Page 1500 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFU3418PBF
Infineon Technologies

MOSFET N-CH 80V 70A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,080
IPB05N03LA
Infineon Technologies

MOSFET N-CH 25V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock35,556
2SK3748
ON Semiconductor

MOSFET N-CH 1500V 4A TO-3PML

Package: TO-3P-3 Full Pack

Stock106,800
CSD25401Q3
Texas Instruments

MOSFET P-CH 20V 60A 8-SON

Package: 8-PowerTDFN

Stock1,239,864
FQPF17P06
Fairchild/ON Semiconductor

MOSFET P-CH 60V 12A TO-220F

Package: TO-220-3 Full Pack

Stock224,208
IRFZ44STRR
Vishay Siliconix

MOSFET N-CH 60V 50A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,552
2SK3047
Panasonic Electronic Components

MOSFET N-CH 800V 2A TO-220D

Package: TO-220-3 Full Pack

Stock3,712
IPA60R180C7XKSA1
Infineon Technologies

MOSFET N-CH 600V TO220-3

Package: TO-220-3 Full Pack

Stock4,832
RJK0602DPN-E0#T2
Renesas Electronics America

MOSFET N-CH 60V 100A TO220

Package: TO-220-3

Stock2,384
TK8A45DA(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 450V 7.5A TO-220SIS

Package: TO-220-3 Full Pack

Stock3,568
AOT254L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 150V 4.2A TO220

Package: TO-220-3

Stock61,392
NTMFS4925NT3G
ON Semiconductor

MOSFET N-CH 30V 48A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock58,200
NTMFS4C09NT1G
ON Semiconductor

MOSFET N-CH 30V 9A SO8FL

Package: 8-PowerTDFN

Stock48,360
DMN3016LFDE-13
Diodes Incorporated

MOSFET N-CH 30V U-DFN2020-6

Package: 6-UDFN Exposed Pad

Stock6,320
DMN601WKQ-13
Diodes Incorporated

MOSFET NCH 60V SOT323

Package: SC-70, SOT-323

Stock6,144
SIR470DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 60A PPAK SO-8

Package: PowerPAK? SO-8

Stock77,736
SIHF18N50D-E3
Vishay Siliconix

MOSFET N-CH 500V 18A TO-220FP

Package: TO-220-3 Full Pack

Stock17,520
SPP04N80C3
Infineon Technologies

MOSFET N-CH 800V 4A TO-220AB

Package: TO-220-3

Stock534,024
SI3493BDV-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 8A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock6,836,232
STW70N60DM2
STMicroelectronics

