Page 1462 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRL530NL
Infineon Technologies

MOSFET N-CH 100V 17A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,032
IXFJ40N30Q
IXYS

MOSFET N-CH TO-220

Package: TO-220-3, Short Tab

Stock3,328
GP1M016A060F
Global Power Technologies Group

MOSFET N-CH 600V 16A TO220F

Package: TO-220-3 Full Pack

Stock3,888
FQB70N08TM
Fairchild/ON Semiconductor

MOSFET N-CH 80V 70A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,600
2SK354700L
Panasonic Electronic Components

MOSFET N-CH 50V .1A SSS-MINI-3P

Package: SOT-723

Stock265,800
IRFD220
Vishay Siliconix

MOSFET N-CH 200V 800MA 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock1,214,796
IPW60R199CP
Infineon Technologies

MOSFET N-CH 600V 16A TO-247

Package: TO-247-3

Stock62,388
IRFR2407PBF
Infineon Technologies

MOSFET N-CH 75V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock431,640
IXTH160N15T
IXYS

MOSFET N-CH 150V 160A TO-247

Package: TO-247-3

Stock390,000
SI7840BDP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 11A PPAK SO-8

Package: PowerPAK? SO-8

Stock12,396
TP5322N8-G
Microchip Technology

MOSFET P-CH 220V 0.26A SOT89-3

Package: TO-243AA

Stock131,784
NTMFS4937NT3G
ON Semiconductor

MOSFET N-CH 30V 10.2A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock7,840
PMPB23XNE,115
Nexperia USA Inc.

MOSFET N-CH 20V 7A 6DFN

Package: 6-UDFN Exposed Pad

Stock7,872
DMN61D9U-13
Diodes Incorporated

MOSFET N-CH 60V 0.38A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock3,264
IXTQ160N10T
IXYS

MOSFET N-CH 100V 160A TO-3P

Package: TO-3P-3, SC-65-3

Stock7,296
PSMN0R9-30YLDX
Nexperia USA Inc.

MOSFET N-CH 30V 100A 56LFPAK

Package: SOT-1023, 4-LFPAK

Stock2,656
STF10NM50N
STMicroelectronics

MOSFET N-CH 500V 7.0A TO220FP

Package: TO-220-3 Full Pack

Stock397,380
STP11N60DM2
STMicroelectronics

N-CHANNEL 600 V, 0.26 OHM TYP.,

Package: TO-220-3

Stock19,020
TN0702N3-G
Microchip Technology

MOSFET N-CH 20V 530MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock15,666
SIRA10DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 60A PPAK SO-8

