|
|
Infineon Technologies |
MOSFET N-CH 55V 100A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5110pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock2,000 |
|
MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 5110pF @ 25V | ±20V | - | 300W (Tc) | 5 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
Infineon Technologies |
MOSFET P-CH 250V 0.43A SOT-223
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 370µA
- Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 262pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 430mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock5,712 |
|
MOSFET (Metal Oxide) | 250V | 430mA (Ta) | 4.5V, 10V | 2V @ 370µA | 15.1nC @ 10V | 262pF @ 25V | ±20V | - | 1.8W (Ta) | 4 Ohm @ 430mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
|
|
ON Semiconductor |
MOSFET P-CH 20V 6A SOT23-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-CPH
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock3,408 |
|
MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.8V, 4.5V | 1.4V @ 1mA | 10.5nC @ 4.5V | 860pF @ 10V | ±12V | - | 1.6W (Ta) | 39 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 12A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock396,168 |
|
MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 3V @ 250µA | 19nC @ 5V | 1293pF @ 15V | ±20V | - | 2.5W (Ta) | 11 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
STMicroelectronics |
MOSFET N-CH 500V 8A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 832pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock248,820 |
|
MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 4V @ 250µA | 39nC @ 10V | 832pF @ 25V | ±20V | - | 125W (Tc) | 850 mOhm @ 3.5A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
Infineon Technologies |
MOSFET N CH 55V 16A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 58 mOhm @ 9.6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,360 |
|
MOSFET (Metal Oxide) | 55V | 16A (Tc) | 4.5V, 10V | 3V @ 250µA | 9.9nC @ 5V | 380pF @ 25V | ±16V | - | 35W (Tc) | 58 mOhm @ 9.6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 75V 21.5A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10830pF @ 37.5V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,768 |
|
MOSFET (Metal Oxide) | 75V | 21.5A (Ta), 140A (Tc) | 6V, 10V | 3.3V @ 250µA | 206nC @ 10V | 10830pF @ 37.5V | ±20V | - | 2.1W (Ta), 500W (Tc) | 2.4 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
ON Semiconductor |
MOSFET N-CH 60V 20A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2164pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
- Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock4,784 |
|
MOSFET (Metal Oxide) | 60V | 20A (Ta), 93A (Tc) | 4.5V, 10V | 2V @ 250µA | 33.7nC @ 10V | 2164pF @ 25V | ±20V | - | 3.7W (Ta), 79W (Tc) | 4.7 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
|
Rohm Semiconductor |
MOSFET N-CH 30V 11A SOP8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 11A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,744 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | - | 2.5V @ 1mA | 17nC @ 5V | 1300pF @ 10V | - | - | 2W (Ta) | 10.7 mOhm @ 11A, 10V | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
|
Vishay Siliconix |
MOSFET N-CH 600V POWERPAK SO-8L
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 754pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Rds On (Max) @ Id, Vgs: 520 mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock4,512 |
|
MOSFET (Metal Oxide) | 600V | 8A (Tc) | 10V | 4V @ 250µA | 44nC @ 10V | 754pF @ 100V | ±30V | - | 89W (Tc) | 520 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
Microsemi Corporation |
MOSFET N-CH 1000V 20A SP1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Rds On (Max) @ Id, Vgs: 720 mOhm @ 10A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP1
- Package / Case: SP1
|
Package: SP1 |
Stock5,776 |
|
MOSFET (Metal Oxide) | 1000V | 20A | 10V | 4V @ 2.5mA | - | 6000pF @ 25V | ±30V | - | 520W (Tc) | 720 mOhm @ 10A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
Vishay Siliconix |
MOSFET N-CH 40V 90A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 131nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5286pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,744 |
|
MOSFET (Metal Oxide) | 40V | 90A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 131nC @ 10V | 5286pF @ 20V | ±20V | - | 3.1W (Ta), 125W (Tc) | 3.3 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
Nexperia USA Inc. |
MOSFET N-CH 60V 120A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 137nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9997pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 338W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock27,918 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 1mA | 137nC @ 10V | 9997pF @ 30V | ±20V | - | 338W (Tc) | 2.2 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
|
|
Infineon Technologies |
MOSFET P-CH 20V 6.7A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 3.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock348,420 |
|
MOSFET (Metal Oxide) | 20V | 6.7A (Ta) | 2.7V, 4.5V | 700mV @ 250µA | 50nC @ 4.5V | 1500pF @ 15V | ±12V | - | 2.5W (Ta) | 40 mOhm @ 3.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 11A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
- Rds On (Max) @ Id, Vgs: 115 mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock59,358 |
|
MOSFET (Metal Oxide) | 60V | 11A (Tc) | 5V, 10V | 2.5V @ 250µA | 6.4nC @ 5V | 350pF @ 25V | ±20V | - | 2.5W (Ta), 28W (Tc) | 115 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
Infineon Technologies |
MOSFET N-CH 60V 50A TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 23µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock331,452 |
|
MOSFET (Metal Oxide) | 60V | 12A (Ta), 50A (Tc) | 4.5V, 10V | 2.2V @ 23µA | 45nC @ 10V | 3500pF @ 30V | ±20V | - | 2.5W (Ta), 50W (Tc) | 10 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
|
|
Infineon Technologies |
MOSFET N-CH 40V 81A TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 81A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 27µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
- Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock194,712 |
|
MOSFET (Metal Oxide) | 40V | 17A (Ta), 81A (Tc) | 10V | 4V @ 27µA | 34nC @ 10V | 2800pF @ 20V | ±20V | - | 2.5W (Ta), 57W (Tc) | 5.4 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 40V 80A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock14,016 |
|
MOSFET (Metal Oxide) | 40V | 28A (Ta), 120A (Tc) | 10V | 4V @ 250µA | 280nC @ 10V | 15000pF @ 25V | ±20V | - | 300W (Tc) | 2.5 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
Fairchild/ON Semiconductor |
MOSFET P-CH 200V 5.7A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
- Rds On (Max) @ Id, Vgs: 690 mOhm @ 2.85A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock753,396 |
|
MOSFET (Metal Oxide) | 200V | 5.7A (Tc) | 10V | 5V @ 250µA | 25nC @ 10V | 770pF @ 25V | ±30V | - | 2.5W (Ta), 55W (Tc) | 690 mOhm @ 2.85A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Diodes Incorporated |
MOSFET P-CH 60V 3A SOT223
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock2,016,612 |
|
MOSFET (Metal Oxide) | 60V | 3A (Ta) | 4.5V, 10V | 1V @ 250µA | 17.7nC @ 10V | 637pF @ 30V | ±20V | - | 2W (Ta) | 125 mOhm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
Micro Commercial Co |
P-CHANNEL MOSFET,DFN3333
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 25A
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tj)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN3333
- Package / Case: 8-VDFN Exposed Pad
|
Package: - |
Stock25,797 |
|
MOSFET (Metal Oxide) | 60 V | 25A | 4.5V, 10V | 2.7V @ 250µA | 18.7 nC @ 10 V | 1100 pF @ 30 V | ±20V | - | 60W (Tj) | 50mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN3333 | 8-VDFN Exposed Pad |
|
|
Vishay Siliconix |
MOSFET P-CHANNEL 40V 6.9A 6TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 20 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 5W (Tc)
- Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: - |
Stock19,722 |
|
MOSFET (Metal Oxide) | 40 V | 6.9A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 12.5 nC @ 4.5 V | 975 pF @ 20 V | ±12V | - | 5W (Tc) | 61mOhm @ 2.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
|
|
Vishay Siliconix |
MOSFET N-CH 100V 11.8/40.5A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 40.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
- Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 11.8A (Ta), 40.5A (Tc) | 7.5V, 10V | 3.4V @ 250µA | 38 nC @ 10 V | 1850 pF @ 50 V | ±20V | - | 4.8W (Ta), 57W (Tc) | 14.4mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Rds On (Max) @ Id, Vgs: 5.3mOhm @ 28A, 10V
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
|
Package: - |
Stock180 |
|
MOSFET (Metal Oxide) | 60 V | 56A (Tc) | 4.5V, 10V | 2.5V @ 300µA | 36 nC @ 10 V | 2380 pF @ 30 V | ±20V | - | 36W (Tc) | 5.3mOhm @ 28A, 10V | 175°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 1.1A UFM
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Leads
|
Package: - |
Stock2,244 |
|
MOSFET (Metal Oxide) | 30 V | 1.1A (Ta) | 4V, 10V | 1.8V @ 100µA | - | 86 pF @ 15 V | ±20V | - | 800mW (Ta) | 390mOhm @ 500mA, 10V | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
|
|
Panjit International Inc. |
800V N-CHANNEL MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 146W (Tc)
- Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | 5A (Ta) | 10V | 4V @ 250µA | 17 nC @ 10 V | 660 pF @ 25 V | ±30V | - | 146W (Tc) | 2.7Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
MOSLEADER |
Single N 30V 5.1A SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |