Page 424 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPP15N65C3HKSA1
Infineon Technologies

MOSFET N-CH 650V 15A TO-220

Package: TO-220-3

Stock3,536
IPI80N06S207AKSA1
Infineon Technologies

MOSFET N-CH 55V 80A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,024
IPB25N06S3-25
Infineon Technologies

MOSFET N-CH 55V 25A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock103,464
BSP171PE6327T
Infineon Technologies

MOSFET P-CH 60V 1.9A SOT223

Package: TO-261-4, TO-261AA

Stock2,560
IRFZ46ZPBF
Infineon Technologies

MOSFET N-CH 55V 51A TO-220AB

Package: TO-220-3

Stock10,944
IRLZ24NL
Infineon Technologies

MOSFET N-CH 55V 18A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,808
AOD4185L
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 40V TO252

Package: -

Stock91,356
IXUN280N10
IXYS

MOSFET N-CH 100V 280A SOT-227B

Package: SOT-227-4, miniBLOC

Stock5,168
BSN20,215
Nexperia USA Inc.

MOSFET N-CH 50V 173MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock291,840
IPS040N03LGAKMA1
Infineon Technologies

MOSFET N-CHANNEL 30V 90A TO251-3

Package: TO-251-3 Stub Leads, IPak

Stock4,944
IRFR420ATRLPBF
Vishay Siliconix

MOSFET N-CH 500V 3.3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock469,680
NDD60N745U1T4G
ON Semiconductor

MOSFET N-CH 600V 6.8A DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,912
5LP01SS-TL-H
ON Semiconductor

MOSFET P-CH 50V 70MA SSFP

Package: 3-SMD, Flat Leads

Stock6,080
FK3906010L
Panasonic Electronic Components

MOSFET N-CH 60V 100MA SSMINI3

Package: SC-89, SOT-490

Stock2,832
SI7370DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 9.6A PPAK SO-8

Package: PowerPAK? SO-8

Stock84,336
IPB035N08N3 G
Infineon Technologies

MOSFET N-CH 80V 100A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,808
FDMC86324
Fairchild/ON Semiconductor

MOSFET N-CH 80V 20A POWER33

Package: 8-PowerTDFN

Stock5,568
APT19M120J
Microsemi Corporation

MOSFET N-CH 1200V 19A SOT-227

Package: SOT-227-4, miniBLOC

Stock3,808
FQI13N50CTU
Fairchild/ON Semiconductor

MOSFET N-CH 500V 13A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock20,628
DMP31D0UFB4-7B
Diodes Incorporated

MOSFET P-CH 30V 540MA 3DFN

Package: 3-XFDFN

Stock5,952

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPP15N65C3HKSA1	Infineon Technologies	MOSFET N-CH 650V 15A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 675µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 9.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock3,536	MOSFET (Metal Oxide)	650V	15A (Tc)	10V	3.9V @ 675µA	63nC @ 10V	1600pF @ 25V	±20V	-	156W (Tc)	280 mOhm @ 9.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPI80N06S207AKSA1	Infineon Technologies	MOSFET N-CH 55V 80A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 68A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,024	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 180µA	110nC @ 10V	3400pF @ 25V	±20V	-	250W (Tc)	6.6 mOhm @ 68A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IPB25N06S3-25	Infineon Technologies	MOSFET N-CH 55V 25A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1862pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 24.8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock103,464	MOSFET (Metal Oxide)	55V	25A (Tc)	10V	4V @ 20µA	41nC @ 10V	1862pF @ 25V	±20V	-	48W (Tc)	24.8 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSP171PE6327T	Infineon Technologies	MOSFET P-CH 60V 1.9A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 460µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock2,560	MOSFET (Metal Oxide)	60V	1.9A (Ta)	4.5V, 10V	2V @ 460µA	20nC @ 10V	460pF @ 25V	±20V	-	1.8W (Ta)	300 mOhm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
IRFZ46ZPBF	Infineon Technologies	MOSFET N-CH 55V 51A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 82W (Tc) Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock10,944	MOSFET (Metal Oxide)	55V	51A (Tc)	10V	4V @ 250µA	46nC @ 10V	1460pF @ 25V	±20V	-	82W (Tc)	13.6 mOhm @ 31A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRLZ24NL	Infineon Technologies	MOSFET N-CH 55V 18A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,808	MOSFET (Metal Oxide)	55V	18A (Tc)	4V, 10V	2V @ 250µA	15nC @ 5V	480pF @ 25V	±16V	-	3.8W (Ta), 45W (Tc)	60 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
AOD4185L	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 40V TO252 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock91,356	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXUN280N10	IXYS	MOSFET N-CH 100V 280A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 280A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 440nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 770W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 140A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,168	MOSFET (Metal Oxide)	100V	280A	10V	4V @ 4mA	440nC @ 10V	18000pF @ 25V	±20V	-	770W (Tc)	5 mOhm @ 140A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
BSN20,215	Nexperia USA Inc.	MOSFET N-CH 50V 173MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 173mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Tc) Rds On (Max) @ Id, Vgs: 15 Ohm @ 100mA, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock291,840	MOSFET (Metal Oxide)	50V	173mA (Ta)	5V, 10V	1V @ 1mA	-	25pF @ 10V	±20V	-	830mW (Tc)	15 Ohm @ 100mA, 10V	-65°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
IPS040N03LGAKMA1	Infineon Technologies	MOSFET N-CHANNEL 30V 90A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 15V Vgs (Max): - FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock4,944	MOSFET (Metal Oxide)	30V	90A (Tc)	4.5V, 10V	2.2V @ 250µA	38nC @ 10V	3900pF @ 15V	-	-	79W (Tc)	4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Stub Leads, IPak
IRFR420ATRLPBF	Vishay Siliconix	MOSFET N-CH 500V 3.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock469,680	MOSFET (Metal Oxide)	500V	3.3A (Tc)	10V	4.5V @ 250µA	17nC @ 10V	340pF @ 25V	±30V	-	83W (Tc)	3 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
NDD60N745U1T4G	ON Semiconductor	MOSFET N-CH 600V 6.8A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 84W (Tc) Rds On (Max) @ Id, Vgs: 745 mOhm @ 3.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,912	MOSFET (Metal Oxide)	600V	6.6A (Tc)	10V	4V @ 250µA	15nC @ 10V	440pF @ 50V	±25V	-	84W (Tc)	745 mOhm @ 3.25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
5LP01SS-TL-H	ON Semiconductor	MOSFET P-CH 50V 70MA SSFP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 70mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 23 Ohm @ 40mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-SSFP Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock6,080	MOSFET (Metal Oxide)	50V	70mA (Ta)	1.5V, 4V	-	1.4nC @ 10V	7.4pF @ 10V	±10V	-	150mW (Ta)	23 Ohm @ 40mA, 4V	150°C (TJ)	Surface Mount	3-SSFP	3-SMD, Flat Leads
FK3906010L	Panasonic Electronic Components	MOSFET N-CH 60V 100MA SSMINI3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 125mW (Ta) Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SSMini3-F3-B Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock2,832	MOSFET (Metal Oxide)	60V	100mA (Ta)	2.5V, 4V	1.5V @ 1µA	-	12pF @ 3V	±12V	-	125mW (Ta)	12 Ohm @ 10mA, 4V	150°C (TJ)	Surface Mount	SSMini3-F3-B	SC-89, SOT-490
SI7370DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 9.6A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock84,336	MOSFET (Metal Oxide)	60V	9.6A (Ta)	10V	4V @ 250µA	57nC @ 10V	-	±20V	-	1.9W (Ta)	11 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
IPB035N08N3 G	Infineon Technologies	MOSFET N-CH 80V 100A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 155µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,808	MOSFET (Metal Oxide)	80V	100A (Tc)	6V, 10V	3.5V @ 155µA	117nC @ 10V	8110pF @ 40V	±20V	-	214W (Tc)	3.5 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDMC86324	Fairchild/ON Semiconductor	MOSFET N-CH 80V 20A POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 965pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,568	MOSFET (Metal Oxide)	80V	7A (Ta), 20A (Tc)	6V, 10V	4V @ 250µA	18nC @ 10V	965pF @ 50V	±20V	-	2.3W (Ta), 41W (Tc)	23 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power33	8-PowerTDFN
APT19M120J	Microsemi Corporation	MOSFET N-CH 1200V 19A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 19A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 545W (Tc) Rds On (Max) @ Id, Vgs: 530 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,808	MOSFET (Metal Oxide)	1200V	19A	10V	5V @ 2.5mA	300nC @ 10V	9670pF @ 25V	±30V	-	545W (Tc)	530 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
FQI13N50CTU	Fairchild/ON Semiconductor	MOSFET N-CH 500V 13A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 195W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock20,628	MOSFET (Metal Oxide)	500V	13A (Tc)	10V	4V @ 250µA	56nC @ 10V	2055pF @ 25V	±30V	-	195W (Tc)	480 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
DMP31D0UFB4-7B	Diodes Incorporated	MOSFET P-CH 30V 540MA 3DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 76pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 460mW (Ta) Rds On (Max) @ Id, Vgs: 1 Ohm @ 400mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN1006-3 Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock5,952	MOSFET (Metal Oxide)	30V	540mA (Ta)	1.8V, 4.5V	1.1V @ 250µA	0.9nC @ 4.5V	76pF @ 15V	±8V	-	460mW (Ta)	1 Ohm @ 400mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN1006-3	3-XFDFN
IRFP064NPBF	Infineon Technologies	MOSFET N-CH 55V 110A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 59A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock161,508	MOSFET (Metal Oxide)	55V	110A (Tc)	10V	4V @ 250µA	170nC @ 10V	4000pF @ 25V	±20V	-	200W (Tc)	8 mOhm @ 59A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
RJK5014DPK-00-T0	onsemi	MOSFET N-CH 500V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT4013DRC15	Rohm Semiconductor	750V, 13M, 4-PIN THD, TRENCH-STR FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 750 V Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4.8V @ 30.8mA Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V Vgs (Max): +21V, -4V FET Feature: - Power Dissipation (Max): 312W Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Request a Quote	SiCFET (Silicon Carbide)	750 V	105A (Tc)	18V	4.8V @ 30.8mA	170 nC @ 18 V	4580 pF @ 500 V	+21V, -4V	-	312W	16.9mOhm @ 58A, 18V	175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
DMG3420UQ-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V SOT23 T&R 3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5.47A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 434.7 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 740mW Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock18,000	MOSFET (Metal Oxide)	20 V	5.47A (Ta)	1.8V, 10V	1.2V @ 250µA	5.4 nC @ 4.5 V	434.7 pF @ 10 V	±12V	-	740mW	29mOhm @ 6A, 10V	-55°C ~ 150°C	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
BSF110N06NT3GXUMA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 33µA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2 Package / Case: DirectFET™ Isometric ST	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	47A (Tc)	10V	4V @ 33µA	46 nC @ 10 V	3700 pF @ 30 V	±20V	-	38W (Tc)	11mOhm @ 30A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	MG-WDSON-2	DirectFET™ Isometric ST
UPA1874GR-9JG-E1-A	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIDR140DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 25V 79A/100A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	25 V	79A (Ta), 100A (Tc)	4.5V, 10V	2.1V @ 250µA	170 nC @ 10 V	8150 pF @ 10 V	+20V, -16V	-	6.25W (Ta), 125W (Tc)	0.67mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8
PSMN5R0-40MSHX	Nexperia USA Inc.	MOSFET N-CH 40V 85A LFPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 85A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Ta) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: -	Stock8,718	MOSFET (Metal Oxide)	40 V	85A (Ta)	10V	3.6V @ 1mA	29 nC @ 10 V	2010 pF @ 20 V	±20V	-	83W (Ta)	5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)