Page 23 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPI06N03LA
Infineon Technologies

MOSFET N-CH 25V 50A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,064
GP1M007A090H
Global Power Technologies Group

MOSFET N-CH 900V 7A TO220

Package: TO-220-3

Stock4,720
SUM110P08-11-E3
Vishay Siliconix

MOSFET P-CH 80V 110A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,688
NTHD4N02FT1G
ON Semiconductor

MOSFET N-CH 20V 2.9A CHIPFET

Package: 8-SMD, Flat Lead

Stock657,840
IXTQ150N15P
IXYS

MOSFET N-CH 150V 150A TO-3P

Package: TO-3P-3, SC-65-3

Stock5,472
SIHP24N65EF-GE3
Vishay Siliconix

MOSFET N-CH 650V 24A TO220AB

Package: TO-220-3

Stock2,160
2SK4066-DL-1E
ON Semiconductor

MOSFET N-CH 60V 100A

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,192
CPH3457-TL-W
ON Semiconductor

MOSFET N-CH 30V 3A CPH3

Package: TO-236-3, SC-59, SOT-23-3

Stock4,368
TSM1NB60CP ROG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,784
IPT059N15N3ATMA1
Infineon Technologies

MOSFET N-CH 150V 155A 8HSOF

Package: 8-PowerSFN

Stock3,744
NTMFS4841NHT1G
ON Semiconductor

MOSFET N-CH 30V 8.6A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock105,696
SI7116DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 10.5A 1212-8

Package: PowerPAK? 1212-8

Stock140,520
AOD242
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 14.5A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock226,560
STD130N4F6AG
STMicroelectronics

MOSFET N-CH 40V 80A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,072
SI2301BDS-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 2.2A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock1,046,772
SIHP25N50E-GE3
Vishay Siliconix

MOSFET N-CH 500V 26A TO-220AB

Package: TO-220-3

Stock14,544
STFW69N65M5
STMicroelectronics

MOSFET N-CH 650V 58A TO-3PF

Package: TO-3P-3 Full Pack

Stock16,992
AOD2N60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 2A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock144,612
SQJ444EP-T1_BE3
Vishay Siliconix