MOSFET N-CH 600V 66A

Package: TO-247-3

Stock3,680

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFU3418PBF	Infineon Technologies	MOSFET N-CH 80V 70A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3510pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,080	MOSFET (Metal Oxide)	80V	70A (Tc)	10V	5.5V @ 250µA	94nC @ 10V	3510pF @ 25V	±20V	-	3.8W (Ta), 140W (Tc)	14 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IPB05N03LA	Infineon Technologies	MOSFET N-CH 25V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock35,556	MOSFET (Metal Oxide)	25V	80A (Tc)	4.5V, 10V	2V @ 50µA	25nC @ 5V	3110pF @ 15V	±20V	-	94W (Tc)	4.6 mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
2SK3748	ON Semiconductor	MOSFET N-CH 1500V 4A TO-3PML FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 7 Ohm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PML Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock106,800	MOSFET (Metal Oxide)	1500V	4A (Ta)	10V	-	80nC @ 10V	790pF @ 30V	±20V	-	3W (Ta), 65W (Tc)	7 Ohm @ 2A, 10V	150°C (TJ)	Through Hole	TO-3PML	TO-3P-3 Full Pack
CSD25401Q3	Texas Instruments	MOSFET P-CH 20V 60A 8-SON FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.8W (Ta) Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 10A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (3.3x3.3) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock1,239,864	MOSFET (Metal Oxide)	20V	14A (Ta), 60A (Tc)	2.5V, 4.5V	1.2V @ 250µA	12.3nC @ 4.5V	1400pF @ 10V	±12V	-	2.8W (Ta)	11.7 mOhm @ 10A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (3.3x3.3)	8-PowerTDFN
FQPF17P06	Fairchild/ON Semiconductor	MOSFET P-CH 60V 12A TO-220F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock224,208	MOSFET (Metal Oxide)	60V	12A (Tc)	10V	4V @ 250µA	27nC @ 10V	900pF @ 25V	±25V	-	39W (Tc)	120 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IRFZ44STRR	Vishay Siliconix	MOSFET N-CH 60V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,552	MOSFET (Metal Oxide)	60V	50A (Tc)	10V	4V @ 250µA	67nC @ 10V	1900pF @ 25V	±20V	-	3.7W (Ta), 150W (Tc)	28 mOhm @ 31A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
2SK3047	Panasonic Electronic Components	MOSFET N-CH 800V 2A TO-220D FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 20V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220D-A1 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,712	MOSFET (Metal Oxide)	800V	2A (Tc)	10V	5V @ 1mA	-	350pF @ 20V	±30V	-	2W (Ta), 30W (Tc)	7 Ohm @ 1A, 10V	150°C (TJ)	Through Hole	TO-220D-A1	TO-220-3 Full Pack
IPA60R180C7XKSA1	Infineon Technologies	MOSFET N-CH 600V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,832	MOSFET (Metal Oxide)	600V	9A (Tc)	10V	4V @ 260µA	24nC @ 10V	1080pF @ 400V	±20V	-	29W (Tc)	180 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
RJK0602DPN-E0#T2	Renesas Electronics America	MOSFET N-CH 60V 100A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 110A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,384	MOSFET (Metal Oxide)	60V	110A (Ta)	10V	-	90nC @ 10V	6450pF @ 10V	±20V	-	150W (Tc)	3.9 mOhm @ 50A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
TK8A45DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 7.5A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,568	MOSFET (Metal Oxide)	450V	7.5A (Tc)	-	-	-	-	-	-	-	-	-	Through Hole	TO-220SIS	TO-220-3 Full Pack
AOT254L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 150V 4.2A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock61,392	MOSFET (Metal Oxide)	150V	4.2A (Ta), 32A (Tc)	4.5V, 10V	2.7V @ 250µA	40nC @ 10V	2150pF @ 75V	±20V	-	2.1W (Ta), 125W (Tc)	46 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
NTMFS4925NT3G	ON Semiconductor	MOSFET N-CH 30V 48A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1264pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 920mW (Ta), 23.2W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock58,200	MOSFET (Metal Oxide)	30V	9.7A (Ta), 48A (Tc)	4.5V, 10V	2.2V @ 250µA	21.5nC @ 10V	1264pF @ 15V	±20V	-	920mW (Ta), 23.2W (Tc)	5.6 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4C09NT1G	ON Semiconductor	MOSFET N-CH 30V 9A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 760mW (Ta), 25.5W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock48,360	MOSFET (Metal Oxide)	30V	9A (Ta)	4.5V, 10V	2.1V @ 250µA	10.9nC @ 4.5V	1252pF @ 15V	±20V	-	760mW (Ta), 25.5W (Tc)	5.8 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
DMN3016LFDE-13	Diodes Incorporated	MOSFET N-CH 30V U-DFN2020-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 730mW (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock6,320	MOSFET (Metal Oxide)	30V	10A (Ta)	4.5V, 10V	2V @ 250µA	25.1nC @ 10V	1415pF @ 15V	±20V	-	730mW (Ta)	12 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type E)	6-UDFN Exposed Pad
DMN601WKQ-13	Diodes Incorporated	MOSFET NCH 60V SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock6,144	MOSFET (Metal Oxide)	60V	-	4.5V, 10V	2.5V @ 1mA	-	50pF @ 25V	±20V	-	200mW (Ta)	2 Ohm @ 500mA, 10V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
SIR470DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock77,736	MOSFET (Metal Oxide)	40V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	155nC @ 10V	5660pF @ 20V	±20V	-	6.25W (Ta), 104W (Tc)	2.3 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SIHF18N50D-E3	Vishay Siliconix	MOSFET N-CH 500V 18A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock17,520	MOSFET (Metal Oxide)	500V	18A (Tc)	10V	5V @ 250µA	76nC @ 10V	1500pF @ 100V	±30V	-	39W (Tc)	280 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SPP04N80C3	Infineon Technologies	MOSFET N-CH 800V 4A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock534,024	MOSFET (Metal Oxide)	800V	4A (Tc)	10V	3.9V @ 240µA	31nC @ 10V	570pF @ 100V	±20V	-	63W (Tc)	1.3 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
SI3493BDV-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 8A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1805pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc) Rds On (Max) @ Id, Vgs: 27.5 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock6,836,232	MOSFET (Metal Oxide)	20V	8A (Tc)	1.8V, 4.5V	900mV @ 250µA	43.5nC @ 5V	1805pF @ 10V	±8V	-	2.08W (Ta), 2.97W (Tc)	27.5 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
STW70N60DM2	STMicroelectronics	MOSFET N-CH 600V 66A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5508pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock3,680	MOSFET (Metal Oxide)	600V	66A (Tc)	10V	5V @ 250µA	121nC @ 10V	5508pF @ 100V	±25V	-	446W (Tc)	42 mOhm @ 33A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
5HN02C-TB-E	onsemi	N-CHANNEL SMALL SIGNAL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RFD16N02L	Harris Corporation	16A, 20V, 0.022 OHM, N-CHANNEL L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	16A (Tc)	5V	2V @ 250µA	60 nC @ 10 V	1300 pF @ 20 V	±10V	-	90W (Tc)	22mOhm @ 16A, 5V	-55°C ~ 175°C (TJ)	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
PMN100EPAX	Nexperia USA Inc.	MOSFET P-CH 60V 2.5A 6TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 616 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 660mW (Ta), 7.5W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: -	Stock79,080	MOSFET (Metal Oxide)	60 V	2.5A (Ta)	4.5V, 10V	3.2V @ 250µA	17 nC @ 10 V	616 pF @ 30 V	±20V	-	660mW (Ta), 7.5W (Tc)	130mOhm @ 2.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
PXN4R7-30QLJ	Nexperia USA Inc.	PXN4R7-30QL/SOT8002/MLPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MLPAK33 Package / Case: 8-PowerVDFN	Package: -	Stock55,827	MOSFET (Metal Oxide)	30 V	15A (Ta), 74A (Tc)	4.5V, 10V	2.5V @ 250µA	46.2 nC @ 10 V	2100 pF @ 15 V	±20V	-	1.8W (Ta), 42W (Tc)	4.7mOhm @ 15.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	MLPAK33	8-PowerVDFN
2SK1420-SSO-UR10	onsemi	NCH 10V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2N7002PW	Diotec Semiconductor	MOSFET, SOT-323, 60V, 0.315A, 15 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 315mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 260mW (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	315mA (Ta)	5V, 10V	2.4V @ 250µA	0.6 nC @ 10 V	30 pF @ 10 V	±20V	-	260mW (Ta)	1.6Ohm @ 500mA, 10V	150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
RW4C045BCTCL1	Rohm Semiconductor	PCH -20V -4.5A POWER MOSFET: RW4 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1616-7T Package / Case: 6-PowerUFDFN	Package: -	Stock62,220	MOSFET (Metal Oxide)	20 V	4.5A (Ta)	1.8V, 4.5V	1.5V @ 1mA	6.5 nC @ 4.5 V	460 pF @ 10 V	±8V	-	1.5W (Ta)	56mOhm @ 4.5A, 4.5V	150°C (TJ)	Surface Mount	DFN1616-7T	6-PowerUFDFN
SIHB24N65ET5-GE3	Vishay Siliconix	MOSFET N-CH 650V 24A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	4V @ 250µA	122 nC @ 10 V	2740 pF @ 100 V	±30V	-	250W (Tc)	145mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB