Page 427 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF5803TR
Infineon Technologies

MOSFET P-CH 40V 3.4A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock2,538,852
AOD4144_002
Alpha & Omega Semiconductor Inc.

MOSFET N-CH TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,232
PSMN014-60LS,115
NXP

MOSFET N-CH 60V QFN3333

Package: 8-VDFN Exposed Pad

Stock6,864
IRF620STRR
Vishay Siliconix

MOSFET N-CH 200V 5.2A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,600
IXFN80N50Q2
IXYS

MOSFET N-CH 500V 80A SOT-227B

Package: SOT-227-4, miniBLOC

Stock5,328
DMPH6023SK3Q-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,184
DMT10H015LK3-13
Diodes Incorporated

MOSFET BVDSS: 61V 100V TO252 T&R

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,040
AOI442
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 7A TO251A

Package: TO-251-3 Stub Leads, IPak

Stock36,864
AO4438
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 8.2A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock127,104
AOD450
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 200V 3.8A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock470,568
SCH1345-TL-H
ON Semiconductor

MOSFET P-CH 20V 4.5A SOT563

Package: SOT-563, SOT-666

Stock3,792
IRL3705NSTRLPBF
Infineon Technologies

MOSFET N-CH 55V 89A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,032
DN1509K1-G
Microchip Technology

MOSFET N-CH 90V 0.2A SOT23-5

Package: SC-74A, SOT-753

Stock7,152
IRFB4410PBF
Infineon Technologies

MOSFET N-CH 100V 96A TO-220AB

Package: TO-220-3

Stock8,712
IPD90P04P4L04ATMA1
Infineon Technologies

MOSFET P-CH 40V 90A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock49,170
2N7000_D74Z
Fairchild/ON Semiconductor

MOSFET N-CH 60V 200MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock35,112
SQJA37EP-T1_GE3
Vishay Siliconix

MOSFET P-CH 30V 30A PPAK SO-8

Package: -

Stock16,401
XP9561GI
YAGEO XSEMI

MOSFET P-CH 40V 36A TO220CFM

Package: -

Stock2,886
RJK1535DPE-LE
Renesas Electronics Corporation

40A, 150V, 0.052OHM, N-CHANNEL M

Package: -

Request a Quote
DMT10H025LSS-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V SO-8 T&R

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF5803TR	Infineon Technologies	MOSFET P-CH 40V 3.4A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro6?(TSOP-6) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock2,538,852	MOSFET (Metal Oxide)	40V	3.4A (Ta)	4.5V, 10V	3V @ 250µA	37nC @ 10V	1110pF @ 25V	±20V	-	2W (Ta)	112 mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)	SOT-23-6 Thin, TSOT-23-6
AOD4144_002	Alpha & Omega Semiconductor Inc.	MOSFET N-CH TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,232	MOSFET (Metal Oxide)	30V	13A (Ta), 55A (Tc)	4.5V, 10V	2.4V @ 250µA	28nC @ 10V	1430pF @ 15V	±20V	-	2.3W (Ta), 50W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN014-60LS,115	NXP	MOSFET N-CH 60V QFN3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1264pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN3333 (3.3x3.3) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock6,864	MOSFET (Metal Oxide)	60V	40A (Tc)	10V	4V @ 1mA	19.6nC @ 10V	1264pF @ 30V	±20V	-	65W (Tc)	14 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN3333 (3.3x3.3)	8-VDFN Exposed Pad
IRF620STRR	Vishay Siliconix	MOSFET N-CH 200V 5.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,600	MOSFET (Metal Oxide)	200V	5.2A (Tc)	10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	±20V	-	3W (Ta), 50W (Tc)	800 mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFN80N50Q2	IXYS	MOSFET N-CH 500V 80A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 80A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,328	MOSFET (Metal Oxide)	500V	80A	10V	4.5V @ 8mA	250nC @ 10V	12800pF @ 25V	±30V	-	890W (Tc)	60 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
DMPH6023SK3Q-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W Rds On (Max) @ Id, Vgs: 33 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,184	MOSFET (Metal Oxide)	60V	35A (Tc)	4.5V, 10V	3V @ 250µA	53.1nC @ 10V	2569pF @ 30V	±20V	-	3.2W	33 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
DMT10H015LK3-13	Diodes Incorporated	MOSFET BVDSS: 61V 100V TO252 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1871pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.9W (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,040	MOSFET (Metal Oxide)	100V	50A (Tc)	6V, 10V	3.5V @ 250µA	33.3nC @ 10V	1871pF @ 50V	±20V	-	2.9W (Ta)	15 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
AOI442	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 7A TO251A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock36,864	MOSFET (Metal Oxide)	60V	7A (Ta), 37A (Tc)	4.5V, 10V	2.7V @ 250µA	68nC @ 10V	2300pF @ 30V	±20V	-	2.1W (Ta), 60W (Tc)	20 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251A	TO-251-3 Stub Leads, IPak
AO4438	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 8.2A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 8.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock127,104	MOSFET (Metal Oxide)	60V	8.2A (Ta)	4.5V, 10V	3V @ 250µA	58nC @ 10V	2300pF @ 30V	±20V	-	3.1W (Ta)	22 mOhm @ 8.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
AOD450	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 200V 3.8A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 3.8A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock470,568	MOSFET (Metal Oxide)	200V	3.8A (Tc)	10V	6V @ 250µA	3.82nC @ 10V	215pF @ 25V	±30V	-	2.1W (Ta), 25W (Tc)	700 mOhm @ 3.8A, 15V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SCH1345-TL-H	ON Semiconductor	MOSFET P-CH 20V 4.5A SOT563 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 49 mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-563/SCH6 Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock3,792	MOSFET (Metal Oxide)	20V	4.5A (Ta)	1.5V, 4.5V	1.3V @ 1mA	11nC @ 4.5V	1220pF @ 10V	±10V	-	1W (Ta)	49 mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	SOT-563/SCH6	SOT-563, SOT-666
IRL3705NSTRLPBF	Infineon Technologies	MOSFET N-CH 55V 89A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 46A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,032	MOSFET (Metal Oxide)	55V	89A (Tc)	4V, 10V	2V @ 250µA	98nC @ 5V	3600pF @ 25V	±16V	-	3.8W (Ta), 170W (Tc)	10 mOhm @ 46A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DN1509K1-G	Microchip Technology	MOSFET N-CH 90V 0.2A SOT23-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 490mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 200mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-5 Package / Case: SC-74A, SOT-753	Package: SC-74A, SOT-753	Stock7,152	MOSFET (Metal Oxide)	90V	200mA (Tj)	0V	-	-	150pF @ 25V	±20V	Depletion Mode	490mW (Ta)	6 Ohm @ 200mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-5	SC-74A, SOT-753
