Page 1482 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPS050N03LGBKMA1
Infineon Technologies

MOSFET N-CHANNEL 30V 50A TO251-3

Package: TO-251-3 Stub Leads, IPak

Stock6,336
IRFR3711ZTRL
Infineon Technologies

MOSFET N-CH 20V 93A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock36,000
IRF3205L
Infineon Technologies

MOSFET N-CH 55V 110A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,144
IXTA220N055T7
IXYS

MOSFET N-CH 55V 220A TO-263-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock6,816
NTD18N06-001
ON Semiconductor

MOSFET N-CH 60V 18A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,592
PHT6N06T,135
NXP

MOSFET N-CH 55V 5.5A SOT223

Package: TO-261-4, TO-261AA

Stock5,536
IXFK21N100Q
IXYS

MOSFET N-CH 1000V 21A TO-264

Package: TO-264-3, TO-264AA

Stock80,400
IXFX30N50Q
IXYS

MOSFET N-CH 500V 30A PLUS247

Package: TO-247-3

Stock5,456
PMPB20ENZ
Nexperia USA Inc.

MOSFET N-CH 30V 7.2A 6DFN

Package: 6-UDFN Exposed Pad

Stock4,160
R6012ANX
Rohm Semiconductor

MOSFET N-CH 600V 12A TO-220FM

Package: TO-220-2 Full Pack

Stock4,880
FDMS4435BZ
Fairchild/ON Semiconductor

MOSFET P-CH 30V 9A POWER56

Package: 8-PowerTDFN

Stock36,012
AON6794
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 39A DFN

Package: 8-PowerSMD, Flat Leads

Stock115,200
STP12NM50FP
STMicroelectronics

MOSFET N-CH 500V 12A TO220FP

Package: TO-220-3 Full Pack

Stock558,624
IPP029N06NAKSA1
Infineon Technologies

MOSFET N-CH 60V 24A TO220

Package: TO-220-3

Stock13,662
IRFD9210PBF
Vishay Siliconix

MOSFET P-CH 200V 0.4A 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock71,640
FQP30N06
Fairchild/ON Semiconductor

MOSFET N-CH 60V 30A TO-220

Package: TO-220-3

Stock15,900
STB12NM50ND
STMicroelectronics

MOSFET N-CH 500V 11A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock23,040
SQJQ144AE-T1_GE3
Vishay Siliconix

MOSFET N-CH 40V 575A PPAK 8 X 8

Package: -

Request a Quote
NTGS3433T1
onsemi

MOSFET P-CH 12V 3.3A 6-TSOP

Package: -

Request a Quote
IXFH78N60X3
IXYS

MOSFET ULTRA JCT 600V 78A TO247

Package: -

Stock3

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPS050N03LGBKMA1	Infineon Technologies	MOSFET N-CHANNEL 30V 50A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 15V Vgs (Max): - FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock6,336	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2.2V @ 250µA	31nC @ 10V	3200pF @ 15V	-	-	68W (Tc)	5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Stub Leads, IPak
IRFR3711ZTRL	Infineon Technologies	MOSFET N-CH 20V 93A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock36,000	MOSFET (Metal Oxide)	20V	93A (Tc)	4.5V, 10V	2.45V @ 250µA	27nC @ 4.5V	2160pF @ 10V	±20V	-	79W (Tc)	5.7 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF3205L	Infineon Technologies	MOSFET N-CH 55V 110A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3247pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,144	MOSFET (Metal Oxide)	55V	110A (Tc)	10V	4V @ 250µA	146nC @ 10V	3247pF @ 25V	±20V	-	200W (Tc)	8 mOhm @ 62A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IXTA220N055T7	IXYS	MOSFET N-CH 55V 220A TO-263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 430W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 (IXTA..7) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock6,816	MOSFET (Metal Oxide)	55V	220A (Tc)	10V	4V @ 250µA	158nC @ 10V	7200pF @ 25V	±20V	-	430W (Tc)	4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7 (IXTA..7)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
NTD18N06-001	ON Semiconductor	MOSFET N-CH 60V 18A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 55W (Tj) Rds On (Max) @ Id, Vgs: 60 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,592	MOSFET (Metal Oxide)	60V	18A (Ta)	10V	4V @ 250µA	30nC @ 10V	710pF @ 25V	±20V	-	2.1W (Ta), 55W (Tj)	60 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
PHT6N06T,135	NXP	MOSFET N-CH 55V 5.5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8.3W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock5,536	MOSFET (Metal Oxide)	55V	5.5A (Tc)	10V	4V @ 1mA	5.6nC @ 10V	175pF @ 25V	±20V	-	8.3W (Tc)	150 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IXFK21N100Q	IXYS	MOSFET N-CH 1000V 21A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock80,400	MOSFET (Metal Oxide)	1000V	21A (Tc)	10V	5.5V @ 4mA	170nC @ 10V	6900pF @ 25V	±20V	-	500W (Tc)	500 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFX30N50Q	IXYS	MOSFET N-CH 500V 30A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 416W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,456	MOSFET (Metal Oxide)	500V	30A (Tc)	10V	4.5V @ 4mA	150nC @ 10V	3950pF @ 25V	±20V	-	416W (Tc)	160 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
PMPB20ENZ	Nexperia USA Inc.	MOSFET N-CH 30V 7.2A 6DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN2020MD (2x2) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock4,160	MOSFET (Metal Oxide)	30V	7.2A (Ta)	4.5V, 10V	2V @ 250µA	10.8nC @ 10V	435pF @ 10V	±20V	-	1.7W (Ta), 12.5W (Tc)	19.5 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-DFN2020MD (2x2)	6-UDFN Exposed Pad
R6012ANX	Rohm Semiconductor	MOSFET N-CH 600V 12A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock4,880	MOSFET (Metal Oxide)	600V	12A (Ta)	10V	4.5V @ 1mA	35nC @ 10V	1300pF @ 25V	±30V	-	50W (Tc)	420 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
FDMS4435BZ	Fairchild/ON Semiconductor	MOSFET P-CH 30V 9A POWER56 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock36,012	MOSFET (Metal Oxide)	30V	9A (Ta), 18A (Tc)	4.5V, 10V	3V @ 250µA	47nC @ 10V	2050pF @ 15V	±25V	-	2.5W (Ta), 39W (Tc)	20 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
AON6794	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 39A DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock115,200	MOSFET (Metal Oxide)	30V	39A (Ta), 85A (Tc)	4.5V, 10V	1.9V @ 250µA	37.5nC @ 10V	2150pF @ 15V	±12V	-	6.2W (Ta), 42W (Tc)	2.8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
