Page 38 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSS169L6906HTSA1
Infineon Technologies

MOSFET N-CH 100V 170MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock3,936
IRF1010EZL
Infineon Technologies

MOSFET N-CH 60V 75A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock18,888
IRL3715ZCS
Infineon Technologies

MOSFET N-CH 20V 50A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock528,000
AOD504
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 25V 18A

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock149,292
PHP45NQ10TA,127
NXP

MOSFET N-CH 100V 47A TO220AB

Package: TO-220-3

Stock7,968
BUK753R4-30B,127
NXP

MOSFET N-CH 30V 75A TO220AB

Package: TO-220-3

Stock6,112
SI1300BDL-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 400MA SOT323-3

Package: SC-70, SOT-323

Stock191,880
STW60NE10
STMicroelectronics

MOSFET N-CH 100V 60A TO-247

Package: TO-247-3

Stock28,848
IPD65R660CFDATMA1
Infineon Technologies

MOSFET N-CH 650V 6A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,616
EPC8008ENGR
EPC

TRANS GAN 40V 2.7A BUMPED DIE

Package: Die

Stock5,568
IXTA1R6N100D2
IXYS

MOSFET N-CH 1000V 1.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,320
DMP3007SCG-7
Diodes Incorporated

MOSFET BVDSS: 25V 30V V-DFN3333-

Package: 8-PowerVDFN

Stock7,024
SI8809EDB-T2-E1
Vishay Siliconix

MOSFET P-CH 20V 1.9A MICROFOOT

Package: 4-XFBGA

Stock4,192
STD70NS04ZL
STMicroelectronics

MOSFET N-CH 33V 70A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock630,012
CSD19534Q5AT
Texas Instruments

MOSFET N-CH 100V 50 8SON

Package: 8-PowerTDFN

Stock6,400
STP10NM60N
STMicroelectronics

MOSFET N-CH 600V 10A TO220

Package: TO-220-3

Stock8,856
FDPF12N50NZ
Fairchild/ON Semiconductor

MOSFET N-CH 500V TO-220FP

Package: TO-220-3 Full Pack

Stock392,304
FDB3672_F085
Fairchild/ON Semiconductor

MOSFET N-CH 100V 44A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,000
BUK7M33-60EX
Nexperia USA Inc.

MOSFET N-CH 60V MLFPAK

Package: SOT-1210, 8-LFPAK33 (5-Lead)

Stock12,192
BSC014N03MS G
Infineon Technologies

MOSFET N-CH 30V 100A TDSON-8

Package: 8-PowerTDFN

Stock37,152

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSS169L6906HTSA1	Infineon Technologies	MOSFET N-CH 100V 170MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs(th) (Max) @ Id: 1.8V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 7V Input Capacitance (Ciss) (Max) @ Vds: 68pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,936	MOSFET (Metal Oxide)	100V	170mA (Ta)	0V, 10V	1.8V @ 50µA	2.8nC @ 7V	68pF @ 25V	±20V	Depletion Mode	360mW (Ta)	6 Ohm @ 170mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
IRF1010EZL	Infineon Technologies	MOSFET N-CH 60V 75A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 51A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock18,888	MOSFET (Metal Oxide)	60V	75A (Tc)	10V	4V @ 100µA	86nC @ 10V	2810pF @ 25V	±20V	-	140W (Tc)	8.5 mOhm @ 51A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRL3715ZCS	Infineon Technologies	MOSFET N-CH 20V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock528,000	MOSFET (Metal Oxide)	20V	50A (Tc)	4.5V, 10V	2.55V @ 250µA	11nC @ 4.5V	870pF @ 10V	±20V	-	45W (Tc)	11 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AOD504	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 25V 18A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock149,292	MOSFET (Metal Oxide)	25V	18A (Ta), 46A (Tc)	4.5V, 10V	2.4V @ 250µA	33nC @ 10V	1333pF @ 15V	±20V	-	2.5W (Ta), 50W (Tc)	5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
PHP45NQ10TA,127	NXP	MOSFET N-CH 100V 47A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,968	MOSFET (Metal Oxide)	100V	47A (Tc)	-	4V @ 1mA	61nC @ 10V	2600pF @ 25V	-	-	-	25 mOhm @ 25A, 10V	-	Through Hole	TO-220AB	TO-220-3
BUK753R4-30B,127	NXP	MOSFET N-CH 30V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4951pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,112	MOSFET (Metal Oxide)	30V	75A (Tc)	10V	4V @ 1mA	75nC @ 10V	4951pF @ 25V	±20V	-	255W (Tc)	3.4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SI1300BDL-T1-E3	Vishay Siliconix	MOSFET N-CH 20V 400MA SOT323-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.84nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 190mW (Ta), 200mW (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 250mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock191,880	MOSFET (Metal Oxide)	20V	400mA (Tc)	2.5V, 4.5V	1V @ 250µA	0.84nC @ 4.5V	35pF @ 10V	±8V	-	190mW (Ta), 200mW (Tc)	850 mOhm @ 250mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3	SC-70, SOT-323
STW60NE10	STMicroelectronics	MOSFET N-CH 100V 60A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 30A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock28,848	MOSFET (Metal Oxide)	100V	60A (Tc)	10V	4V @ 250µA	185nC @ 10V	5300pF @ 25V	±20V	-	180W (Tc)	22 mOhm @ 30A, 10V	175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IPD65R660CFDATMA1	Infineon Technologies	MOSFET N-CH 650V 6A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 660 mOhm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,616	MOSFET (Metal Oxide)	650V	6A (Tc)	10V	4.5V @ 200µA	22nC @ 10V	615pF @ 100V	±20V	-	62.5W (Tc)	660 mOhm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
EPC8008ENGR	EPC	TRANS GAN 40V 2.7A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 20V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 325 mOhm @ 500mA, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: Die	Stock5,568	GaNFET (Gallium Nitride)	40V	2.7A (Ta)	5V	2.5V @ 250µA	0.18nC @ 5V	25pF @ 20V	+6V, -5V	-	-	325 mOhm @ 500mA, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
IXTA1R6N100D2	IXYS	MOSFET N-CH 1000V 1.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 10 Ohm @ 800mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,320	MOSFET (Metal Oxide)	1000V	1.6A (Tc)	10V	-	27nC @ 5V	645pF @ 25V	±20V	Depletion Mode	100W (Tc)	10 Ohm @ 800mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMP3007SCG-7	Diodes Incorporated	MOSFET BVDSS: 25V 30V V-DFN3333- FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: V-DFN3333-8 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock7,024	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	3V @ 250µA	64.2nC @ 10V	2826pF @ 15V	±25V	-	2.4W (Ta)	6.8 mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	V-DFN3333-8	8-PowerVDFN
SI8809EDB-T2-E1	Vishay Siliconix	MOSFET P-CH 20V 1.9A MICROFOOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA	Package: 4-XFBGA	Stock4,192	MOSFET (Metal Oxide)	20V	-	1.8V, 4.5V	900mV @ 250µA	15nC @ 8V	-	±8V	-	500mW (Ta)	90 mOhm @ 1.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-Microfoot	4-XFBGA
STD70NS04ZL	STMicroelectronics	MOSFET N-CH 33V 70A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 33V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock630,012	MOSFET (Metal Oxide)	33V	70A (Tc)	5V, 10V	3V @ 1mA	32nC @ 5V	1800pF @ 25V	±20V	-	110W (Tc)	10.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
CSD19534Q5AT	Texas Instruments	MOSFET N-CH 100V 50 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 15.1 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,400	MOSFET (Metal Oxide)	100V	50A (Ta)	6V, 10V	3.4V @ 250µA	22nC @ 10V	1680pF @ 50V	±20V	-	3.2W (Ta), 63W (Tc)	15.1 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
STP10NM60N	STMicroelectronics	MOSFET N-CH 600V 10A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock8,856	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4V @ 250µA	19nC @ 10V	540pF @ 50V	±25V	-	70W (Tc)	550 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDPF12N50NZ	Fairchild/ON Semiconductor	MOSFET N-CH 500V TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 5.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock392,304	MOSFET (Metal Oxide)	500V	11.5A (Tc)	10V	5V @ 250µA	30nC @ 10V	1235pF @ 25V	±25V	-	42W (Tc)	520 mOhm @ 5.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDB3672_F085	Fairchild/ON Semiconductor	MOSFET N-CH 100V 44A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,000	MOSFET (Metal Oxide)	100V	7.2A (Ta), 44A (Tc)	6V, 10V	4V @ 250µA	31nC @ 10V	1710pF @ 25V	±20V	-	120W (Tc)	28 mOhm @ 44A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK7M33-60EX	Nexperia USA Inc.	MOSFET N-CH 60V MLFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 628pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 44W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: SOT-1210, 8-LFPAK33 (5-Lead)	Stock12,192	MOSFET (Metal Oxide)	60V	24A	10V	4V @ 1mA	10.9nC @ 10V	628pF @ 25V	±20V	-	44W (Tc)	33 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
BSC014N03MS G	Infineon Technologies	MOSFET N-CH 30V 100A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 173nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock37,152	MOSFET (Metal Oxide)	30V	30A (Ta), 100A (Tc)	4.5V, 10V	2V @ 250µA	173nC @ 10V	13000pF @ 15V	±20V	-	2.5W (Ta), 139W (Tc)	1.4 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IRFP260PBF	Vishay Siliconix	MOSFET N-CH 200V 46A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 280W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock14,508	MOSFET (Metal Oxide)	200V	46A (Tc)	10V	4V @ 250µA	230nC @ 10V	5200pF @ 25V	±20V	-	280W (Tc)	55 mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXFH150N30X3	IXYS	MOSFET N-CH 300V 150A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	300 V	150A (Tc)	10V	4.5V @ 4mA	177 nC @ 10 V	13100 pF @ 25 V	±20V	-	890W (Tc)	8.3mOhm @ 75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
2SK2158-T2B-AT	Renesas Electronics Corporation	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
EPC2204A	EPC	TRANS GAN 80V .006OHM AECQ101 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Stock85,602	GaNFET (Gallium Nitride)	80 V	29A (Ta)	5V	2.5V @ 4mA	7.4 nC @ 5 V	851 pF @ 50 V	+6V, -4V	-	-	6mOhm @ 16A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
PXP020-20QXJ	Nexperia USA Inc.	PXP020-20QX/SOT8002/MLPAK33 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 23.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 7.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MLPAK33 Package / Case: 8-PowerVDFN	Package: -	Stock24,261	MOSFET (Metal Oxide)	20 V	8A (Ta), 23.5A (Tc)	2.5V, 4.5V	1.25V @ 250µA	29.1 nC @ 4.5 V	1900 pF @ 10 V	±12V	-	1.7W (Ta), 15W (Tc)	20mOhm @ 7.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	MLPAK33	8-PowerVDFN
FDS3572_NL	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 8.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	8.9A (Ta)	6V, 10V	4V @ 250µA	41 nC @ 10 V	1990 pF @ 25 V	±20V	-	2.5W (Ta)	16mOhm @ 8.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
DMN2710UWQ-13	Diodes Incorporated	MOSFET BVDSS: 8V~24V SOT323 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 470mW (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	900mA (Ta)	1.8V, 4.5V	1V @ 250µA	0.6 nC @ 4.5 V	42 pF @ 16 V	±6V	-	470mW (Ta)	450mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
GAN190-650FBEZ	Nexperia USA Inc.	650 V, 190 MOHM GALLIUM NITRIDE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V Vgs (Max): +7V, -1.4V FET Feature: - Power Dissipation (Max): 125W (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: DFN5060-5 Package / Case: 8-PowerVDFN	Package: -	Stock5,913	GaNFET (Gallium Nitride)	650 V	11.5A (Ta)	6V	2.5V @ 12.2mA	2.8 nC @ 6 V	96 pF @ 400 V	+7V, -1.4V	-	125W (Ta)	190mOhm @ 3.9A, 6V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	DFN5060-5	8-PowerVDFN