Package: PowerPAK? SO-8

Stock307,728

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRL530NL	Infineon Technologies	MOSFET N-CH 100V 17A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 79W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,032	MOSFET (Metal Oxide)	100V	17A (Tc)	4V, 10V	2V @ 250µA	34nC @ 5V	800pF @ 25V	±20V	-	3.8W (Ta), 79W (Tc)	100 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IXFJ40N30Q	IXYS	MOSFET N-CH TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-268 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock3,328	MOSFET (Metal Oxide)	300V	40A (Tc)	10V	4V @ 4mA	200nC @ 10V	4800pF @ 25V	±20V	-	300W (Tc)	80 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-268	TO-220-3, Short Tab
GP1M016A060F	Global Power Technologies Group	MOSFET N-CH 600V 16A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3039pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 470 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,888	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	4V @ 250µA	53nC @ 10V	3039pF @ 25V	±30V	-	48W (Tc)	470 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQB70N08TM	Fairchild/ON Semiconductor	MOSFET N-CH 80V 70A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 155W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,600	MOSFET (Metal Oxide)	80V	70A (Tc)	10V	4V @ 250µA	98nC @ 10V	2700pF @ 25V	±25V	-	3.75W (Ta), 155W (Tc)	17 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
2SK354700L	Panasonic Electronic Components	MOSFET N-CH 50V .1A SSS-MINI-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V Vgs (Max): ±7V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SSSMini3-F1 Package / Case: SOT-723	Package: SOT-723	Stock265,800	MOSFET (Metal Oxide)	50V	100mA (Ta)	2.5V, 4V	1.5V @ 1µA	-	12pF @ 3V	±7V	-	100mW (Ta)	12 Ohm @ 10mA, 4V	125°C (TJ)	Surface Mount	SSSMini3-F1	SOT-723
IRFD220	Vishay Siliconix	MOSFET N-CH 200V 800MA 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 800 mOhm @ 480mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock1,214,796	MOSFET (Metal Oxide)	200V	800mA (Ta)	10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	±20V	-	1W (Ta)	800 mOhm @ 480mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IPW60R199CP	Infineon Technologies	MOSFET N-CH 600V 16A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 660µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock62,388	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	3.5V @ 660µA	43nC @ 10V	1520pF @ 100V	±20V	-	139W (Tc)	199 mOhm @ 9.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IRFR2407PBF	Infineon Technologies	MOSFET N-CH 75V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock431,640	MOSFET (Metal Oxide)	75V	42A (Tc)	10V	4V @ 250µA	110nC @ 10V	2400pF @ 25V	±20V	-	110W (Tc)	26 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTH160N15T	IXYS	MOSFET N-CH 150V 160A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock390,000	MOSFET (Metal Oxide)	150V	160A (Tc)	10V	5V @ 1mA	160nC @ 10V	8800pF @ 25V	±30V	-	830W (Tc)	9.6 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
SI7840BDP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 11A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock12,396	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	3V @ 250µA	21nC @ 4.5V	-	±20V	-	1.8W (Ta)	8.5 mOhm @ 16.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
TP5322N8-G	Microchip Technology	MOSFET P-CH 220V 0.26A SOT89-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 220V Current - Continuous Drain (Id) @ 25°C: 260mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 12 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock131,784	MOSFET (Metal Oxide)	220V	260mA (Tj)	4.5V, 10V	2.4V @ 1mA	-	110pF @ 25V	±20V	-	1.6W (Ta)	12 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
NTMFS4937NT3G	ON Semiconductor	MOSFET N-CH 30V 10.2A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2516pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 920mW (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock7,840	MOSFET (Metal Oxide)	30V	10.2A (Ta), 70A (Tc)	4.5V, 10V	2.2V @ 250µA	31nC @ 10V	2516pF @ 15V	±20V	-	920mW (Ta), 43W (Tc)	4 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
PMPB23XNE,115	Nexperia USA Inc.	MOSFET N-CH 20V 7A 6DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN2020MD (2x2) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock7,872	MOSFET (Metal Oxide)	20V	7A (Ta)	1.8V, 4.5V	900mV @ 250µA	17nC @ 4.5V	1136pF @ 10V	±12V	-	1.7W (Ta), 12.5W (Tc)	22 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-DFN2020MD (2x2)	6-UDFN Exposed Pad
