Page 1453 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPI05N03LA
Infineon Technologies

MOSFET N-CH 25V 80A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,384
IRF7402TR
Infineon Technologies

MOSFET N-CH 20V 6.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock579,600
IRF3515L
Infineon Technologies

MOSFET N-CH 150V 41A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,744
AOI518
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 15A TO251A

Package: TO-251-3 Stub Leads, IPak

Stock3,472
2SK0664G0L
Panasonic Electronic Components

MOSFET N-CH 50V 100MA SMINI-3

Package: SC-85

Stock55,716
FQB19N10LTM
Fairchild/ON Semiconductor

MOSFET N-CH 100V 19A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,896
ZVP4424ASTOA
Diodes Incorporated

MOSFET P-CH 240V 0.2A TO92-3

Package: E-Line-3

Stock3,776
IPA65R380C6XKSA1
Infineon Technologies

MOSFET N-CH 650V 10.6A TO220

Package: TO-220-3 Full Pack

Stock7,744
IPB65R380C6ATMA1
Infineon Technologies

MOSFET N-CH 650V 10.6A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,528
IRFS3806PBF
Infineon Technologies

MOSFET N-CH 60V 43A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock402,168
IPD033N06NATMA1
Infineon Technologies

MOSFET N-CH TO-252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,928
IPD30N03S2L10ATMA1
Infineon Technologies

MOSFET N-CH 30V 30A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,016
STL140N4F7AG
STMicroelectronics

POWER TRANSISTORS

Package: 8-PowerSMD, Flat Leads

Stock5,296
IPA60R950C6
Infineon Technologies

MOSFET N-CH 600V 4.4A TO220-FP

Package: TO-220-3 Full Pack

Stock11,916
IRFB52N15DPBF
Infineon Technologies

MOSFET N-CH 150V 51A TO-220AB

Package: TO-220-3

Stock14,652
IRF3205ZPBF
Infineon Technologies

MOSFET N-CH 55V 75A TO-220AB

Package: TO-220-3

Stock17,688
FQP13N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 12.8A TO-220

Package: TO-220-3

Stock9,768
IRFS4321TRL7PP
Infineon Technologies

MOSFET N-CH 150V 86A D2PAK

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock16,584
DMNH10H028SPS-13
Diodes Incorporated

MOSFET N-CH 100V 40A POWERDI

Package: 8-PowerTDFN

Stock2,896
SSM6K217FE,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 1.8A ES6

