Page 43 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPS05N03LA G
Infineon Technologies

MOSFET N-CH 25V 50A IPAK

Package: TO-251-3 Stub Leads, IPak

Stock3,232
IRF6638TR1PBF
Infineon Technologies

MOSFET N-CH 30V 25A DIRECTFET

Package: DirectFET? Isometric MX

Stock20,316
IRFU9024N
Infineon Technologies

MOSFET P-CH 55V 11A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock296,976
IXTQ280N055T
IXYS

MOSFET N-CH 55V 280A TO-3P

Package: TO-3P-3, SC-65-3

Stock3,248
FDR4420A
Fairchild/ON Semiconductor

MOSFET N-CH 30V 11A SSOT-8

Package: 8-SMD, Gull Wing

Stock73,800
NTHD4N02FT1
ON Semiconductor

MOSFET N-CH 20V 2.9A CHIPFET

Package: 8-SMD, Flat Lead

Stock121,476
IRFBC20STRR
Vishay Siliconix

MOSFET N-CH 600V 2.2A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,560
STL100N1VH5
STMicroelectronics

MOSFET N-CH 12V 100A POWERFLAT56

Package: 8-PowerVDFN

Stock4,720
STW30NM60D
STMicroelectronics

MOSFET N-CH 600V 30A TO-247

Package: TO-247-3

Stock4,464
AUIRFB8405
Infineon Technologies

MOSFET N-CH 40V 120A TO220AB

Package: TO-220-3

Stock40,800
IXFH140N10P
IXYS

MOSFET N-CH 100V 140A TO-247

Package: TO-247-3

Stock7,728
VN2460N3-G-P014
Microchip Technology

MOSFET N-CH 600V 0.16A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock4,928
TSM2305CX RFG
TSC America Inc.

MOSFET, SINGLE, P-CHANNEL, -20V,

Package: TO-236-3, SC-59, SOT-23-3

Stock108,000
IXFH18N90P
IXYS

MOSFET N-CH TO-247

Package: TO-247-3

Stock7,872
STF4N90K5
STMicroelectronics

N-CHANNEL 900 V, 0.25 OHM TYP.,

Package: TO-220-3

Stock6,828
FDPF5N50NZ
Fairchild/ON Semiconductor

MOSFET N-CH 500V 4.5A TO220F

Package: TO-220-3 Full Pack

Stock37,752
STP13NM60ND
STMicroelectronics

MOSFET N-CH 600V 11A TO-220

Package: TO-220-3

Stock8,760
DMP2130LDM-7
Diodes Incorporated

MOSFET P-CH 20V 3.4A SOT-26

Package: SOT-23-6

Stock490,452
IRF4905LPBF
Infineon Technologies

MOSFET P-CH 55V 42A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,600
FDD8453LZ
Fairchild/ON Semiconductor

MOSFET N-CH 40V 16.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock90,012

