Page 20 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPB065N06L G
Infineon Technologies

MOSFET N-CH 60V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock390,000
IRFL4310PBF
Infineon Technologies

MOSFET N-CH 100V 1.6A SOT223

Package: TO-261-4, TO-261AA

Stock259,188
IRF7807VD2TR
Infineon Technologies

MOSFET N-CH 30V 8.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,100
JANTX2N6764
Microsemi Corporation

MOSFET N-CH TO-204AE TO-3

Package: TO-204AE

Stock6,352
FDP085N10A
Fairchild/ON Semiconductor

MOSFET N-CH 100V TO-220-3

Package: TO-220-3

Stock121,308
SI7392DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 9A PPAK SO-8

Package: PowerPAK? SO-8

Stock3,456
IRFU4105ZTRR
Vishay Siliconix

MOSFET N-CH 55V 30A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,032
IXTU55N075T
IXYS

MOSFET N-CH 75V 55A TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,480
IRFR9024TRLPBF
Vishay Siliconix

MOSFET P-CH 60V 8.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,072
DMT3004LFG-13
Diodes Incorporated

MOSFET NCH 30V 10.4A POWERDI

Package: 8-PowerVDFN

Stock6,192
RTL030P02TR
Rohm Semiconductor

MOSFET P-CH 20V 3A TUMT6

Package: 6-SMD, Flat Leads

Stock240,780
STD90N03L
STMicroelectronics

MOSFET N-CH 30V 80A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock183,756
FQD5N60CTM
Fairchild/ON Semiconductor

MOSFET N-CH 600V 2.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock164,676
SI7102DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 12V 35A 1212-8

Package: PowerPAK? 1212-8

Stock35,100
CSD18503Q5A
Texas Instruments

MOSFET N-CH 40V 8SON

Package: 8-PowerTDFN

Stock68,328
STI28N60M2
STMicroelectronics

MOSFET N-CH 600V 22A I2PAK

Package: -

Stock18,000
SISS5808DN-T1-GE3
Vishay Siliconix

N-CHANNEL 80 V (D-S) MOSFET POWE

Package: -

Request a Quote
NVMTS1D0N04CLTXG
onsemi

T6 40V LL AIZU SINGLE NCH PQFN 8

Package: -

Request a Quote
DMN2040U-7
Diodes Incorporated

MOSFET N-CH 20V 6A SOT23 T&R 3

Package: -

Stock18,159
TSM2301ACX-RFG-ML
MOSLEADER

P-Channel -20V -2.8A SOT-23

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPB065N06L G	Infineon Technologies	MOSFET N-CH 60V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 157nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,000	MOSFET (Metal Oxide)	60V	80A (Tc)	4.5V, 10V	2V @ 180µA	157nC @ 10V	5100pF @ 30V	±20V	-	250W (Tc)	6.2 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFL4310PBF	Infineon Technologies	MOSFET N-CH 100V 1.6A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock259,188	MOSFET (Metal Oxide)	100V	1.6A (Ta)	10V	4V @ 250µA	25nC @ 10V	330pF @ 25V	±20V	-	1W (Ta)	200 mOhm @ 1.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRF7807VD2TR	Infineon Technologies	MOSFET N-CH 30V 8.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,100	MOSFET (Metal Oxide)	30V	8.3A (Ta)	4.5V	1V @ 250µA	14nC @ 4.5V	-	±20V	Schottky Diode (Isolated)	2.5W (Ta)	25 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
JANTX2N6764	Microsemi Corporation	MOSFET N-CH TO-204AE TO-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	Package: TO-204AE	Stock6,352	MOSFET (Metal Oxide)	100V	38A (Tc)	10V	4V @ 250µA	125nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	65 mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3	TO-204AE
FDP085N10A	Fairchild/ON Semiconductor	MOSFET N-CH 100V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2695pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 96A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock121,308	MOSFET (Metal Oxide)	100V	96A (Tc)	10V	4V @ 250µA	40nC @ 10V	2695pF @ 50V	±20V	-	188W (Tc)	8.5 mOhm @ 96A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
SI7392DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 9A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 9.75 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock3,456	MOSFET (Metal Oxide)	30V	9A (Ta)	4.5V, 10V	3V @ 250µA	15nC @ 4.5V	-	±20V	-	1.8W (Ta)	9.75 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
IRFU4105ZTRR	Vishay Siliconix	MOSFET N-CH 55V 30A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,032	MOSFET (Metal Oxide)	55V	30A (Tc)	10V	4V @ 250µA	27nC @ 10V	740pF @ 25V	±20V	-	48W (Tc)	24.5 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
IXTU55N075T	IXYS	MOSFET N-CH 75V 55A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,480	MOSFET (Metal Oxide)	75V	55A (Tc)	-	4V @ 25µA	-	-	-	-	-	-	-	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
IRFR9024TRLPBF	Vishay Siliconix	MOSFET P-CH 60V 8.8A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,072	MOSFET (Metal Oxide)	60V	8.8A (Tc)	10V	4V @ 250µA	19nC @ 10V	570pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	280 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
DMT3004LFG-13	Diodes Incorporated	MOSFET NCH 30V 10.4A POWERDI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,192	MOSFET (Metal Oxide)	30V	10.4A (Ta), 25A (Tc)	4.5V, 10V	3V @ 250µA	44nC @ 10V	2370pF @ 15V	+20V, -16V	-	2.1W (Ta), 42W (Tc)	4.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerVDFN
RTL030P02TR	Rohm Semiconductor	MOSFET P-CH 20V 3A TUMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock240,780	MOSFET (Metal Oxide)	20V	3A (Ta)	2.5V, 4.5V	2V @ 1mA	8nC @ 4.5V	760pF @ 10V	±12V	-	1W (Ta)	70 mOhm @ 3A, 4.5V	150°C (TJ)	Surface Mount	TUMT6	6-SMD, Flat Leads
STD90N03L	STMicroelectronics	MOSFET N-CH 30V 80A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2805pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock183,756	MOSFET (Metal Oxide)	30V	80A (Tc)	5V, 10V	1V @ 250µA	32nC @ 5V	2805pF @ 25V	±20V	-	95W (Tc)	5.7 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD5N60CTM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 2.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock164,676	MOSFET (Metal Oxide)	600V	2.8A (Tc)	10V	4V @ 250µA	19nC @ 10V	670pF @ 25V	±30V	-	2.5W (Ta), 49W (Tc)	2.5 Ohm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SI7102DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 12V 35A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 15A, 4.5V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock35,100	MOSFET (Metal Oxide)	12V	35A (Tc)	2.5V, 4.5V	1V @ 250µA	110nC @ 8V	3720pF @ 6V	±8V	-	3.8W (Ta), 52W (Tc)	3.8 mOhm @ 15A, 4.5V	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
CSD18503Q5A	Texas Instruments	MOSFET N-CH 40V 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2640pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock68,328	MOSFET (Metal Oxide)	40V	19A (Ta), 100A (Tc)	4.5V, 10V	2.3V @ 250µA	32nC @ 10V	2640pF @ 20V	±20V	-	3.1W (Ta), 120W (Tc)	4.3 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
STI28N60M2	STMicroelectronics	MOSFET N-CH 600V 22A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 (I2PAK) Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Stock18,000	MOSFET (Metal Oxide)	600 V	22A (Tc)	10V	4V @ 250µA	36 nC @ 10 V	1440 pF @ 100 V	±25V	-	170W (Tc)	150mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262 (I2PAK)	TO-262-3 Long Leads, I2PAK, TO-262AA
SISS5808DN-T1-GE3	Vishay Siliconix	N-CHANNEL 80 V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 18.3A (Ta), 66.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Rds On (Max) @ Id, Vgs: 119mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	18.3A (Ta), 66.6A (Tc)	7.5V, 10V	4V @ 250µA	24 nC @ 10 V	1210 pF @ 40 V	±20V	-	5W (Ta), 65.7W (Tc)	119mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8S	PowerPAK® 1212-8S
NVMTS1D0N04CLTXG	onsemi	T6 40V LL AIZU SINGLE NCH PQFN 8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 51.3A (Ta), 291A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 210µA Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7408 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.7W (Ta), 153W (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (8.3x8.4) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	51.3A (Ta), 291A (Tc)	4.5V, 10V	3V @ 210µA	122 nC @ 10 V	7408 pF @ 25 V	±20V	-	4.7W (Ta), 153W (Tc)	1mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-DFNW (8.3x8.4)	8-PowerTDFN
DMN2040U-7	Diodes Incorporated	MOSFET N-CH 20V 6A SOT23 T&R 3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock18,159	MOSFET (Metal Oxide)	20 V	6A (Ta)	2.5V, 4.5V	1.2V @ 250µA	7.5 nC @ 4.5 V	667 pF @ 10 V	±12V	-	800mW (Ta)	25mOhm @ 8.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
TSM2301ACX-RFG-ML	MOSLEADER	P-Channel -20V -2.8A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJQ4444P-AU_R2_000A1	Panjit International Inc.	40V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333-8 Package / Case: 8-PowerVDFN	Package: -	Stock3,621	MOSFET (Metal Oxide)	40 V	14A (Ta), 70A (Tc)	4.5V, 10V	2.5V @ 250µA	25 nC @ 4.5 V	1258 pF @ 25 V	±20V	-	2.4W (Ta), 60W (Tc)	5.5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN3333-8	8-PowerVDFN
ACMSN2312T-HF	Comchip Technology	MOSFET N-CH 20V 4.9A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 8 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	4.9A (Ta)	-	1.2V @ 250µA	14 nC @ 4.5 V	500 pF @ 8 V	±8V	-	750mW (Ta)	31mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IAUTN12S5N017ATMA1	Infineon Technologies	MOSFET_(120V 300V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	Package: -	Stock2,991	MOSFET (Metal Oxide)	120 V	-	-	-	-	-	-	-	-	-	-55°C ~ 175°C	Surface Mount	PG-HSOF-8-1	8-PowerSFN
FW905-TL-E	Sanyo	P-CHANNEL SILICON MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMP4065SK3-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V TO252 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	15A (Ta)	4.5V, 10V	3V @ 250µA	12.2 nC @ 10 V	650 pF @ 20 V	±20V	-	3W (Ta)	70mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
STP3NK50Z	STMicroelectronics	MOSFET N-CH 500V 2.3A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock27,087	MOSFET (Metal Oxide)	500 V	2.3A (Tc)	10V	4.5V @ 50µA	15 nC @ 10 V	280 pF @ 25 V	±30V	-	45W (Tc)	3.3Ohm @ 1.15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STS3402-ML	MOSLEADER	Single-N 30V 4.6A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6006JND3TL1	Rohm Semiconductor	MOSFET N-CH 600V 6A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 7V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock36	MOSFET (Metal Oxide)	600 V	6A (Tc)	15V	7V @ 800µA	15.5 nC @ 15 V	410 pF @ 100 V	±30V	-	86W (Tc)	936mOhm @ 3A, 15V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63