DMN61D9U-13	Diodes Incorporated	MOSFET N-CH 60V 0.38A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,264	MOSFET (Metal Oxide)	60V	380mA (Ta)	1.8V, 5V	1V @ 250µA	0.4nC @ 4.5V	28.5pF @ 30V	±20V	-	370mW (Ta)	2 Ohm @ 50mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IXTQ160N10T	IXYS	MOSFET N-CH 100V 160A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 430W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock7,296	MOSFET (Metal Oxide)	100V	160A (Tc)	10V	4.5V @ 250µA	132nC @ 10V	6600pF @ 25V	±30V	-	430W (Tc)	7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
PSMN0R9-30YLDX	Nexperia USA Inc.	MOSFET N-CH 30V 100A 56LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7668pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 349W (Tc) Rds On (Max) @ Id, Vgs: 0.87 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SOT-1023, 4-LFPAK	Package: SOT-1023, 4-LFPAK	Stock2,656	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	2.2V @ 1mA	109nC @ 10V	7668pF @ 15V	±20V	-	349W (Tc)	0.87 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SOT-1023, 4-LFPAK
STF10NM50N	STMicroelectronics	MOSFET N-CH 500V 7.0A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 630 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock397,380	MOSFET (Metal Oxide)	500V	7A (Tc)	10V	4V @ 250µA	17nC @ 10V	450pF @ 50V	±25V	-	25W (Tc)	630 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP11N60DM2	STMicroelectronics	N-CHANNEL 600 V, 0.26 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 614pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock19,020	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	5V @ 250µA	16.5nC @ 10V	614pF @ 100V	±25V	-	110W (Tc)	420 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
TN0702N3-G	Microchip Technology	MOSFET N-CH 20V 530MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 530mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2V, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 500mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock15,666	MOSFET (Metal Oxide)	20V	530mA (Tj)	2V, 5V	1V @ 1mA	-	200pF @ 20V	±20V	-	1W (Tc)	1.3 Ohm @ 500mA, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
SIRA10DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2425pF @ 15V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 5W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock307,728	MOSFET (Metal Oxide)	30V	60A (Tc)	4.5V, 10V	2.2V @ 250µA	51nC @ 10V	2425pF @ 15V	+20V, -16V	-	5W (Ta), 40W (Tc)	3.7 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI2333DDS-T1-GE3	Vishay Siliconix	MOSFET P-CH 12V 6A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1275pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,387,716	MOSFET (Metal Oxide)	12V	6A (Tc)	1.5V, 4.5V	1V @ 250µA	35nC @ 8V	1275pF @ 6V	±8V	-	1.2W (Ta), 1.7W (Tc)	28 mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
AOUS66920	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 86W (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UltraSO-8™ Package / Case: 3-PowerSMD, Flat Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	19.5A (Ta), 69A (Tc)	4.5V, 10V	2.5V @ 250µA	50 nC @ 10 V	2500 pF @ 50 V	±20V	-	6.2W (Ta), 86W (Tc)	8.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	UltraSO-8™	3-PowerSMD, Flat Leads
STL33N60M6	STMicroelectronics	MOSFET 600V 21A POWERFLAT HV FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 137mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat™ (8x8) HV Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	21A (Tc)	10V	4.75V @ 250µA	33.4 nC @ 10 V	1515 pF @ 100 V	±25V	-	150W (Tc)	137mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat™ (8x8) HV	8-PowerVDFN
IRF8707TRPBF-1	Infineon Technologies	MOSFET N-CH 30V 11A 8SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	11A (Ta)	4.5V, 10V	2.35V @ 25µA	9.3 nC @ 4.5 V	760 pF @ 15 V	±20V	-	2.5W (Ta)	11.9mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
R6030JNZC8	Rohm Semiconductor	MOSFET N-CH 600V 30A TO3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 7V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Stock87	MOSFET (Metal Oxide)	600 V	30A (Tc)	15V	7V @ 5.5mA	74 nC @ 15 V	2500 pF @ 100 V	±30V	-	93W (Tc)	143mOhm @ 15A, 15V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
E3M0280090D	Wolfspeed, Inc.	SICFET N-CH 900V 11.5A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V Vgs (Max): +18V, -8V FET Feature: - Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock1,524	SiCFET (Silicon Carbide)	900 V	11.5A (Tc)	15V	3.5V @ 1.2mA	9.5 nC @ 15 V	150 pF @ 600 V	+18V, -8V	-	54W (Tc)	360mOhm @ 7.5A, 15V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
PJS6403_S1_00001	Panjit International Inc.	30V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	Package: -	Stock1,110	MOSFET (Metal Oxide)	30 V	6.4A (Ta)	4.5V, 10V	2.5V @ 250µA	7.8 nC @ 4.5 V	870 pF @ 15 V	±20V	-	2W (Ta)	32mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
MTSF3N03HDR2	onsemi	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-