Page 24 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7524D1GTRPBF
Infineon Technologies

MOSFET P-CH 20V 1.7A MICRO8

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock111,348
IRLR7833CTRRPBF
Infineon Technologies

MOSFET N-CH 30V 140A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,464
BUK951R6-30E,127
NXP

MOSFET N-CH 30V 120A TO220AB

Package: TO-220-3

Stock3,888
2SJ681(Q)
Toshiba Semiconductor and Storage

MOSFET P-CH 60V 5A PW-MOLD

Package: TO-251-3 Stub Leads, IPak

Stock11,880
FDC796N_F077
Fairchild/ON Semiconductor

MOSFET N-CH 30V 12.5A 6-SSOT

Package: 6-SSOT Flat-lead, SuperSOT?-6 FLMP

Stock2,400
NTB45N06G
ON Semiconductor

MOSFET N-CH 60V 45A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock60,012
STF26NM60N-H
STMicroelectronics

MOSFET N-CH 600V 20A TO-220FP

Package: TO-220-3 Full Pack

Stock3,424
AUIRFS3306TRL
Infineon Technologies

MOSFET N-CH 60V 160A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,848
IPB120N10S405ATMA1
Infineon Technologies

MOSFET N-CH TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,232
IXTQ22N60P
IXYS

MOSFET N-CH 600V 22A TO-3P

Package: TO-3P-3, SC-65-3

Stock2,112
IPD80R2K0P7ATMA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,592
PMV28UNEAR
Nexperia USA Inc.

MOSFET N-CH 20V TO-236AB

Package: TO-236-3, SC-59, SOT-23-3

Stock4,544
MCH3475-TL-W
ON Semiconductor

MOSFET N-CH 30V 1.8A MCPH3

Package: 3-SMD, Flat Leads

Stock3,440
TSM60NB380CP ROG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,160
RE1C002UNTCL
Rohm Semiconductor

MOSFET N-CH 20V 0.2A EMT3

Package: SC-89, SOT-490

Stock1,080,000
FDB3652_F085
Fairchild/ON Semiconductor

MOSFET N-CH 100V 61A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,264
NVD5863NLT4G-VF01
ON Semiconductor

MOSFET N-CH 60V 14.9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,248
DMP3160L-7
Diodes Incorporated

MOSFET P-CH 30V 2.7A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock1,097,160
PMZ290UNEYL
Nexperia USA Inc.

MOSFET N-CH 20V 1A

Package: SC-101, SOT-883

Stock182,508
IRFR4620PBF
Infineon Technologies

MOSFET N-CH 200V 24A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock21,366