N-CHANNEL 40-V (D-S) 175C MOSFET

Package: -

Stock18,000
SQ3495EV-T1_GE3
Vishay Siliconix

MOSFET P-CH 30V 8A 6TSOP

Package: -

Stock46,848

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPI06N03LA	Infineon Technologies	MOSFET N-CH 25V 50A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,064	MOSFET (Metal Oxide)	25V	50A (Tc)	4.5V, 10V	2V @ 40µA	22nC @ 5V	2653pF @ 15V	±20V	-	83W (Tc)	6.2 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
GP1M007A090H	Global Power Technologies Group	MOSFET N-CH 900V 7A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock4,720	MOSFET (Metal Oxide)	900V	7A (Tc)	10V	4V @ 250µA	49nC @ 10V	1969pF @ 25V	±30V	-	250W (Tc)	1.9 Ohm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
SUM110P08-11-E3	Vishay Siliconix	MOSFET P-CH 80V 110A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 13.6W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,688	MOSFET (Metal Oxide)	80V	110A (Tc)	10V	4V @ 250µA	280nC @ 10V	11500pF @ 40V	±20V	-	13.6W (Ta), 375W (Tc)	11.1 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTHD4N02FT1G	ON Semiconductor	MOSFET N-CH 20V 2.9A CHIPFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 910mW (Tj) Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock657,840	MOSFET (Metal Oxide)	20V	2.9A (Tj)	2.5V, 4.5V	1.2V @ 250µA	4nC @ 4.5V	300pF @ 10V	±12V	Schottky Diode (Isolated)	910mW (Tj)	80 mOhm @ 2.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET?	8-SMD, Flat Lead
IXTQ150N15P	IXYS	MOSFET N-CH 150V 150A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 714W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,472	MOSFET (Metal Oxide)	150V	150A (Tc)	10V	5V @ 250µA	190nC @ 10V	5800pF @ 25V	±20V	-	714W (Tc)	13 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
SIHP24N65EF-GE3	Vishay Siliconix	MOSFET N-CH 650V 24A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2656pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 156 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,160	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	4V @ 250µA	122nC @ 10V	2656pF @ 100V	±20V	-	250W (Tc)	156 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
2SK4066-DL-1E	ON Semiconductor	MOSFET N-CH 60V 100A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12500pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,192	MOSFET (Metal Oxide)	60V	100A (Ta)	4V, 10V	-	220nC @ 10V	12500pF @ 20V	±20V	-	1.65W (Ta), 90W (Tc)	4.7 mOhm @ 50A, 10V	150°C (TJ)	Surface Mount	TO-263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
CPH3457-TL-W	ON Semiconductor	MOSFET N-CH 30V 3A CPH3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CPH Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,368	MOSFET (Metal Oxide)	30V	3A (Ta)	1.8V, 4.5V	1.3V @ 1mA	3.5nC @ 4.5V	265pF @ 10V	±12V	-	1W (Ta)	95 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	3-CPH	TO-236-3, SC-59, SOT-23-3
TSM1NB60CP ROG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, PLANA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,784	MOSFET (Metal Oxide)	600V	1A (Tc)	10V	4.5V @ 250µA	6.1nC @ 10V	138pF @ 25V	±30V	-	39W (Tc)	10 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IPT059N15N3ATMA1	Infineon Technologies	MOSFET N-CH 150V 155A 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 155A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 150A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock3,744	MOSFET (Metal Oxide)	150V	155A (Tc)	8V, 10V	4V @ 270µA	92nC @ 10V	7200pF @ 75V	±20V	-	375W (Tc)	5.9 mOhm @ 150A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
NTMFS4841NHT1G	ON Semiconductor	MOSFET N-CH 30V 8.6A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 2113pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 870mW (Ta), 41.7W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock105,696	MOSFET (Metal Oxide)	30V	8.6A (Ta), 59A (Tc)	4.5V, 10V	2.5V @ 250µA	33nC @ 11.5V	2113pF @ 12V	±20V	-	870mW (Ta), 41.7W (Tc)	7 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
SI7116DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 10.5A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 16.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock140,520	MOSFET (Metal Oxide)	40V	10.5A (Ta)	4.5V, 10V	2.5V @ 250µA	23nC @ 4.5V	-	±20V	-	1.5W (Ta)	7.8 mOhm @ 16.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
AOD242	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 40V 14.5A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 53.5W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock226,560	MOSFET (Metal Oxide)	40V	14.5A (Ta), 54A (Tc)	4.5V, 10V	2.3V @ 250µA	28nC @ 10V	1350pF @ 20V	±20V	-	2.5W (Ta), 53.5W (Tc)	5.8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
STD130N4F6AG	STMicroelectronics	MOSFET N-CH 40V 80A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 143W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,072	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	70nC @ 10V	4260pF @ 25V	±20V	-	143W (Tc)	3.6 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
SI2301BDS-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 2.2A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,046,772	MOSFET (Metal Oxide)	20V	2.2A (Ta)	2.5V, 4.5V	950mV @ 250µA	10nC @ 4.5V	375pF @ 6V	±8V	-	700mW (Ta)	100 mOhm @ 2.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SIHP25N50E-GE3	Vishay Siliconix	MOSFET N-CH 500V 26A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock14,544	MOSFET (Metal Oxide)	500V	26A (Tc)	10V	4V @ 250µA	86nC @ 10V	1980pF @ 100V	±30V	-	250W (Tc)	145 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STFW69N65M5	STMicroelectronics	MOSFET N-CH 650V 58A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6420pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 29A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock16,992	MOSFET (Metal Oxide)	650V	58A (Tc)	10V	5V @ 250µA	143nC @ 10V	6420pF @ 100V	±25V	-	79W (Tc)	45 mOhm @ 29A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
AOD2N60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 2A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 56.8W (Tc) Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock144,612	MOSFET (Metal Oxide)	600V	2A (Tc)	10V	4.5V @ 250µA	11nC @ 10V	325pF @ 25V	±30V	-	56.8W (Tc)	4.4 Ohm @ 1A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SQJ444EP-T1_BE3	Vishay Siliconix	N-CHANNEL 40-V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock18,000	MOSFET (Metal Oxide)	40 V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	80 nC @ 10 V	5000 pF @ 25 V	±20V	-	68W (Tc)	3.2mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SQ3495EV-T1_GE3	Vishay Siliconix	MOSFET P-CH 30V 8A 6TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 20 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock46,848	MOSFET (Metal Oxide)	30 V	8A (Tc)	2.5V, 10V	1.4V @ 250µA	41 nC @ 4.5 V	3950 pF @ 20 V	±12V	-	5W (Tc)	21mOhm @ 5A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SQJ403EP-T1_GE3	Vishay Siliconix	MOSFET P-CH 30V 30A PPAK SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	109 nC @ 10 V	4500 pF @ 15 V	±20V	-	68W (Tc)	8.5mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
APT1201R4SFLLG	Microchip Technology	MOSFET N-CH 1200V 9A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	9A (Tc)	-	5V @ 1mA	120 nC @ 10 V	2500 pF @ 25 V	-	-	-	1.4Ohm @ 4.5A, 10V	-	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IRFB5620PBFXKMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 144W (Tc) Rds On (Max) @ Id, Vgs: 72.5mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-904 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	25A (Tc)	10V	5V @ 100µA	38 nC @ 10 V	1710 pF @ 50 V	±20V	-	144W (Tc)	72.5mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-904	TO-220-3
IGLR60R260D1XUMA1	Infineon Technologies	GAN HV FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 10.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 690µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-7 Package / Case: 8-PowerTDFN	Package: -	Stock14,889	GaNFET (Gallium Nitride)	600 V	10.4A (Tc)	-	1.6V @ 690µA	-	110 pF @ 400 V	-10V	-	52W (Tc)	-	-40°C ~ 150°C (TJ)	Surface Mount	PG-TSON-8-7	8-PowerTDFN
DMT67M8LPSW-13	Diodes Incorporated	MOSFET N-CH 60V 17.3A/82A PWRDI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta), 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 (Type Q) Package / Case: 8-PowerTDFN	Package: -	Stock14,835	MOSFET (Metal Oxide)	60 V	17.3A (Ta), 82A (Tc)	4.5V, 10V	2.5V @ 250µA	37.5 nC @ 10 V	2130 pF @ 30 V	±20V	-	2.8W (Ta), 62.5W (Tc)	6.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI5060-8 (Type Q)	8-PowerTDFN
SQD50N04-09H-GE3	Vishay Siliconix	MOSFET N-CH 40V 50A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	50A (Tc)	-	5V @ 250µA	76 nC @ 10 V	4240 pF @ 25 V	-	-	-	9mOhm @ 20A, 10V	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
ICE10N60	IceMOS Technology	Superjunction MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	10A (Tc)	10V	3.9V @ 250µA	43 nC @ 10 V	1250 pF @ 25 V	±20V	-	95W (Tc)	330mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
DMG3406L-7-ML	MOSLEADER	N 30V 3.6A SOT23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-