Page 1474 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRL3716STRLPBF
Infineon Technologies

MOSFET N-CH 20V 180A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,048
IRF7523D1TR
Infineon Technologies

MOSFET N-CH 30V 2.7A MICRO8

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock48,000
AON4705L
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 4A

Package: 8-SMD, Flat Lead

Stock2,512
NTD32N06LT4G
ON Semiconductor

MOSFET N-CH 60V 32A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock185,880
IPB120N08S404ATMA1
Infineon Technologies

MOSFET N-CH TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,568
IRF9Z34NSPBF
Infineon Technologies

MOSFET P-CH 55V 19A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock66,420
IXTH12N150
IXYS

MOSFET N-CH 1500V 12A TO-247

Package: TO-247-3

Stock6,736
NVMFS5C456NLWFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN

Stock5,744
DMP1011LFV-7
Diodes Incorporated

MOSFET BVDSS: 8V 24V POWERDI3333

Package: 8-PowerVDFN

Stock2,000
IRF7410TRPBF
Infineon Technologies

MOSFET P-CH 12V 16A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock181,536
SQJ422EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 40V 75A PPAK SO-8

Package: PowerPAK? SO-8

Stock6,256
STB13N80K5
STMicroelectronics

MOSFET N-CH 800V 12A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,920
TK50P04M1(T6RSS-Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 50A DP TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock35,610
IPD90N03S4L-02
Infineon Technologies

MOSFET N-CH 30V 90A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock126,684
SIR484DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 20A PPAK SO-8

Package: PowerPAK? SO-8

Stock13,548
RQ6C050UNTR
Rohm Semiconductor

MOSFET N-CH 20V 5A TSMT

Package: SOT-23-6 Thin, TSOT-23-6

Stock161,160
PMK35EP,518
Nexperia USA Inc.

MOSFET P-CH 30V 14.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock248,796
SI7145DP-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 60A PPAK SO-8