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7524D1GTRPBF	Infineon Technologies	MOSFET P-CH 20V 1.7A MICRO8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-uSMD Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock111,348	MOSFET (Metal Oxide)	20V	1.7A (Ta)	2.7V, 4.5V	700mV @ 250µA	8.2nC @ 4.5V	240pF @ 15V	±12V	Schottky Diode (Isolated)	1.25W (Ta)	270 mOhm @ 1.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-uSMD	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IRLR7833CTRRPBF	Infineon Technologies	MOSFET N-CH 30V 140A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 140A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,464	MOSFET (Metal Oxide)	30V	140A (Ta)	4.5V, 10V	-	-	-	±20V	-	140W (Tc)	-	-	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK951R6-30E,127	NXP	MOSFET N-CH 30V 120A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 16150pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 349W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,888	MOSFET (Metal Oxide)	30V	120A (Tc)	5V, 10V	2.1V @ 1mA	113nC @ 5V	16150pF @ 25V	±10V	-	349W (Tc)	1.4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
2SJ681(Q)	Toshiba Semiconductor and Storage	MOSFET P-CH 60V 5A PW-MOLD FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Ta) Rds On (Max) @ Id, Vgs: 170 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PW-MOLD2 Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock11,880	MOSFET (Metal Oxide)	60V	5A (Ta)	4V, 10V	2V @ 1mA	15nC @ 10V	700pF @ 10V	±20V	-	20W (Ta)	170 mOhm @ 2.5A, 10V	150°C (TJ)	Through Hole	PW-MOLD2	TO-251-3 Stub Leads, IPak
FDC796N_F077	Fairchild/ON Semiconductor	MOSFET N-CH 30V 12.5A 6-SSOT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1444pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 FLMP Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP	Package: 6-SSOT Flat-lead, SuperSOT?-6 FLMP	Stock2,400	MOSFET (Metal Oxide)	30V	12.5A (Ta)	4.5V, 10V	3V @ 250µA	20nC @ 5V	1444pF @ 15V	±20V	-	2W (Ta)	9 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6 FLMP	6-SSOT Flat-lead, SuperSOT?-6 FLMP
NTB45N06G	ON Semiconductor	MOSFET N-CH 60V 45A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Rds On (Max) @ Id, Vgs: 26 mOhm @ 22.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock60,012	MOSFET (Metal Oxide)	60V	45A (Ta)	10V	4V @ 250µA	46nC @ 10V	1725pF @ 25V	±20V	-	2.4W (Ta), 125W (Tj)	26 mOhm @ 22.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STF26NM60N-H	STMicroelectronics	MOSFET N-CH 600V 20A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,424	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	4V @ 250µA	60nC @ 10V	1800pF @ 50V	±25V	-	30W (Tc)	165 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
AUIRFS3306TRL	Infineon Technologies	MOSFET N-CH 60V 160A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4520pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,848	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 150µA	125nC @ 10V	4520pF @ 50V	±20V	-	230W (Tc)	4.2 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB120N10S405ATMA1	Infineon Technologies	MOSFET N-CH TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,232	MOSFET (Metal Oxide)	100V	120A (Tc)	10V	3.5V @ 120µA	91nC @ 10V	6540pF @ 25V	±20V	-	190W (Tc)	5 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTQ22N60P	IXYS	MOSFET N-CH 600V 22A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock2,112	MOSFET (Metal Oxide)	600V	22A (Tc)	10V	5.5V @ 250µA	62nC @ 10V	3600pF @ 25V	±30V	-	400W (Tc)	350 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IPD80R2K0P7ATMA1	Infineon Technologies	MOSFET N-CH 800V COOLMOS TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 500V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 24W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 940mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,592	MOSFET (Metal Oxide)	800V	3A (Tc)	10V	3.5V @ 50µA	9nC @ 10V	175pF @ 500V	±20V	-	24W (Tc)	2 Ohm @ 940mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
PMV28UNEAR	Nexperia USA Inc.	MOSFET N-CH 20V TO-236AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 510mW (Ta), 3.9W (Tc) Rds On (Max) @ Id, Vgs: 32 mOhm @ 4.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,544	MOSFET (Metal Oxide)	20V	4.7A (Ta)	1.8V, 4.5V	1V @ 250µA	10nC @ 4.5V	490pF @ 10V	±8V	-	510mW (Ta), 3.9W (Tc)	32 mOhm @ 4.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
MCH3475-TL-W	ON Semiconductor	MOSFET N-CH 30V 1.8A MCPH3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 180 mOhm @ 900mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70FL/MCPH3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock3,440	MOSFET (Metal Oxide)	30V	1.8A (Ta)	4V, 10V	2.6V @ 1mA	2nC @ 10V	88pF @ 10V	±20V	-	800mW (Ta)	180 mOhm @ 900mA, 10V	150°C (TJ)	Surface Mount	SC-70FL/MCPH3	3-SMD, Flat Leads
TSM60NB380CP ROG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, SUPER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 2.85A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,160	MOSFET (Metal Oxide)	600V	9.5A (Tc)	10V	4V @ 250µA	19.4nC @ 10V	795pF @ 100V	±30V	-	83W (Tc)	380 mOhm @ 2.85A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