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPS05N03LA G	Infineon Technologies	MOSFET N-CH 25V 50A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock3,232	MOSFET (Metal Oxide)	25V	50A (Tc)	4.5V, 10V	2V @ 50µA	25nC @ 5V	3110pF @ 15V	±20V	-	94W (Tc)	5.3 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Stub Leads, IPak
IRF6638TR1PBF	Infineon Technologies	MOSFET N-CH 30V 25A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 25A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock20,316	MOSFET (Metal Oxide)	30V	25A (Ta), 140A (Tc)	4.5V, 10V	2.35V @ 100µA	45nC @ 4.5V	3770pF @ 15V	±20V	-	2.8W (Ta), 89W (Tc)	2.9 mOhm @ 25A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IRFU9024N	Infineon Technologies	MOSFET P-CH 55V 11A I-PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 175 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock296,976	MOSFET (Metal Oxide)	55V	11A (Tc)	10V	4V @ 250µA	19nC @ 10V	350pF @ 25V	±20V	-	38W (Tc)	175 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IXTQ280N055T	IXYS	MOSFET N-CH 55V 280A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock3,248	MOSFET (Metal Oxide)	55V	280A (Tc)	10V	4V @ 250µA	200nC @ 10V	9700pF @ 25V	±20V	-	550W (Tc)	3.2 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
FDR4420A	Fairchild/ON Semiconductor	MOSFET N-CH 30V 11A SSOT-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-8 Package / Case: 8-SMD, Gull Wing	Package: 8-SMD, Gull Wing	Stock73,800	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	3V @ 250µA	33nC @ 5V	2560pF @ 15V	±20V	-	1.8W (Ta)	9 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-8	8-SMD, Gull Wing
NTHD4N02FT1	ON Semiconductor	MOSFET N-CH 20V 2.9A CHIPFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 910mW (Tj) Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock121,476	MOSFET (Metal Oxide)	20V	2.9A (Tj)	2.5V, 4.5V	1.2V @ 250µA	4nC @ 4.5V	300pF @ 10V	±12V	Schottky Diode (Isolated)	910mW (Tj)	80 mOhm @ 2.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET?	8-SMD, Flat Lead
IRFBC20STRR	Vishay Siliconix	MOSFET N-CH 600V 2.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,560	MOSFET (Metal Oxide)	600V	2.2A (Tc)	10V	4V @ 250µA	18nC @ 10V	350pF @ 25V	±20V	-	3.1W (Ta), 50W (Tc)	4.4 Ohm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STL100N1VH5	STMicroelectronics	MOSFET N-CH 12V 100A POWERFLAT56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 500mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2085pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 12.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock4,720	MOSFET (Metal Oxide)	12V	100A (Tc)	2.5V, 4.5V	500mV @ 250µA (Min)	26.5nC @ 4.5V	2085pF @ 10V	±8V	-	60W (Tc)	3 mOhm @ 12.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
STW30NM60D	STMicroelectronics	MOSFET N-CH 600V 30A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 145 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,464	MOSFET (Metal Oxide)	600V	30A (Tc)	10V	5V @ 250µA	115nC @ 10V	2520pF @ 25V	±30V	-	312W (Tc)	145 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
AUIRFB8405	Infineon Technologies	MOSFET N-CH 40V 120A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5193pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 163W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock40,800	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	3.9V @ 100µA	161nC @ 10V	5193pF @ 25V	±20V	-	163W (Tc)	2.5 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFH140N10P	IXYS	MOSFET N-CH 100V 140A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock7,728	MOSFET (Metal Oxide)	100V	140A (Tc)	10V	5V @ 4mA	155nC @ 10V	4700pF @ 25V	±20V	-	600W (Tc)	11 mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
VN2460N3-G-P014	Microchip Technology	MOSFET N-CH 600V 0.16A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 160mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 20 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock4,928	MOSFET (Metal Oxide)	600V	160mA (Tj)	4.5V, 10V	4V @ 2mA	-	150pF @ 25V	±20V	-	1W (Ta)	20 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TSM2305CX RFG	TSC America Inc.	MOSFET, SINGLE, P-CHANNEL, -20V, FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock108,000	MOSFET (Metal Oxide)	20V	3.2A (Ta)	1.8V, 4.5V	1V @ 250µA	10nC @ 10V	990pF @ 10V	±8V	-	1.25W (Ta)	55 mOhm @ 3.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IXFH18N90P	IXYS	MOSFET N-CH TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock7,872	MOSFET (Metal Oxide)	900V	18A (Tc)	10V	6.5V @ 1mA	97nC @ 10V	5230pF @ 25V	±30V	-	540W (Tc)	600 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
STF4N90K5	STMicroelectronics	N-CHANNEL 900 V, 0.25 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 4A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 173pF @ 100V Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): 20W (Ta) Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3	Package: TO-220-3	Stock6,828	MOSFET (Metal Oxide)	900V	4A	10V	5V @ 100µA	5.3nC @ 10V	173pF @ 100V	±30V	Current Sensing	20W (Ta)	2.1 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3
FDPF5N50NZ	Fairchild/ON Semiconductor	MOSFET N-CH 500V 4.5A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock37,752	MOSFET (Metal Oxide)	500V	4.5A (Tc)	10V	5V @ 250µA	12nC @ 10V	440pF @ 25V	±25V	-	30W (Tc)	1.5 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
STP13NM60ND	STMicroelectronics	MOSFET N-CH 600V 11A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 109W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock8,760	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	24.5nC @ 10V	845pF @ 50V	±25V	-	109W (Tc)	380 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
DMP2130LDM-7	Diodes Incorporated	MOSFET P-CH 20V 3.4A SOT-26 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 16V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	Package: SOT-23-6	Stock490,452	MOSFET (Metal Oxide)	20V	3.4A (Ta)	2.5V, 4.5V	1.25V @ 250µA	7.3nC @ 4.5V	443pF @ 16V	±12V	-	1.25W (Ta)	80 mOhm @ 4.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-26	SOT-23-6
IRF4905LPBF	Infineon Technologies	MOSFET P-CH 55V 42A TO-262 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 42A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,600	MOSFET (Metal Oxide)	55V	42A (Tc)	10V	4V @ 250µA	180nC @ 10V	3500pF @ 25V	±20V	-	170W (Tc)	20 mOhm @ 42A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
FDD8453LZ	Fairchild/ON Semiconductor	MOSFET N-CH 40V 16.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3515pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock90,012	MOSFET (Metal Oxide)	40V	16.4A (Ta), 50A (Tc)	4.5V, 10V	3V @ 250µA	64nC @ 10V	3515pF @ 20V	±20V	-	3.1W (Ta), 65W (Tc)	6.7 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
STL8P2UH7	STMicroelectronics	MOSFET P-CH 20V 8A POWERFLAT22 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 16V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.4W (Tc) Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (2x2) Package / Case: 6-PowerWDFN	Package: 6-PowerWDFN	Stock27,744	MOSFET (Metal Oxide)	20V	8A (Tc)	1.5V, 4.5V	1V @ 250µA	22nC @ 4.5V	2390pF @ 16V	±8V	-	2.4W (Tc)	22.5 mOhm @ 4A, 4.5V	150°C (TJ)	Surface Mount	PowerFlat? (2x2)	6-PowerWDFN
IXFA36N55X2	IXYS	IXFA36N55X2 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTLUS030N03CTAG	onsemi	MOSFET N-CH 30V 4.5A 6UDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 640mW (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (1.6x1.6) Package / Case: 6-PowerUFDFN	Package: -	Stock7,584	MOSFET (Metal Oxide)	30 V	4.5A (Ta)	4.5V, 10V	2.2V @ 250µA	8 nC @ 10 V	400 pF @ 15 V	±20V	-	640mW (Ta)	18mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN (1.6x1.6)	6-PowerUFDFN
SIRA66DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 50A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	50A (Tc)	4.5V, 10V	2.2V @ 1mA	66 nC @ 10 V	-	+20V, -16V	-	62.5W (Tc)	2.3mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
PJD5NA80_L2_00001	Panjit International Inc.	800V N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	5A (Ta)	10V	4V @ 250µA	17 nC @ 10 V	660 pF @ 25 V	±30V	-	140W (Tc)	2.7Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHU2N80AE-GE3	Vishay Siliconix	MOSFET N-CH 800V 2.9A TO251AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	2.9A (Tc)	10V	4V @ 250µA	10.5 nC @ 10 V	180 pF @ 100 V	±30V	-	62.5W (Tc)	2.9Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
NVMFS5C638NLT1G	onsemi	MOSFET N-CH 60V 26A/133A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock3,945	MOSFET (Metal Oxide)	60 V	26A (Ta), 133A (Tc)	4.5V, 10V	2V @ 250µA	40.7 nC @ 10 V	2880 pF @ 25 V	±20V	-	4W (Ta), 100W (Tc)	3mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
IPL60R060CFD7AUMA1	Infineon Technologies	MOSFET N CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 900µA Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3193 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 219W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 18A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4-1 Package / Case: 4-PowerTSFN	Package: -	Stock8,649	MOSFET (Metal Oxide)	600 V	40A (Tc)	10V	4.5V @ 900µA	79 nC @ 10 V	3193 pF @ 400 V	±20V	-	219W (Tc)	60mOhm @ 18A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4-1	4-PowerTSFN