Page 1472 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPP80N04S2H4AKSA1
Infineon Technologies

MOSFET N-CH 40V 80A TO220-3

Package: TO-220-3

Stock7,888
2N7227U
Microsemi Corporation

MOSFET N-CH 400V SMD1

Package: TO-267AB

Stock7,424
FCI25N60N
Fairchild/ON Semiconductor

MOSFET N-CH 600V 25A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,136
NTB6412ANG
ON Semiconductor

MOSFET N-CH 100V 58A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,664
SI7448DP-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 13.4A PPAK SO-8

Package: PowerPAK? SO-8

Stock15,564
SI4446DY-T1-E3
Vishay Siliconix

MOSFET N-CH 40V 3.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,323,048
STW70N10F4
STMicroelectronics

MOSFET N-CH 100V 65A TO-247

Package: TO-247-3

Stock738,000
IXFN32N120P
IXYS

MOSFET N-CH 1200V 32A SOT-227B

Package: SOT-227-4, miniBLOC

Stock2,112
NTHS5441T1G
ON Semiconductor

MOSFET P-CH 20V 3.9A CHIPFET

Package: 8-SMD, Flat Lead

Stock2,125,956
AON3419
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 10A DFN

Package: 8-SMD, Flat Lead

Stock5,984
NDS8434
Fairchild/ON Semiconductor

MOSFET P-CH 20V 6.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock15,708
STFI20NK50Z
STMicroelectronics

MOSFET N-CH 500V 17A I2PAK FP

Package: TO-262-3 Full Pack, I2Pak

Stock5,648
IRFL014TRPBF
Vishay Siliconix

MOSFET N-CH 60V 2.7A SOT223

Package: TO-261-4, TO-261AA

Stock24,600
PJA3401_R1_00001
Panjit International Inc.

SOT-23, MOSFET

Package: -

Stock21,273
DMT67M8LCG-7
Diodes Incorporated

MOSFET N-CH 60V 16A/64.6A 8DFN

Package: -

Request a Quote
SSU2N60BTU
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
IXTA34N65X2-TRL
IXYS

MOSFET N-CH 650V 34A TO263

Package: -

Request a Quote
RD3R02BBHTL1
Rohm Semiconductor

NCH 150V 20A, TO-252, POWER MOSF

Package: -

Stock7,464
3LN02M-TL-E
onsemi

NCH 1.5V DRIVE SERIES

Package: -

Request a Quote
MSC060SMA070B4
Microchip Technology

TRANS SJT N-CH 700V 39A TO247-4

Package: -

Stock216

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPP80N04S2H4AKSA1	Infineon Technologies	MOSFET N-CH 40V 80A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock7,888	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	148nC @ 10V	4400pF @ 25V	±20V	-	300W (Tc)	4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
2N7227U	Microsemi Corporation	MOSFET N-CH 400V SMD1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 315 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	Package: TO-267AB	Stock7,424	MOSFET (Metal Oxide)	400V	14A (Tc)	10V	4V @ 250µA	110nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	315 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-267AB	TO-267AB
FCI25N60N	Fairchild/ON Semiconductor	MOSFET N-CH 600V 25A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3352pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 216W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,136	MOSFET (Metal Oxide)	600V	25A (Tc)	10V	4V @ 250µA	74nC @ 10V	3352pF @ 100V	±30V	-	216W (Tc)	125 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
NTB6412ANG	ON Semiconductor	MOSFET N-CH 100V 58A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 18.2 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,664	MOSFET (Metal Oxide)	100V	58A (Tc)	10V	4V @ 250µA	100nC @ 10V	3500pF @ 25V	±20V	-	167W (Tc)	18.2 mOhm @ 58A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI7448DP-T1-E3	Vishay Siliconix	MOSFET N-CH 20V 13.4A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 22A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock15,564	MOSFET (Metal Oxide)	20V	13.4A (Ta)	2.5V, 4.5V	1.5V @ 250µA	50nC @ 4.5V	-	±12V	-	1.9W (Ta)	6.5 mOhm @ 22A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI4446DY-T1-E3	Vishay Siliconix	MOSFET N-CH 40V 3.9A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 5.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,323,048	MOSFET (Metal Oxide)	40V	3.9A (Ta)	4.5V, 10V	1.6V @ 250µA	12nC @ 4.5V	700pF @ 20V	±12V	-	1.1W (Ta)	40 mOhm @ 5.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STW70N10F4	STMicroelectronics	MOSFET N-CH 100V 65A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock738,000	MOSFET (Metal Oxide)	100V	65A (Tc)	10V	4V @ 250µA	85nC @ 10V	5800pF @ 25V	±20V	-	150W (Tc)	19.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXFN32N120P	IXYS	MOSFET N-CH 1200V 32A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 32A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 21000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1000W (Tc) Rds On (Max) @ Id, Vgs: 310 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock2,112	MOSFET (Metal Oxide)	1200V	32A	10V	6.5V @ 1mA	360nC @ 10V	21000pF @ 25V	±30V	-	1000W (Tc)	310 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
NTHS5441T1G	ON Semiconductor	MOSFET P-CH 20V 3.9A CHIPFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 5V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock2,125,956	MOSFET (Metal Oxide)	20V	3.9A (Ta)	2.5V, 4.5V	1.2V @ 250µA	22nC @ 4.5V	710pF @ 5V	±12V	-	1.3W (Ta)	46 mOhm @ 3.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET?	8-SMD, Flat Lead
AON3419	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 10A DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 19 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (2.9x2.3) Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock5,984	MOSFET (Metal Oxide)	30V	10A (Tc)	4.5V, 10V	2.5V @ 250µA	30nC @ 10V	1040pF @ 15V	±20V	-	3.1W (Ta)	19 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (2.9x2.3)	8-SMD, Flat Lead
NDS8434	Fairchild/ON Semiconductor	MOSFET P-CH 20V 6.5A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock15,708	MOSFET (Metal Oxide)	20V	6.5A (Ta)	2.7V, 4.5V	1V @ 250µA	80nC @ 4.5V	2330pF @ 10V	±8V	-	2.5W (Ta)	35 mOhm @ 6.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STFI20NK50Z	STMicroelectronics	MOSFET N-CH 500V 17A I2PAK FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock5,648	MOSFET (Metal Oxide)	500V	17A (Tc)	10V	4.5V @ 100µA	119nC @ 10V	2600pF @ 25V	±30V	-	40W (Tc)	270 mOhm @ 8.5A, 10V	150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
IRFL014TRPBF	Vishay Siliconix	MOSFET N-CH 60V 2.7A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock24,600	MOSFET (Metal Oxide)	60V	2.7A (Tc)	10V	4V @ 250µA	11nC @ 10V	300pF @ 25V	±20V	-	2W (Ta), 3.1W (Tc)	200 mOhm @ 1.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
PJA3401_R1_00001	Panjit International Inc.	SOT-23, MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock21,273	MOSFET (Metal Oxide)	30 V	3.6A (Ta)	2.5V, 10V	1.3V @ 250µA	15 nC @ 10 V	633 pF @ 15 V	±12V	-	1.25W (Ta)	72mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
DMT67M8LCG-7	Diodes Incorporated	MOSFET N-CH 60V 16A/64.6A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 64.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: V-DFN3333-8 (Type B) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	16A (Ta), 64.6A (Tc)	4.5V, 10V	2.5V @ 250µA	37.5 nC @ 10 V	2130 pF @ 30 V	±20V	-	900mW (Ta)	5.7mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	V-DFN3333-8 (Type B)	8-PowerVDFN
SSU2N60BTU	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	1.8A (Tc)	10V	4V @ 250µA	17 nC @ 10 V	490 pF @ 25 V	±30V	-	2.5W (Ta), 44W (Tc)	5Ohm @ 900mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
IXTA34N65X2-TRL	IXYS	MOSFET N-CH 650V 34A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	34A (Tc)	10V	5V @ 250µA	54 nC @ 10 V	3000 pF @ 25 V	±30V	-	540W (Tc)	96mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RD3R02BBHTL1	Rohm Semiconductor	NCH 150V 20A, TO-252, POWER MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,464	MOSFET (Metal Oxide)	150 V	20A (Tc)	6V, 10V	4V @ 1mA	12.4 nC @ 10 V	730 pF @ 75 V	±20V	-	50W (Tc)	81mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
3LN02M-TL-E	onsemi	NCH 1.5V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MSC060SMA070B4	Microchip Technology	TRANS SJT N-CH 700V 39A TO247-4 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 143W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Stock216	SiCFET (Silicon Carbide)	700 V	39A (Tc)	20V	2.4V @ 1mA	56 nC @ 20 V	1175 pF @ 700 V	+23V, -10V	-	143W (Tc)	75mOhm @ 20A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
HAT1091C0S-EL-E	Renesas	HAT1091C0S - P-CHANNEL POWER MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVMYS1D6N04CLTWG	onsemi	T6 40V LL AIZU SINGLE NCH LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 210µA Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK4 (5x6) Package / Case: SOT-1023, 4-LFPAK	Package: -	Stock9,000	MOSFET (Metal Oxide)	40 V	35A (Ta), 185A (Tc)	4.5V, 10V	3V @ 210µA	71 nC @ 10 V	4301 pF @ 25 V	±20V	-	3.8W (Ta), 107.1W (Tc)	1.6mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK4 (5x6)	SOT-1023, 4-LFPAK
SQ4483EY-T1_GE3	Vishay Siliconix	MOSFET P-CHANNEL 30V 30A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock7,395	MOSFET (Metal Oxide)	30 V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	113 nC @ 10 V	4500 pF @ 15 V	±20V	-	7W (Tc)	8.5mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
2SK2858-T1-A	Renesas Electronics Corporation	MOSFET N-CH 30V 100MA SC70-3 SSP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.8V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 3 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 5Ohm @ 10mA, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SC-70-3, SSP, Miniature Mini Mold Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	100mA (Ta)	-	1.8V @ 10µA	-	9 pF @ 3 V	-	-	-	5Ohm @ 10mA, 10V	-	Surface Mount	SC-70-3, SSP, Miniature Mini Mold	SC-70, SOT-323
AONS66609	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 50A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 304A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6350 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 215W (Tc) Rds On (Max) @ Id, Vgs: 1.25mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: -	Stock9,000	MOSFET (Metal Oxide)	60 V	50A (Ta), 304A (Tc)	8V, 10V	3.3V @ 250µA	126 nC @ 10 V	6350 pF @ 30 V	±20V	-	6.2W (Ta), 215W (Tc)	1.25mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
SI2323CDS-T1-GE3-ML	MOSLEADER	P -20V 6A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AO4466L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 9.4A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 9.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	9.4A (Ta)	4.5V, 10V	3V @ 250µA	17 nC @ 10 V	820 pF @ 15 V	±20V	-	3.1W (Ta)	23mOhm @ 9.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
RS6P100BHTB1	Rohm Semiconductor	NCH 100V 100A, HSOP8, POWER MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: -	Stock10,470	MOSFET (Metal Oxide)	100 V	100A (Tc)	6V, 10V	4V @ 1mA	45 nC @ 10 V	2880 pF @ 50 V	±20V	-	104W (Tc)	5.9mOhm @ 90A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN