Page 29 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRF3805S-7P
Infineon Technologies

MOSFET N-CH 55V 160A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock36,000
SPB20N60S5ATMA1
Infineon Technologies

MOSFET N-CH 600V 20A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,016
SI4831BDY-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 6.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,528
IXTA182N055T
IXYS

MOSFET N-CH 55V 182A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,608
BSS123LT3G
ON Semiconductor

MOSFET N-CH 100V 170MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock7,904
PHX8NQ11T,127
NXP

MOSFET N-CH 110V 7.5A SOT186A

Package: TO-220-3 Full Pack, Isolated Tab

Stock7,936
NVMFS5C430NWFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN

Stock5,808
AOD424
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 20V 18A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock124,512
IXFB150N65X2
IXYS

MOSFET N-CH 650V 150A PLUS264

Package: TO-264-3, TO-264AA

Stock2,384
AON6242
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 18.5A DFN5X6

Package: 8-PowerSMD, Flat Leads

Stock60,408
NTF5P03T3G
ON Semiconductor

MOSFET P-CH 30V 3.7A SOT223

Package: TO-261-4, TO-261AA

Stock169,644
STY50N105DK5
STMicroelectronics

MOSFET N-CH 1.05KVV 44A MAX247

Package: TO-247-3

Stock6,576
STL110NS3LLH7
STMicroelectronics

MOSFET N-CH 30V 120A POWERFLAT

Package: 8-PowerSMD, Flat Leads

Stock6,672
3LN01M-TL-H
ON Semiconductor

MOSFET N-CH 30V 150MA MCP

Package: SC-70, SOT-323

Stock24,522
PMH600UNEH
Nexperia USA Inc.

MOSFET N-CH 20V 800MA DFN0606-3

Package: -

Stock24,144
IPDD60R075CFD7XTMA1
Infineon Technologies

MOSFET N-CH 600V 40A HDSOP-10

Package: -

Request a Quote
PSMN1R4-30YLD-1X
Nexperia USA Inc.

MOSFET

Package: -

Request a Quote
FDP2D9N12C
onsemi

PTNG 120V N-FET TO220

Package: -

Request a Quote
SIL2305B-TP
Micro Commercial Co

P-CHANNEL MOSFET,SOT23-6L

Package: -

Stock17,910
TSM60NB099CZ
Taiwan Semiconductor Corporation

600V, 38A, SINGLE N-CHANNEL POWE

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRF3805S-7P	Infineon Technologies	MOSFET N-CH 55V 160A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7820pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 140A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock36,000	MOSFET (Metal Oxide)	55V	160A (Tc)	10V	4V @ 250µA	200nC @ 10V	7820pF @ 25V	±20V	-	300W (Tc)	2.6 mOhm @ 140A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
SPB20N60S5ATMA1	Infineon Technologies	MOSFET N-CH 600V 20A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,016	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5.5V @ 1mA	103nC @ 10V	3000pF @ 25V	±20V	-	208W (Tc)	190 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI4831BDY-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 6.6A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 15V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,528	MOSFET (Metal Oxide)	30V	6.6A (Tc)	4.5V, 10V	3V @ 250µA	26nC @ 10V	625pF @ 15V	±20V	Schottky Diode (Isolated)	2W (Ta), 3.3W (Tc)	42 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IXTA182N055T	IXYS	MOSFET N-CH 55V 182A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 182A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,608	MOSFET (Metal Oxide)	55V	182A (Tc)	10V	4V @ 250µA	114nC @ 10V	4850pF @ 25V	±20V	-	360W (Tc)	5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSS123LT3G	ON Semiconductor	MOSFET N-CH 100V 170MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,904	MOSFET (Metal Oxide)	100V	170mA (Ta)	10V	2.8V @ 1mA	-	20pF @ 25V	±20V	-	225mW (Ta)	6 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
PHX8NQ11T,127	NXP	MOSFET N-CH 110V 7.5A SOT186A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 110V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 27.7W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock7,936	MOSFET (Metal Oxide)	110V	7.5A (Tc)	10V	4V @ 1mA	14.7nC @ 10V	360pF @ 25V	±20V	-	27.7W (Tc)	180 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
NVMFS5C430NWFT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,808	MOSFET (Metal Oxide)	40V	-	10V	3.5V @ 250µA	47nC @ 10V	3300pF @ 25V	±20V	-	3.8W (Ta), 106W (Tc)	1.7 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
AOD424	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 20V 18A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4630pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock124,512	MOSFET (Metal Oxide)	20V	18A (Ta), 45A (Tc)	2.5V, 4.5V	1.6V @ 250µA	43nC @ 10V	4630pF @ 10V	±12V	-	2.5W (Ta), 100W (Tc)	4.4 mOhm @ 20A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFB150N65X2	IXYS	MOSFET N-CH 650V 150A PLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1560W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock2,384	MOSFET (Metal Oxide)	650V	150A (Tc)	10V	5.5V @ 8mA	430nC @ 10V	20400pF @ 25V	±30V	-	1560W (Tc)	17 mOhm @ 75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS264?	TO-264-3, TO-264AA
AON6242	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 18.5A DFN5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6370pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock60,408	MOSFET (Metal Oxide)	60V	18.5A (Ta), 85A (Tc)	4.5V, 10V	2.5V @ 250µA	72nC @ 10V	6370pF @ 30V	±20V	-	2.3W (Ta), 83W (Tc)	3.6 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
NTF5P03T3G	ON Semiconductor	MOSFET P-CH 30V 3.7A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock169,644	MOSFET (Metal Oxide)	30V	3.7A (Ta)	4.5V, 10V	3V @ 250µA	38nC @ 10V	950pF @ 25V	±20V	-	1.56W (Ta)	100 mOhm @ 5.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
STY50N105DK5	STMicroelectronics	MOSFET N-CH 1.05KVV 44A MAX247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1050V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Supplier Device Package: MAX247? Package / Case: TO-247-3	Package: TO-247-3	Stock6,576	MOSFET (Metal Oxide)	1050V	44A (Tc)	10V	5V @ 100µA	175nC @ 10V	6600pF @ 100V	±30V	-	625W (Tc)	120 mOhm @ 22A, 10V	-55°C ~ 150°C	Through Hole	MAX247?	TO-247-3
STL110NS3LLH7	STMicroelectronics	MOSFET N-CH 30V 120A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock6,672	MOSFET (Metal Oxide)	30V	120A (Tc)	4.5V, 10V	2.3V @ 1mA	13.7nC @ 4.5V	2110pF @ 25V	±20V	-	4W (Ta), 75W (Tc)	3.4 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerSMD, Flat Leads
3LN01M-TL-H	ON Semiconductor	MOSFET N-CH 30V 150MA MCP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70 / MCPH3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock24,522	MOSFET (Metal Oxide)	30V	150mA (Ta)	1.5V, 4V	-	1.58nC @ 10V	7pF @ 10V	±10V	-	150mW (Ta)	3.7 Ohm @ 80mA, 4V	150°C (TJ)	Surface Mount	SC-70 / MCPH3	SC-70, SOT-323
PMH600UNEH	Nexperia USA Inc.	MOSFET N-CH 20V 800MA DFN0606-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.31 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 370mW (Ta), 2.2W (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN0606-3 Package / Case: 3-XFDFN	Package: -	Stock24,144	MOSFET (Metal Oxide)	20 V	800mA (Ta)	1.2V, 4.5V	950mV @ 250µA	0.31 nC @ 4.5 V	21.3 pF @ 10 V	±8V	-	370mW (Ta), 2.2W (Tc)	620mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN0606-3	3-XFDFN
IPDD60R075CFD7XTMA1	Infineon Technologies	MOSFET N-CH 600V 40A HDSOP-10 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4.5V @ 570µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2102 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 266W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-10-1 Package / Case: 10-PowerSOP Module	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	40A (Tc)	-	4.5V @ 570µA	51 nC @ 10 V	2102 pF @ 400 V	±20V	-	266W (Tc)	75mOhm @ 11.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-10-1	10-PowerSOP Module
PSMN1R4-30YLD-1X	Nexperia USA Inc.	MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDP2D9N12C	onsemi	PTNG 120V N-FET TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 686µA Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	120 V	18A (Ta), 210A (Tc)	6V, 10V	4V @ 686µA	109 nC @ 10 V	8894 pF @ 60 V	±20V	-	2.4W (Ta), 333W (Tc)	2.9mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
SIL2305B-TP	Micro Commercial Co	P-CHANNEL MOSFET,SOT23-6L FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5.4A Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2W Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6L Package / Case: SOT-23-6	Package: -	Stock17,910	MOSFET (Metal Oxide)	20 V	5.4A	1.8V, 4.5V	900mV @ 250µA	15 nC @ 4.5 V	740 pF @ 4 V	±10V	-	2W	60mOhm @ 2.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6L	SOT-23-6
TSM60NB099CZ	Taiwan Semiconductor Corporation	600V, 38A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 11.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	38A (Tc)	10V	4V @ 250µA	62 nC @ 10 V	2587 pF @ 100 V	±30V	-	298W (Tc)	99mOhm @ 11.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
RS44CA09TQKA	Renesas Electronics Corporation	MOSFET P-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK090E65Z-S1X	Toshiba Semiconductor and Storage	650V DTMOS VI TO-220 90MOHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.27mA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock333	MOSFET (Metal Oxide)	650 V	30A (Ta)	10V	4V @ 1.27mA	47 nC @ 10 V	2780 pF @ 300 V	±30V	-	230W (Tc)	90mOhm @ 15A, 10V	150°C	Through Hole	TO-220	TO-220-3
MCAC90N06Y-TP	Micro Commercial Co	MOSFET N-CH DFN5060 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 90A Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4692 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	90A	6V, 10V	4V @ 250µA	80 nC @ 10 V	4692 pF @ 30 V	±20V	-	35W	3.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
EPC7007BSH	EPC Space, LLC	GAN FET HEMT 200V 18A 4UB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 100 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-SMD Package / Case: 4-SMD, No Lead	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	18A (Tc)	5V	2.5V @ 3mA	5.4 nC @ 5 V	525 pF @ 100 V	+6V, -4V	-	-	28mOhm @ 18A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD	4-SMD, No Lead
SISS67DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 60A PPAK1212-8S FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 65.8W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S	Package: -	Stock240	MOSFET (Metal Oxide)	30 V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	111 nC @ 10 V	4380 pF @ 15 V	±25V	-	65.8W (Tc)	5.5mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8S	PowerPAK® 1212-8S
DMP21D6UFB4-7B	Diodes Incorporated	MOSFET P-CH 20V 580MA 3DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 580mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 46.1 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 510mW (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 100mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN1006-3 Package / Case: 3-XFDFN	Package: -	Stock28,350	MOSFET (Metal Oxide)	20 V	580mA (Ta)	1.8V, 4.5V	1V @ 250µA	0.8 nC @ 8 V	46.1 pF @ 10 V	±8V	-	510mW (Ta)	1Ohm @ 100mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN1006-3	3-XFDFN
SIHF530STRL-GE3	Vishay Siliconix	MOSFET N-CH 100V 14A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,100	MOSFET (Metal Oxide)	100 V	14A (Tc)	10V	4V @ 250µA	26 nC @ 10 V	670 pF @ 25 V	±20V	-	3.7W (Ta), 88W (Tc)	160mOhm @ 8.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NVMFS6H801NT1G	onsemi	MOSFET N-CH 80V 23A/157A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 166W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	23A (Ta), 157A (Tc)	10V	4V @ 250µA	64 nC @ 10 V	4120 pF @ 40 V	±20V	-	3.8W (Ta), 166W (Tc)	2.8mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads