Page 31 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSS84PW
Infineon Technologies

MOSFET P-CH 60V 150MA SOT-323

Package: SC-70, SOT-323

Stock401,028
IRL8113
Infineon Technologies

MOSFET N-CH 30V 105A TO-220AB

Package: TO-220-3

Stock440,328
IRL3803S
Infineon Technologies

MOSFET N-CH 30V 140A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock224,856
EMH1405-P-TL-H
ON Semiconductor

MOSFET N-CH 30V 8.5A EMH8

Package: 8-SMD, Flat Lead

Stock4,720
2SK3483-AZ
Renesas Electronics America

MOSFET N-CH 100V MP-3/TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,704
FQAF58N08
Fairchild/ON Semiconductor

MOSFET N-CH 80V 44A TO-3PF

Package: SC-94

Stock3,680
IPT60R028G7XTMA1
Infineon Technologies

MOSFET N-CH 650V 75A HSOF-8

Package: 8-PowerSFN

Stock6,544
IXTH140P10T
IXYS

MOSFET P-CH 100V 140A TO-247

Package: TO-247-3

Stock7,696
IXTA160N10T7
IXYS

MOSFET N-CH 100V 160A TO-263-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock4,032
NTMFS4C032NT3G
ON Semiconductor

MOSFET N-CH 30V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock3,696
IRFBC40PBF
Vishay Siliconix

MOSFET N-CH 600V 6.2A TO-220AB

Package: TO-220-3

Stock32,124
IRF840BPBF
Vishay Siliconix

MOSFET N-CH 500V 8.7A TO-220AB

Package: TO-220-3

Stock16,680
AUIRFP064N
Infineon Technologies

MOSFET N-CH 55V 98A TO-247AC

Package: TO-247-3

Stock4,928
SI8461DB-T2-E1
Vishay Siliconix

MOSFET P-CH 20V MICROFOOT

Package: 4-XFBGA, CSPBGA

Stock36,132
STL24NM60N
STMicroelectronics

MOSFET N-CH 600V 16A POWERFLAT

Package: 4-PowerFlat? HV

Stock108,600
APL502J
Microsemi Corporation

MOSFET N-CH 500V 52A SOT-227

Package: SOT-227-4, miniBLOC

Stock6,400
NSF040120L4A0Q
Nexperia USA Inc.

NSF040120L4A0/SOT8071/TO247-4L

Package: -

Request a Quote
FDD24AN06LA0_SB82179
onsemi

MOSFET N-CH 60V 7.1A/40A TO252AA

Package: -

Request a Quote
PJW3N10A_R2_00001
Panjit International Inc.

100V N-CHANNEL ENHANCEMENT MODE

Package: -

Stock26,862
NVHL020N120SC1
onsemi

SICFET N-CH 1200V 103A TO247-3

Package: -

Stock1,050

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSS84PW	Infineon Technologies	MOSFET P-CH 60V 150MA SOT-323 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19.1pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock401,028	MOSFET (Metal Oxide)	60V	150mA (Ta)	4.5V, 10V	2V @ 20µA	1.5nC @ 10V	19.1pF @ 25V	±20V	-	300mW (Ta)	8 Ohm @ 150mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT323-3	SC-70, SOT-323
IRL8113	Infineon Technologies	MOSFET N-CH 30V 105A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock440,328	MOSFET (Metal Oxide)	30V	105A (Tc)	4.5V, 10V	2.25V @ 250µA	35nC @ 4.5V	2840pF @ 15V	±20V	-	110W (Tc)	6 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRL3803S	Infineon Technologies	MOSFET N-CH 30V 140A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 71A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock224,856	MOSFET (Metal Oxide)	30V	140A (Tc)	4.5V, 10V	1V @ 250µA	140nC @ 4.5V	5000pF @ 25V	±16V	-	3.8W (Ta), 200W (Tc)	6 mOhm @ 71A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
EMH1405-P-TL-H	ON Semiconductor	MOSFET N-CH 30V 8.5A EMH8 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-EMH Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock4,720	-	-	-	-	-	-	-	-	-	-	-	150°C (TJ)	Surface Mount	8-EMH	8-SMD, Flat Lead
2SK3483-AZ	Renesas Electronics America	MOSFET N-CH 100V MP-3/TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 14A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (MP-3) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,704	MOSFET (Metal Oxide)	100V	28A (Ta)	4.5V, 10V	-	49nC @ 10V	2300pF @ 10V	±20V	-	1W (Ta), 40W (Tc)	52 mOhm @ 14A, 10V	150°C (TJ)	Through Hole	TO-251 (MP-3)	TO-251-3 Short Leads, IPak, TO-251AA
FQAF58N08	Fairchild/ON Semiconductor	MOSFET N-CH 80V 44A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock3,680	MOSFET (Metal Oxide)	80V	44A (Tc)	10V	4V @ 250µA	65nC @ 10V	1900pF @ 25V	±25V	-	85W (Tc)	24 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3PF	SC-94
IPT60R028G7XTMA1	Infineon Technologies	MOSFET N-CH 650V 75A HSOF-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.44mA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4820pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 391W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 28.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8 Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock6,544	MOSFET (Metal Oxide)	650V	75A (Tc)	10V	4V @ 1.44mA	123nC @ 10V	4820pF @ 400V	±20V	-	391W (Tc)	28 mOhm @ 28.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8	8-PowerSFN
IXTH140P10T	IXYS	MOSFET P-CH 100V 140A TO-247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 31400pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 568W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock7,696	MOSFET (Metal Oxide)	100V	140A (Tc)	10V	4V @ 250µA	400nC @ 10V	31400pF @ 25V	±15V	-	568W (Tc)	12 mOhm @ 70A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTA160N10T7	IXYS	MOSFET N-CH 100V 160A TO-263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 430W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 (IXTA..7) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock4,032	MOSFET (Metal Oxide)	100V	160A (Tc)	10V	4.5V @ 1mA	132nC @ 10V	6600pF @ 25V	±30V	-	430W (Tc)	7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7 (IXTA..7)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
NTMFS4C032NT3G	ON Semiconductor	MOSFET N-CH 30V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.46W (Ta), 21.6W (Tc) Rds On (Max) @ Id, Vgs: 7.35 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock3,696	MOSFET (Metal Oxide)	30V	13A (Ta), 38A (Tc)	4.5V, 10V	2.1V @ 250µA	15.2nC @ 10V	770pF @ 15V	±20V	-	2.46W (Ta), 21.6W (Tc)	7.35 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
IRFBC40PBF	Vishay Siliconix	MOSFET N-CH 600V 6.2A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock32,124	MOSFET (Metal Oxide)	600V	6.2A (Tc)	10V	4V @ 250µA	60nC @ 10V	1300pF @ 25V	±20V	-	125W (Tc)	1.2 Ohm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF840BPBF	Vishay Siliconix	MOSFET N-CH 500V 8.7A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock16,680	MOSFET (Metal Oxide)	500V	8.7A (Tc)	10V	5V @ 250µA	30nC @ 10V	527pF @ 100V	±30V	-	156W (Tc)	850 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
AUIRFP064N	Infineon Technologies	MOSFET N-CH 55V 98A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 59A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock4,928	MOSFET (Metal Oxide)	55V	110A (Tc)	10V	4V @ 250µA	170nC @ 10V	4000pF @ 25V	±20V	-	200W (Tc)	8 mOhm @ 59A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
SI8461DB-T2-E1	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	Package: 4-XFBGA, CSPBGA	Stock36,132	MOSFET (Metal Oxide)	20V	-	1.5V, 4.5V	1V @ 250µA	24nC @ 8V	610pF @ 10V	±8V	-	780mW (Ta), 1.8W (Tc)	100 mOhm @ 1.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-Microfoot	4-XFBGA, CSPBGA
STL24NM60N	STMicroelectronics	MOSFET N-CH 600V 16A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 215 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 4-PowerFlat? HV	Package: 4-PowerFlat? HV	Stock108,600	MOSFET (Metal Oxide)	600V	3.3A (Ta), 16A (Tc)	10V	5V @ 250µA	46nC @ 10V	1400pF @ 50V	±25V	-	3W (Ta), 125W (Tc)	215 mOhm @ 8A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	4-PowerFlat? HV
APL502J	Microsemi Corporation	MOSFET N-CH 500V 52A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 52A Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 568W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 26A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,400	MOSFET (Metal Oxide)	500V	52A	15V	4V @ 2.5mA	-	9000pF @ 25V	±30V	-	568W (Tc)	90 mOhm @ 26A, 12V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
NSF040120L4A0Q	Nexperia USA Inc.	NSF040120L4A0/SOT8071/TO247-4L FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 65A (Tj) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 2.9V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V Vgs (Max): +22V, -10V FET Feature: - Power Dissipation (Max): 306W (Tj) Rds On (Max) @ Id, Vgs: 60mOhm @ 40A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-4	Package: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1200 V	65A (Tj)	15V, 18V	2.9V @ 4mA	95 nC @ 15 V	2600 pF @ 800 V	+22V, -10V	-	306W (Tj)	60mOhm @ 40A, 15V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-4
FDD24AN06LA0_SB82179	onsemi	MOSFET N-CH 60V 7.1A/40A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	7.1A (Ta), 40A (Tc)	5V, 10V	2V @ 250µA	21 nC @ 5 V	1850 pF @ 25 V	±20V	-	75W (Tc)	19mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
PJW3N10A_R2_00001	Panjit International Inc.	100V N-CHANNEL ENHANCEMENT MODE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Stock26,862	MOSFET (Metal Oxide)	100 V	2.2A (Ta)	4.5V, 10V	2.5V @ 250µA	9.1 nC @ 10 V	508 pF @ 30 V	±20V	-	3.1W (Ta)	310mOhm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
NVHL020N120SC1	onsemi	SICFET N-CH 1200V 103A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4.3V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 800 V Vgs (Max): +25V, -15V FET Feature: - Power Dissipation (Max): 535W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock1,050	SiCFET (Silicon Carbide)	1200 V	103A (Tc)	20V	4.3V @ 20mA	203 nC @ 20 V	2890 pF @ 800 V	+25V, -15V	-	535W (Tc)	28mOhm @ 60A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
GT065P06D5	Goford Semiconductor	MOSFET P-CH 60V 103A DFN5*6-8L FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5326 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 178W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (4.9x5.75) Package / Case: 8-PowerTDFN	Package: -	Stock11,760	MOSFET (Metal Oxide)	60 V	103A (Tc)	4.5V, 10V	2.5V @ 250µA	62 nC @ 10 V	5326 pF @ 30 V	±20V	-	178W (Tc)	7mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (4.9x5.75)	8-PowerTDFN
RTR025P02HZGTL	Rohm Semiconductor	MOSFET P-CH 20V 2.5A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: -	Stock31,410	MOSFET (Metal Oxide)	20 V	2.5A (Ta)	2.5V, 4.5V	2V @ 1mA	7 nC @ 4.5 V	630 pF @ 10 V	±12V	-	700mW (Ta)	95mOhm @ 2.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
DI040N03PT-AQ	Diotec Semiconductor	MOSFET, POWERQFN 3X3, 30V, 40A, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (3x3) Package / Case: 8-PowerVDFN	Package: -	Stock15,000	MOSFET (Metal Oxide)	30 V	40A (Tc)	4.5V, 10V	2.5V @ 250µA	12 nC @ 4.5 V	1120 pF @ 15 V	±20V	-	25W (Tc)	7mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (3x3)	8-PowerVDFN
2SK1567-E	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVHL025N065SC1	onsemi	SIC MOS TO247-3L 650V FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 99A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 4.3V @ 15.5mA Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V Vgs (Max): +22V, -8V FET Feature: - Power Dissipation (Max): 348W (Tc) Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	650 V	99A (Tc)	15V, 18V	4.3V @ 15.5mA	164 nC @ 18 V	3480 pF @ 325 V	+22V, -8V	-	348W (Tc)	28.5mOhm @ 45A, 18V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
NVMFS5C466NLT1G	onsemi	MOSFET N-CH 40V 16A/52A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock4,200	MOSFET (Metal Oxide)	40 V	16A (Ta), 52A (Tc)	4.5V, 10V	2.2V @ 30µA	16 nC @ 10 V	860 pF @ 25 V	±20V	-	3.5W (Ta), 37W (Tc)	7.3mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
PJA3405-AU_R1_000A1	Panjit International Inc.	SOT-23, MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 417 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock433,332	MOSFET (Metal Oxide)	30 V	3.6A (Ta)	4.5V, 10V	2.1V @ 250µA	10 nC @ 10 V	417 pF @ 15 V	±20V	-	1.25W (Ta)	73mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
TK040Z65Z-S1F	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 57A TO247-4L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 57A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.85mA Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-247-4L(T) Package / Case: TO-247-4	Package: -	Stock66	MOSFET (Metal Oxide)	650 V	57A (Ta)	10V	4V @ 2.85mA	105 nC @ 10 V	6250 pF @ 300 V	±30V	-	360W (Tc)	40mOhm @ 28.5A, 10V	150°C	Through Hole	TO-247-4L(T)	TO-247-4