Page 1461 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPD06N03LA G
Infineon Technologies

MOSFET N-CH 25V 50A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,992
ZXMP3F36N8TA
Diodes Incorporated

MOSFET P-CH 30V 7.2A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,582,536
IXFX260N17T
IXYS

MOSFET N-CH 170V 260A PLUS247

Package: TO-247-3

Stock7,328
MMBF170LT3G
ON Semiconductor

MOSFET N-CH 60V 500MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock49,140
PHX23NQ11T,127
NXP

MOSFET N-CH 110V 16A SOT186A

Package: TO-220-3 Full Pack, Isolated Tab

Stock4,288
HUF76439S3S
Fairchild/ON Semiconductor

MOSFET N-CH 60V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,176
IRF2804STRRPBF
Infineon Technologies

MOSFET N-CH 40V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock391,200
FQ7N10
Fairchild/Micross Components

DIE MOSFET N-CH 100V

Package: -

Stock5,088
FCP11N60N
Fairchild/ON Semiconductor

MOSFET N-CH 600V 10.8A TO220

Package: TO-220-3

Stock4,416
AO4262E
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 16.5A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,360
ECH8308-TL-H
ON Semiconductor

MOSFET P-CH 12V 10A ECH8

Package: 8-SMD, Flat Lead

Stock18,948
DMG3414UQ-13
Diodes Incorporated

MOSFET BVDSS: 8V 24V SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock6,016
STP26N60M2
STMicroelectronics

MOSFET N-CH 600V 20A TO220

Package: TO-220-3

Stock7,168
TK14A65W5,S5X
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13.7A TO-220

Package: TO-220-3 Full Pack, Isolated Tab

Stock6,400
IRF135SA204
Infineon Technologies

MOSFET N-CH 135V 160A

Package: TO-263-7, D2Pak (6 Leads + Tab) Variant

Stock5,872
SQJ486EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 75V POWERPAK SO8L

Package: PowerPAK? SO-8

Stock2,096
AON6414A
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 5X6DFN

Package: 8-PowerSMD, Flat Leads

Stock230,700
SQ1431EH-T1_GE3
Vishay Siliconix

MOSFET P-CH 30V 3A SC70

Package: 6-TSSOP, SC-88, SOT-363

Stock3,408
NVMFS020N06CT1G
onsemi

MOSFET N-CH 60V 9A/28A 5DFN

Package: -

Request a Quote
R6515ENZC17
Rohm Semiconductor

MOSFET N-CH 650V 15A TO3

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPD06N03LA G	Infineon Technologies	MOSFET N-CH 25V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,992	MOSFET (Metal Oxide)	25V	50A (Tc)	4.5V, 10V	2V @ 40µA	22nC @ 5V	2653pF @ 15V	±20V	-	83W (Tc)	5.7 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
ZXMP3F36N8TA	Diodes Incorporated	MOSFET P-CH 30V 7.2A 8SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43.9nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 2265pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,582,536	MOSFET (Metal Oxide)	30V	7.2A (Ta)	4.5V, 10V	2.5V @ 250µA	43.9nC @ 15V	2265pF @ 15V	±20V	-	1.56W (Ta)	20 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IXFX260N17T	IXYS	MOSFET N-CH 170V 260A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 170V Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1670W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,328	MOSFET (Metal Oxide)	170V	260A (Tc)	10V	5V @ 8mA	400nC @ 10V	24000pF @ 25V	±20V	-	1670W (Tc)	6.5 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
MMBF170LT3G	ON Semiconductor	MOSFET N-CH 60V 500MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock49,140	MOSFET (Metal Oxide)	60V	500mA (Ta)	10V	3V @ 1mA	-	60pF @ 10V	±20V	-	225mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
PHX23NQ11T,127	NXP	MOSFET N-CH 110V 16A SOT186A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 110V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 41.6W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock4,288	MOSFET (Metal Oxide)	110V	16A (Tc)	10V	4V @ 1mA	22nC @ 10V	830pF @ 25V	±20V	-	41.6W (Tc)	70 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
HUF76439S3S	Fairchild/ON Semiconductor	MOSFET N-CH 60V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2745pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,176	MOSFET (Metal Oxide)	60V	75A (Tc)	4.5V, 10V	3V @ 250µA	84nC @ 10V	2745pF @ 25V	±16V	-	180W (Tc)	12 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF2804STRRPBF	Infineon Technologies	MOSFET N-CH 40V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock391,200	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 250µA	240nC @ 10V	6450pF @ 25V	±20V	-	300W (Tc)	2 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQ7N10	Fairchild/Micross Components	DIE MOSFET N-CH 100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,088	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FCP11N60N	Fairchild/ON Semiconductor	MOSFET N-CH 600V 10.8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 5.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock4,416	MOSFET (Metal Oxide)	600V	10.8A (Tc)	10V	4V @ 250µA	35.6nC @ 10V	1505pF @ 100V	±30V	-	94W (Tc)	299 mOhm @ 5.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
AO4262E	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 16.5A 8SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1652pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,360	MOSFET (Metal Oxide)	60V	16.5A (Ta)	4.5V, 10V	2.2V @ 250µA	25nC @ 4.5V	1652pF @ 30V	±20V	-	3.1W (Ta)	6.5 mOhm @ 16.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
ECH8308-TL-H	ON Semiconductor	MOSFET P-CH 12V 10A ECH8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 6V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-ECH Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock18,948	MOSFET (Metal Oxide)	12V	10A (Ta)	1.8V, 4.5V	-	26nC @ 4.5V	2300pF @ 6V	±10V	-	1.6W (Ta)	12.5 mOhm @ 5A, 4.5V	150°C (TJ)	Surface Mount	8-ECH	8-SMD, Flat Lead
DMG3414UQ-13	Diodes Incorporated	MOSFET BVDSS: 8V 24V SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 829.9pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 780mW Rds On (Max) @ Id, Vgs: 25 mOhm @ 8.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,016	MOSFET (Metal Oxide)	20V	4.2A (Ta)	1.8V, 4.5V	900mV @ 250µA	9.6nC @ 4.5V	829.9pF @ 10V	±8V	-	780mW	25 mOhm @ 8.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
STP26N60M2	STMicroelectronics	MOSFET N-CH 600V 20A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock7,168	MOSFET (Metal Oxide)	600V	20A	10V	-	-	-	-	-	-	-	-	Through Hole	TO-220	TO-220-3
TK14A65W5,S5X	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13.7A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 690µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock6,400	MOSFET (Metal Oxide)	650V	13.7A (Ta)	10V	4.5V @ 690µA	40nC @ 10V	1300pF @ 300V	±30V	-	40W (Tc)	300 mOhm @ 6.9A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack, Isolated Tab
IRF135SA204	Infineon Technologies	MOSFET N-CH 135V 160A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 135V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 315nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11690pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 96A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab) Variant	Package: TO-263-7, D2Pak (6 Leads + Tab) Variant	Stock5,872	MOSFET (Metal Oxide)	135V	160A (Tc)	10V	4V @ 250µA	315nC @ 10V	11690pF @ 50V	±20V	-	500W (Tc)	5.9 mOhm @ 96A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-7	TO-263-7, D2Pak (6 Leads + Tab) Variant
SQJ486EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 75V POWERPAK SO8L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1386pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 51A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock2,096	MOSFET (Metal Oxide)	75V	30A (Tc)	4.5V, 10V	2.1V @ 250µA	34nC @ 10V	1386pF @ 15V	±20V	-	56W (Tc)	26 mOhm @ 51A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
AON6414A	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 5X6DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock230,700	MOSFET (Metal Oxide)	30V	13A (Ta), 30A (Tc)	4.5V, 10V	2.5V @ 250µA	24nC @ 10V	1380pF @ 15V	±20V	-	2.3W (Ta), 31W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
SQ1431EH-T1_GE3	Vishay Siliconix	MOSFET P-CH 30V 3A SC70 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 175 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock3,408	MOSFET (Metal Oxide)	30V	3A (Tc)	4.5V, 10V	2V @ 250µA	6.5nC @ 4.5V	205pF @ 25V	±20V	-	3W (Tc)	175 mOhm @ 2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SC-70-6 (SOT-363)	6-TSSOP, SC-88, SOT-363
NVMFS020N06CT1G	onsemi	MOSFET N-CH 60V 9A/28A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.4W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	9A (Ta), 28A (Tc)	10V	4V @ 20µA	5.8 nC @ 10 V	355 pF @ 30 V	±20V	-	3.4W (Ta), 31W (Tc)	19.6mOhm @ 4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
R6515ENZC17	Rohm Semiconductor	MOSFET N-CH 650V 15A TO3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 430µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	15A (Tc)	10V	4V @ 430µA	40 nC @ 10 V	910 pF @ 25 V	±20V	-	60W (Tc)	315mOhm @ 6.5A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
SI2301A-13P	Micro Commercial Co	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1W (Tj) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	2.8A (Ta)	2.5V, 4.5V	900mV @ 250µA	14.5 nC @ 4.5 V	880 pF @ 6 V	±8V	-	1W (Tj)	120mOhm @ 2.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
MCH5836-TL-E	onsemi	PCH+SBD 1.8V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMT64M8LCG-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V V-DFN3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 77.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2664 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 990mW (Ta) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: V-DFN3333-8 (Type B) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	16.1A (Ta), 77.8A (Tc)	4.5V, 10V	2.4V @ 250µA	47.5 nC @ 10 V	2664 pF @ 30 V	±20V	-	990mW (Ta)	4.8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	V-DFN3333-8 (Type B)	8-PowerVDFN
R6055VNZC17	Rohm Semiconductor	600V 23A TO-3PF, PRESTOMOS WITH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 6.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 99W (Tc) Rds On (Max) @ Id, Vgs: 71mOhm @ 16A, 15V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Stock1,260	MOSFET (Metal Oxide)	600 V	23A (Tc)	10V, 15V	6.5V @ 1.5mA	80 nC @ 10 V	3700 pF @ 100 V	±30V	-	99W (Tc)	71mOhm @ 16A, 15V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
IRFU220	Harris Corporation	4.6A 200V 0.800 OHM N-CHANNEL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	4.8A (Tc)	-	4V @ 250µA	14 nC @ 10 V	260 pF @ 25 V	-	-	-	800mOhm @ 2.9A, 10V	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
APT50M75B2LLG	Microchip Technology	MOSFET N-CH 500V 57A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 570W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 28.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX™ [B2] Package / Case: TO-247-3 Variant	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	57A (Tc)	10V	5V @ 2.5mA	125 nC @ 10 V	5590 pF @ 25 V	±30V	-	570W (Tc)	75mOhm @ 28.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX™ [B2]	TO-247-3 Variant
DMTH43M7LFGQ-7	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2182 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 65.2W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	100A (Tc)	5V, 10V	2.5V @ 250µA	30 nC @ 10 V	2182 pF @ 20 V	±20V	-	3.5W (Ta), 65.2W (Tc)	3mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN
SIR588DP-T1-RE3	Vishay Siliconix	N-CHANNEL 80 V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 59.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 59.5W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	17.2A (Ta), 59.5A (Tc)	7.5V, 10V	4V @ 250µA	28.5 nC @ 10 V	1380 pF @ 40 V	±20V	-	5W (Ta), 59.5W (Tc)	8mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8