Page 34 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7604TRPBF
Infineon Technologies

MOSFET P-CH 20V 3.6A MICRO8

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock20,160
SPP11N60CFDXKSA1
Infineon Technologies

MOSFET N-CH 650V 11A TO-220

Package: TO-220-3

Stock2,880
IRFR2405TRL
Infineon Technologies

MOSFET N-CH 55V 56A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,200
IRF1104L
Infineon Technologies

MOSFET N-CH 40V 100A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,048
AO4568
Alpha & Omega Semiconductor Inc.

MOSFET N-CH

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,864
SI7358ADP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 14A PPAK SO-8

Package: PowerPAK? SO-8

Stock5,008
SI4448DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 12V 50A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,888
SIB414DK-T1-GE3
Vishay Siliconix

MOSFET N-CH 8V 9A PPAK SC75-6

Package: PowerPAK? SC-75-6L

Stock5,536
FQAF33N10L
Fairchild/ON Semiconductor

MOSFET N-CH 100V 25.8A TO-3PF

Package: SC-94

Stock8,532
ZVN3320ASTOB
Diodes Incorporated

MOSFET N-CH 200V 0.1A TO92-3

Package: E-Line-3

Stock6,608
IPB180P04P403ATMA1
Infineon Technologies

MOSFET P-CH TO263-7

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock2,032
NVMFS5C404NT3G
ON Semiconductor

MOSFET N-CH 40V 49A SO8FL

Package: 8-PowerTDFN

Stock3,232
NVTFS4C08NWFTWG
ON Semiconductor

MOSFET N-CH 30V 55A U8FL

Package: 8-PowerWDFN

Stock3,600
IRF640NLPBF
Infineon Technologies

MOSFET N-CH 200V 18A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock119,664
AON7462
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 300V 0.9A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock47,208
R6008ANX
Rohm Semiconductor

MOSFET N-CH 600V 8A TO-220FM

Package: TO-220-2 Full Pack

Stock15,552
SI7322DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 18A 1212-8

Package: PowerPAK? 1212-8

Stock4,896
FSS173-TL-E
onsemi

PCH 4V DRIVE SERIES

Package: -

Request a Quote
BSC021N08NS5ATMA1
Infineon Technologies

MOSFET TRENCH 80V TSON-8

Package: -

Stock7,641
DMNH6011LK3-13
Diodes Incorporated

MOSFET N-CH 55V 80A TO252 T&R

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7604TRPBF	Infineon Technologies	MOSFET P-CH 20V 3.6A MICRO8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8? Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock20,160	MOSFET (Metal Oxide)	20V	3.6A (Ta)	2.7V, 4.5V	700mV @ 250µA	20nC @ 4.5V	590pF @ 15V	±12V	-	1.8W (Ta)	90 mOhm @ 2.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Micro8?	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
SPP11N60CFDXKSA1	Infineon Technologies	MOSFET N-CH 650V 11A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 440 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock2,880	MOSFET (Metal Oxide)	650V	11A (Tc)	10V	5V @ 500µA	64nC @ 10V	1200pF @ 25V	±20V	-	125W (Tc)	440 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IRFR2405TRL	Infineon Technologies	MOSFET N-CH 55V 56A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2430pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,200	MOSFET (Metal Oxide)	55V	56A (Tc)	10V	4V @ 250µA	110nC @ 10V	2430pF @ 25V	±20V	-	110W (Tc)	16 mOhm @ 34A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF1104L	Infineon Technologies	MOSFET N-CH 40V 100A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,048	MOSFET (Metal Oxide)	40V	100A (Tc)	10V	4V @ 250µA	93nC @ 10V	2900pF @ 25V	±20V	-	2.4W (Ta), 170W (Tc)	9 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
AO4568	Alpha & Omega Semiconductor Inc.	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,864	MOSFET (Metal Oxide)	30V	12A (Ta)	4.5V, 10V	2.2V @ 250µA	15nC @ 10V	600pF @ 15V	±20V	-	2.5W (Ta)	11.5 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SI7358ADP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 14A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock5,008	MOSFET (Metal Oxide)	30V	14A (Ta)	4.5V, 10V	3V @ 250µA	40nC @ 4.5V	4650pF @ 15V	±20V	-	1.9W (Ta)	4.2 mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI4448DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 12V 50A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 12350pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 20A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,888	MOSFET (Metal Oxide)	12V	50A (Tc)	1.8V, 4.5V	1V @ 250µA	150nC @ 4.5V	12350pF @ 6V	±8V	-	3.5W (Ta), 7.8W (Tc)	1.7 mOhm @ 20A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SIB414DK-T1-GE3	Vishay Siliconix	MOSFET N-CH 8V 9A PPAK SC75-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.03nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 732pF @ 4V Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 7.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-75-6L Single Package / Case: PowerPAK? SC-75-6L	Package: PowerPAK? SC-75-6L	Stock5,536	MOSFET (Metal Oxide)	8V	9A (Tc)	1.2V, 4.5V	1V @ 250µA	14.03nC @ 5V	732pF @ 4V	±5V	-	2.4W (Ta), 13W (Tc)	26 mOhm @ 7.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-75-6L Single	PowerPAK? SC-75-6L
FQAF33N10L	Fairchild/ON Semiconductor	MOSFET N-CH 100V 25.8A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 12.9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock8,532	MOSFET (Metal Oxide)	100V	25.8A (Tc)	5V, 10V	2V @ 250µA	40nC @ 5V	1630pF @ 25V	±20V	-	83W (Tc)	52 mOhm @ 12.9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3PF	SC-94
ZVN3320ASTOB	Diodes Incorporated	MOSFET N-CH 200V 0.1A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock6,608	MOSFET (Metal Oxide)	200V	100mA (Ta)	10V	3V @ 1mA	-	45pF @ 25V	±20V	-	625mW (Ta)	25 Ohm @ 100mA, 10V	-	Through Hole	E-Line (TO-92 compatible)	E-Line-3
IPB180P04P403ATMA1	Infineon Technologies	MOSFET P-CH TO263-7 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 410µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 17640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock2,032	MOSFET (Metal Oxide)	40V	180A (Tc)	10V	4V @ 410µA	250nC @ 10V	17640pF @ 25V	±20V	-	150W (Tc)	2.8 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D2Pak (6 Leads + Tab)
NVMFS5C404NT3G	ON Semiconductor	MOSFET N-CH 40V 49A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,232	MOSFET (Metal Oxide)	40V	53A (Ta), 378A (Tc)	10V	4V @ 250µA	128nC @ 10V	8400pF @ 25V	±20V	-	3.9W (Ta), 200W (Tc)	0.7 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVTFS4C08NWFTWG	ON Semiconductor	MOSFET N-CH 30V 55A U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1113pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,600	MOSFET (Metal Oxide)	30V	17A (Ta)	4.5V, 10V	2.2V @ 250µA	18.2nC @ 10V	1113pF @ 15V	±20V	-	3.1W (Ta), 31W (Tc)	5.9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
IRF640NLPBF	Infineon Technologies	MOSFET N-CH 200V 18A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock119,664	MOSFET (Metal Oxide)	200V	18A (Tc)	10V	4V @ 250µA	67nC @ 10V	1160pF @ 25V	±20V	-	150W (Tc)	150 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
AON7462	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 300V 0.9A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 900mA, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3x3) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock47,208	MOSFET (Metal Oxide)	300V	900mA (Ta), 2.5A (Tc)	10V	4.5V @ 250µA	5.6nC @ 10V	240pF @ 25V	±30V	-	3.1W (Ta), 25W (Tc)	1.5 Ohm @ 900mA, 10V	-50°C ~ 150°C (TJ)	Surface Mount	8-DFN (3x3)	8-PowerSMD, Flat Leads
R6008ANX	Rohm Semiconductor	MOSFET N-CH 600V 8A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock15,552	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	4.5V @ 1mA	21nC @ 10V	680pF @ 25V	±30V	-	50W (Tc)	800 mOhm @ 4A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
SI7322DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 18A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 58 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock4,896	MOSFET (Metal Oxide)	100V	18A (Tc)	10V	4.4V @ 250µA	20nC @ 10V	750pF @ 50V	±20V	-	3.8W (Ta), 52W (Tc)	58 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
FSS173-TL-E	onsemi	PCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC021N08NS5ATMA1	Infineon Technologies	MOSFET TRENCH 80V TSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 146µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-3 Package / Case: 8-PowerTDFN	Package: -	Stock7,641	MOSFET (Metal Oxide)	80 V	100A (Tc)	6V, 10V	3.8V @ 146µA	29 nC @ 10 V	8600 pF @ 40 V	±20V	-	214W (Tc)	2.1mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSON-8-3	8-PowerTDFN
DMNH6011LK3-13	Diodes Incorporated	MOSFET N-CH 55V 80A TO252 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3077 pF @ 30 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	80A (Tc)	4.5V, 10V	2V @ 250µA	49.1 nC @ 10 V	3077 pF @ 30 V	±12V	-	1.6W (Ta)	12mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
AONS36306	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 28A/63A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: -	Stock20,880	MOSFET (Metal Oxide)	30 V	28A (Ta), 63A (Tc)	-	2.2V @ 250µA	30 nC @ 10 V	1000 pF @ 15 V	±20V	-	6.2W (Ta), 31W (Tc)	5.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
SIHFBE30S-GE3	Vishay Siliconix	MOSFET N-CHANNEL 800V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,970	MOSFET (Metal Oxide)	800 V	4.1A (Tc)	10V	4V @ 250µA	78 nC @ 10 V	1300 pF @ 25 V	±20V	-	125W (Tc)	3Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SQM25N15-52_GE3	Vishay Siliconix	MOSFET N-CH 150V 25A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	25A (Tc)	10V	4V @ 250µA	51 nC @ 10 V	2360 pF @ 25 V	±20V	-	107W (Tc)	52mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TSM090N03CP	Taiwan Semiconductor Corporation	30V, 50A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	55A (Tc)	4.5V, 10V	2.5V @ 250µA	7.5 nC @ 4.5 V	750 pF @ 25 V	±20V	-	40W (Tc)	9mOhm @ 16A, 10V	150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
DIT050N06	Diotec Semiconductor	MOSFET TO220AB N 60V 0.014OHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock2,982	MOSFET (Metal Oxide)	60 V	50A (Tc)	10V	2.5V @ 250µA	50 nC @ 10 V	2050 pF @ 30 V	±20V	-	85W (Tc)	20mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPP60R360CFD7XKSA1	Infineon Technologies	MOSFET 600V TO220-3-1 FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	-	-	-	-	-	±20V	-	-	-	-	Through Hole	PG-TO220-3-1	TO-220-3
RJK03E1DNS-00-J5	Renesas Electronics Corporation	POWER FIELD-EFFECT TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HWSON (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	25A (Ta)	-	-	10.7 nC @ 4.5 V	2300 pF @ 10 V	-	-	15W (Tc)	6.9mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	8-HWSON (3.3x3.3)	8-PowerWDFN
SISS26DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 60A PPAK1212-8S FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S	Package: -	Stock41,427	MOSFET (Metal Oxide)	60 V	60A (Tc)	6V, 10V	3.6V @ 250µA	37 nC @ 10 V	1710 pF @ 30 V	±20V	-	57W (Tc)	4.5mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8S	PowerPAK® 1212-8S