STP12NM50FP	STMicroelectronics	MOSFET N-CH 500V 12A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 6A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock558,624	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	5V @ 50µA	39nC @ 10V	1000pF @ 25V	±30V	-	35W (Tc)	350 mOhm @ 6A, 10V	-65°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IPP029N06NAKSA1	Infineon Technologies	MOSFET N-CH 60V 24A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 2.8V @ 75µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock13,662	MOSFET (Metal Oxide)	60V	24A (Ta), 100A (Tc)	6V, 10V	2.8V @ 75µA	56nC @ 10V	4100pF @ 30V	±20V	-	3W (Ta), 136W (Tc)	2.9 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IRFD9210PBF	Vishay Siliconix	MOSFET P-CH 200V 0.4A 4-DIP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 3 Ohm @ 240mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock71,640	MOSFET (Metal Oxide)	200V	400mA (Ta)	10V	4V @ 250µA	8.9nC @ 10V	170pF @ 25V	±20V	-	1W (Ta)	3 Ohm @ 240mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
FQP30N06	Fairchild/ON Semiconductor	MOSFET N-CH 60V 30A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock15,900	MOSFET (Metal Oxide)	60V	30A (Tc)	10V	4V @ 250µA	25nC @ 10V	945pF @ 25V	±25V	-	79W (Tc)	40 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STB12NM50ND	STMicroelectronics	MOSFET N-CH 500V 11A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock23,040	MOSFET (Metal Oxide)	500V	11A (Tc)	10V	5V @ 250µA	30nC @ 10V	850pF @ 50V	±25V	-	100W (Tc)	380 mOhm @ 5.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SQJQ144AE-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 575A PPAK 8 X 8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 575A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9020 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: PowerPAK® 8 x 8	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	575A (Tc)	10V	3.5V @ 250µA	145 nC @ 10 V	9020 pF @ 25 V	±20V	-	600W (Tc)	0.9mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8	PowerPAK® 8 x 8
NTGS3433T1	onsemi	MOSFET P-CH 12V 3.3A 6-TSOP FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFH78N60X3	IXYS	MOSFET ULTRA JCT 600V 78A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 78A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 39A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Stock3	MOSFET (Metal Oxide)	600 V	78A	10V	5V @ 4mA	70 nC @ 10 V	4700 pF @ 25 V	±20V	-	780W (Tc)	38mOhm @ 39A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
NVMFS6H858NLWFT1G	onsemi	MOSFET N-CH 80V 8.7A/30A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	8.7A (Ta), 30A (Tc)	4.5V, 10V	2V @ 30µA	12 nC @ 10 V	623 pF @ 40 V	±20V	-	3.5W (Ta), 42W (Tc)	19.5mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	5-DFNW (4.9x5.9) (8-SOFL-WF)	8-PowerTDFN, 5 Leads
GT023N10M	Goford Semiconductor	N100V,140A,RD<2.7M@10V,VTH2.7V~4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8050 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,400	MOSFET (Metal Oxide)	100 V	140A (Tc)	10V	4.3V @ 250µA	90 nC @ 10 V	8050 pF @ 50 V	±20V	-	500W (Tc)	2.7mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TPH3R70APL1-LQ	Toshiba Semiconductor and Storage	150V U-MOS IX-H SOP-ADVANCE(N) 3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5.75) Package / Case: 8-PowerTDFN	Package: -	Stock28,071	MOSFET (Metal Oxide)	100 V	90A (Tc)	4.5V, 10V	2.5V @ 1mA	67 nC @ 10 V	6300 pF @ 50 V	±20V	-	210W (Tc)	3.7mOhm @ 45A, 10V	175°C	Surface Mount	8-SOP Advance (5x5.75)	8-PowerTDFN
IRFF111	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	3.5A (Tc)	10V	4V @ 250µA	7.5 nC @ 10 V	135 pF @ 25 V	±20V	-	15W (Tc)	600mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-205AF (TO-39)	TO-205AF Metal Can
FDBL86063-F085AW	onsemi	MOSFET N-CH 100V 240A 8HPSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 240A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tj) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HPSOF Package / Case: 8-PowerSFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	240A (Tj)	10V	4V @ 250µA	95 nC @ 10 V	5120 pF @ 50 V	±20V	-	357W (Tj)	2.6mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-HPSOF	8-PowerSFN
RQ6E050AJTCR	Rohm Semiconductor	MOSFET N-CH 30V 5A TSMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock5,961	MOSFET (Metal Oxide)	30 V	5A (Ta)	2.5V, 4.5V	1.5V @ 1mA	4.7 nC @ 4.5 V	520 pF @ 15 V	±12V	-	950mW (Ta)	35mOhm @ 5A, 4.5V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
EPC2051	EPC	GANFET N-CH 100V 1.7A DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Stock30,690	GaNFET (Gallium Nitride)	100 V	1.7A (Ta)	5V	2.5V @ 1.5mA	2.1 nC @ 5 V	258 pF @ 50 V	+6V, -4V	-	-	25mOhm @ 3A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
TK28N65W5-S1F	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.6mA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 13.8A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Stock174	MOSFET (Metal Oxide)	650 V	27.6A (Ta)	10V	4.5V @ 1.6mA	90 nC @ 10 V	3000 pF @ 300 V	±30V	-	230W (Tc)	130mOhm @ 13.8A, 10V	150°C	Through Hole	TO-247	TO-247-3