Page 1499 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AOTF10T60_001
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V TO-220F

Package: -

Stock7,248
TK16A60W5,S4VX
Toshiba Semiconductor and Storage

MOSFET N CH 600V 15.8A TO-220SIS

Package: TO-220-3 Full Pack, Isolated Tab

Stock5,216
SI8404DB-T1-E1
Vishay Siliconix

MOSFET N-CH 8V 12.2A 2X2 4-MFP

Package: 4-XFBGA, CSPBGA

Stock216,000
IRFD010
Vishay Siliconix

MOSFET N-CH 50V 1.7A 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock100,680
IPC028N03L3X1SA1
Infineon Technologies

MOSFET N-CH 30V SAWN BARE DIE

Package: Die

Stock4,128
APT58M50J
Microsemi Corporation

MOSFET N-CH 500V 58A SOT-227

Package: SOT-227-4, miniBLOC

Stock7,728
TPS1100DG4
Texas Instruments

MOSFET P-CH 15V 1.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,280
STI11NM80
STMicroelectronics

MOSFET N-CH 800V 11A I2PAK-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,824
NVF6P02T3G
ON Semiconductor

MOSFET P-CH 20V 10A SOT-223

Package: TO-261-4, TO-261AA

Stock2,100
IPA50R950CEXKSA2
Infineon Technologies

MOSFET N-CH 500V 3.7A TO-220FP

Package: TO-220-3 Full Pack

Stock7,056
FQPF27N25
Fairchild/ON Semiconductor

MOSFET N-CH 250V 14A TO-220F

Package: TO-220-3 Full Pack

Stock5,440
RRQ030P03TR
Rohm Semiconductor

MOSFET P-CH 30V 3A TSMT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock743,604
STF45N10F7
STMicroelectronics

MOSFET N-CH 100V 30A TO-220FP

Package: TO-220-3 Full Pack

Stock18,672
BUK9609-40B,118
Nexperia USA Inc.

MOSFET N-CH 40V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock27,990
BSC026N02KS G
Infineon Technologies

MOSFET N-CH 20V 100A TDSON-8

Package: 8-PowerTDFN

Stock172,008
R6004ENXC7G
Rohm Semiconductor

600V 4A TO-220FM, LOW-NOISE POWE

Package: -

Stock2,460
PJW1NA60_R2_00001
Panjit International Inc.

600V N-CHANNEL MOSFET

Package: -

Request a Quote
IPB65R075CFD7AATMA1
Infineon Technologies

AUTOMOTIVE_COOLMOS PG-TO263-3

Package: -

Stock2,730
STH12N120K5-2AG
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 1200

Package: -

Request a Quote
AONS32302
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 56A/220A 8DFN

Package: -

Stock29,496

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AOTF10T60_001	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V TO-220F FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,248	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK16A60W5,S4VX	Toshiba Semiconductor and Storage	MOSFET N CH 600V 15.8A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock5,216	MOSFET (Metal Oxide)	600V	15.8A (Ta)	10V	3.7V @ 1.5mA	43nC @ 10V	1350pF @ 300V	±30V	Super Junction	40W (Tc)	190 mOhm @ 7.9A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack, Isolated Tab
SI8404DB-T1-E1	Vishay Siliconix	MOSFET N-CH 8V 12.2A 2X2 4-MFP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 4V Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 2.78W (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 31 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	Package: 4-XFBGA, CSPBGA	Stock216,000	MOSFET (Metal Oxide)	8V	12.2A (Tc)	1.8V, 4.5V	1V @ 250µA	33nC @ 5V	1950pF @ 4V	±5V	-	2.78W (Ta), 6.25W (Tc)	31 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-Microfoot	4-XFBGA, CSPBGA
IRFD010	Vishay Siliconix	MOSFET N-CH 50V 1.7A 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 860mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock100,680	MOSFET (Metal Oxide)	50V	1.7A (Tc)	10V	4V @ 250µA	13nC @ 10V	250pF @ 25V	±20V	-	1W (Tc)	200 mOhm @ 860mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IPC028N03L3X1SA1	Infineon Technologies	MOSFET N-CH 30V SAWN BARE DIE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Sawn on foil Package / Case: Die	Package: Die	Stock4,128	MOSFET (Metal Oxide)	30V	2A (Tj)	10V	2.2V @ 250µA	-	-	-	-	-	50 mOhm @ 2A, 10V	-	Surface Mount	Sawn on foil	Die
APT58M50J	Microsemi Corporation	MOSFET N-CH 500V 58A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 58A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 42A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,728	MOSFET (Metal Oxide)	500V	58A	10V	5V @ 2.5mA	340nC @ 10V	13500pF @ 25V	±30V	-	540W (Tc)	65 mOhm @ 42A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
TPS1100DG4	Texas Instruments	MOSFET P-CH 15V 1.6A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): +2V, -15V FET Feature: - Power Dissipation (Max): 791mW (Ta) Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,280	MOSFET (Metal Oxide)	15V	1.6A (Ta)	2.7V, 10V	1.5V @ 250µA	5.45nC @ 10V	-	+2V, -15V	-	791mW (Ta)	180 mOhm @ 1.5A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
STI11NM80	STMicroelectronics	MOSFET N-CH 800V 11A I2PAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,824	MOSFET (Metal Oxide)	800V	11A (Tc)	10V	5V @ 250µA	43.6nC @ 10V	1630pF @ 25V	±30V	-	150W (Tc)	400 mOhm @ 5.5A, 10V	-65°C ~ 150°C (TJ)	Through Hole	I2PAK (TO-262)	TO-262-3 Long Leads, I2Pak, TO-262AA
NVF6P02T3G	ON Semiconductor	MOSFET P-CH 20V 10A SOT-223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 16V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 8.3W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 (TO-261) Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock2,100	MOSFET (Metal Oxide)	20V	10A (Ta)	2.5V, 4.5V	1V @ 250µA	20nC @ 4.5V	1200pF @ 16V	±8V	-	8.3W (Ta)	50 mOhm @ 6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA
IPA50R950CEXKSA2	Infineon Technologies	MOSFET N-CH 500V 3.7A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25.7W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.2A, 13V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,056	MOSFET (Metal Oxide)	500V	3.7A (Tc)	13V	3.5V @ 100µA	10.5nC @ 10V	231pF @ 100V	±20V	-	25.7W (Tc)	950 mOhm @ 1.2A, 13V	-40°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
FQPF27N25	Fairchild/ON Semiconductor	MOSFET N-CH 250V 14A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,440	MOSFET (Metal Oxide)	250V	14A (Tc)	10V	5V @ 250µA	65nC @ 10V	2450pF @ 25V	±30V	-	55W (Tc)	110 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
RRQ030P03TR	Rohm Semiconductor	MOSFET P-CH 30V 3A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock743,604	MOSFET (Metal Oxide)	30V	3A (Ta)	4V, 10V	2.5V @ 1mA	12nC @ 10V	480pF @ 10V	±20V	-	600mW (Ta)	75 mOhm @ 3A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
STF45N10F7	STMicroelectronics	MOSFET N-CH 100V 30A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 50V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock18,672	MOSFET (Metal Oxide)	100V	30A (Tc)	10V	4.5V @ 250µA	25nC @ 10V	1640pF @ 50V	20V	-	25W (Tc)	18 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