IRFB4410PBF	Infineon Technologies	MOSFET N-CH 100V 96A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock8,712	MOSFET (Metal Oxide)	100V	88A (Tc)	10V	4V @ 150µA	180nC @ 10V	5150pF @ 50V	±20V	-	200W (Tc)	10 mOhm @ 58A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPD90P04P4L04ATMA1	Infineon Technologies	MOSFET P-CH 40V 90A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11570pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock49,170	MOSFET (Metal Oxide)	40V	90A (Tc)	4.5V, 10V	2.2V @ 250µA	176nC @ 10V	11570pF @ 25V	±16V	-	125W (Tc)	4.3 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPak (2 Leads + Tab), SC-63
2N7000_D74Z	Fairchild/ON Semiconductor	MOSFET N-CH 60V 200MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock35,112	MOSFET (Metal Oxide)	60V	200mA (Ta)	4.5V, 10V	3V @ 1mA	-	50pF @ 25V	±20V	-	400mW (Ta)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
SQJA37EP-T1_GE3	Vishay Siliconix	MOSFET P-CH 30V 30A PPAK SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock16,401	MOSFET (Metal Oxide)	30 V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	100 nC @ 10 V	4900 pF @ 25 V	±20V	-	45W (Tc)	9.2mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
XP9561GI	YAGEO XSEMI	MOSFET P-CH 40V 36A TO220CFM FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33.7W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220CFM Package / Case: TO-220-3 Full Pack	Package: -	Stock2,886	MOSFET (Metal Oxide)	40 V	36A (Tc)	4.5V, 10V	3V @ 250µA	40 nC @ 4.5 V	2780 pF @ 25 V	±20V	-	33.7W (Tc)	16mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220CFM	TO-220-3 Full Pack
RJK1535DPE-LE	Renesas Electronics Corporation	40A, 150V, 0.052OHM, N-CHANNEL M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 40A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: LDPAK Package / Case: SC-83	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	40A	10V	4.5V @ 1mA	35 nC @ 10 V	1420 pF @ 25 V	±30V	-	100W	52mOhm @ 20A, 10V	150°C	Surface Mount	LDPAK	SC-83
DMT10H025LSS-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V SO-8 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 12.9W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	7.1A (Ta)	4.5V, 10V	3V @ 250µA	22.9 nC @ 10 V	1639 pF @ 50 V	±20V	-	1.3W (Ta), 12.9W (Tc)	25mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AOM020V120X2Q	Alpha & Omega Semiconductor Inc.	1200V SILICON CARBIDE MOSFET FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 2.8V @ 27mA Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 5180 pF @ 800 V Vgs (Max): +15V, -5V FET Feature: - Power Dissipation (Max): 348W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 27A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	89A (Tc)	15V	2.8V @ 27mA	166 nC @ 15 V	5180 pF @ 800 V	+15V, -5V	-	348W (Tc)	28mOhm @ 27A, 15V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
AO3403L	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 2.6A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: 3-SMD, SOT-23-3 Variant	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	2.6A (Ta)	2.5V, 10V	1.4V @ 250µA	5.3 nC @ 4.5 V	500 pF @ 15 V	±12V	-	1.4W (Ta)	130mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	3-SMD, SOT-23-3 Variant
TK40S06N1L-LXHQ	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 40A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88.2W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock2,928	MOSFET (Metal Oxide)	60 V	40A (Ta)	4.5V, 10V	2.5V @ 200µA	26 nC @ 10 V	1650 pF @ 10 V	±20V	-	88.2W (Tc)	18mOhm @ 20A, 10V	175°C	Surface Mount	DPAK+	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTM67N10	IXYS	MOSFET N-CH 100V 67A TO204AE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AE Package / Case: TO-204AE	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	67A (Tc)	10V	4V @ 4mA	260 nC @ 10 V	4500 pF @ 25 V	±20V	-	300W (Tc)	25mOhm @ 33.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-204AE	TO-204AE
TSM180N03CS	Taiwan Semiconductor Corporation	30V, 9A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	9A (Tc)	4.5V, 10V	2V @ 250µA	4.1 nC @ 4.5 V	345 pF @ 25 V	±20V	-	2.5W (Tc)	18mOhm @ 8A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
IXFH98N60X3	IXYS	MOSFET ULTRA JCT 600V 98A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 49A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	98A (Tc)	10V	5V @ 4mA	90 nC @ 10 V	6250 pF @ 25 V	±20V	-	960W (Tc)	30mOhm @ 49A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
C3M0160120J	Wolfspeed, Inc.	SICFET N-CH 1200V 17A TO263-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.6V @ 2.33mA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V Vgs (Max): +15V, -4V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock10,023	SiCFET (Silicon Carbide)	1200 V	17A (Tc)	15V	3.6V @ 2.33mA	24 nC @ 15 V	632 pF @ 1000 V	+15V, -4V	-	90W (Tc)	208mOhm @ 8.5A, 15V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
XP3P010M	YAGEO XSEMI	MOSFET P-CH 30V 13.3A 8SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC	Package: -	Stock3,000	MOSFET (Metal Oxide)	30 V	13.3A (Ta)	4.5V, 10V	3V @ 250µA	54.4 nC @ 4.5 V	6080 pF @ 15 V	±20V	-	2.5W (Ta)	10mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC