Page 425 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7477TR
Infineon Technologies

MOSFET N-CH 30V 14A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,568
AOY516
Alpha & Omega Semiconductor Inc.

MOSFET N-CH TO251B

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,112
NTLUS3A18PZCTAG
ON Semiconductor

MOSFET P-CH 20V 8.2A UDFN

Package: 6-UDFN Exposed Pad

Stock3,856
ATP214-TL-H
ON Semiconductor

MOSFET N-CH 60V 75A ATPAK

Package: ATPAK (2 leads+tab)

Stock6,624
AOT8N60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 8A TO-220

Package: TO-220-3

Stock36,612
IRFI730G
Vishay Siliconix

MOSFET N-CH 400V 3.7A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock259,536
BUK95180-100A,127
NXP

MOSFET N-CH 100V 11A TO220AB

Package: TO-220-3

Stock7,200
STP6N52K3
STMicroelectronics

MOSFET N-CH 525V 5A TO-220

Package: TO-220-3

Stock3,456
DMN62D0LFD-7
Diodes Incorporated

MOSFET N-CH 60V 0.31A 3-DFN

Package: 3-UDFN

Stock4,368
IXFN56N90P
IXYS

MOSFET N-CH 900V 56A SOT-227B

Package: SOT-227-4, miniBLOC

Stock78,384
IPD65R250E6XTMA1
Infineon Technologies

MOSFET N-CH TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,864
PMXB43UNE
Nexperia USA Inc.

MOSFET N-CH 20V 3.2A 3DFN

Package: 3-XDFN Exposed Pad

Stock3,200
BSZ42DN25NS3 G
Infineon Technologies

MOSFET N-CH 250V 5A TSDSON-8

Package: 8-PowerTDFN

Stock51,054
NDF0610
onsemi

MOSFET P-CH 60V 180MA TO92-3

Package: -

Request a Quote
APT6025BLLG
Microchip Technology

MOSFET N-CH 600V 24A TO247

Package: -

Request a Quote
BSH103BKR
Nexperia USA Inc.

BSH103BK - 30 V, N-CHANNEL TRENC

Package: -

Stock61,914
UJ4C075060L8SSR
Qorvo

750V/60MO,SICFET,G4,TOLL

Package: -

Request a Quote
PJA3449-AU_R1_000A1
Panjit International Inc.

SOT-23, MOSFET

Package: -

Stock80,910
ECH8607-TL-E
Sanyo

N-CHANNEL SILICON MOSFET

Package: -

Request a Quote
IRFH7440TR2PBF
Infineon Technologies

MOSFET N-CH 40V 85A 8PQFN

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7477TR	Infineon Technologies	MOSFET N-CH 30V 14A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2710pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,568	MOSFET (Metal Oxide)	30V	14A (Ta)	4.5V, 10V	2.5V @ 250µA	38nC @ 4.5V	2710pF @ 15V	±20V	-	2.5W (Ta)	8.5 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AOY516	Alpha & Omega Semiconductor Inc.	MOSFET N-CH TO251B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251B Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,112	MOSFET (Metal Oxide)	30V	46A (Tc)	4.5V, 10V	2.6V @ 250µA	33nC @ 10V	1333pF @ 15V	±20V	-	2.5W (Ta), 50W (Tc)	5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251B	TO-251-3 Short Leads, IPak, TO-251AA
NTLUS3A18PZCTAG	ON Semiconductor	MOSFET P-CH 20V 8.2A UDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (2x2) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock3,856	MOSFET (Metal Oxide)	20V	5.1A (Ta)	1.5V, 4.5V	1V @ 250µA	28nC @ 4.5V	2240pF @ 15V	±8V	-	-	18 mOhm @ 7A, 4.5V	-	Surface Mount	6-UDFN (2x2)	6-UDFN Exposed Pad
ATP214-TL-H	ON Semiconductor	MOSFET N-CH 60V 75A ATPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 8.1 mOhm @ 38A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	Package: ATPAK (2 leads+tab)	Stock6,624	MOSFET (Metal Oxide)	60V	75A (Ta)	4V, 10V	-	96nC @ 10V	4850pF @ 20V	±20V	-	60W (Tc)	8.1 mOhm @ 38A, 10V	150°C (TJ)	Surface Mount	ATPAK	ATPAK (2 leads+tab)
AOT8N60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock36,612	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	4.5V @ 250µA	35nC @ 10V	1370pF @ 25V	±30V	-	208W (Tc)	900 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IRFI730G	Vishay Siliconix	MOSFET N-CH 400V 3.7A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock259,536	MOSFET (Metal Oxide)	400V	3.7A (Tc)	10V	4V @ 250µA	38nC @ 10V	700pF @ 25V	±20V	-	35W (Tc)	1 Ohm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
BUK95180-100A,127	NXP	MOSFET N-CH 100V 11A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 173 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,200	MOSFET (Metal Oxide)	100V	11A (Tc)	4.5V, 10V	2V @ 1mA	-	619pF @ 25V	±15V	-	54W (Tc)	173 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP6N52K3	STMicroelectronics	MOSFET N-CH 525V 5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock3,456	MOSFET (Metal Oxide)	525V	5A (Tc)	10V	4.5V @ 50µA	26nC @ 10V	670pF @ 50V	±30V	-	70W (Tc)	1.2 Ohm @ 2.5A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
DMN62D0LFD-7	Diodes Incorporated	MOSFET N-CH 60V 0.31A 3-DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 500nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 100mA, 4V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X1-DFN1212-3 Package / Case: 3-UDFN	Package: 3-UDFN	Stock4,368	MOSFET (Metal Oxide)	60V	310mA (Ta)	1.8V, 4V	1V @ 250µA	500nC @ 4.5V	31pF @ 25V	±20V	-	480mW (Ta)	2 Ohm @ 100mA, 4V	-55°C ~ 150°C (TJ)	Surface Mount	X1-DFN1212-3	3-UDFN
IXFN56N90P	IXYS	MOSFET N-CH 900V 56A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 56A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1000W (Tc) Rds On (Max) @ Id, Vgs: 135 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock78,384	MOSFET (Metal Oxide)	900V	56A	10V	6.5V @ 3mA	375nC @ 10V	23000pF @ 25V	±30V	-	1000W (Tc)	135 mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IPD65R250E6XTMA1	Infineon Technologies	MOSFET N-CH TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,864	MOSFET (Metal Oxide)	650V	16.1A (Tc)	10V	3.5V @ 400µA	45nC @ 10V	950pF @ 1000V	±20V	-	208W (Tc)	250 mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
PMXB43UNE	Nexperia USA Inc.	MOSFET N-CH 20V 3.2A 3DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 551pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 400mW (Ta), 8.33W (Tc) Rds On (Max) @ Id, Vgs: 54 mOhm @ 3.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1010D-3 Package / Case: 3-XDFN Exposed Pad	Package: 3-XDFN Exposed Pad	Stock3,200	MOSFET (Metal Oxide)	20V	3.2A (Ta)	1.5V, 4.5V	900mV @ 250µA	10nC @ 4.5V	551pF @ 10V	±8V	-	400mW (Ta), 8.33W (Tc)	54 mOhm @ 3.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1010D-3	3-XDFN Exposed Pad
BSZ42DN25NS3 G	Infineon Technologies	MOSFET N-CH 250V 5A TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33.8W (Tc) Rds On (Max) @ Id, Vgs: 425 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock51,054	MOSFET (Metal Oxide)	250V	5A (Tc)	10V	4V @ 13µA	5.5nC @ 10V	430pF @ 100V	±20V	-	33.8W (Tc)	425 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
NDF0610	onsemi	MOSFET P-CH 60V 180MA TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	180mA (Ta)	-	3.5V @ 1mA	1.43 nC @ 10 V	60 pF @ 25 V	-	-	-	10Ohm @ 500mA, 10V	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
APT6025BLLG	Microchip Technology	MOSFET N-CH 600V 24A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 250mOhm @ 12A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	24A (Tc)	-	5V @ 1mA	65 nC @ 10 V	2910 pF @ 25 V	-	-	-	250mOhm @ 12A, 10V	-	Through Hole	TO-247 [B]	TO-247-3
BSH103BKR	Nexperia USA Inc.	BSH103BK - 30 V, N-CHANNEL TRENC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 79.3 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 330mW (Ta), 2.1W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock61,914	MOSFET (Metal Oxide)	30 V	1A (Ta)	1.8V, 4.5V	1.25V @ 250µA	1.2 nC @ 4.5 V	79.3 pF @ 15 V	±12V	-	330mW (Ta), 2.1W (Tc)	270mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
UJ4C075060L8SSR	Qorvo	750V/60MO,SICFET,G4,TOLL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJA3449-AU_R1_000A1	Panjit International Inc.	SOT-23, MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 299 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock80,910	MOSFET (Metal Oxide)	40 V	2.2A (Ta)	4.5V, 10V	2.1V @ 250µA	7.3 nC @ 10 V	299 pF @ 20 V	±20V	-	1.25W (Ta)	160mOhm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
ECH8607-TL-E	Sanyo	N-CHANNEL SILICON MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFH7440TR2PBF	Infineon Technologies	MOSFET N-CH 40V 85A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4574 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	85A (Tc)	-	3.9V @ 100µA	138 nC @ 10 V	4574 pF @ 25 V	-	-	-	2.4mOhm @ 50A, 10V	-	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
DMP4016SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 119W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	86A (Tc)	4.5V, 10V	2.5V @ 250µA	112 nC @ 10 V	5697 pF @ 20 V	±20V	-	3.9W (Ta), 119W (Tc)	10mOhm @ 9.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
FQB7N60TM-WS	Fairchild Semiconductor	FQB7N60 - MOSFET N-CHANNEL SINGL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 142W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	7.4A (Tc)	10V	5V @ 250µA	38 nC @ 10 V	1430 pF @ 25 V	±30V	-	3.13W (Ta), 142W (Tc)	1Ohm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SCH1402-TL-E	onsemi	NCH 1.8V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMN2990UFO-7B	Diodes Incorporated	MOSFET N-CH 20V 750MA 3DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 840mW (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN0604-3 Package / Case: 3-XFDFN	Package: -	Stock25,089	MOSFET (Metal Oxide)	20 V	750mA (Ta)	1.5V, 4.5V	1V @ 250µA	0.41 nC @ 4.5 V	31 pF @ 15 V	±8V	-	840mW (Ta)	990mOhm @ 100mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN0604-3	3-XFDFN
IAUA200N04S5N010ATMA1	Infineon Technologies	MOSFET_(20V 40V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-5-1 Package / Case: 5-PowerSFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	200A (Tc)	7V, 10V	3.4V @ 100µA	132 nC @ 10 V	7650 pF @ 25 V	±20V	-	167W (Tc)	1mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-5-1	5-PowerSFN
SSF6912	Good-Ark Semiconductor	MOSFET, N-CHANNEL, 60V, 5A, SOT- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6L Package / Case: SOT-23-6	Package: -	Stock17,949	MOSFET (Metal Oxide)	60 V	2.9A (Ta)	4.5V, 10V	2.5V @ 250µA	14 nC @ 10 V	725 pF @ 15 V	±20V	-	1W (Ta)	75mOhm @ 2A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	SOT-23-6L	SOT-23-6
SIHD6N65ET5-GE3	Vishay Siliconix	MOSFET N-CH 650V 7A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	7A (Tc)	10V	4V @ 250µA	48 nC @ 10 V	820 pF @ 100 V	±30V	-	78W (Tc)	600mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
AP2P052N-HF-ML	MOSLEADER	Single P -20V -4A SOT-23S FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-