Page 1459 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF3711Z
Infineon Technologies

MOSFET N-CH 20V 92A TO-220AB

Package: TO-220-3

Stock390,000
BFL4037-1E
ON Semiconductor

MOSFET N-CH 500V 11A

Package: TO-220-3 Full Pack

Stock3,936
VP0808B-E3
Vishay Siliconix

MOSFET P-CH 80V 0.88A TO-205

Package: TO-205AD, TO-39-3 Metal Can

Stock6,528
2SJ665-DL-E
ON Semiconductor

MOSFET P-CH 100V 27A SMP-FD

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,704
TK4A65DA(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 3.5A TO-220SIS

Package: TO-220-3 Full Pack

Stock7,008
PSMN9R0-25YLC,115
NXP

MOSFET N-CH 25V 46A LL LFPAK

Package: SC-100, SOT-669

Stock7,776
HUF75842S3S
Fairchild/ON Semiconductor

MOSFET N-CH 150V 43A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,320
FQP9N08L
Fairchild/ON Semiconductor

MOSFET N-CH 80V 9.3A TO-220

Package: TO-220-3

Stock103,464
FDD107AN06LA0
Fairchild/ON Semiconductor

MOSFET N-CH 60V 10.9A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,704
IRFI610G
Vishay Siliconix

MOSFET N-CH 200V 2.6A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock2,944
IPP65R660CFDAAKSA1
Infineon Technologies

MOSFET N-CH 650V TO-220-3

Package: TO-220-3

Stock4,576
AOTF12T50P
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 12A TO-220F

Package: TO-220-3 Full Pack

Stock6,288
DMP3026SFDE-13
Diodes Incorporated

MOSFET BVDSS: 25V 30V U-DFN2020-

Package: 6-UDFN Exposed Pad

Stock5,776
FDP8N50NZ
Fairchild/ON Semiconductor

MOSFET N-CH 500V TO-220AB-3

Package: TO-220-3

Stock13,320
FDMC6686P
Fairchild/ON Semiconductor

MOSFET P-CH 20V POWER33

Package: 8-PowerWDFN

Stock5,568
TPN2R203NC,L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 45A 8-TSON

Package: 8-PowerVDFN

Stock3,216
SSM3K7002CFU,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 0.17A SMD

Package: SC-70, SOT-323

Stock3,952
SPP17N80C3
Infineon Technologies

MOSFET N-CH 800V 17A TO-220AB

Package: TO-220-3

Stock920,844
IPD122N10N3GATMA1
Infineon Technologies

MOSFET N-CH 100V 59A

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock146,892
CSD17302Q5A
Texas Instruments

MOSFET N-CH 30V 87A 8SON

Package: 8-PowerTDFN

Stock19,620

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF3711Z	Infineon Technologies	MOSFET N-CH 20V 92A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,000	MOSFET (Metal Oxide)	20V	92A (Tc)	4.5V, 10V	2.45V @ 250µA	24nC @ 4.5V	2150pF @ 10V	±20V	-	79W (Tc)	6 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BFL4037-1E	ON Semiconductor	MOSFET N-CH 500V 11A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 48.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 430 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3FS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,936	MOSFET (Metal Oxide)	500V	11A (Tc)	10V	-	48.6nC @ 10V	1200pF @ 30V	±30V	-	2W (Ta), 40W (Tc)	430 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3FS	TO-220-3 Full Pack
VP0808B-E3	Vishay Siliconix	MOSFET P-CH 80V 0.88A TO-205 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 880mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock6,528	MOSFET (Metal Oxide)	80V	880mA (Ta)	10V	4.5V @ 1mA	-	150pF @ 25V	±20V	-	6.25W (Ta)	5 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
2SJ665-DL-E	ON Semiconductor	MOSFET P-CH 100V 27A SMP-FD FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 77 mOhm @ 14A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMP-FD Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,704	MOSFET (Metal Oxide)	100V	27A (Ta)	4V, 10V	2.6V @ 1mA	74nC @ 10V	4200pF @ 20V	±20V	-	1.65W (Ta), 65W (Tc)	77 mOhm @ 14A, 10V	150°C (TJ)	Surface Mount	SMP-FD	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TK4A65DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 3.5A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 1.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,008	MOSFET (Metal Oxide)	650V	3.5A (Ta)	10V	4.4V @ 1mA	12nC @ 10V	600pF @ 25V	±30V	-	35W (Tc)	1.9 Ohm @ 1.8A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
PSMN9R0-25YLC,115	NXP	MOSFET N-CH 25V 46A LL LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 694pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock7,776	MOSFET (Metal Oxide)	25V	46A (Tc)	4.5V, 10V	1.95V @ 1mA	12nC @ 10V	694pF @ 12V	±20V	-	34W (Tc)	9.1 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
HUF75842S3S	Fairchild/ON Semiconductor	MOSFET N-CH 150V 43A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 175nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,320	MOSFET (Metal Oxide)	150V	43A (Tc)	10V	4V @ 250µA	175nC @ 20V	2730pF @ 25V	±20V	-	230W (Tc)	42 mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQP9N08L	Fairchild/ON Semiconductor	MOSFET N-CH 80V 9.3A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 4.65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	80V	9.3A (Tc)	5V, 10V	5V @ 250µA	6.1nC @ 5V	280pF @ 25V	±20V	-	40W (Tc)	210 mOhm @ 4.65A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDD107AN06LA0	Fairchild/ON Semiconductor	MOSFET N-CH 60V 10.9A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 10.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 91 mOhm @ 10.9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,704	MOSFET (Metal Oxide)	60V	3.4A (Ta), 10.9A (Tc)	5V, 10V	3V @ 250µA	5.5nC @ 5V	360pF @ 25V	±20V	-	25W (Tc)	91 mOhm @ 10.9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFI610G	Vishay Siliconix	MOSFET N-CH 200V 2.6A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock2,944	MOSFET (Metal Oxide)	200V	2.6A (Ta)	-	-	-	-	-	-	-	-	-	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IPP65R660CFDAAKSA1	Infineon Technologies	MOSFET N-CH 650V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 543pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 660 mOhm @ 3.2A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock4,576	MOSFET (Metal Oxide)	650V	6A (Tc)	10V	4.5V @ 200µA	20nC @ 10V	543pF @ 100V	±20V	-	62.5W (Tc)	660 mOhm @ 3.2A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
AOTF12T50P	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 500V 12A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1477pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,288	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	5V @ 250µA	32nC @ 10V	1477pF @ 100V	±30V	-	43W (Tc)	500 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
DMP3026SFDE-13	Diodes Incorporated	MOSFET BVDSS: 25V 30V U-DFN2020- FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1204pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 19 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock5,776	MOSFET (Metal Oxide)	30V	10.4A (Ta)	4V, 10V	3V @ 250µA	19.6nC @ 10V	1204pF @ 15V	±25V	-	2W (Ta)	19 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type E)	6-UDFN Exposed Pad
FDP8N50NZ	Fairchild/ON Semiconductor	MOSFET N-CH 500V TO-220AB-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock13,320	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	5V @ 250µA	18nC @ 10V	735pF @ 25V	±25V	-	130W (Tc)	850 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDMC6686P	Fairchild/ON Semiconductor	MOSFET P-CH 20V POWER33 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 18A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock5,568	MOSFET (Metal Oxide)	20V	18A (Ta), 56A (Tc)	1.8V, 4.5V	1V @ 250µA	122nC @ 4.5V	13200pF @ 10V	±8V	-	2.3W (Ta), 40W (Tc)	4 mOhm @ 18A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (3.3x3.3), Power33	8-PowerWDFN
TPN2R203NC,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 45A 8-TSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.3V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 22.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,216	MOSFET (Metal Oxide)	30V	45A (Tc)	10V	2.3V @ 500µA	34nC @ 10V	2230pF @ 15V	±20V	-	700mW (Ta), 42W (Tc)	2.2 mOhm @ 22.5A, 10V	150°C (TJ)	Surface Mount	8-TSON Advance (3.3x3.3)	8-PowerVDFN
SSM3K7002CFU,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 0.17A SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: USM Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock3,952	MOSFET (Metal Oxide)	60V	170mA (Ta)	4.5V, 10V	2.1V @ 250µA	0.35nC @ 4.5V	17pF @ 10V	±20V	-	150mW (Ta)	3.9 Ohm @ 100mA, 10V	150°C (TJ)	Surface Mount	USM	SC-70, SOT-323
SPP17N80C3	Infineon Technologies	MOSFET N-CH 800V 17A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock920,844	MOSFET (Metal Oxide)	800V	17A (Tc)	10V	3.9V @ 1mA	177nC @ 10V	2320pF @ 25V	±20V	-	208W (Tc)	290 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPD122N10N3GATMA1	Infineon Technologies	MOSFET N-CH 100V 59A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 46µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 46A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock146,892	MOSFET (Metal Oxide)	100V	59A (Tc)	6V, 10V	3.5V @ 46µA	35nC @ 10V	2500pF @ 50V	±20V	-	94W (Tc)	12.2 mOhm @ 46A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
CSD17302Q5A	Texas Instruments	MOSFET N-CH 30V 87A 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 87A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 14A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock19,620	MOSFET (Metal Oxide)	30V	16A (Ta), 87A (Tc)	3V, 8V	1.7V @ 250µA	7nC @ 4.5V	950pF @ 15V	+10V, -8V	-	3W (Ta)	7.9 mOhm @ 14A, 8V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
DMN3066LVT-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 900mW Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSOT-26 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	3.6A (Ta)	2.5V, 4.5V	1.5V @ 250µA	4 nC @ 4.5 V	328 pF @ 10 V	±12V	-	900mW	67mOhm @ 2.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TSOT-26	SOT-23-6 Thin, TSOT-23-6
ICE20N60	IceMOS Technology	Superjunction MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 236W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	3.9V @ 250µA	59 nC @ 10 V	2064 pF @ 25 V	±20V	-	236W (Tc)	190mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
MSC025SMA120B	Microchip Technology	SICFET N-CH 1.2KV 103A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock432	SiCFET (Silicon Carbide)	1200 V	103A (Tc)	20V	2.8V @ 1mA	232 nC @ 20 V	3020 pF @ 1000 V	+25V, -10V	-	500W (Tc)	31mOhm @ 40A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
NTH4LN019N65S3H	onsemi	POWER MOSFET, N-CHANNEL, SUPERFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 14.3mA Gate Charge (Qg) (Max) @ Vgs: 282 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15993 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 19.3mOhm @ 37.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	75A (Tc)	10V	4V @ 14.3mA	282 nC @ 10 V	15993 pF @ 400 V	±30V	-	625W (Tc)	19.3mOhm @ 37.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-4	TO-247-4
DMN2400UFB4-7R	Diodes Incorporated	MOSFET N-CH X2-DFN1006-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 16 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 470mW (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN1006-3 Package / Case: 3-XFDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	750mA (Ta)	1.8V, 4.5V	900mV @ 250µA	0.5 nC @ 4.5 V	36 pF @ 16 V	±12V	-	470mW (Ta)	550mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN1006-3	3-XFDFN
18N20F	Goford Semiconductor	MOSFET N-CH 200V 18A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	-	18A (Tc)	10V	3V @ 250µA	-	-	±20V	-	110W (Tc)	190mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
PMH850UPEH	Nexperia USA Inc.	MOSFET P-CH 30V 600MA DFN0606-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 62.2 pF @ 15 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 660mW (Ta), 2.23W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN0606-3 Package / Case: 3-XFDFN	Package: -	Stock12,684	MOSFET (Metal Oxide)	30 V	600mA (Ta)	1.5V, 4.5V	950mV @ 250µA	0.9 nC @ 4.5 V	62.2 pF @ 15 V	±8V	-	660mW (Ta), 2.23W (Tc)	1Ohm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN0606-3	3-XFDFN
DMP2036UVTQ-13	Diodes Incorporated	MOSFET BVDSS: 8V~24V TSOT26 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSOT-26 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	6A (Ta)	1.8V, 4.5V	1V @ 250µA	20.5 nC @ 4.5 V	1808 pF @ 15 V	±8V	-	1.1W (Ta)	30mOhm @ 6.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TSOT-26	SOT-23-6 Thin, TSOT-23-6