Page 33 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUXS20956S
Infineon Technologies

MOSFET N-CH 16SOIC

Package: -

Stock6,832
IRF6614
Infineon Technologies

MOSFET N-CH 40V DIRECTFET-ST

Package: DirectFET? Isometric ST

Stock7,744
AOD403_030
Alpha & Omega Semiconductor Inc.

MOSFET P-CH TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,640
SIE830DF-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 50A POLARPAK

Package: 10-PolarPAK? (S)

Stock4,272
DMP3025LK3-13
Diodes Incorporated

MOSFET P-CH 30V 10.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock145,056
NTLJD3182FZTBG
ON Semiconductor

MOSFET P-CH 20V 2.2A 6-WDFN

Package: 6-WDFN Exposed Pad

Stock5,968
FDP8441_F085
Fairchild/ON Semiconductor

MOSFET N-CH 40V 80A TO-220AB

Package: TO-220-3

Stock390,000
SI3853DV-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 1.6A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock180,588
NTB60N06LT4
ON Semiconductor

MOSFET N-CH 60V 60A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,616
IPI65R420CFDXKSA1
Infineon Technologies

MOSFET N-CH 650V 8.7A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,544
IXFK48N50Q
IXYS

MOSFET N-CH 500V 48A TO-264

Package: TO-264-3, TO-264AA

Stock7,312
FDD7N60NZTM
Fairchild/ON Semiconductor

MOSFET N-CH 600V 5.5A DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,352
RXH125N03TB1
Rohm Semiconductor

MOSFET N-CH 30V 12.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,928
DMG302PU-13
Diodes Incorporated

MOSFET P-CH 25V .17A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock5,088
STF15NM60ND
STMicroelectronics

MOSFET N-CH 600V 14A TO-220FP

Package: TO-220-3 Full Pack

Stock401,148
STF140N8F7
STMicroelectronics

MOSFET N-CH 80V 64A TO220FP

Package: TO-220-3 Full Pack

Stock4,304
STD8N60DM2
STMicroelectronics

N-CHANNEL 600 V, 0.26 OHM TYP.,

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,176
IRFI1010NPBF
Infineon Technologies

MOSFET N-CH 55V 49A TO220FP

Package: TO-220-3 Full Pack

Stock7,040
R6020ANZC8
Rohm Semiconductor

MOSFET N-CH 600V 20A TO3PF

Package: TO-3P-3 Full Pack

Stock7,888
FDS8690
Fairchild/ON Semiconductor

MOSFET N-CH 30V 14A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock785,088

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUXS20956S	Infineon Technologies	MOSFET N-CH 16SOIC FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,832	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF6614	Infineon Technologies	MOSFET N-CH 40V DIRECTFET-ST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 12.7A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? ST Package / Case: DirectFET? Isometric ST	Package: DirectFET? Isometric ST	Stock7,744	MOSFET (Metal Oxide)	40V	12.7A (Ta), 55A (Tc)	4.5V, 10V	2.25V @ 250µA	29nC @ 4.5V	2560pF @ 20V	±20V	-	2.1W (Ta), 42W (Tc)	8.3 mOhm @ 12.7A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? ST	DirectFET? Isometric ST
AOD403_030	Alpha & Omega Semiconductor Inc.	MOSFET P-CH TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 20V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 20A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,640	MOSFET (Metal Oxide)	30V	15A (Ta), 70A (Tc)	10V, 20V	3.5V @ 250µA	61nC @ 10V	3500pF @ 15V	±25V	-	2.5W (Ta), 90W (Tc)	6.2 mOhm @ 20A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
SIE830DF-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 50A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (S) Package / Case: 10-PolarPAK? (S)	Package: 10-PolarPAK? (S)	Stock4,272	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2V @ 250µA	115nC @ 10V	5500pF @ 15V	±12V	-	5.2W (Ta), 104W (Tc)	4.2 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (S)	10-PolarPAK? (S)
DMP3025LK3-13	Diodes Incorporated	MOSFET P-CH 30V 10.6A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1678pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.15W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock145,056	MOSFET (Metal Oxide)	30V	10.6A (Ta)	4.5V, 10V	3V @ 250µA	31.6nC @ 10V	1678pF @ 15V	±20V	-	2.15W (Ta)	25 mOhm @ 7.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
NTLJD3182FZTBG	ON Semiconductor	MOSFET P-CH 20V 2.2A 6-WDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 710mW (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WDFN (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock5,968	MOSFET (Metal Oxide)	20V	2.2A (Ta)	1.8V, 4.5V	1V @ 250µA	7.8nC @ 4.5V	450pF @ 10V	±8V	Schottky Diode (Isolated)	710mW (Ta)	100 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN (2x2)	6-WDFN Exposed Pad
FDP8441_F085	Fairchild/ON Semiconductor	MOSFET N-CH 40V 80A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,000	MOSFET (Metal Oxide)	40V	23A (Ta), 80A (Tc)	10V	4V @ 250µA	280nC @ 10V	15000pF @ 25V	±20V	-	300W (Tc)	2.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SI3853DV-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 1.6A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 500mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock180,588	MOSFET (Metal Oxide)	20V	1.6A (Ta)	2.5V, 4.5V	500mV @ 250µA (Min)	4nC @ 4.5V	-	±12V	Schottky Diode (Isolated)	830mW (Ta)	200 mOhm @ 1.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
NTB60N06LT4	ON Semiconductor	MOSFET N-CH 60V 60A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3075pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,616	MOSFET (Metal Oxide)	60V	60A (Ta)	5V	2V @ 250µA	65nC @ 5V	3075pF @ 25V	±15V	-	2.4W (Ta), 150W (Tj)	16 mOhm @ 30A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPI65R420CFDXKSA1	Infineon Technologies	MOSFET N-CH 650V 8.7A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83.3W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,544	MOSFET (Metal Oxide)	650V	8.7A (Tc)	10V	4.5V @ 340µA	32nC @ 10V	870pF @ 100V	±20V	-	83.3W (Tc)	420 mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IXFK48N50Q	IXYS	MOSFET N-CH 500V 48A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,312	MOSFET (Metal Oxide)	500V	48A (Tc)	10V	4V @ 4mA	190nC @ 10V	7000pF @ 25V	±20V	-	500W (Tc)	100 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
FDD7N60NZTM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 5.5A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 2.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,352	MOSFET (Metal Oxide)	600V	5.5A (Tc)	10V	5V @ 250µA	17nC @ 10V	730pF @ 25V	±25V	-	90W (Tc)	1.25 Ohm @ 2.75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
RXH125N03TB1	Rohm Semiconductor	MOSFET N-CH 30V 12.5A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,928	MOSFET (Metal Oxide)	30V	12.5A (Ta)	4V, 10V	2.5V @ 1mA	12.7nC @ 5V	1000pF @ 10V	±20V	-	2W (Ta)	12 mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
DMG302PU-13	Diodes Incorporated	MOSFET P-CH 25V .17A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 27.2pF @ 10V Vgs (Max): 8V FET Feature: - Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock5,088	MOSFET (Metal Oxide)	25V	170mA (Ta)	2.7V, 4.5V	1.5V @ 250µA	0.35nC @ 4.5V	27.2pF @ 10V	8V	-	320mW (Ta)	10 Ohm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
STF15NM60ND	STMicroelectronics	MOSFET N-CH 600V 14A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock401,148	MOSFET (Metal Oxide)	600V	14A (Tc)	10V	5V @ 250µA	40nC @ 10V	1250pF @ 50V	±25V	-	30W (Tc)	299 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF140N8F7	STMicroelectronics	MOSFET N-CH 80V 64A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6340pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,304	MOSFET (Metal Oxide)	80V	64A (Tc)	10V	4.5V @ 250µA	96nC @ 10V	6340pF @ 40V	±20V	-	35W (Tc)	4.3 mOhm @ 32A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STD8N60DM2	STMicroelectronics	N-CHANNEL 600 V, 0.26 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,176	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	5V @ 100µA	13.5nC @ 10V	375pF @ 100V	±30V	-	85W (Tc)	600 mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFI1010NPBF	Infineon Technologies	MOSFET N-CH 55V 49A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,040	MOSFET (Metal Oxide)	55V	49A (Tc)	10V	4V @ 250µA	130nC @ 10V	2900pF @ 25V	±20V	-	58W (Tc)	12 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
R6020ANZC8	Rohm Semiconductor	MOSFET N-CH 600V 20A TO3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock7,888	MOSFET (Metal Oxide)	600V	20A (Ta)	10V	4.15V @ 1mA	65nC @ 10V	2040pF @ 25V	±30V	-	120W (Tc)	220 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
FDS8690	Fairchild/ON Semiconductor	MOSFET N-CH 30V 14A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock785,088	MOSFET (Metal Oxide)	30V	14A (Ta)	4.5V, 10V	3V @ 250µA	27nC @ 10V	1680pF @ 15V	±20V	-	2.5W (Ta)	7.6 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFR120ZTRPBF	Infineon Technologies	MOSFET N-CH 100V 8.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 5.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock180,780	MOSFET (Metal Oxide)	100V	8.7A (Tc)	10V	4V @ 250µA	10nC @ 10V	310pF @ 25V	±20V	-	35W (Tc)	190 mOhm @ 5.2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
AOT2618L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 7A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 41.5W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock14,748	MOSFET (Metal Oxide)	60V	7A (Ta), 23A (Tc)	4.5V, 10V	2.5V @ 250µA	20nC @ 10V	950pF @ 30V	±20V	-	2.1W (Ta), 41.5W (Tc)	19 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
NTE2935	NTE Electronics, Inc	MOSFET N-CH 500V 6.2A TO3PML FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PML Package / Case: TO-3P-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	6.2A (Tc)	10V	4V @ 250µA	74 nC @ 10 V	1550 pF @ 25 V	±30V	-	85W (Tc)	850mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PML	TO-3P-3 Full Pack
2SK1657-T1B-A	Renesas Electronics Corporation	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK380A65Y-S4X	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 360µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: -	Stock285	MOSFET (Metal Oxide)	650 V	9.7A (Tc)	10V	4V @ 360µA	20 nC @ 10 V	590 pF @ 300 V	±30V	-	30W (Tc)	380mOhm @ 4.9A, 10V	150°C	Through Hole	TO-220SIS	TO-220-3 Full Pack
2SJ243-T1-A	Renesas Electronics Corporation	MOSFET P-CH 30V 100MA SC75-3 USM FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.3V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 16 pF @ 5 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 25Ohm @ 10mA, 4V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SC-75-3, USM Package / Case: SC-75, SOT-416	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	100mA (Ta)	-	2.3V @ 10µA	-	16 pF @ 5 V	-	-	-	25Ohm @ 10mA, 4V	-	Surface Mount	SC-75-3, USM	SC-75, SOT-416
RF1S25N06SM9A	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC3710D	Infineon Technologies	MOSFET 100V 57A DIE FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 57A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 23mOhm @ 57A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	57A	10V	-	-	-	-	-	-	23mOhm @ 57A, 10V	-	Surface Mount	Die	Die