BUK9609-40B,118	Nexperia USA Inc.	MOSFET N-CH 40V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock27,990	MOSFET (Metal Oxide)	40V	75A (Tc)	5V, 10V	2V @ 1mA	32nC @ 5V	3600pF @ 25V	±15V	-	157W (Tc)	7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSC026N02KS G	Infineon Technologies	MOSFET N-CH 20V 100A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 52.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 50A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock172,008	MOSFET (Metal Oxide)	20V	25A (Ta), 100A (Tc)	2.5V, 4.5V	1.2V @ 200µA	52.7nC @ 4.5V	7800pF @ 10V	±12V	-	2.8W (Ta), 78W (Tc)	2.6 mOhm @ 50A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
R6004ENXC7G	Rohm Semiconductor	600V 4A TO-220FM, LOW-NOISE POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: -	Stock2,460	MOSFET (Metal Oxide)	600 V	4A (Tc)	10V	4V @ 1mA	15 nC @ 10 V	250 pF @ 25 V	±20V	-	40W (Tc)	980mOhm @ 1.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
PJW1NA60_R2_00001	Panjit International Inc.	600V N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.3W (Tc) Rds On (Max) @ Id, Vgs: 14Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	300mA (Ta)	10V	4V @ 250µA	3.3 nC @ 10 V	95 pF @ 25 V	±30V	-	3.3W (Tc)	14Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IPB65R075CFD7AATMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS PG-TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 820µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 171W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,730	MOSFET (Metal Oxide)	650 V	32A (Tc)	10V	4.5V @ 820µA	68 nC @ 10 V	3288 pF @ 400 V	±20V	-	171W (Tc)	75mOhm @ 16.4A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STH12N120K5-2AG	STMicroelectronics	AUTOMOTIVE-GRADE N-CHANNEL 1200 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	12A (Tc)	10V	5V @ 100µA	44.2 nC @ 10 V	1370 pF @ 100 V	±30V	-	250W (Tc)	690mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	H2PAK-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AONS32302	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 56A/220A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6060 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 119W (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: -	Stock29,496	MOSFET (Metal Oxide)	30 V	56A (Ta), 220A (Tc)	4.5V, 10V	2.3V @ 250µA	150 nC @ 10 V	6060 pF @ 15 V	±20V	-	119W (Tc)	1.35mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
XP262N7002TR-G	Torex Semiconductor Ltd	MOSFET N-CH 60V 300MA SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 100mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock5,610	MOSFET (Metal Oxide)	60 V	300mA (Ta)	4.5V, 10V	2.1V @ 250µA	0.72 nC @ 10 V	30 pF @ 20 V	±20V	-	400mW (Ta)	1.6Ohm @ 100mA, 10V	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
TP5335K1-G-VAO	Microchip Technology	MOSFET P-CH 350V 85MA SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350 V Current - Continuous Drain (Id) @ 25°C: 85mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	350 V	85mA (Tj)	4.5V, 10V	2.4V @ 1mA	-	110 pF @ 25 V	±20V	-	360mW (Ta)	30Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
NTB85N03T4	onsemi	MOSFET N-CH 28V 85A D2PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FCPF380N60-F154	onsemi	MOSFET N-CH 600V 10.2A TO220F-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 10.2A (Tj) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	10.2A (Tj)	-	3.5V @ 250µA	40 nC @ 10 V	1665 pF @ 25 V	±20V	-	31W (Tc)	380mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
2SK1580-0-T1-A	Renesas Electronics Corporation	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AONS66521	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 215W (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: -	Stock8,775	MOSFET (Metal Oxide)	150 V	16A (Ta), 100A (Tc)	8V, 10V	4.5V @ 250µA	45 nC @ 10 V	2600 pF @ 75 V	±20V	-	6.2W (Ta), 215W (Tc)	9.8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
AOSP66925	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	11A (Ta)	4.5V, 10V	2.6V @ 250µA	33 nC @ 10 V	1590 pF @ 50 V	±20V	-	3.1W (Ta)	12.5mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
UF3C120150B7S	Qorvo	1200V/150MOHM, SIC, FAST CASCODE FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 5.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 25.7 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock8,982	SiCFET (Cascode SiCJFET)	1200 V	17A (Tc)	12V	5.5V @ 10mA	25.7 nC @ 12 V	738 pF @ 100 V	±25V	-	136W (Tc)	180mOhm @ 5A, 12V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA