Page 39 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPB05N03LB G
Infineon Technologies

MOSFET N-CH 30V 80A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock192,000
BUK6507-55C,127
NXP

MOSFET N-CH 55V 100A TO220AB

Package: TO-220-3

Stock4,496
NTD6416AN-1G
ON Semiconductor

MOSFET N-CH 100V 17A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,352
PH3075L,115
NXP

MOSFET N-CH 75V 30A LFPAK

Package: SC-100, SOT-669

Stock3,504
IRFB16N50KPBF
Vishay Siliconix

MOSFET N-CH 500V 17A TO-220AB

Package: TO-220-3

Stock78,000
IRFB16N60LPBF
Vishay Siliconix

MOSFET N-CH 600V 16A TO-220AB

Package: TO-220-3

Stock191,124
IRFR110TR
Vishay Siliconix

MOSFET N-CH 100V 4.3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock137,112
FCA20N60_F109
Fairchild/ON Semiconductor

MOSFET N-CH 600V 20A TO-3P

Package: TO-3P-3, SC-65-3

Stock7,152
IXTA56N15T
IXYS

MOSFET N-CH 150V 56A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,608
TK11A60D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 11A TO-220SIS

Package: TO-220-3 Full Pack

Stock6,528
TSM2NB65CP ROG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,360
SIS435DNT-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 30A 1212-8

Package: PowerPAK? 1212-8

Stock4,064
STL7N6LF3
STMicroelectronics

MOSFET N-CH 60V 20A PWRFLAT8

Package: 8-PowerVDFN

Stock6,560
2SK2009TE85LF
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 0.2A SMINI

Package: TO-236-3, SC-59, SOT-23-3

Stock2,352
IRFU3910PBF
Infineon Technologies

MOSFET N-CH 100V 16A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock793,500
CSD18540Q5BT
Texas Instruments

MOSFET N-CH 60V 100A 8VSON

Package: 8-PowerTDFN

Stock14,412
IRF530NSTRLPBF
Infineon Technologies

MOSFET N-CH 100V 17A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock20,604
FDMT800100DC
Fairchild/ON Semiconductor

MOSFET N-CH 100V 24A

Package: 8-PowerVDFN

Stock6,496
IRFS4410PBF
Infineon Technologies

MOSFET N-CH 100V 88A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,584
BSC010NE2LSI
Infineon Technologies

MOSFET N-CH 25V 38A TDSON-8

Package: 8-PowerTDFN

Stock900,984

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPB05N03LB G	Infineon Technologies	MOSFET N-CH 30V 80A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3209pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock192,000	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2V @ 40µA	25nC @ 5V	3209pF @ 15V	±20V	-	94W (Tc)	5 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK6507-55C,127	NXP	MOSFET N-CH 55V 100A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5160pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,496	MOSFET (Metal Oxide)	55V	100A (Tc)	4.5V, 10V	2.8V @ 1mA	82nC @ 10V	5160pF @ 25V	±16V	-	158W (Tc)	7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTD6416AN-1G	ON Semiconductor	MOSFET N-CH 100V 17A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 81 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,352	MOSFET (Metal Oxide)	100V	17A (Tc)	10V	4V @ 250µA	20nC @ 10V	620pF @ 25V	±20V	-	71W (Tc)	81 mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
PH3075L,115	NXP	MOSFET N-CH 75V 30A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock3,504	MOSFET (Metal Oxide)	75V	30A (Tc)	4.5V, 10V	2.3V @ 1mA	19nC @ 5V	2070pF @ 25V	±15V	-	75W (Tc)	28 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
IRFB16N50KPBF	Vishay Siliconix	MOSFET N-CH 500V 17A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 280W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock78,000	MOSFET (Metal Oxide)	500V	17A (Tc)	10V	5V @ 250µA	89nC @ 10V	2210pF @ 25V	±30V	-	280W (Tc)	350 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFB16N60LPBF	Vishay Siliconix	MOSFET N-CH 600V 16A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 460 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock191,124	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	5V @ 250µA	100nC @ 10V	2720pF @ 25V	±30V	-	310W (Tc)	460 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFR110TR	Vishay Siliconix	MOSFET N-CH 100V 4.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock137,112	MOSFET (Metal Oxide)	100V	4.3A (Tc)	10V	4V @ 250µA	8.3nC @ 10V	180pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	540 mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FCA20N60_F109	Fairchild/ON Semiconductor	MOSFET N-CH 600V 20A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock7,152	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 250µA	98nC @ 10V	3080pF @ 25V	±30V	-	208W (Tc)	190 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
IXTA56N15T	IXYS	MOSFET N-CH 150V 56A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,608	MOSFET (Metal Oxide)	150V	56A (Tc)	10V	4.5V @ 250µA	34nC @ 10V	2250pF @ 25V	±30V	-	300W (Tc)	36 mOhm @ 28A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TK11A60D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 11A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,528	MOSFET (Metal Oxide)	600V	11A (Ta)	10V	4V @ 1mA	28nC @ 10V	1550pF @ 25V	±30V	-	45W (Tc)	650 mOhm @ 5.5A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TSM2NB65CP ROG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, PLANA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,360	MOSFET (Metal Oxide)	650V	2A (Tc)	10V	4V @ 250µA	13nC @ 10V	390pF @ 25V	±20V	-	65W (Tc)	5 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SIS435DNT-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 30A 1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 13A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock4,064	MOSFET (Metal Oxide)	20V	30A (Tc)	1.8V, 4.5V	900mV @ 250µA	180nC @ 8V	5700pF @ 10V	±8V	-	3.7W (Ta), 39W (Tc)	5.4 mOhm @ 13A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
STL7N6LF3	STMicroelectronics	MOSFET N-CH 60V 20A PWRFLAT8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 432pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.3W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 43 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,560	MOSFET (Metal Oxide)	60V	20A (Tc)	5V, 10V	2.5V @ 250µA	8.7nC @ 10V	432pF @ 25V	±20V	-	4.3W (Ta), 52W (Tc)	43 mOhm @ 3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
2SK2009TE85LF	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 0.2A SMINI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 3V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 50MA, 2.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-59-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,352	MOSFET (Metal Oxide)	30V	200mA (Ta)	2.5V	1.5V @ 100µA	-	70pF @ 3V	±20V	-	200mW (Ta)	2 Ohm @ 50MA, 2.5V	150°C (TJ)	Surface Mount	SC-59-3	TO-236-3, SC-59, SOT-23-3
IRFU3910PBF	Infineon Technologies	MOSFET N-CH 100V 16A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 115 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock793,500	MOSFET (Metal Oxide)	100V	16A (Tc)	10V	4V @ 250µA	44nC @ 10V	640pF @ 25V	±20V	-	79W (Tc)	115 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
CSD18540Q5BT	Texas Instruments	MOSFET N-CH 60V 100A 8VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 195W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock14,412	MOSFET (Metal Oxide)	60V	100A (Ta)	4.5V, 10V	2.3V @ 250µA	53nC @ 10V	4230pF @ 30V	±20V	-	3.1W (Ta), 195W (Tc)	2.2 mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
IRF530NSTRLPBF	Infineon Technologies	MOSFET N-CH 100V 17A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 70W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock20,604	MOSFET (Metal Oxide)	100V	17A (Tc)	10V	4V @ 250µA	37nC @ 10V	920pF @ 25V	±20V	-	3.8W (Ta), 70W (Tc)	90 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDMT800100DC	Fairchild/ON Semiconductor	MOSFET N-CH 100V 24A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7835pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 2.95 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-Dual Cool?88 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,496	MOSFET (Metal Oxide)	100V	24A (Ta), 162A (Tc)	6V, 10V	4V @ 250µA	111nC @ 10V	7835pF @ 50V	±20V	-	3.2W (Ta), 156W (Tc)	2.95 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-Dual Cool?88	8-PowerVDFN
IRFS4410PBF	Infineon Technologies	MOSFET N-CH 100V 88A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,584	MOSFET (Metal Oxide)	100V	88A (Tc)	10V	4V @ 150µA	180nC @ 10V	5150pF @ 50V	±20V	-	200W (Tc)	10 mOhm @ 58A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSC010NE2LSI	Infineon Technologies	MOSFET N-CH 25V 38A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 1.05 mOhm @ 30A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock900,984	MOSFET (Metal Oxide)	25V	38A (Ta), 100A (Tc)	4.5V, 10V	2V @ 250µA	59nC @ 10V	4200pF @ 12V	±20V	-	2.5W (Ta), 96W (Tc)	1.05 mOhm @ 30A, 10V	-	Surface Mount	PG-TDSON-8	8-PowerTDFN
IXTA05N100HV-TRL	IXYS	MOSFET N-CH 1000V 750MA TO263HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 750mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263HV Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	750mA (Tc)	10V	4.5V @ 250µA	7.8 nC @ 10 V	260 pF @ 25 V	±30V	-	40W (Tc)	17Ohm @ 375mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263HV	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NVMFS5C410NWFT1G-M	onsemi	MOSFET N-CH 40V 46A/300A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 166W (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	46A (Ta), 300A (Tc)	10V	3.5V @ 250µA	86 nC @ 10 V	6100 pF @ 25 V	±20V	-	3.9W (Ta), 166W (Tc)	0.92mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
IRF6811STRPBF-INF	Infineon Technologies	DIRECTFET PLUS POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.1V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 13 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 32W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 19A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DirectFET™ Isometric SQ Package / Case: DirectFET™ Isometric SQ	Package: -	Request a Quote	MOSFET (Metal Oxide)	25 V	19A (Ta), 74A (Tc)	-	2.1V @ 35µA	17 nC @ 4.5 V	1590 pF @ 13 V	±16V	-	2.1W (Ta), 32W (Tc)	3.7mOhm @ 19A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DirectFET™ Isometric SQ	DirectFET™ Isometric SQ
IXTA2N100-TRL	IXYS	MOSFET N-CH TO263 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RJK5009DPP-00-T2	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT35SM70S	Microsemi Corporation	SICFET 700V 35A TO247-3 FET Type: - Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 35A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	SiCFET (Silicon Carbide)	700 V	35A	-	-	-	-	-	-	-	-	-	Through Hole	TO-247-3	TO-247-3
NTB6N60	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVBGS6D5N15MC	onsemi	MOSFET N-CH 150V 15/121A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 121A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.5V @ 379µA Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4745 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 238W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 69A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	15A (Ta), 121A (Tc)	8V, 10V	4.5V @ 379µA	57 nC @ 10 V	4745 pF @ 75 V	±20V	-	3.7W (Ta), 238W (Tc)	7mOhm @ 69A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-7, D2PAK (6 Leads + Tab)