Package: PowerPAK? SO-8

Stock6,204
BSS123-TP
Micro Commercial Co

MOSFET N-CH 100V 170MA SOT23

Package: -

Stock15,030
XP2P052N
YAGEO XSEMI

MOSFET P-CH 20V 4A SOT23

Package: -

Stock3,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRL3716STRLPBF	Infineon Technologies	MOSFET N-CH 20V 180A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 79nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5090pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,048	MOSFET (Metal Oxide)	20V	180A (Tc)	4.5V, 10V	3V @ 250µA	79nC @ 4.5V	5090pF @ 10V	±20V	-	210W (Tc)	4 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF7523D1TR	Infineon Technologies	MOSFET N-CH 30V 2.7A MICRO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 130 mOhm @ 1.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8? Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock48,000	MOSFET (Metal Oxide)	30V	2.7A (Ta)	4.5V, 10V	1V @ 250µA	12nC @ 10V	210pF @ 25V	±20V	Schottky Diode (Isolated)	1.25W (Ta)	130 mOhm @ 1.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Micro8?	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
AON4705L	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 20V 4A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3x2) Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock2,512	MOSFET (Metal Oxide)	20V	4A (Ta)	1.8V, 4.5V	1V @ 250µA	11nC @ 4.5V	745pF @ 10V	±8V	Schottky Diode (Isolated)	1.7W (Ta)	65 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (3x2)	8-SMD, Flat Lead
NTD32N06LT4G	ON Semiconductor	MOSFET N-CH 60V 32A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj) Rds On (Max) @ Id, Vgs: 28 mOhm @ 16A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock185,880	MOSFET (Metal Oxide)	60V	32A (Ta)	5V	2V @ 250µA	50nC @ 5V	1700pF @ 25V	±20V	-	1.5W (Ta), 93.75W (Tj)	28 mOhm @ 16A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IPB120N08S404ATMA1	Infineon Technologies	MOSFET N-CH TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,568	MOSFET (Metal Oxide)	80V	120A (Tc)	10V	4V @ 120µA	95nC @ 10V	6450pF @ 25V	±20V	-	179W (Tc)	4.1 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9Z34NSPBF	Infineon Technologies	MOSFET P-CH 55V 19A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock66,420	MOSFET (Metal Oxide)	55V	19A (Tc)	10V	4V @ 250µA	35nC @ 10V	620pF @ 25V	±20V	-	3.8W (Ta), 68W (Tc)	100 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTH12N150	IXYS	MOSFET N-CH 1500V 12A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,736	MOSFET (Metal Oxide)	1500V	12A (Tc)	10V	4.5V @ 250µA	106nC @ 10V	3720pF @ 25V	±30V	-	890W (Tc)	2 Ohm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
NVMFS5C456NLWFT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,744	MOSFET (Metal Oxide)	40V	-	4.5V, 10V	2V @ 250µA	18nC @ 10V	1600pF @ 25V	±20V	-	3.6W (Ta), 55W (Tc)	3.7 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
DMP1011LFV-7	Diodes Incorporated	MOSFET BVDSS: 8V 24V POWERDI3333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 6V Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 6V Vgs (Max): -6V FET Feature: - Power Dissipation (Max): 2.16W Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 12A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock2,000	MOSFET (Metal Oxide)	12V	19A (Tc)	2.5V, 4.5V	1.2V @ 250µA	9.5nC @ 6V	913pF @ 6V	-6V	-	2.16W	11.7 mOhm @ 12A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerVDFN
IRF7410TRPBF	Infineon Technologies	MOSFET P-CH 12V 16A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 8676pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock181,536	MOSFET (Metal Oxide)	12V	16A (Ta)	1.8V, 4.5V	900mV @ 250µA	91nC @ 4.5V	8676pF @ 10V	±8V	-	2.5W (Ta)	7 mOhm @ 16A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SQJ422EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 75A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock6,256	MOSFET (Metal Oxide)	40V	74A (Tc)	4.5V, 10V	2.5V @ 250µA	100nC @ 10V	4660pF @ 20V	±20V	-	83W (Tc)	3.4 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
STB13N80K5	STMicroelectronics	MOSFET N-CH 800V 12A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,920	MOSFET (Metal Oxide)	800V	12A (Tc)	10V	5V @ 100µA	29nC @ 10V	870pF @ 100V	±30V	-	190W (Tc)	450 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TK50P04M1(T6RSS-Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 50A DP TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 25A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DP Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock35,610	MOSFET (Metal Oxide)	40V	50A (Ta)	4.5V, 10V	2.3V @ 500µA	38nC @ 10V	2600pF @ 10V	±20V	-	60W (Tc)	8.7 mOhm @ 25A, 10V	150°C (TJ)	Surface Mount	DP	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD90N03S4L-02	Infineon Technologies	MOSFET N-CH 30V 90A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock126,684	MOSFET (Metal Oxide)	30V	90A (Tc)	4.5V, 10V	2.2V @ 90µA	140nC @ 10V	9750pF @ 25V	±16V	-	136W (Tc)	2.2 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SIR484DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 20A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc) Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 17.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock13,548	MOSFET (Metal Oxide)	20V	20A (Tc)	4.5V, 10V	2.5V @ 250µA	23nC @ 10V	830pF @ 10V	±20V	-	3.9W (Ta), 29.8W (Tc)	8.3 mOhm @ 17.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
RQ6C050UNTR	Rohm Semiconductor	MOSFET N-CH 20V 5A TSMT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock161,160	MOSFET (Metal Oxide)	20V	5A (Ta)	1.5V, 4.5V	1V @ 1mA	12nC @ 4.5V	900pF @ 10V	±10V	-	1.25W (Ta)	30 mOhm @ 5A, 4.5V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
PMK35EP,518	Nexperia USA Inc.	MOSFET P-CH 30V 14.9A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 6.9W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 9.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock248,796	MOSFET (Metal Oxide)	30V	14.9A (Tc)	10V	3V @ 250µA	42nC @ 10V	2100pF @ 25V	±25V	-	6.9W (Tc)	19 mOhm @ 9.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI7145DP-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 60A PPAK SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 413nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15660pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock6,204	MOSFET (Metal Oxide)	30V	60A (Tc)	4.5V, 10V	2.3V @ 250µA	413nC @ 10V	15660pF @ 15V	±20V	-	6.25W (Ta), 104W (Tc)	2.6 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
BSS123-TP	Micro Commercial Co	MOSFET N-CH 100V 170MA SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 170mA Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock15,030	MOSFET (Metal Oxide)	100 V	170mA Tj)	4.5V, 10V	2.8V @ 250µA	2 nC @ 10 V	60 pF @ 25 V	±20V	-	350mW	6Ohm @ 170mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
XP2P052N	YAGEO XSEMI	MOSFET P-CH 20V 4A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock3,000	MOSFET (Metal Oxide)	20 V	4A (Ta)	1.8V, 4.5V	1V @ 250µA	14.4 nC @ 4.5 V	1440 pF @ 10 V	±8V	-	1.25W (Ta)	52mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
BTS132E3045ANTMA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO220-3-5 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	24A (Tc)	4.5V	2.5V @ 1mA	-	1400 pF @ 25 V	±20V	-	75W	65mOhm @ 12A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO220-3-5	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STWA75N60DM6	STMicroelectronics	MOSFET N-CH 600V 72A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: -	Stock1,083	MOSFET (Metal Oxide)	600 V	72A (Tc)	-	-	-	-	±25V	-	-	-	-	Through Hole	TO-247 Long Leads	TO-247-3
RTL020P02FRATR	Rohm Semiconductor	MOSFET P-CH 20V 2A TUMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: TUMT6 Package / Case: 6-SMD, Flat Leads	Package: -	Stock13,296	MOSFET (Metal Oxide)	20 V	2A (Ta)	2.5V, 4.5V	2V @ 1mA	4.9 nC @ 4.5 V	430 pF @ 10 V	±12V	-	1W (Ta)	135mOhm @ 2A, 4.5V	150°C	Surface Mount	TUMT6	6-SMD, Flat Leads
IRFR222	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	3.8A (Tc)	10V	4V @ 250µA	18 nC @ 10 V	330 pF @ 25 V	±20V	-	50W (Tc)	1.2Ohm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMN10H170SFGQ-7	Diodes Incorporated	MOSFET N-CH 100V PWRDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 940mW (Ta) Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	2.9A (Ta), 8.5A (Tc)	4.5V, 10V	3V @ 250µA	14.9 nC @ 10 V	870.7 pF @ 25 V	±20V	-	940mW (Ta)	122mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN
RFL1N12	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8.33W (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	Package: -	Request a Quote	MOSFET (Metal Oxide)	120 V	1A (Tc)	10V	4V @ 250µA	-	200 pF @ 25 V	±20V	-	8.33W (Tc)	1.9Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-205AF (TO-39)	TO-205AF Metal Can
STW75N60M6-4	STMicroelectronics	MOSFET N-CH 600V 72A TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 36A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Stock1,755	MOSFET (Metal Oxide)	600 V	72A (Tc)	10V	4.75V @ 250µA	106 nC @ 10 V	4850 pF @ 100 V	±25V	-	446W (Tc)	36mOhm @ 36A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-4	TO-247-4
E3M0060065K	Wolfspeed, Inc.	60M 650V SIC AUTOMOTIVE MOSFET FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.6V @ 3.6mA Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V Vgs (Max): +19V, -8V FET Feature: - Power Dissipation (Max): 131W (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Stock117	SiCFET (Silicon Carbide)	650 V	37A (Tc)	15V	3.6V @ 3.6mA	49 nC @ 15 V	1170 pF @ 600 V	+19V, -8V	-	131W (Tc)	79mOhm @ 13.2A, 15V	-40°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4