Page 40 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SI2302ADS-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 2.1A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock968,124
PHP14NQ20T,127
NXP

MOSFET N-CH 200V 14A TO220AB

Package: TO-220-3

Stock7,136
FQA22P10
Fairchild/ON Semiconductor

MOSFET P-CH 100V 24A TO-3P

Package: TO-3P-3, SC-65-3

Stock110,064
NTP45N06L
ON Semiconductor

MOSFET N-CH 60V 45A TO220AB

Package: TO-220-3

Stock450,420
IRFBG30
Vishay Siliconix

MOSFET N-CH 1000V 3.1A TO-220AB

Package: TO-220-3

Stock18,672
IXFT30N60Q
IXYS

MOSFET N-CH 600V 30A TO-268(D3)

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock7,360
BUK663R7-75C,118
Nexperia USA Inc.

MOSFET N-CH 75V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,232
TPC6113(TE85L,F,M)
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 5A VS6

Package: SOT-23-6 Thin, TSOT-23-6

Stock2,496
DMP2008UFG-13
Diodes Incorporated

MOSFET P-CH 20V 14A POWERDI

Package: 8-PowerWDFN

Stock4,576
NTLUS3A18PZTCG
ON Semiconductor

MOSFET P-CH 20V 8.2A UDFN

Package: 6-UDFN Exposed Pad

Stock44,652
STU13NM60N
STMicroelectronics

MOSFET N-CH 600V 11A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,384
IRFI840GPBF
Vishay Siliconix

MOSFET N-CH 500V 4.6A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock66,240
AUIRLL014NTR
Infineon Technologies

MOSFET N-CH 55V 2A SOT-223

Package: TO-261-4, TO-261AA

Stock2,896
SIHS36N50D-E3
Vishay Siliconix

MOSFET N-CH 500V 36A SUPER-247

Package: TO-247-3

Stock11,760
SI3424CDV-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 8A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock216,948
BSC0805LSATMA1
Infineon Technologies

MOSFET N-CH 100V 79A TDSON-8-6

Package: -

Request a Quote
PSMN1R4-40YLD-2X
Nexperia USA Inc.

PSMN1R4-40YLD/SOT669/LFPAK

Package: -

Request a Quote
IAUC70N08S5N074ATMA1
Infineon Technologies

MOSFET N-CH 80V 70A 8TDSON-33

Package: -

Stock20,775
DMTH10H015SPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

Package: -

Request a Quote
DMP2045U-13
Diodes Incorporated

MOSFET P-CH 20V 4.3A SOT23

Package: -

Stock50,145

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SI2302ADS-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 2.1A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock968,124	MOSFET (Metal Oxide)	20V	2.1A (Ta)	2.5V, 4.5V	1.2V @ 50µA	10nC @ 4.5V	300pF @ 10V	±8V	-	700mW (Ta)	60 mOhm @ 3.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
PHP14NQ20T,127	NXP	MOSFET N-CH 200V 14A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,136	MOSFET (Metal Oxide)	200V	14A (Tc)	10V	4V @ 1mA	38nC @ 10V	1500pF @ 25V	±20V	-	125W (Tc)	230 mOhm @ 7A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQA22P10	Fairchild/ON Semiconductor	MOSFET P-CH 100V 24A TO-3P FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock110,064	MOSFET (Metal Oxide)	100V	24A (Tc)	10V	4V @ 250µA	50nC @ 10V	1500pF @ 25V	±30V	-	150W (Tc)	125 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
NTP45N06L	ON Semiconductor	MOSFET N-CH 60V 45A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Rds On (Max) @ Id, Vgs: 28 mOhm @ 22.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock450,420	MOSFET (Metal Oxide)	60V	45A (Ta)	5V	2V @ 250µA	32nC @ 5V	1700pF @ 25V	±15V	-	2.4W (Ta), 125W (Tj)	28 mOhm @ 22.5A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFBG30	Vishay Siliconix	MOSFET N-CH 1000V 3.1A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock18,672	MOSFET (Metal Oxide)	1000V	3.1A (Tc)	10V	4V @ 250µA	80nC @ 10V	980pF @ 25V	±20V	-	125W (Tc)	5 Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFT30N60Q	IXYS	MOSFET N-CH 600V 30A TO-268(D3) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock7,360	MOSFET (Metal Oxide)	600V	30A (Tc)	10V	4.5V @ 4mA	125nC @ 10V	4700pF @ 25V	±20V	-	500W (Tc)	230 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
BUK663R7-75C,118	Nexperia USA Inc.	MOSFET N-CH 75V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 234nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15450pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,232	MOSFET (Metal Oxide)	75V	120A (Tc)	4.5V, 10V	2.8V @ 1mA	234nC @ 10V	15450pF @ 25V	±16V	-	306W (Tc)	4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TPC6113(TE85L,F,M)	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 5A VS6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-6 (2.9x2.8) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock2,496	MOSFET (Metal Oxide)	20V	5A (Ta)	2.5V, 4.5V	1.2V @ 200µA	10nC @ 5V	690pF @ 10V	±12V	-	700mW (Ta)	55 mOhm @ 2.5A, 4.5V	150°C (TJ)	Surface Mount	VS-6 (2.9x2.8)	SOT-23-6 Thin, TSOT-23-6
DMP2008UFG-13	Diodes Incorporated	MOSFET P-CH 20V 14A POWERDI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6909pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 12A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock4,576	MOSFET (Metal Oxide)	20V	14A (Ta), 54A (Tc)	1.5V, 4.5V	1V @ 250µA	72nC @ 4.5V	6909pF @ 10V	±8V	-	2.4W (Ta), 41W (Tc)	8 mOhm @ 12A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerWDFN
NTLUS3A18PZTCG	ON Semiconductor	MOSFET P-CH 20V 8.2A UDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (2x2) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock44,652	MOSFET (Metal Oxide)	20V	5.1A (Ta)	1.5V, 4.5V	1V @ 250µA	28nC @ 4.5V	2240pF @ 15V	±8V	-	700mW (Ta)	18 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN (2x2)	6-UDFN Exposed Pad
STU13NM60N	STMicroelectronics	MOSFET N-CH 600V 11A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,384	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 250µA	27nC @ 10V	790pF @ 50V	±25V	-	90W (Tc)	360 mOhm @ 5.5A, 10V	150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRFI840GPBF	Vishay Siliconix	MOSFET N-CH 500V 4.6A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock66,240	MOSFET (Metal Oxide)	500V	4.6A (Tc)	10V	4V @ 250µA	67nC @ 10V	1300pF @ 25V	±20V	-	40W (Tc)	850 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
AUIRLL014NTR	Infineon Technologies	MOSFET N-CH 55V 2A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 140 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock2,896	MOSFET (Metal Oxide)	55V	2A (Ta)	4V, 10V	2V @ 250µA	14nC @ 10V	230pF @ 25V	±16V	-	1W (Ta)	140 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
SIHS36N50D-E3	Vishay Siliconix	MOSFET N-CH 500V 36A SUPER-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3233pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-247 (TO-274AA) Package / Case: TO-247-3	Package: TO-247-3	Stock11,760	MOSFET (Metal Oxide)	500V	36A (Tc)	10V	5V @ 250µA	125nC @ 10V	3233pF @ 100V	±30V	-	446W (Tc)	130 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	SUPER-247 (TO-274AA)	TO-247-3
SI3424CDV-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 8A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.6W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 7.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock216,948	MOSFET (Metal Oxide)	30V	8A (Tc)	4.5V, 10V	2.5V @ 250µA	12.5nC @ 10V	405pF @ 15V	±20V	-	2W (Ta), 3.6W (Tc)	26 mOhm @ 7.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
BSC0805LSATMA1	Infineon Technologies	MOSFET N-CH 100V 79A TDSON-8-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 49µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	79A (Tc)	4.5V, 10V	2.3V @ 49µA	20 nC @ 4.5 V	2700 pF @ 50 V	±20V	-	83W (Tc)	7mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-6	8-PowerTDFN
PSMN1R4-40YLD-2X	Nexperia USA Inc.	PSMN1R4-40YLD/SOT669/LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 240A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6661 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 238W (Ta) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	240A (Ta)	4.5V, 10V	2.2V @ 1mA	143 nC @ 10 V	6661 pF @ 20 V	±20V	-	238W (Ta)	1.4mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
IAUC70N08S5N074ATMA1	Infineon Technologies	MOSFET N-CH 80V 70A 8TDSON-33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 36µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-33 Package / Case: 8-PowerTDFN	Package: -	Stock20,775	MOSFET (Metal Oxide)	80 V	70A (Tc)	6V, 10V	3.8V @ 36µA	30 nC @ 10 V	2080 pF @ 40 V	±20V	-	83W (Tc)	7.4mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-33	8-PowerTDFN
DMTH10H015SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V POWERDI50 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	56A (Tc)	6V, 10V	4V @ 250µA	30.1 nC @ 10 V	2343 pF @ 50 V	±20V	-	2.7W (Ta), 94W (Tc)	14.5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
DMP2045U-13	Diodes Incorporated	MOSFET P-CH 20V 4.3A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock50,145	MOSFET (Metal Oxide)	20 V	4.3A (Ta)	1.8V, 4.5V	1V @ 250µA	6.8 nC @ 4.5 V	634 pF @ 10 V	±8V	-	800mW (Ta)	45mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SIHH080N60E-T1-GE3	Vishay Siliconix	E SERIES POWER MOSFET POWERPAK 8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 184W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	Package: -	Stock9,366	MOSFET (Metal Oxide)	600 V	32A (Tc)	10V	5V @ 250µA	63 nC @ 10 V	2557 pF @ 100 V	±30V	-	184W (Tc)	80mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 8 x 8	8-PowerTDFN
DMTH10H010SPS-13	Diodes Incorporated	MOSFET N-CH 100V PWRDI5060 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 123A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: -	Stock29,655	MOSFET (Metal Oxide)	100 V	11.8A (Ta), 123A (Tc)	6V, 10V	4V @ 250µA	56.4 nC @ 10 V	4468 pF @ 50 V	±20V	-	1.5W (Ta)	8.8mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
MTP1306	onsemi	POWER FIELD-EFFECT TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3584 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	75A (Tc)	5V, 10V	2V @ 250µA	70 nC @ 5 V	3584 pF @ 25 V	±20V	-	150W (Tc)	6.5mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
NVTFS5C460NLTAG	onsemi	MOSFET N-CH 40V 19A/74A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	19A (Ta), 74A (Tc)	4.5V, 10V	2V @ 40µA	11 nC @ 10 V	1300 pF @ 25 V	±20V	-	3.1W (Ta), 50W (Tc)	4.8mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
ISC110N12NM6ATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 3.6V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSO8 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	120 V	11A (Ta), 62A (Tc)	8V, 10V	3.6V @ 35µA	19.3 nC @ 10 V	1400 pF @ 60 V	±20V	-	3W (Ta), 94W (Tc)	11mOhm @ 26A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SuperSO8	8-PowerTDFN
2N7002-TP-HF	Micro Commercial Co	Interface FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.08W Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	340mA (Ta)	4.5V, 10V	2.5V @ 250µA	1.7 nC @ 10 V	35 pF @ 25 V	±20V	-	1.08W	2.5Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SQ2361CES-T1_GE3	Vishay Siliconix	MOSFET P-CH 60V 2.8A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	2.8A (Tc)	4.5V, 10V	2.5V @ 250µA	12 nC @ 10 V	550 pF @ 30 V	±20V	-	2W (Tc)	177mOhm @ 2.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
BSS308PEH6327XTSA1-ML	MOSLEADER	P -30V SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-