Page 27 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

FQD6N40TF
Fairchild/ON Semiconductor

MOSFET N-CH 400V 4.2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,164
STFILED625
STMicroelectronics

MOSFET N-CH 620V I2PAK-FP

Package: TO-262-3 Full Pack, I2Pak

Stock3,984
IPW60R099CPAFKSA1
Infineon Technologies

MOSFET N-CH 650V 31A TO-247

Package: TO-247-3

Stock2,144
IPC302N12N3X1SA1
Infineon Technologies

MOSFET N-CH 120V BARE DIE

Package: Die

Stock2,800
IPD70N12S311ATMA1
Infineon Technologies

MOSFET N-CH TO-252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,048
IXFR26N50
IXYS

MOSFET N-CH 500V 26A ISOPLUS247

Package: ISOPLUS247?

Stock3,264
DMTH4005SCT
Diodes Incorporated

MOSFET NCH 40V 100A TO220AB

Package: TO-220-3

Stock6,432
AOW11S60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 11A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,528
SI7634BDP-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 40A PPAK SO-8

Package: PowerPAK? SO-8

Stock1,137,132
STB18N60M2
STMicroelectronics

MOSFET N-CH 600V D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,208
IRF3315PBF
Infineon Technologies

MOSFET N-CH 150V 23A TO-220AB

Package: TO-220-3

Stock6,300
IRF620PBF
Vishay Siliconix

MOSFET N-CH 200V 5.2A TO-220AB

Package: TO-220-3

Stock93,288
BSB013NE2LXI
Infineon Technologies

MOSFET N-CH 25V 163A WDSON-2

Package: 3-WDSON

Stock67,284
IPD530N15N3GATMA1
Infineon Technologies

MOSFET N-CH 150V 21A

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,744
TK560P60Y,RQ
Toshiba Semiconductor and Storage

MOSFET TRANSISTOR DPAK(OS) PD

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock35,160
STD5N20LT4
STMicroelectronics

MOSFET N-CH 200V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock554,352
IRF9610STRRPBF
Vishay Siliconix

N-CHANNEL200V

Package: -

Request a Quote
DMTH12H007SPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 101V~250V PowerDI5

Package: -

Request a Quote
2SK3092-TL-E
onsemi

NCH 15V DRIVE SERIES

Package: -

Request a Quote
MCAC80N08Y-TP
Micro Commercial Co

MOSFET N-CH 80V 80A DFN5060

Package: -

Stock4,875

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FQD6N40TF	Fairchild/ON Semiconductor	MOSFET N-CH 400V 4.2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,164	MOSFET (Metal Oxide)	400V	4.2A (Tc)	10V	5V @ 250µA	17nC @ 10V	620pF @ 25V	±30V	-	2.5W (Ta), 50W (Tc)	1.15 Ohm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STFILED625	STMicroelectronics	MOSFET N-CH 620V I2PAK-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock3,984	MOSFET (Metal Oxide)	620V	4.5A (Tc)	10V	4.5V @ 50µA	23nC @ 10V	560pF @ 50V	±30V	-	25W (Tc)	2 Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
IPW60R099CPAFKSA1	Infineon Technologies	MOSFET N-CH 650V 31A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 18A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock2,144	MOSFET (Metal Oxide)	600V	31A (Tc)	10V	3.5V @ 1.2mA	80nC @ 10V	2800pF @ 100V	±20V	-	255W (Tc)	105 mOhm @ 18A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPC302N12N3X1SA1	Infineon Technologies	MOSFET N-CH 120V BARE DIE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 275µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Sawn on foil Package / Case: Die	Package: Die	Stock2,800	MOSFET (Metal Oxide)	120V	1A (Tj)	10V	4V @ 275µA	-	-	-	-	-	100 mOhm @ 2A, 10V	-	Surface Mount	Sawn on foil	Die
IPD70N12S311ATMA1	Infineon Technologies	MOSFET N-CH TO-252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4355pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,048	MOSFET (Metal Oxide)	120V	70A (Tc)	10V	4V @ 83µA	65nC @ 10V	4355pF @ 25V	±20V	-	125W (Tc)	11.1 mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFR26N50	IXYS	MOSFET N-CH 500V 26A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock3,264	MOSFET (Metal Oxide)	500V	26A (Tc)	10V	4V @ 4mA	160nC @ 10V	4200pF @ 25V	±20V	-	250W (Tc)	200 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
DMTH4005SCT	Diodes Incorporated	MOSFET NCH 40V 100A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3062pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,432	MOSFET (Metal Oxide)	40V	100A (Tc)	10V	4V @ 250µA	49.1nC @ 10V	3062pF @ 20V	±20V	-	2.8W (Ta), 125W (Tc)	4.7 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
AOW11S60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 11A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 178W (Tc) Rds On (Max) @ Id, Vgs: 399 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,528	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4.1V @ 250µA	11nC @ 10V	545pF @ 100V	±30V	-	178W (Tc)	399 mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
SI7634BDP-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 40A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock1,137,132	MOSFET (Metal Oxide)	30V	40A (Tc)	4.5V, 10V	2.6V @ 250µA	68nC @ 10V	3150pF @ 15V	±20V	-	5W (Ta), 48W (Tc)	5.4 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
STB18N60M2	STMicroelectronics	MOSFET N-CH 600V D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 791pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,208	MOSFET (Metal Oxide)	600V	13A (Tc)	10V	4V @ 250µA	21.5nC @ 10V	791pF @ 100V	±25V	-	110W (Tc)	280 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3315PBF	Infineon Technologies	MOSFET N-CH 150V 23A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,300	MOSFET (Metal Oxide)	150V	23A (Tc)	10V	4V @ 250µA	95nC @ 10V	1300pF @ 25V	±20V	-	94W (Tc)	70 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF620PBF	Vishay Siliconix	MOSFET N-CH 200V 5.2A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock93,288	MOSFET (Metal Oxide)	200V	5.2A (Tc)	10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	±20V	-	50W (Tc)	800 mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
BSB013NE2LXI	Infineon Technologies	MOSFET N-CH 25V 163A WDSON-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2, CanPAK M? Package / Case: 3-WDSON	Package: 3-WDSON	Stock67,284	MOSFET (Metal Oxide)	25V	36A (Ta), 163A (Tc)	4.5V, 10V	2V @ 250µA	62nC @ 10V	4400pF @ 12V	±20V	-	2.8W (Ta), 57W (Tc)	1.3 mOhm @ 30A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	MG-WDSON-2, CanPAK M?	3-WDSON
IPD530N15N3GATMA1	Infineon Technologies	MOSFET N-CH 150V 21A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 53 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,744	MOSFET (Metal Oxide)	150V	21A (Tc)	8V, 10V	4V @ 35µA	12nC @ 10V	887pF @ 75V	±20V	-	68W (Tc)	53 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
TK560P60Y,RQ	Toshiba Semiconductor and Storage	MOSFET TRANSISTOR DPAK(OS) PD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock35,160	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	4V @ 240µA	14.5nC @ 10V	380pF @ 300V	±30V	-	60W (Tc)	560 mOhm @ 3.5A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD5N20LT4	STMicroelectronics	MOSFET N-CH 200V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 2.5A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock554,352	MOSFET (Metal Oxide)	200V	5A (Tc)	5V	2.5V @ 50µA	6nC @ 5V	242pF @ 25V	±20V	-	33W (Tc)	700 mOhm @ 2.5A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF9610STRRPBF	Vishay Siliconix	N-CHANNEL200V FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	1.8A (Tc)	10V	4V @ 250µA	11 nC @ 10 V	170 pF @ 25 V	±20V	-	3W (Ta), 20W (Tc)	3Ohm @ 900mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMTH12H007SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 101V~250V PowerDI5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W Rds On (Max) @ Id, Vgs: 8.9mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	120 V	84A (Tc)	6V, 10V	4V @ 250µA	44 nC @ 10 V	3142 pF @ 60 V	±20V	-	3.5W	8.9mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
2SK3092-TL-E	onsemi	NCH 15V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCAC80N08Y-TP	Micro Commercial Co	MOSFET N-CH 80V 80A DFN5060 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5575 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Stock4,875	MOSFET (Metal Oxide)	80 V	80A (Tc)	-	4V @ 250µA	102 nC @ 10 V	5575 pF @ 40 V	±20V	-	35W	3.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
IRFU310BTU	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 850mA,10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Stub Leads, IPAK	Package: -	Request a Quote	MOSFET (Metal Oxide)	400 V	1.7A (Tc)	10V	4V @ 250µA	10 nC @ 10 V	330 pF @ 25 V	±30V	-	2.5W (Ta), 26W (Tc)	3.4Ohm @ 850mA,10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Stub Leads, IPAK
BSC005N03LS5ATMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 433A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 188W (Tc) Rds On (Max) @ Id, Vgs: 0.55mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	Package: -	Stock19,545	MOSFET (Metal Oxide)	30 V	42A (Ta), 433A (Tc)	4.5V, 10V	2V @ 250µA	122 nC @ 10 V	8900 pF @ 15 V	±20V	-	3W (Ta), 188W (Tc)	0.55mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
NVMTS0D7N04CTXG	onsemi	MOSFET N-CH 40V 51A/430A 8DFNW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 430A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9281 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 273W (Tc) Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (8.3x8.4) Package / Case: 8-PowerTDFN	Package: -	Stock9,000	MOSFET (Metal Oxide)	40 V	51A (Ta), 430A (Tc)	10V	4V @ 250µA	140 nC @ 10 V	9281 pF @ 25 V	±20V	-	3.9W (Ta), 273W (Tc)	0.67mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-DFNW (8.3x8.4)	8-PowerTDFN
IPT019N08N5ATMA1	Infineon Technologies	MOSFET N-CH 80V 32A/247A 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 247A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 159µA Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 150A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	Package: -	Stock11,970	MOSFET (Metal Oxide)	80 V	32A (Ta), 247A (Tc)	6V, 10V	3.8V @ 159µA	127 nC @ 10 V	9200 pF @ 40 V	±20V	-	231W (Tc)	1.9mOhm @ 150A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
PJD55N04V-AU_L2_002A1	Panjit International Inc.	40V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 128A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	21.5A (Ta), 128A (Tc)	7V, 10V	3.5V @ 50µA	34 nC @ 10 V	2540 pF @ 25 V	±20V	-	3W (Ta), 107W (Tc)	3.6mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMN95H8D5HCTI	Diodes Incorporated	MOSFET N-CHANNEL 950V ITO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Stock54	MOSFET (Metal Oxide)	950 V	2.5A (Tc)	10V	5V @ 250µA	7.9 nC @ 10 V	470 pF @ 25 V	±30V	-	30W (Tc)	7Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220AB	TO-220-3 Full Pack, Isolated Tab
RSQ035P03HZGTR	Rohm Semiconductor	MOSFET P-CH 30V 3.5A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock9,000	MOSFET (Metal Oxide)	30 V	3.5A (Ta)	4V, 10V	2.5V @ 1mA	9.2 nC @ 5 V	780 pF @ 10 V	±20V	-	950mW (Ta)	65mOhm @ 3.5A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
DMT10H9M9SSS-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V SO-8 T&R FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-