Page 1458 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLR2905TRRPBF
Infineon Technologies

MOSFET N-CH 55V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,184
TP0610K-T1
Vishay Siliconix

MOSFET P-CH 60V 185MA SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock49,440
FQD24N08TF
Fairchild/ON Semiconductor

MOSFET N-CH 80V 19.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock24,360
FDS6688S
Fairchild/ON Semiconductor

MOSFET N-CH 30V 16A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,464
NTMS4503NR2
ON Semiconductor

MOSFET N-CH 28V 9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,768
PH9030AL,115
NXP

MOSFET N-CH 30V 61A LFPAK

Package: SC-100, SOT-669

Stock185,004
STS4DPFS30L
STMicroelectronics

MOSFET P-CH 30V 5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,432
RJK1002DPP-E0#T2
Renesas Electronics America

MOSFET N-CH 100V 70A TO220

Package: TO-220-3 Full Pack

Stock5,728
IXTA110N055T7
IXYS

MOSFET N-CH 55V 110A TO-263-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock5,680
SUM45N25-58-E3
Vishay Siliconix

MOSFET N-CH 250V 45A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock82,284
IPA60R360P7XKSA1
Infineon Technologies

MOSFET N-CH 650V 9A TO220

Package: TO-220-3 Full Pack

Stock9,660
IRFS7734PBF
Infineon Technologies

MOSFET N-CH 75V 183A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock17,712
PMXB65UPEZ
Nexperia USA Inc.

MOSFET P-CH 12V 3.2A DFN1010D-3G

Package: 3-XDFN Exposed Pad

Stock7,824
STW14NK50Z
STMicroelectronics

MOSFET N-CH 500V 14A TO-247

Package: TO-247-3

Stock59,928
ZVN0545A
Diodes Incorporated

MOSFET N-CH 450V 0.09A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock48,000
VN2106N3-G
Microchip Technology

MOSFET N-CH 60V 300MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock6,096
SI7613DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 35A 1212-8 PPAK

Package: PowerPAK? 1212-8

Stock5,664
AON7520
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 50A 8-DFN

Package: 8-PowerWDFN

Stock5,776
SI3433CDV-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 6A 6TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock5,172,012
CPH5819-TL-E
onsemi

