOhm @ 75A, 10V	-40°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
AM2308NE-T1-PF-ML	MOSLEADER	Single N 30V 3.5A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-