Package: SOT-563, SOT-666

Stock3,200

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPI05N03LA	Infineon Technologies	MOSFET N-CH 25V 80A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,384	MOSFET (Metal Oxide)	25V	80A (Tc)	4.5V, 10V	2V @ 50µA	25nC @ 5V	3110pF @ 15V	±20V	-	94W (Tc)	4.9 mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF7402TR	Infineon Technologies	MOSFET N-CH 20V 6.8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock579,600	MOSFET (Metal Oxide)	20V	6.8A (Ta)	2.7V, 4.5V	700mV @ 250µA	22nC @ 4.5V	650pF @ 15V	±12V	-	2.5W (Ta)	35 mOhm @ 4.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF3515L	Infineon Technologies	MOSFET N-CH 150V 41A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,744	MOSFET (Metal Oxide)	150V	41A (Tc)	10V	4.5V @ 250µA	107nC @ 10V	2260pF @ 25V	±30V	-	200W (Tc)	45 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
AOI518	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 15A TO251A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 951pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock3,472	MOSFET (Metal Oxide)	30V	18A (Ta), 46A (Tc)	4.5V, 10V	2.6V @ 250µA	22.5nC @ 10V	951pF @ 15V	±20V	-	2.5W (Ta), 50W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251A	TO-251-3 Stub Leads, IPak
2SK0664G0L	Panasonic Electronic Components	MOSFET N-CH 50V 100MA SMINI-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 3.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V Vgs (Max): 8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 50 Ohm @ 20mA, 5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMini3-F2 Package / Case: SC-85	Package: SC-85	Stock55,716	MOSFET (Metal Oxide)	50V	100mA (Ta)	5V	3.5V @ 100µA	-	15pF @ 5V	8V	-	150mW (Ta)	50 Ohm @ 20mA, 5V	150°C (TJ)	Surface Mount	SMini3-F2	SC-85
FQB19N10LTM	Fairchild/ON Semiconductor	MOSFET N-CH 100V 19A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,896	MOSFET (Metal Oxide)	100V	19A (Tc)	5V, 10V	2V @ 250µA	18nC @ 5V	870pF @ 25V	±20V	-	3.75W (Ta), 75W (Tc)	100 mOhm @ 9.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
ZVP4424ASTOA	Diodes Incorporated	MOSFET P-CH 240V 0.2A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±40V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 9 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock3,776	MOSFET (Metal Oxide)	240V	200mA (Ta)	3.5V, 10V	2V @ 1mA	-	200pF @ 25V	±40V	-	750mW (Ta)	9 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
IPA65R380C6XKSA1	Infineon Technologies	MOSFET N-CH 650V 10.6A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,744	MOSFET (Metal Oxide)	650V	10.6A (Tc)	10V	3.5V @ 320µA	39nC @ 10V	710pF @ 100V	±20V	-	31W (Tc)	380 mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
IPB65R380C6ATMA1	Infineon Technologies	MOSFET N-CH 650V 10.6A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,528	MOSFET (Metal Oxide)	650V	10.6A (Tc)	10V	3.5V @ 320µA	39nC @ 10V	710pF @ 100V	±20V	-	83W (Tc)	380 mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS3806PBF	Infineon Technologies	MOSFET N-CH 60V 43A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock402,168	MOSFET (Metal Oxide)	60V	43A (Tc)	10V	4V @ 50µA	30nC @ 10V	1150pF @ 50V	±20V	-	71W (Tc)	15.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPD033N06NATMA1	Infineon Technologies	MOSFET N-CH TO-252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,928	MOSFET (Metal Oxide)	60V	90A (Tc)	6V, 10V	3.3V @ 50µA	44nC @ 10V	3400pF @ 30V	±20V	-	107W (Tc)	3.3 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD30N03S2L10ATMA1	Infineon Technologies	MOSFET N-CH 30V 30A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,016	MOSFET (Metal Oxide)	30V	30A (Tc)	4.5V, 10V	2V @ 50µA	42nC @ 10V	1200pF @ 25V	±20V	-	100W (Tc)	10 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
STL140N4F7AG	STMicroelectronics	POWER TRANSISTORS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 111W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock5,296	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 250µA	29nC @ 10V	2300pF @ 25V	±20V	-	111W (Tc)	2.5 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerSMD, Flat Leads
IPA60R950C6	Infineon Technologies	MOSFET N-CH 600V 4.4A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock11,916	MOSFET (Metal Oxide)	600V	4.4A (Tc)	10V	3.5V @ 130µA	13nC @ 10V	280pF @ 100V	±20V	-	26W (Tc)	950 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
IRFB52N15DPBF	Infineon Technologies	MOSFET N-CH 150V 51A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2770pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 230W (Tc) Rds On (Max) @ Id, Vgs: 32 mOhm @ 36A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock14,652	MOSFET (Metal Oxide)	150V	51A (Tc)	10V	5V @ 250µA	89nC @ 10V	2770pF @ 25V	±30V	-	3.8W (Ta), 230W (Tc)	32 mOhm @ 36A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF3205ZPBF	Infineon Technologies	MOSFET N-CH 55V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock17,688	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	110nC @ 10V	3450pF @ 25V	±20V	-	170W (Tc)	6.5 mOhm @ 66A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQP13N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 12.8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock9,768	MOSFET (Metal Oxide)	100V	12.8A (Tc)	10V	4V @ 250µA	16nC @ 10V	450pF @ 25V	±25V	-	65W (Tc)	180 mOhm @ 6.4A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
IRFS4321TRL7PP	Infineon Technologies	MOSFET N-CH 150V 86A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4460pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 14.7 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock16,584	MOSFET (Metal Oxide)	150V	86A (Tc)	10V	5V @ 250µA	110nC @ 10V	4460pF @ 50V	±30V	-	350W (Tc)	14.7 mOhm @ 34A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-7	TO-263-7, D2Pak (6 Leads + Tab)
DMNH10H028SPS-13	Diodes Incorporated	MOSFET N-CH 100V 40A POWERDI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2245pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,896	MOSFET (Metal Oxide)	100V	40A (Tc)	10V	4V @ 250µA	36nC @ 10V	2245pF @ 50V	±20V	-	1.6W (Ta)	28 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
SSM6K217FE,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 1.8A ES6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.2V Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 195 mOhm @ 1A, 8V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ES6 Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock3,200	MOSFET (Metal Oxide)	40V	1.8A (Ta)	1.8V, 8V	1.2V @ 1mA	1.1nC @ 4.2V	130pF @ 10V	±12V	-	500mW (Ta)	195 mOhm @ 1A, 8V	150°C (TJ)	Surface Mount	ES6	SOT-563, SOT-666
SQA604CEJW-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 80 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 5.63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 13.6W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerPAK®SC-70W-6 Package / Case: PowerPAK® SC-70-6	Package: -	Stock8,355	MOSFET (Metal Oxide)	80 V	5.63A (Tc)	4.5V, 10V	2.5V @ 250µA	9.8 nC @ 10 V	445 pF @ 25 V	±20V	-	13.6W (Tc)	80mOhm @ 3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerPAK®SC-70W-6	PowerPAK® SC-70-6
BUK7618-55-C-118	NXP	N-CHANNEL TRENCHMOS LOGIC LEVEL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ICE60N130	IceMOS Technology	Superjunction MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	25A (Tc)	10V	3.5V @ 250µA	72 nC @ 10 V	2730 pF @ 25 V	±20V	-	208W (Tc)	150mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
FDP083N15A-F102	onsemi	MOSFET N-CH 150V 83A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 294W (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Stock14,196	MOSFET (Metal Oxide)	150 V	83A (Tc)	10V	4V @ 250µA	84 nC @ 10 V	6040 pF @ 25 V	±20V	-	294W (Tc)	8.3mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
IPP90R800C3XKSA1	Infineon Technologies	MOSFET N-CH 900V 6.9A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 460µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	900 V	6.9A (Tc)	10V	3.5V @ 460µA	42 nC @ 10 V	1100 pF @ 100 V	±20V	-	104W (Tc)	800mOhm @ 4.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPP0400NXKSA1	Infineon Technologies	IPP0400 - N-Channel MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MMFTN4520	Diotec Semiconductor	MOSFET, SOT-23, 150V, 0.425A, 15 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 164 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	1A (Ta)	4.5V, 10V	3V @ 250µA	3.8 nC @ 10 V	164 pF @ 75 V	±20V	-	960mW (Ta)	380mOhm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IAUS300N08S5N014ATMA1	Infineon Technologies	MOSFET N-CH 80V 300A HSOG-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOG-8-1 Package / Case: 8-PowerSMD, Gull Wing	Package: -	Stock5,400	MOSFET (Metal Oxide)	80 V	300A (Tc)	6V, 10V	3.8V @ 230µA	187 nC @ 10 V	13178 pF @ 40 V	±20V	-	300W (Tc)	1.4mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOG-8-1	8-PowerSMD, Gull Wing