NCH+SBD 4V DRIVE SERIES

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLR2905TRRPBF	Infineon Technologies	MOSFET N-CH 55V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,184	MOSFET (Metal Oxide)	55V	42A (Tc)	4V, 10V	2V @ 250µA	48nC @ 5V	1700pF @ 25V	±16V	-	110W (Tc)	27 mOhm @ 25A, 10V	-	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
TP0610K-T1	Vishay Siliconix	MOSFET P-CH 60V 185MA SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 185mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock49,440	MOSFET (Metal Oxide)	60V	185mA (Ta)	4.5V, 10V	3V @ 250µA	1.7nC @ 15V	23pF @ 25V	±20V	-	350mW (Ta)	6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
FQD24N08TF	Fairchild/ON Semiconductor	MOSFET N-CH 80V 19.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock24,360	MOSFET (Metal Oxide)	80V	19.6A (Tc)	10V	4V @ 250µA	25nC @ 10V	750pF @ 25V	±25V	-	2.5W (Ta), 50W (Tc)	60 mOhm @ 9.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDS6688S	Fairchild/ON Semiconductor	MOSFET N-CH 30V 16A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 6 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,464	MOSFET (Metal Oxide)	30V	16A (Ta)	4.5V, 10V	3V @ 1mA	78nC @ 10V	3290pF @ 15V	±20V	-	2.5W (Ta)	6 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NTMS4503NR2	ON Semiconductor	MOSFET N-CH 28V 9A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 28V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 16V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 930mW (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,768	MOSFET (Metal Oxide)	28V	9A (Ta)	4.5V, 10V	2V @ 250µA	23nC @ 4.5V	2400pF @ 16V	±20V	-	930mW (Ta)	8 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
PH9030AL,115	NXP	MOSFET N-CH 30V 61A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1006pF @ 12V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock185,004	MOSFET (Metal Oxide)	30V	61A (Tc)	-	2.15V @ 1mA	17.8nC @ 10V	1006pF @ 12V	-	-	-	8 mOhm @ 15A, 10V	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
STS4DPFS30L	STMicroelectronics	MOSFET P-CH 30V 5A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Vgs (Max): ±16V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,432	MOSFET (Metal Oxide)	30V	5A (Tc)	4.5V, 10V	2.5V @ 250µA	16nC @ 5V	1350pF @ 25V	±16V	Schottky Diode (Isolated)	2.5W (Tc)	55 mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
RJK1002DPP-E0#T2	Renesas Electronics America	MOSFET N-CH 100V 70A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 35A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,728	MOSFET (Metal Oxide)	100V	70A (Ta)	10V	-	94nC @ 10V	6450pF @ 10V	±20V	-	30W (Tc)	7.6 mOhm @ 35A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IXTA110N055T7	IXYS	MOSFET N-CH 55V 110A TO-263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 (IXTA..7) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock5,680	MOSFET (Metal Oxide)	55V	110A (Tc)	10V	4V @ 100µA	67nC @ 10V	3080pF @ 25V	±20V	-	230W (Tc)	7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7 (IXTA..7)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
SUM45N25-58-E3	Vishay Siliconix	MOSFET N-CH 250V 45A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 58 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock82,284	MOSFET (Metal Oxide)	250V	45A (Tc)	6V, 10V	4V @ 250µA	140nC @ 10V	5000pF @ 25V	±30V	-	3.75W (Ta), 375W (Tc)	58 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPA60R360P7XKSA1	Infineon Technologies	MOSFET N-CH 650V 9A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 22W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock9,660	MOSFET (Metal Oxide)	650V	9A (Tc)	10V	4V @ 140µA	13nC @ 10V	555pF @ 400V	±20V	-	22W (Tc)	360 mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
IRFS7734PBF	Infineon Technologies	MOSFET N-CH 75V 183A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 183A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock17,712	MOSFET (Metal Oxide)	75V	183A (Tc)	6V, 10V	3.7V @ 250µA	270nC @ 10V	10150pF @ 25V	±20V	-	290W (Tc)	3.5 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PMXB65UPEZ	Nexperia USA Inc.	MOSFET P-CH 12V 3.2A DFN1010D-3G FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 317mW (Ta), 8.33W (Tc) Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1010D-3 Package / Case: 3-XDFN Exposed Pad	Package: 3-XDFN Exposed Pad	Stock7,824	MOSFET (Metal Oxide)	12V	3.2A (Ta)	1.2V, 4.5V	1V @ 250µA	12nC @ 4.5V	634pF @ 6V	±8V	-	317mW (Ta), 8.33W (Tc)	72 mOhm @ 3.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1010D-3	3-XDFN Exposed Pad
STW14NK50Z	STMicroelectronics	MOSFET N-CH 500V 14A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock59,928	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4.5V @ 100µA	92nC @ 10V	2000pF @ 25V	±30V	-	150W (Tc)	380 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
ZVN0545A	Diodes Incorporated	MOSFET N-CH 450V 0.09A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 50 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock48,000	MOSFET (Metal Oxide)	450V	90mA (Ta)	10V	3V @ 1mA	-	70pF @ 25V	±20V	-	700mW (Ta)	50 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VN2106N3-G	Microchip Technology	MOSFET N-CH 60V 300MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock6,096	MOSFET (Metal Oxide)	60V	300mA (Tj)	5V, 10V	2.4V @ 1mA	-	50pF @ 25V	±20V	-	1W (Tc)	4 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
SI7613DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 35A 1212-8 PPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 10V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc) Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 17A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock5,664	MOSFET (Metal Oxide)	20V	35A (Tc)	4.5V, 10V	2.2V @ 250µA	87nC @ 10V	2620pF @ 10V	±16V	-	3.8W (Ta), 52.1W (Tc)	8.7 mOhm @ 17A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
AON7520	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 50A 8-DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4175pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 83.3W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock5,776	MOSFET (Metal Oxide)	30V	48A (Ta), 50A (Tc)	2.5V, 10V	1.2V @ 250µA	105nC @ 10V	4175pF @ 15V	±12V	-	6.2W (Ta), 83.3W (Tc)	1.8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3.3x3.3)	8-PowerWDFN
SI3433CDV-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 6A 6TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc) Rds On (Max) @ Id, Vgs: 38 mOhm @ 5.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock5,172,012	MOSFET (Metal Oxide)	20V	6A (Tc)	1.8V, 4.5V	1V @ 250µA	45nC @ 8V	1300pF @ 10V	±8V	-	1.6W (Ta), 3.3W (Tc)	38 mOhm @ 5.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
CPH5819-TL-E	onsemi	NCH+SBD 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMN2025UFDF-7	Diodes Incorporated	MOSFET N-CH 20V 6.5A 6UDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 486 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	6.5A (Ta)	1.8V, 4.5V	1V @ 250µA	12.3 nC @ 10 V	486 pF @ 10 V	±10V	-	700mW (Ta)	25mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
GS120R040Q4	Goford Semiconductor	SiC MOSFET N-CH 1200V 50A TO-24 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJP60R190E_T0_00001	Panjit International Inc.	600V N-CHANNEL SUPER JUNCTION MO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1421 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 231W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	2.1A (Ta), 20A (Tc)	10V	4V @ 250µA	62 nC @ 10 V	1421 pF @ 25 V	±20V	-	2W (Ta), 231W (Tc)	196mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IQDH88N06LM5ATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 163µA Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-U04 Package / Case: 8-PowerTDFN	Package: -	Stock14,523	MOSFET (Metal Oxide)	60 V	42A (Ta), 447A (Tc)	4.5V, 10V	2.3V @ 163µA	202 nC @ 10 V	14000 pF @ 30 V	±20V	-	3W (Ta), 333W (Tc)	0.86mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSON-8-U04	8-PowerTDFN
SIR5623DP-T1-RE3	Vishay Siliconix	P-CHANNEL 60 V (D-S) MOSFET POWE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 37.1A(Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 59.5W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock35,904	MOSFET (Metal Oxide)	60 V	10.5A (Ta), 37.1A(Tc)	4.5V, 10V	2.6V @ 250µA	33 nC @ 10 V	1575 pF @ 30 V	±20V	-	4.8W (Ta), 59.5W (Tc)	24mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
2SJ316-TD-E	onsemi	PCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCAC10H03A-TP	Micro Commercial Co	N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3865 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 49W Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Stock8,502	MOSFET (Metal Oxide)	30 V	100A (Tc)	4.5V, 10V	2.5V @ 250µA	85 nC @ 10 V	3865 pF @ 15 V	±20V	-	49W	3mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
BSZ520N15NS3GATMA1	Infineon Technologies	MOSFET N-CH 150V 21A 8TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: -	Stock46,680	MOSFET (Metal Oxide)	150 V	21A (Tc)	8V, 10V	4V @ 35µA	12 nC @ 10 V	890 pF @ 75 V	±20V	-	57W (Tc)	52mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN