Page 1471 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRFR8401
Infineon Technologies

MOSFET N-CH 40V 100A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,216
IPI80N04S306AKSA1
Infineon Technologies

MOSFET N-CH 40V 80A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,952
PHP101NQ04T,127
NXP

MOSFET N-CH 40V 75A TO220AB

Package: TO-220-3

Stock3,088
FDD3570
Fairchild/ON Semiconductor

MOSFET N-CH 80V 10A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock36,852
IPB70N12S311ATMA1
Infineon Technologies

MOSFET N-CHANNEL_100+

Package: -

Stock5,440
IPD60R800CEAUMA1
Infineon Technologies

CONSUMER

Package: -

Stock7,376
BSS670S2LH6433XTMA1
Infineon Technologies

MOSFET N-CH 55V 540MA SOT23

Package: -

Stock7,568
VMO550-01F
IXYS

MOSFET N-CH 100V 590A Y3-DCB

Package: Y3-DCB

Stock3,264
AOK9N90
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 900V 9A TO247

Package: TO-247-3

Stock4,352
NTDV20N06LT4G-VF01
ON Semiconductor

MOSFET N-CH 60V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,100
DMN3007LSSQ-13
Diodes Incorporated

MOSFET BVDSS: 25V 30V SO-8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,024
DMN10H170SFDE-13
Diodes Incorporated

MOSFET N-CH 100V 2.9A 6UDFN

Package: 6-UDFN Exposed Pad

Stock7,808
CSD19534KCS
Texas Instruments

MOSFET N-CH 100V 100A TO220

Package: TO-220-3

Stock7,968
APT11N80BC3G
Microsemi Corporation

MOSFET N-CH 800V 11A TO-247

Package: TO-247-3

Stock6,288
SPP08N50C3XKSA1
Infineon Technologies

MOSFET N-CH 560V 7.6A TO-220AB

Package: TO-220-3

Stock6,060
DMN30H14DLY-13
Diodes Incorporated

MOSFET N-CH 300V .21A SOT-89

Package: TO-243AA

Stock3,328
NTMFS4821NT1G
ON Semiconductor

MOSFET N-CH 30V 8.8A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock143,436
AO6409
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 5.5A 6TSOP

Package: SC-74, SOT-457

Stock11,822,064
FDS3590
Fairchild/ON Semiconductor

MOSFET N-CH 80V 6.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock538,404
DMN3016LSS-13
Diodes Incorporated

MOSFET N-CH 30V 10.3A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock25,386

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRFR8401	Infineon Technologies	MOSFET N-CH 40V 100A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 4.25 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,216	MOSFET (Metal Oxide)	40V	100A (Tc)	10V	3.9V @ 50µA	63nC @ 10V	2200pF @ 25V	±20V	-	79W (Tc)	4.25 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPI80N04S306AKSA1	Infineon Technologies	MOSFET N-CH 40V 80A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 52µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,952	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 52µA	47nC @ 10V	3250pF @ 25V	±20V	-	100W (Tc)	5.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
PHP101NQ04T,127	NXP	MOSFET N-CH 40V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,088	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 1mA	36.6nC @ 10V	2020pF @ 25V	±20V	-	157W (Tc)	8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDD3570	Fairchild/ON Semiconductor	MOSFET N-CH 80V 10A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.4W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock36,852	MOSFET (Metal Oxide)	80V	10A (Ta)	6V, 10V	4V @ 250µA	76nC @ 10V	2800pF @ 40V	±20V	-	3.4W (Ta), 69W (Tc)	20 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
IPB70N12S311ATMA1	Infineon Technologies	MOSFET N-CHANNEL_100+ FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,440	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD60R800CEAUMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,376	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSS670S2LH6433XTMA1	Infineon Technologies	MOSFET N-CH 55V 540MA SOT23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,568	-	-	-	4.5V, 10V	-	-	-	±20V	-	-	-	-	-	-	-
VMO550-01F	IXYS	MOSFET N-CH 100V 590A Y3-DCB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 590A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6V @ 110mA Gate Charge (Qg) (Max) @ Vgs: 2000nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2200W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 500mA, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Y3-DCB Package / Case: Y3-DCB	Package: Y3-DCB	Stock3,264	MOSFET (Metal Oxide)	100V	590A	10V	6V @ 110mA	2000nC @ 10V	50000pF @ 25V	±20V	-	2200W (Tc)	2.1 mOhm @ 500mA, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	Y3-DCB	Y3-DCB
AOK9N90	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 900V 9A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 368W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock4,352	MOSFET (Metal Oxide)	900V	9A (Tc)	10V	4.5V @ 250µA	58nC @ 10V	2560pF @ 25V	±30V	-	368W (Tc)	1.3 Ohm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
NTDV20N06LT4G-VF01	ON Semiconductor	MOSFET N-CH 60V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 60W (Tj) Rds On (Max) @ Id, Vgs: 48 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,100	MOSFET (Metal Oxide)	60V	20A (Ta)	5V	2V @ 250µA	32nC @ 5V	990pF @ 25V	±15V	-	1.36W (Ta), 60W (Tj)	48 mOhm @ 10A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
DMN3007LSSQ-13	Diodes Incorporated	MOSFET BVDSS: 25V 30V SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2714pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,024	MOSFET (Metal Oxide)	30V	16A (Ta)	4.5V, 10V	2.1V @ 250µA	64.2nC @ 10V	2714pF @ 15V	±20V	-	2.5W	7 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
DMN10H170SFDE-13	Diodes Incorporated	MOSFET N-CH 100V 2.9A 6UDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 660mW (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock7,808	MOSFET (Metal Oxide)	100V	2.9A (Ta)	4.5V, 10V	3V @ 250µA	9.7nC @ 10V	1167pF @ 25V	±20V	-	660mW (Ta)	160 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type E)	6-UDFN Exposed Pad
CSD19534KCS	Texas Instruments	MOSFET N-CH 100V 100A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 118W (Tc) Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock7,968	MOSFET (Metal Oxide)	100V	100A (Ta)	6V, 10V	3.4V @ 250µA	22.2nC @ 10V	1670pF @ 50V	±20V	-	118W (Tc)	16.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
APT11N80BC3G	Microsemi Corporation	MOSFET N-CH 800V 11A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 680µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: TO-247-3	Stock6,288	MOSFET (Metal Oxide)	800V	11A (Tc)	10V	3.9V @ 680µA	60nC @ 10V	1585pF @ 25V	±20V	-	156W (Tc)	450 mOhm @ 7.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
SPP08N50C3XKSA1	Infineon Technologies	MOSFET N-CH 560V 7.6A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock6,060	MOSFET (Metal Oxide)	560V	7.6A (Tc)	10V	3.9V @ 350µA	32nC @ 10V	750pF @ 25V	±20V	-	83W (Tc)	600 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
DMN30H14DLY-13	Diodes Incorporated	MOSFET N-CH 300V .21A SOT-89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 96pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 14 Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	Package: TO-243AA	Stock3,328	MOSFET (Metal Oxide)	300V	210mA (Ta)	4.5V, 10V	3V @ 250µA	4nC @ 10V	96pF @ 25V	±20V	-	900mW (Ta)	14 Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-89	TO-243AA
NTMFS4821NT1G	ON Semiconductor	MOSFET N-CH 30V 8.8A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 58.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 870mW (Ta), 38.5W (Tc) Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock143,436	MOSFET (Metal Oxide)	30V	8.8A (Ta), 58.5A (Tc)	4.5V, 10V	2.5V @ 250µA	16nC @ 4.5V	1400pF @ 12V	±20V	-	870mW (Ta), 38.5W (Tc)	6.95 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
AO6409	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 20V 5.5A 6TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock11,822,064	MOSFET (Metal Oxide)	20V	5.5A (Ta)	1.8V, 4.5V	1V @ 250µA	17.2nC @ 4.5V	1450pF @ 10V	±8V	-	2.1W (Ta)	45 mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
FDS3590	Fairchild/ON Semiconductor	MOSFET N-CH 80V 6.5A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 39 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock538,404	MOSFET (Metal Oxide)	80V	6.5A (Ta)	6V, 10V	4V @ 250µA	35nC @ 10V	1180pF @ 40V	±20V	-	2.5W (Ta)	39 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
DMN3016LSS-13	Diodes Incorporated	MOSFET N-CH 30V 10.3A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock25,386	MOSFET (Metal Oxide)	30V	10.3A (Ta)	4.5V, 10V	2.5V @ 250µA	25.1nC @ 10V	1415pF @ 15V	±20V	-	1.5W (Ta)	12 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NTH4L060N065SC1	onsemi	SIC MOS TO247-4L 650V FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V Vgs (Max): +22V, -8V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Stock1,980	SiCFET (Silicon Carbide)	650 V	47A (Tc)	15V, 18V	4.3V @ 6.5mA	74 nC @ 18 V	1473 pF @ 325 V	+22V, -8V	-	176W (Tc)	70mOhm @ 20A, 18V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
UF3SC065030D8S	Qorvo	SICFET N-CH 650V 18A 4DFN FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 20A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-DFN (8x8) Package / Case: 4-PowerTSFN	Package: -	Request a Quote	SiCFET (Cascode SiCJFET)	650 V	18A (Tc)	12V	6V @ 10mA	43 nC @ 12 V	1500 pF @ 100 V	±25V	-	179W (Tc)	42mOhm @ 20A, 12V	-55°C ~ 150°C (TJ)	Surface Mount	4-DFN (8x8)	4-PowerTSFN
APT50M85JVFR	Microchip Technology	MOSFET N-CH 500V 50A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 535 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	50A (Tc)	-	4V @ 1mA	535 nC @ 10 V	10800 pF @ 25 V	-	-	-	85mOhm @ 500mA, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
NVMFS5C450NLWFAFT1G	onsemi	MOSFET N-CH 40V 110A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	110A (Tc)	4.5V, 10V	2V @ 250µA	35 nC @ 10 V	2100 pF @ 20 V	±20V	-	68W (Tc)	2.8mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
PJP35N06A_T0_00001	Panjit International Inc.	60V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	4.7A (Ta), 35A (Tc)	4.5V, 10V	2.5V @ 250µA	28 nC @ 10 V	1680 pF @ 20 V	±20V	-	2W (Ta), 104W (Tc)	21mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
BSC023N08NS5SCATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 202A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 115µA Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-WSON-8-2 Package / Case: 8-PowerWDFN	Package: -	Stock6,060	MOSFET (Metal Oxide)	80 V	202A (Tc)	6V, 10V	3.8V @ 115µA	98 nC @ 10 V	6800 pF @ 40 V	±20V	-	188W (Tc)	2.3mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-WSON-8-2	8-PowerWDFN
APT8043SFLLG	Microchip Technology	MOSFET N-CH 800V 20A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 430mOhm @ 10A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	20A (Tc)	-	5V @ 1mA	85 nC @ 10 V	2500 pF @ 25 V	-	-	-	430mOhm @ 10A, 10V	-	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
SCT3040KW7TL	Rohm Semiconductor	SICFET N-CH 1200V 56A TO263-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5.6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 267W Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock2,994	SiCFET (Silicon Carbide)	1200 V	56A (Tc)	-	5.6V @ 10mA	107 nC @ 18 V	1337 pF @ 800 V	+22V, -4V	-	267W	52mOhm @ 20A, 18V	175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA