Page 410 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPD50R280CEATMA1
Infineon Technologies

MOSFET N-CH 500V 13A PG-TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,152
IPD200N15N3GBTMA1
Infineon Technologies

MOSFET N-CH 150V 50A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,896
64-2042
Infineon Technologies

MOSFET N-CH 40V 75A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,112
RAQ045P01TCR
Rohm Semiconductor

MOSFET P-CH 12V 4.5A TUMT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock36,000
AON6210
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 28A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock4,960
SCH1335-TL-H
ON Semiconductor

MOSFET P-CH 12V 2.5A SCH6

Package: SOT-563, SOT-666

Stock2,304
IXFR100N25
IXYS

MOSFET N-CH 250V 87A ISOPLUS247

Package: ISOPLUS247?

Stock5,904
FCB11N60FTM
Fairchild/ON Semiconductor

MOSFET N-CH 600V 11A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock62,400
BSS123TC
Diodes Incorporated

MOSFET N-CH 100V 170MA SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock5,936
MIC94051YM4-TR
Microchip Technology

MOSFET P-CH 6V 1.8A 8MSOP

Package: TO-253-4, TO-253AA

Stock3,904
PMV280ENEAR
Nexperia USA Inc.

PMV280ENEA/SOT23/TO-236AB

Package: -

Stock3,536
STF20N65M5
STMicroelectronics

MOSFET N CH 650V 18A TO-220FP

Package: TO-220-3 Full Pack

Stock6,208
PSMN2R8-40BS,118
Nexperia USA Inc.

MOSFET N-CH 40V 100A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,368
TSM950N10CW RPG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

Package: TO-261-4, TO-261AA

Stock7,632
FDD6690A
Fairchild/ON Semiconductor

MOSFET N-CH 30V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock41,240,256
DMT3006LPS-13
Diodes Incorporated

MOSFET N-CHA 30V 16A POWERDI

Package: 8-PowerTDFN

Stock2,128
STU7N105K5
STMicroelectronics

MOSFET N-CH 1050V 4A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock16,488
SI4823DY-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 4.1A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock16,704
IPA65R150CFDXKSA1
Infineon Technologies

MOSFET N-CH 650V 22.4A TO220

Package: TO-220-3 Full Pack

Stock24,558
IRF4905STRLPBF
Infineon Technologies

MOSFET P-CH 55V 42A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock328,176

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPD50R280CEATMA1	Infineon Technologies	MOSFET N-CH 500V 13A PG-TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 773pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 119W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.2A, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,152	MOSFET (Metal Oxide)	500V	13A (Tc)	13V	3.5V @ 350µA	32.6nC @ 10V	773pF @ 100V	±20V	-	119W (Tc)	280 mOhm @ 4.2A, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD200N15N3GBTMA1	Infineon Technologies	MOSFET N-CH 150V 50A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,896	MOSFET (Metal Oxide)	150V	50A (Tc)	8V, 10V	4V @ 90µA	31nC @ 10V	1820pF @ 75V	±20V	-	150W (Tc)	20 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
64-2042	Infineon Technologies	MOSFET N-CH 40V 75A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 220W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,112	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 250µA	150nC @ 10V	4340pF @ 25V	±20V	-	220W (Tc)	3.7 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
RAQ045P01TCR	Rohm Semiconductor	MOSFET P-CH 12V 4.5A TUMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 6V Vgs (Max): -8V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock36,000	MOSFET (Metal Oxide)	12V	4.5A (Ta)	1.5V, 4.5V	1V @ 1mA	40nC @ 4.5V	4200pF @ 6V	-8V	-	600mW (Ta)	30 mOhm @ 4.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
AON6210	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 28A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock4,960	MOSFET (Metal Oxide)	30V	28A (Ta), 85A (Tc)	4.5V, 10V	2.1V @ 250µA	100nC @ 10V	6300pF @ 15V	±20V	-	2.3W (Ta), 83W (Tc)	1.8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
SCH1335-TL-H	ON Semiconductor	MOSFET P-CH 12V 2.5A SCH6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 6V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 112 mOhm @ 1A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-SCH Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock2,304	MOSFET (Metal Oxide)	12V	2.5A (Ta)	1.8V, 4.5V	-	3.1nC @ 4.5V	270pF @ 6V	±10V	-	800mW (Ta)	112 mOhm @ 1A, 4.5V	150°C (TJ)	Surface Mount	6-SCH	SOT-563, SOT-666
IXFR100N25	IXYS	MOSFET N-CH 250V 87A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock5,904	MOSFET (Metal Oxide)	250V	87A (Tc)	10V	4V @ 8mA	300nC @ 10V	9100pF @ 25V	±20V	-	400W (Tc)	27 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
FCB11N60FTM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 11A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock62,400	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	52nC @ 10V	1490pF @ 25V	±30V	-	125W (Tc)	380 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSS123TC	Diodes Incorporated	MOSFET N-CH 100V 170MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock5,936	MOSFET (Metal Oxide)	100V	170mA (Ta)	4.5V, 10V	2.8V @ 1mA	-	20pF @ 25V	±20V	-	360mW (Ta)	6 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
MIC94051YM4-TR	Microchip Technology	MOSFET P-CH 6V 1.8A 8MSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 6V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V Vgs (Max): 6V FET Feature: - Power Dissipation (Max): 568mW (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-143 Package / Case: TO-253-4, TO-253AA	Package: TO-253-4, TO-253AA	Stock3,904	MOSFET (Metal Oxide)	6V	1.8A (Ta)	1.8V, 4.5V	1.2V @ 250µA	-	600pF @ 5.5V	6V	-	568mW (Ta)	160 mOhm @ 100mA, 4.5V	-40°C ~ 150°C (TJ)	Surface Mount	SOT-143	TO-253-4, TO-253AA
PMV280ENEAR	Nexperia USA Inc.	PMV280ENEA/SOT23/TO-236AB FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,536	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STF20N65M5	STMicroelectronics	MOSFET N CH 650V 18A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,208	MOSFET (Metal Oxide)	650V	18A (Tc)	10V	5V @ 250µA	45nC @ 10V	1345pF @ 100V	±25V	-	30W (Tc)	190 mOhm @ 9A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
PSMN2R8-40BS,118	Nexperia USA Inc.	MOSFET N-CH 40V 100A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4491pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 211W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,368	MOSFET (Metal Oxide)	40V	100A (Tc)	10V	4V @ 1mA	71nC @ 10V	4491pF @ 20V	±20V	-	211W (Tc)	2.9 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TSM950N10CW RPG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, TRENC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 9W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock7,632	MOSFET (Metal Oxide)	100V	6.5A (Tc)	4.5V, 10V	2.5V @ 250µA	9.3nC @ 10V	1480pF @ 50V	±20V	-	9W (Tc)	95 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
FDD6690A	Fairchild/ON Semiconductor	MOSFET N-CH 30V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 56W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock41,240,256	MOSFET (Metal Oxide)	30V	12A (Ta), 46A (Tc)	4.5V, 10V	3V @ 250µA	18nC @ 5V	1230pF @ 15V	±20V	-	3.3W (Ta), 56W (Tc)	12 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
DMT3006LPS-13	Diodes Incorporated	MOSFET N-CHA 30V 16A POWERDI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,128	MOSFET (Metal Oxide)	30V	16A (Ta), 65A (Tc)	4.5V, 10V	3V @ 250µA	22.6nC @ 10V	1320pF @ 15V	±20V	-	1.3W (Ta), 42W (Tc)	6 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
STU7N105K5	STMicroelectronics	MOSFET N-CH 1050V 4A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1050V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock16,488	MOSFET (Metal Oxide)	1050V	4A (Tc)	10V	5V @ 100µA	17nC @ 10V	380pF @ 100V	±30V	-	110W (Tc)	2 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
SI4823DY-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 4.1A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.7W (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs: 108 mOhm @ 3.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock16,704	MOSFET (Metal Oxide)	20V	4.1A (Tc)	2.5V, 4.5V	1.5V @ 250µA	12nC @ 10V	660pF @ 10V	±12V	Schottky Diode (Isolated)	1.7W (Ta), 2.8W (Tc)	108 mOhm @ 3.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IPA65R150CFDXKSA1	Infineon Technologies	MOSFET N-CH 650V 22.4A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34.7W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 9.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock24,558	MOSFET (Metal Oxide)	650V	22.4A (Tc)	10V	4.5V @ 1mA	86nC @ 10V	2340pF @ 100V	±20V	-	34.7W (Tc)	150 mOhm @ 9.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
IRF4905STRLPBF	Infineon Technologies	MOSFET P-CH 55V 42A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 42A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock328,176	MOSFET (Metal Oxide)	55V	42A (Tc)	10V	4V @ 250µA	180nC @ 10V	3500pF @ 25V	±20V	-	170W (Tc)	20 mOhm @ 42A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TQM070NH04CR-RLG	Taiwan Semiconductor Corporation	40V, 54A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2006 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 46.8W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Stock14,940	MOSFET (Metal Oxide)	40 V	16A (Ta), 54A (Tc)	7V, 10V	3.6V @ 250µA	28.5 nC @ 10 V	2006 pF @ 25 V	±20V	-	46.8W (Tc)	7mOhm @ 27A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PDFN (5x6)	8-PowerTDFN
SIHA21N60EF-GE3	Vishay Siliconix	N-CHANNEL 600V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: -	Stock5,994	MOSFET (Metal Oxide)	600 V	9A (Tc)	10V	4V @ 250µA	84 nC @ 10 V	2030 pF @ 100 V	±30V	-	35W (Tc)	176mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
PJQ5431E-AU_R2_006A1	Panjit International Inc.	30V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060-8 Package / Case: 8-PowerVDFN	Package: -	Stock8,700	MOSFET (Metal Oxide)	30 V	18A (Ta), 86A (Tc)	4.5V, 10V	2.5V @ 250µA	68 nC @ 10 V	3040 pF @ 25 V	±25V	-	3.3W (Ta), 75W (Tc)	6.4mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN5060-8	8-PowerVDFN
2SJ636-TL-E	onsemi	PCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MMFT1N10ET3	onsemi	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFP12N65X2	IXYS	MOSFET N-CH 650V 12A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Stock870	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	5V @ 250µA	18.5 nC @ 10 V	1134 pF @ 25 V	±30V	-	180W (Tc)	310mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
GT060N04K	Goford Semiconductor	MOSFET, N-CH, 40V,54A,TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1279 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 44W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock6,930	MOSFET (Metal Oxide)	40 V	54A (Tc)	4.5V, 10V	2.3V @ 250µA	19 nC @ 10 V	1279 pF @ 20 V	±20V	-	44W (Tc)	5.5mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
MMBT7002KW-AQ	Diotec Semiconductor	MOSFET SOT-323 N 60V 0.3A 1.6? 1 FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-363 Package / Case: 6-VSSOP, SC-88, SOT-363	Package: -	Request a Quote	MOSFET (Metal Oxide)	-	300mA (Ta)	-	2.1V @ 250µA	-	-	-	-	-	4Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-363	6-VSSOP, SC-88, SOT-363