Page 1465 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFC3710ZEB
Infineon Technologies

MOSFET N-CH WAFER

Package: -

Stock4,880
IPI120N06S4H1AKSA2
Infineon Technologies

MOSFET N-CH TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,792
IRFB17N20D
Infineon Technologies

MOSFET N-CH 200V 16A TO-220AB

Package: TO-220-3

Stock439,236
2N6798U
Microsemi Corporation

MOSFET N-CH 200V 18LCC

Package: 18-BQFN Exposed Pad

Stock7,312
BUK653R3-30C,127
Nexperia USA Inc.

MOSFET N-CH 30V 100A TO-220AB

Package: TO-220-3

Stock7,472
ATP201-TL-H
ON Semiconductor

MOSFET N-CH 30V 35A ATPAK

Package: ATPAK (2 leads+tab)

Stock5,456
SI4484EY-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 4.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock42,300
FQD16N25CTM_F080
Fairchild/ON Semiconductor

MOSFET N-CH 250V 16A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,168
FQI2N90TU
Fairchild/ON Semiconductor

MOSFET N-CH 900V 2.2A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,248
STV160NF03LAT4
STMicroelectronics

MOSFET N-CH 30V 160A POWERSO-10

Package: PowerSO-10 Exposed Bottom Pad

Stock3,472
STFV4N150
STMicroelectronics

MOSFET N-CH 1500V 4A TO-220FH

Package: TO-220-3 Full Pack, Isolated Tab

Stock2,352
BUK969R3-100E,118
Nexperia USA Inc.

MOSFET N-CH 100V 100A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,848
RS1G180MNTB
Rohm Semiconductor

MOSFET N-CH 40V 18A 8HSOP

Package: 8-PowerTDFN

Stock5,920
AOD2910E
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 37A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,080
DMT3008LFDF-7
Diodes Incorporated

MOSFET N-CH 30V 12A

Package: 6-UDFN Exposed Pad

Stock4,592
STH260N6F6-6
STMicroelectronics

MOSFET N-CH 60V 180A H2PAK-6

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock3,312
BSS214NH6327XTSA1
Infineon Technologies

MOSFET N-CH 20V 1.5A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock49,194
CSD18509Q5B
Texas Instruments

MOSFET N-CH 40V 100A 8VSON

Package: 8-PowerTDFN

Stock5,232
GT080N10T
Goford Semiconductor

MOSFET N-CH 100V 70A TO-220

Package: -

Request a Quote
PJD50N10AL-AU_L2_000A1
Panjit International Inc.

100V N-CHANNEL ENHANCEMENT MODE

Package: -

Stock3,891

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFC3710ZEB	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,880	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPI120N06S4H1AKSA2	Infineon Technologies	MOSFET N-CH TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 21900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,792	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 200µA	270nC @ 10V	21900pF @ 25V	±20V	-	250W (Tc)	2.4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFB17N20D	Infineon Technologies	MOSFET N-CH 200V 16A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock439,236	MOSFET (Metal Oxide)	200V	16A (Tc)	10V	5.5V @ 250µA	50nC @ 10V	1100pF @ 25V	±30V	-	3.8W (Ta), 140W (Tc)	170 mOhm @ 9.8A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
2N6798U	Microsemi Corporation	MOSFET N-CH 200V 18LCC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-BQFN Exposed Pad	Package: 18-BQFN Exposed Pad	Stock7,312	MOSFET (Metal Oxide)	200V	5.5A (Tc)	10V	4V @ 250µA	5.29nC @ 10V	-	±20V	-	800mW (Ta), 25W (Tc)	400 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	18-ULCC (9.14x7.49)	18-BQFN Exposed Pad
BUK653R3-30C,127	Nexperia USA Inc.	MOSFET N-CH 30V 100A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6960pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 204W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,472	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	2.8V @ 1mA	114nC @ 10V	6960pF @ 25V	±16V	-	204W (Tc)	3.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
ATP201-TL-H	ON Semiconductor	MOSFET N-CH 30V 35A ATPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 18A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	Package: ATPAK (2 leads+tab)	Stock5,456	MOSFET (Metal Oxide)	30V	35A (Ta)	4.5V, 10V	-	17nC @ 10V	985pF @ 10V	±20V	-	30W (Tc)	17 mOhm @ 18A, 10V	150°C (TJ)	Surface Mount	ATPAK	ATPAK (2 leads+tab)
SI4484EY-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 4.8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 34 mOhm @ 6.9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock42,300	MOSFET (Metal Oxide)	100V	4.8A (Ta)	6V, 10V	2V @ 250µA (Min)	30nC @ 10V	-	±20V	-	1.8W (Ta)	34 mOhm @ 6.9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FQD16N25CTM_F080	Fairchild/ON Semiconductor	MOSFET N-CH 250V 16A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,168	MOSFET (Metal Oxide)	250V	16A (Tc)	10V	4V @ 250µA	53.5nC @ 10V	1080pF @ 25V	±30V	-	160W (Tc)	270 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQI2N90TU	Fairchild/ON Semiconductor	MOSFET N-CH 900V 2.2A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 85W (Tc) Rds On (Max) @ Id, Vgs: 7.2 Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,248	MOSFET (Metal Oxide)	900V	2.2A (Tc)	10V	5V @ 250µA	15nC @ 10V	500pF @ 25V	±30V	-	3.13W (Ta), 85W (Tc)	7.2 Ohm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STV160NF03LAT4	STMicroelectronics	MOSFET N-CH 30V 160A POWERSO-10 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5350pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PowerSO Package / Case: PowerSO-10 Exposed Bottom Pad	Package: PowerSO-10 Exposed Bottom Pad	Stock3,472	MOSFET (Metal Oxide)	30V	160A (Tc)	5V, 10V	1V @ 250µA	160nC @ 10V	5350pF @ 25V	±15V	-	210W (Tc)	3 mOhm @ 80A, 10V	175°C (TJ)	Surface Mount	10-PowerSO	PowerSO-10 Exposed Bottom Pad
STFV4N150	STMicroelectronics	MOSFET N-CH 1500V 4A TO-220FH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 7 Ohm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock2,352	MOSFET (Metal Oxide)	1500V	4A (Tc)	10V	5V @ 250µA	50nC @ 10V	1300pF @ 25V	±30V	-	40W (Tc)	7 Ohm @ 2A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3 Full Pack, Isolated Tab
BUK969R3-100E,118	Nexperia USA Inc.	MOSFET N-CH 100V 100A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 11650pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,848	MOSFET (Metal Oxide)	100V	100A (Tc)	5V, 10V	2.1V @ 1mA	94.3nC @ 5V	11650pF @ 25V	±10V	-	263W (Tc)	8.9 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RS1G180MNTB	Rohm Semiconductor	MOSFET N-CH 40V 18A 8HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 18A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,920	MOSFET (Metal Oxide)	40V	18A (Ta), 80A (Tc)	4.5V, 10V	2.5V @ 1mA	19.5nC @ 10V	1293pF @ 20V	±20V	-	3W (Ta), 30W (Tc)	7 mOhm @ 18A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
AOD2910E	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 37A TO252 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,080	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
DMT3008LFDF-7	Diodes Incorporated	MOSFET N-CH 30V 12A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 886pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock4,592	MOSFET (Metal Oxide)	30V	12A (Ta)	4.5V, 10V	3V @ 250µA	14nC @ 10V	886pF @ 15V	±20V	-	800mW (Ta)	10 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
STH260N6F6-6	STMicroelectronics	MOSFET N-CH 60V 180A H2PAK-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-6 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock3,312	MOSFET (Metal Oxide)	60V	180A (Tc)	10V	4V @ 250µA	183nC @ 10V	11800pF @ 25V	±20V	-	300W (Tc)	2.4 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK-6	TO-263-7, D2Pak (6 Leads + Tab)
BSS214NH6327XTSA1	Infineon Technologies	MOSFET N-CH 20V 1.5A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock49,194	MOSFET (Metal Oxide)	20V	1.5A (Ta)	2.5V, 4.5V	1.2V @ 3.7µA	0.8nC @ 5V	143pF @ 10V	±12V	-	500mW (Ta)	140 mOhm @ 1.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
CSD18509Q5B	Texas Instruments	MOSFET N-CH 40V 100A 8VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13900pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 195W (Tc) Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,232	MOSFET (Metal Oxide)	40V	100A (Ta)	4.5V, 10V	2.2V @ 250µA	195nC @ 10V	13900pF @ 20V	±20V	-	3.1W (Ta), 195W (Tc)	1.2 mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
GT080N10T	Goford Semiconductor	MOSFET N-CH 100V 70A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	-	70A (Tc)	4.5V, 10V	3V @ 250µA	-	-	±20V	-	100W (Tc)	8mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
PJD50N10AL-AU_L2_000A1	Panjit International Inc.	100V N-CHANNEL ENHANCEMENT MODE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock3,891	MOSFET (Metal Oxide)	100 V	6.3A (Ta), 42A (Tc)	4.5V, 10V	2.5V @ 250µA	29 nC @ 10 V	1485 pF @ 30 V	±20V	-	2W (Ta), 83W (Tc)	25mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
MCG53N06AHE3-TP	Micro Commercial Co	Interface FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 53A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: DFN3333 Package / Case: 8-VDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	53A	4.5V, 10V	2.5V @ 250µA	31 nC @ 10 V	1850 pF @ 50 V	±20V	-	45W	8.2mOhm @ 20A, 10V	-55°C ~ 150°C	Surface Mount	DFN3333	8-VDFN Exposed Pad
DMN24H3D6S-13	Diodes Incorporated	MOSFET BVDSS: 101V-250V SOT23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT8065BVFRG	Microchip Technology	MOSFET N-CH 800V 13A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	13A (Tc)	-	4V @ 1mA	225 nC @ 10 V	3700 pF @ 25 V	-	-	-	650mOhm @ 500mA, 10V	-	Through Hole	TO-247 [B]	TO-247-3
PH7730DLX	Nexperia USA Inc.	MOSFET N-CH 30V LFPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SPP06N80C3XK	Infineon Technologies	MOSFET N-CH 800V 6A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	6A (Tc)	10V	3.9V @ 250µA	41 nC @ 10 V	785 pF @ 100 V	±20V	-	83W (Tc)	900mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
HUF75645S3ST_NL	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3790 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	75A (Tc)	10V	4V @ 250µA	238 nC @ 20 V	3790 pF @ 25 V	±20V	-	310W (Tc)	14mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PJMF190N60E1_T0_00001	Panjit International Inc.	600V SUPER JUNCITON MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB-F Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Stock5,793	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	4V @ 250µA	40 nC @ 10 V	1410 pF @ 400 V	±30V	-	38W (Tc)	190mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220AB-F	TO-220-3 Full Pack, Isolated Tab
IPW65R230CFD7AXKSA1	Infineon Technologies	650V COOLMOS CFD7A SJ POWER DEVI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: -	Stock6	MOSFET (Metal Oxide)	650 V	11A (Tc)	10V	4.5V @ 260µA	23 nC @ 10 V	1044 pF @ 400 V	±20V	-	63W (Tc)	230mOhm @ 5.2A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3