RE1C002UNTCL	Rohm Semiconductor	MOSFET N-CH 20V 0.2A EMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 100mA, 2.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3F (SOT-416FL) Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock1,080,000	MOSFET (Metal Oxide)	20V	200mA (Ta)	1.2V, 2.5V	1V @ 1mA	-	25pF @ 10V	±8V	-	150mW (Ta)	1.2 Ohm @ 100mA, 2.5V	150°C (TJ)	Surface Mount	EMT3F (SOT-416FL)	SC-89, SOT-490
FDB3652_F085	Fairchild/ON Semiconductor	MOSFET N-CH 100V 61A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 61A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,264	MOSFET (Metal Oxide)	100V	9A (Ta), 61A (Tc)	6V, 10V	4V @ 250µA	53nC @ 10V	2880pF @ 25V	±20V	-	150W (Tc)	16 mOhm @ 61A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVD5863NLT4G-VF01	ON Semiconductor	MOSFET N-CH 60V 14.9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 41A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,248	MOSFET (Metal Oxide)	60V	14.9A (Ta), 82A (Tc)	4.5V, 10V	3V @ 250µA	70nC @ 10V	3850pF @ 25V	±20V	-	3.1W (Ta), 96W (Tc)	7.1 mOhm @ 41A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
DMP3160L-7	Diodes Incorporated	MOSFET P-CH 30V 2.7A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 227pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.08W (Ta) Rds On (Max) @ Id, Vgs: 122 mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,097,160	MOSFET (Metal Oxide)	30V	2.7A (Ta)	4.5V, 10V	2.1V @ 250µA	-	227pF @ 10V	±20V	-	1.08W (Ta)	122 mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
PMZ290UNEYL	Nexperia USA Inc.	MOSFET N-CH 20V 1A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 350mW (Ta), 5.43W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 Package / Case: SC-101, SOT-883	Package: SC-101, SOT-883	Stock182,508	MOSFET (Metal Oxide)	20V	1A (Ta)	1.8V, 4.5V	950mV @ 250µA	0.68nC @ 4.5V	83pF @ 10V	±8V	-	350mW (Ta), 5.43W (Tc)	380 mOhm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1006-3	SC-101, SOT-883
IRFR4620PBF	Infineon Technologies	MOSFET N-CH 200V 24A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 144W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock21,366	MOSFET (Metal Oxide)	200V	24A (Tc)	10V	5V @ 100µA	38nC @ 10V	1710pF @ 50V	±20V	-	144W (Tc)	78 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SIB410DK-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 9A 8SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 13W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 3.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-75-6L Single Package / Case: PowerPAK? SC-75-6L	Package: PowerPAK? SC-75-6L	Stock22,152	MOSFET (Metal Oxide)	30V	9A (Tc)	1.8V, 4.5V	1V @ 250µA	15nC @ 8V	560pF @ 15V	±8V	-	2.5W (Ta), 13W (Tc)	42 mOhm @ 3.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-75-6L Single	PowerPAK? SC-75-6L
STF18N65M5	STMicroelectronics	MOSFET N-CH 650V 15A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock14,520	MOSFET (Metal Oxide)	650V	15A (Tc)	10V	5V @ 250µA	31nC @ 10V	1240pF @ 100V	±25V	-	25W (Tc)	220 mOhm @ 7.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IPB027N10N3GATMA1	Infineon Technologies	MOSFET N-CH 100V 120A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock45,006	MOSFET (Metal Oxide)	100V	120A (Tc)	6V, 10V	3.5V @ 275µA	206nC @ 10V	14800pF @ 50V	±20V	-	300W (Tc)	2.7 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FK3306010L	Panasonic Electronic Components	MOSFET N-CH 60V 100MA SSSMINI3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SSSMini3-F2-B Package / Case: SOT-723	Package: SOT-723	Stock550,896	MOSFET (Metal Oxide)	60V	100mA (Ta)	2.5V, 4V	1.5V @ 1µA	-	12pF @ 3V	±12V	-	100mW (Ta)	12 Ohm @ 10mA, 4V	150°C (TJ)	Surface Mount	SSSMini3-F2-B	SOT-723
SIS427EDN-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 50A 1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1930pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock53,874	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	66nC @ 10V	1930pF @ 15V	±25V	-	3.7W (Ta), 52W (Tc)	10.6 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
2SJ205-T1-AZ	Renesas Electronics Corporation	P-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMP68D1LFB-7B	Diodes Incorporated	DIODE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 65 V Current - Continuous Drain (Id) @ 25°C: 215mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X1-DFN1006-3 Package / Case: 3-UFDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	65 V	215mA (Ta)	2.5V, 5V	2.1V @ 250µA	0.6 nC @ 5 V	42 pF @ 30 V	±20V	-	700mW	8Ohm @ 100mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	X1-DFN1006-3	3-UFDFN
RQ3P300BHTB1	Rohm Semiconductor	NCH 100V 39A, HSMT8, POWER MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: -	Stock43,107	MOSFET (Metal Oxide)	100 V	39A (Tc)	6V, 10V	4V @ 1mA	36 nC @ 10 V	2040 pF @ 50 V	±20V	-	32W (Tc)	15.5mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN