Page 1468 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRFR4105
Infineon Technologies

MOSFET N-CH 55V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,352
IRL1004STRLPBF
Infineon Technologies

MOSFET N-CH 40V 130A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock21,612
IRF3708STRL
Infineon Technologies

MOSFET N-CH 30V 62A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,744
IRLMS1902TR
Infineon Technologies

MOSFET N-CH 20V 3.2A 6-TSOP

Package: SOT-23-6

Stock250,908
AO4478L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 8SOIC

Package: -

Stock260,376
FDP075N15A
Fairchild/ON Semiconductor

MOSFET N-CH 150V 130A TO-220-3

Package: TO-220-3

Stock56,832
IXTP180N055T
IXYS

MOSFET N-CH 55V 180A TO-220

Package: TO-220-3

Stock103,464
FQU4P25TU
Fairchild/ON Semiconductor

MOSFET P-CH 250V 3.1A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,536
FDD6512A
Fairchild/ON Semiconductor

MOSFET N-CH 20V 10.7A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock168,780
NTMS4P01R2
ON Semiconductor

MOSFET P-CH 12V 3.4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,096
NTP75N03R
ON Semiconductor

MOSFET N-CH 25V 9.7A TO220AB

Package: TO-220-3

Stock60,612
IXTJ6N150
IXYS

MOSFET N-CH 1500V 3A ISOTO-247

Package: TO-247-3

Stock3,728
PCFQ17P10W
Fairchild/Micross Components

DIE MOSFET P-CH 100V

Package: -

Stock4,400
CPH3461-TL-W
ON Semiconductor

MOSFET N-CH 250V 0.35A CPH3

Package: TO-236-3, SC-59, SOT-23-3

Stock3,248
STI20N65M5
STMicroelectronics

MOSFET N-CH 650V 18A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,896
CSD17579Q3AT
Texas Instruments

MOSFET N-CH 30V 35A 8VSON

Package: 8-PowerVDFN

Stock19,176
TPH1400ANH,L1Q
Toshiba Semiconductor and Storage

MOSFET N CH 100V 24A 8-SOP

Package: 8-PowerVDFN

Stock3,264
FDMC7660S
Fairchild/ON Semiconductor

MOSFET N-CH 30V POWER33

Package: 8-PowerTDFN

Stock88,392
DMN3007LSS-13
Diodes Incorporated

MOSFET N-CH 30V 16A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,153,092
DMN2028UFDF-7
Diodes Incorporated

MOSFET N-CH 20V 7.9A U-DFN2020-6

Package: 6-UDFN Exposed Pad

Stock4,128

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRFR4105	Infineon Technologies	MOSFET N-CH 55V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,352	MOSFET (Metal Oxide)	55V	20A (Tc)	10V	4V @ 250µA	34nC @ 10V	700pF @ 25V	±20V	-	68W (Tc)	45 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL1004STRLPBF	Infineon Technologies	MOSFET N-CH 40V 130A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock21,612	MOSFET (Metal Oxide)	40V	130A (Tc)	4.5V, 10V	1V @ 250µA	100nC @ 4.5V	5330pF @ 25V	±16V	-	3.8W (Ta), 200W (Tc)	6.5 mOhm @ 78A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3708STRL	Infineon Technologies	MOSFET N-CH 30V 62A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,744	MOSFET (Metal Oxide)	30V	62A (Tc)	2.8V, 10V	2V @ 250µA	24nC @ 4.5V	2417pF @ 15V	±12V	-	87W (Tc)	12 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLMS1902TR	Infineon Technologies	MOSFET N-CH 20V 3.2A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro6?(TSOP-6) Package / Case: SOT-23-6	Package: SOT-23-6	Stock250,908	MOSFET (Metal Oxide)	20V	3.2A (Ta)	2.7V, 4.5V	700mV @ 250µA	7nC @ 4.5V	300pF @ 15V	±12V	-	1.7W (Ta)	100 mOhm @ 2.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)	SOT-23-6
AO4478L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 8SOIC FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock260,376	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDP075N15A	Fairchild/ON Semiconductor	MOSFET N-CH 150V 130A TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7350pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 333W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock56,832	MOSFET (Metal Oxide)	150V	130A (Tc)	10V	4V @ 250µA	100nC @ 10V	7350pF @ 75V	±20V	-	333W (Tc)	7.5 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXTP180N055T	IXYS	MOSFET N-CH 55V 180A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	55V	180A (Tc)	-	4V @ 1mA	-	-	-	-	-	-	-	Through Hole	TO-220AB	TO-220-3
FQU4P25TU	Fairchild/ON Semiconductor	MOSFET P-CH 250V 3.1A IPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 1.55A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,536	MOSFET (Metal Oxide)	250V	3.1A (Tc)	10V	5V @ 250µA	14nC @ 10V	420pF @ 25V	±30V	-	2.5W (Ta), 45W (Tc)	2.1 Ohm @ 1.55A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDD6512A	Fairchild/ON Semiconductor	MOSFET N-CH 20V 10.7A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1082pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 10.7A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock168,780	MOSFET (Metal Oxide)	20V	10.7A (Ta), 36A (Tc)	2.5V, 4.5V	1.5V @ 250µA	19nC @ 4.5V	1082pF @ 10V	±12V	-	3.8W (Ta), 43W (Tc)	21 mOhm @ 10.7A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
NTMS4P01R2	ON Semiconductor	MOSFET P-CH 12V 3.4A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.15V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 9.6V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 790mW (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,096	MOSFET (Metal Oxide)	12V	3.4A (Ta)	2.5V, 4.5V	1.15V @ 250µA	35nC @ 4.5V	1850pF @ 9.6V	±10V	-	790mW (Ta)	45 mOhm @ 4.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTP75N03R	ON Semiconductor	MOSFET N-CH 25V 9.7A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock60,612	MOSFET (Metal Oxide)	25V	9.7A (Ta)	4.5V, 10V	2V @ 250µA	13.2nC @ 5V	1333pF @ 20V	±20V	-	1.25W (Ta), 74.4W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTJ6N150	IXYS	MOSFET N-CH 1500V 3A ISOTO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3.85 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock3,728	MOSFET (Metal Oxide)	1500V	3A (Tc)	10V	5V @ 250µA	67nC @ 10V	2230pF @ 25V	±30V	-	125W (Tc)	3.85 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
PCFQ17P10W	Fairchild/Micross Components	DIE MOSFET P-CH 100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,400	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CPH3461-TL-W	ON Semiconductor	MOSFET N-CH 250V 0.35A CPH3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 20V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 170mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CPH Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,248	MOSFET (Metal Oxide)	250V	350mA (Ta)	2.5V, 4.5V	1.3V @ 1mA	2.1nC @ 4.5V	140pF @ 20V	±10V	-	1W (Ta)	6.5 Ohm @ 170mA, 4.5V	150°C (TJ)	Surface Mount	3-CPH	TO-236-3, SC-59, SOT-23-3
STI20N65M5	STMicroelectronics	MOSFET N-CH 650V 18A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1434pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,896	MOSFET (Metal Oxide)	650V	18A (Tc)	10V	5V @ 250µA	36nC @ 10V	1434pF @ 100V	±25V	-	130W (Tc)	190 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
CSD17579Q3AT	Texas Instruments	MOSFET N-CH 30V 35A 8VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 998pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 29W (Tc) Rds On (Max) @ Id, Vgs: 10.2 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (3x3.15) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock19,176	MOSFET (Metal Oxide)	30V	20A (Ta)	4.5V, 10V	1.9V @ 250µA	15nC @ 10V	998pF @ 15V	±20V	-	3.2W (Ta), 29W (Tc)	10.2 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSONP (3x3.15)	8-PowerVDFN
TPH1400ANH,L1Q	Toshiba Semiconductor and Storage	MOSFET N CH 100V 24A 8-SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 12A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,264	MOSFET (Metal Oxide)	100V	24A (Tc)	10V	4V @ 300µA	22nC @ 10V	1900pF @ 50V	±20V	-	1.6W (Ta), 48W (Tc)	13.6 mOhm @ 12A, 10V	150°C (TJ)	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
FDMC7660S	Fairchild/ON Semiconductor	MOSFET N-CH 30V POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4325pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock88,392	MOSFET (Metal Oxide)	30V	20A (Ta), 40A (Tc)	4.5V, 10V	2.5V @ 1mA	66nC @ 10V	4325pF @ 15V	±20V	-	2.3W (Ta), 41W (Tc)	2.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power33	8-PowerTDFN
DMN3007LSS-13	Diodes Incorporated	MOSFET N-CH 30V 16A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2714pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,153,092	MOSFET (Metal Oxide)	30V	16A (Ta)	4.5V, 10V	2.1V @ 250µA	64.2nC @ 10V	2714pF @ 15V	±20V	-	2.5W (Ta)	7 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
DMN2028UFDF-7	Diodes Incorporated	MOSFET N-CH 20V 7.9A U-DFN2020-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 907pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 660mW (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock4,128	MOSFET (Metal Oxide)	20V	7.9A (Ta)	1.5V, 4.5V	1V @ 250µA	18nC @ 8V	907pF @ 10V	±8V	-	660mW (Ta)	25 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
SQJA04EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 60V 75A SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock23,082	MOSFET (Metal Oxide)	60V	75A (Tc)	10V	3.5V @ 250µA	55nC @ 10V	3500pF @ 25V	±20V	-	68W (Tc)	6.2 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
IRL630SPBF	Vishay Siliconix	MOSFET N-CH 200V 9A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock38,964	MOSFET (Metal Oxide)	200V	9A (Tc)	4V, 5V	2V @ 250µA	40nC @ 10V	1100pF @ 25V	±10V	-	3.1W (Ta), 74W (Tc)	400 mOhm @ 5.4A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI7148DP-T1-E3	Vishay Siliconix	MOSFET N-CH 75V 28A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 35V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock1,452,612	MOSFET (Metal Oxide)	75V	28A (Tc)	4.5V, 10V	2.5V @ 250µA	100nC @ 10V	2900pF @ 35V	±20V	-	5.4W (Ta), 96W (Tc)	11 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
BUK9209-40B,118	Nexperia USA Inc.	MOSFET N-CH 40V 75A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3619pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 185°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock95,484	MOSFET (Metal Oxide)	40V	75A (Tc)	5V, 10V	2V @ 1mA	32nC @ 5V	3619pF @ 25V	±15V	-	167W (Tc)	7 mOhm @ 25A, 10V	-55°C ~ 185°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
R6030ENZC17	Rohm Semiconductor	MOSFET N-CH 600V 30A TO3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Stock900	MOSFET (Metal Oxide)	600 V	30A (Tc)	10V	4V @ 1mA	85 nC @ 10 V	2100 pF @ 25 V	±20V	-	120W (Tc)	130mOhm @ 14.5A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
IRF200B211XKMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 7.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-904 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	12A (Tc)	10V	4.9V @ 50µA	23 nC @ 10 V	790 pF @ 50 V	±20V	-	80W (Tc)	170mOhm @ 7.2A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-904	TO-220-3
AO3498-ML	MOSLEADER	N 30V 3.8A SOT23-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMP3027LFDEQ-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V U-DFN2020- FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1142 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-PowerUDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	8.5A (Ta)	4.5V, 10V	2.4V @ 250µA	21.8 nC @ 10 V	1142 pF @ 15 V	±20V	-	1W (Ta)	25mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type E)	6-PowerUDFN